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Carrasco JA, Congost-Escoin P, Assebban M, Abellán G. Antimonene: a tuneable post-graphene material for advanced applications in optoelectronics, catalysis, energy and biomedicine. Chem Soc Rev 2023; 52:1288-1330. [PMID: 36744431 PMCID: PMC9987414 DOI: 10.1039/d2cs00570k] [Citation(s) in RCA: 11] [Impact Index Per Article: 11.0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/07/2022] [Indexed: 02/07/2023]
Abstract
The post-graphene era is undoubtedly marked by two-dimensional (2D) materials such as quasi-van der Waals antimonene. This emerging material has a fascinating structure, exhibits a pronounced chemical reactivity (in contrast to graphene), possesses outstanding electronic properties and has been postulated for a plethora of applications. However, chemistry and physics of antimonene remain in their infancy, but fortunately recent discoveries have shed light on its unmatched allotropy and rich chemical reactivity offering a myriad of unprecedented possibilities in terms of fundamental studies and applications. Indeed, antimonene can be considered as one of the most appealing post-graphene 2D materials reported to date, since its structure, properties and applications can be chemically engineered from the ground up (both using top-down and bottom-up approaches), offering an unprecedented level of control in the realm of 2D materials. In this review, we provide an in-depth analysis of the recent advances in the synthesis, characterization and applications of antimonene. First, we start with a general introduction to antimonene, and then we focus on its general chemistry, physical properties, characterization and synthetic strategies. We then perform a comprehensive study on the allotropy, the phase transition mechanisms, the oxidation behaviour and chemical functionalization. From a technological point of view, we further discuss the applications recently reported for antimonene in the fields of optoelectronics, catalysis, energy storage, cancer therapy and sensing. Finally, important aspects such as new scalable methodologies or the promising perspectives in biomedicine are discussed, pinpointing antimonene as a cutting-edge material of broad interest for researchers working in chemistry, physics, materials science and biomedicine.
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Affiliation(s)
- Jose A Carrasco
- Instituto de Ciencia Molecular (ICMol), Universidad de Valencia, Catedrático José Beltrán Martínez, 2, 46980 Paterna, Spain.
| | - Pau Congost-Escoin
- Instituto de Ciencia Molecular (ICMol), Universidad de Valencia, Catedrático José Beltrán Martínez, 2, 46980 Paterna, Spain.
| | - Mhamed Assebban
- Instituto de Ciencia Molecular (ICMol), Universidad de Valencia, Catedrático José Beltrán Martínez, 2, 46980 Paterna, Spain.
| | - Gonzalo Abellán
- Instituto de Ciencia Molecular (ICMol), Universidad de Valencia, Catedrático José Beltrán Martínez, 2, 46980 Paterna, Spain.
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Li Y, Bowers JW, Hlevyack JA, Lin MK, Chiang TC. Emergent and Tunable Topological Surface States in Complementary Sb/Bi 2Te 3 and Bi 2Te 3/Sb Thin-Film Heterostructures. ACS NANO 2022; 16:9953-9959. [PMID: 35699943 PMCID: PMC9245572 DOI: 10.1021/acsnano.2c04639] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/11/2022] [Accepted: 06/09/2022] [Indexed: 06/15/2023]
Abstract
Epitaxial thin-film heterostructures offer a versatile platform for realizing topological surface states (TSSs) that may be emergent and/or tunable by tailoring the atomic layering in the heterostructures. Here, as an experimental demonstration, Sb and Bi2Te3 thin films with closely matched in-plane lattice constants are chosen to form two complementary heterostructures: Sb overlayers on Bi2Te3 (Sb/Bi2Te3) and Bi2Te3 overlayers on Sb (Bi2Te3/Sb), with the overlayer thickness as a tuning parameter. In the bulk form, Sb (a semimetal) and Bi2Te3 (an insulator) both host TSSs with the same topological order but substantially different decay lengths and dispersions, whereas ultrathin Sb and Bi2Te3 films by themselves are fully gapped trivial insulators. Angle-resolved photoemission band mappings, aided by theoretical calculations, confirm the formation of emergent TSSs in both heterostructures. The energy position of the topological Dirac point varies as a function of overlayer thickness, but the variation is non-monotonic, indicating nontrivial effects in the formation of topological heterostructure systems. The results illustrate the rich physics of engineered composite topological systems that may be exploited for nanoscale spintronics applications.
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Affiliation(s)
- Yao Li
- Department
of Physics, University of Illinois at Urbana−Champaign, Urbana, Illinois 61801, United States
- Frederick
Seitz Materials Research Laboratory, University
of Illinois at Urbana−Champaign, Urbana, Illinois 61801, United States
| | - John W. Bowers
- Department
of Physics, University of Illinois at Urbana−Champaign, Urbana, Illinois 61801, United States
- Frederick
Seitz Materials Research Laboratory, University
of Illinois at Urbana−Champaign, Urbana, Illinois 61801, United States
| | - Joseph A. Hlevyack
- Department
of Physics, University of Illinois at Urbana−Champaign, Urbana, Illinois 61801, United States
- Frederick
Seitz Materials Research Laboratory, University
of Illinois at Urbana−Champaign, Urbana, Illinois 61801, United States
| | - Meng-Kai Lin
- Department
of Physics, University of Illinois at Urbana−Champaign, Urbana, Illinois 61801, United States
- Frederick
Seitz Materials Research Laboratory, University
of Illinois at Urbana−Champaign, Urbana, Illinois 61801, United States
- Department
of Physics, National Central University, Taoyuan 32001, Taiwan
| | - Tai-Chang Chiang
- Department
of Physics, University of Illinois at Urbana−Champaign, Urbana, Illinois 61801, United States
- Frederick
Seitz Materials Research Laboratory, University
of Illinois at Urbana−Champaign, Urbana, Illinois 61801, United States
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Kim SH, Jin KH, Kho BW, Park BG, Liu F, Kim JS, Yeom HW. Atomically Abrupt Topological p-n Junction. ACS NANO 2017; 11:9671-9677. [PMID: 28825806 DOI: 10.1021/acsnano.7b03880] [Citation(s) in RCA: 15] [Impact Index Per Article: 2.1] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
Topological insulators (TI's) are a new class of quantum matter with extraordinary surface electronic states, which bear great potential for spintronics and error-tolerant quantum computing. In order to put a TI into any practical use, these materials need to be fabricated into devices whose basic units are often p-n junctions. Interesting electronic properties of a 'topological' p-n junction were proposed theoretically such as the junction electronic state and the spin rectification. However, the fabrication of a lateral topological p-n junction has been challenging because of materials, process, and fundamental reasons. Here, we demonstrate an innovative approach to realize a p-n junction of topological surface states (TSS's) of a three-dimensional (3D) topological insulator (TI) with an atomically abrupt interface. When a ultrathin Sb film is grown on a 3D TI of Bi2Se3 with a typical n-type TSS, the surface develops a strongly p-type TSS through the substantial hybridization between the 2D Sb film and the Bi2Se3 surface. Thus, the Bi2Se3 surface covered partially with Sb films bifurcates into areas of n- and p-type TSS's as separated by atomic step edges with a lateral electronic junction of as short as 2 nm. This approach opens a different avenue toward various electronic and spintronic devices based on well-defined topological p-n junctions with the scalability down to atomic dimensions.
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Affiliation(s)
- Sung Hwan Kim
- Center for Artificial Low Dimensional Electronic Systems, Institute for Basic Science (IBS) , Pohang 37673, Republic of Korea
| | - Kyung-Hwan Jin
- Department of Materials Science and Engineering, University of Utah , Salt Lake City, Utah 84112, United States
| | | | | | - Feng Liu
- Department of Materials Science and Engineering, University of Utah , Salt Lake City, Utah 84112, United States
- Collaborative Innovation Center of Quantum Matter , Beijing 100084, China
| | | | - Han Woong Yeom
- Center for Artificial Low Dimensional Electronic Systems, Institute for Basic Science (IBS) , Pohang 37673, Republic of Korea
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Klimovskikh II, Sostina D, Petukhov A, Rybkin AG, Eremeev SV, Chulkov EV, Tereshchenko OE, Kokh KA, Shikin AM. Spin-resolved band structure of heterojunction Bi-bilayer/3D topological insulator in the quantum dimension regime in annealed Bi 2Te 2.4Se 0.6. Sci Rep 2017; 7:45797. [PMID: 28378826 PMCID: PMC5381095 DOI: 10.1038/srep45797] [Citation(s) in RCA: 9] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/10/2017] [Accepted: 03/02/2017] [Indexed: 11/08/2022] Open
Abstract
Two- and three-dimensional topological insulators are the key materials for the future nanoelectronic and spintronic devices and quantum computers. By means of angle- and spin-resolved photoemission spectroscopy we study the electronic and spin structure of the Bi-bilayer/3D topological insulator in quantum tunneling regime formed under the short annealing of Bi2Te2.4Se0.6. Owing to the temperature-induced restructuring of the topological insulator's surface quintuple layers, the hole-like spin-split Bi-bilayer bands and the parabolic electronic-like state are observed instead of the Dirac cone. Scanning Tunneling Microscopy and X-ray Photoemission Spectroscopy measurements reveal the appearance of the Bi2 terraces at the surface under the annealing. The experimental results are supported by density functional theory calculations, predicting the spin-polarized Bi-bilayer bands interacting with the quintuple-layers-derived states. Such an easily formed heterostructure promises exciting applications in spin transport devices and low-energy electronics.
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Affiliation(s)
| | - D. Sostina
- Saint Petersburg State University, 198504, Saint Petersburg, Russia
| | - A. Petukhov
- Saint Petersburg State University, 198504, Saint Petersburg, Russia
| | - A. G. Rybkin
- Saint Petersburg State University, 198504, Saint Petersburg, Russia
| | - S. V. Eremeev
- Saint Petersburg State University, 198504, Saint Petersburg, Russia
- Institute of Strength Physics and Materials Science, 634055, Tomsk, Russia
- Tomsk State University, 634050, Tomsk, Russia
| | - E. V. Chulkov
- Saint Petersburg State University, 198504, Saint Petersburg, Russia
- Tomsk State University, 634050, Tomsk, Russia
- Donostia International Physics Center (DIPC), 20018 San Sebastián/Donostia, Basque Country, Spain
- Departamento de Física de Materiales UPV/EHU, Centro de Física de Materiales CFM - MPC and Centro Mixto CSIC-UPV/EHU, 20080 San Sebastián/Donostia, Basque Country, Spain
| | - O. E. Tereshchenko
- Saint Petersburg State University, 198504, Saint Petersburg, Russia
- A.V. Rzhanov Institute of Semiconductor Physics, 630090, Novosibirsk, Russia
- Novosibirsk State University, 630090, Novosibirsk, Russia
| | - K. A. Kokh
- Saint Petersburg State University, 198504, Saint Petersburg, Russia
- Novosibirsk State University, 630090, Novosibirsk, Russia
- V.S. Sobolev Institute of Geology and Mineralogy, 630090, Novosibirsk, Russia
| | - A. M. Shikin
- Saint Petersburg State University, 198504, Saint Petersburg, Russia
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Mo SK. Angle-resolved photoemission spectroscopy for the study of two-dimensional materials. NANO CONVERGENCE 2017; 4:6. [PMCID: PMC6141890 DOI: 10.1186/s40580-017-0100-7] [Citation(s) in RCA: 6] [Impact Index Per Article: 0.9] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/23/2017] [Accepted: 03/15/2017] [Indexed: 05/26/2023]
Abstract
Quantum systems in confined geometries allow novel physical properties that cannot easily be attained in their bulk form. These properties are governed by the changes in the band structure and the lattice symmetry, and most pronounced in their single layer limit. Angle-resolved photoemission spectroscopy (ARPES) is a direct tool to investigate the underlying changes of band structure to provide essential information for understanding and controlling such properties. In this review, recent progresses in ARPES as a tool to study two-dimensional atomic crystals have been presented. ARPES results from few-layer and bulk crystals of material class often referred as “beyond graphene” are discussed along with the relevant developments in the instrumentation.
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Affiliation(s)
- Sung-Kwan Mo
- Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, CA 94720 USA
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