Tailoring the photoluminescence of ZnO nanowires using Au nanoparticles

Leveraging plasmonic hot electrons to quench defect emission in metal-semiconductor nanostructured hybrids

Modeling light-matter interactions in hybrid plasmonic materials is vital to their widening relevance from optoelectronics to photocatalysis. Here, we explore photoluminescence (PL) from ZnO nanorods (ZNRs) embedded with gold nanoparticles (Au NPs). A progressive increase in Au NP concentration introduces significant structural disorder and defects in ZNRs, which paradoxically quenches defect related visible PL while intensifying the near band edge (NBE) emission. Under UV excitation, the simulated semi-classical model realizes PL from ZnO with sub-bandgap defect states, eliciting visible emissions that are absorbed by Au NPs to generate a non-equilibrium hot carrier distribution. The photo-stimulated hot carriers, transferred to ZnO, substantially modify its steady-state luminescence, reducing NBE emission lifetime and altering the abundance of ionized defect states, finally reducing visible emission. The simulations show that the change in the interfacial band bending at the Au-ZnO interface under optical illumination facilitates charge transfer between the components. This work provides a general foundation to observe and model the hot carrier dynamics and strong light-matter interactions in hybrid plasmonic systems.

In situ assembly of one-dimensional Pt@ZnO nanofibers driven by a ZIF-8 framework for achieving a high-performance acetone sensor

To obtain a high-performance gas sensor, it is essential to ingeniously design sensing materials containing the features of high catalytic performance, abundant oxygen vacancies, and splendid grain dispersibility through a simple method. Inspired by the fact that ZIF-8 contains semiconductor metal atoms, well-arranged ZnO nanoparticle (NP)-in situ assembled one-dimensional nanofibers (NFs) are obtained by one-step electrospinning. By incorporating Pt NPs into the cavity of ZIF-8 NPs, well-dispersed Pt@ZnO NPs driven by Pt@ZIF-8 composites are obtained after annealing. The well-arranged Pt@ZnO NP-assembled NFs not only exhibit abundant oxygen vacancies but also avoid the self-aggregation of ZnO and Pt NPs. Meanwhile, the small Pt NPs could improve the catalytic effect in return. Therefore, the gas sensor fabricated based on the above materials exhibits an acetone sensitivity of 6.1 at 370 °C, compared with pristine ZnO NFs (1.6, 5 ppm). Moreover, the well-arranged Pt@ZnO NP-assembled NFs show exceptional sensitivity to acetone with a 70.2 ppb-level detection limit in theory. The synergistic advantages of the designed sensing material open up new possibilities for non-invasive disease diagnosis.

Insights into the impact of photophysical processes and defect state evolution on the emission properties of surface-modified ZnO nanoplates for application in photocatalysis and hybrid LEDs

The effects of surface modification on the defect state densities, optical properties, and photocatalytic and quantum efficiencies of zinc oxide (ZnO) nanoplates were studied in this work. The aim of this study is to identify the photophysical processes that dictate the quenching of emission from defect states upon surface modification and the role of different defects such as zinc interstitials (Zn_i) or oxygen vacancies (V_O) beside the photophysical processes in determining the photocatalytic efficiency of plate-like ZnO nanostructures. For controlling the intrinsic defect state densities of ZnO nanoplates, which is difficult to achieve, their surface was modified using different polymers such as PMMA and PVA. X-ray photoelectron spectroscopy (XPS) and photoluminescence (PL) emission spectroscopy were employed to identify and quantify the defect states. The analysis of relative defect state densities of Zn_i or V_O showed that Zn_i significantly impacts the photocatalytic activity (PCA) besides V_O, but it has a lower influence than V_O because of the difference in the accessibility and intrinsic nature of these two defects. Synchronous quenching of emission from different defect states with different formation energies and its correlation with the photocatalytic activity led us to conclude that photophysical processes such as concentration-dependent Förster resonance energy transfer (FRET), charge transfer (CT) and Zn_i defects play a significant role behind PCA, which has been previously reported to be influenced by V_O only. FRET and CT also play a critical role behind emission quenching upon surface modification. Upon the surface modification of nanoplates, a drop in the quantum efficiency from 12.14% to 4.44% was observed with the fine-tuning of emission colour from bluish-white to blue. Besides the defect states, FRET and CT phenomena are dominant in reducing the quantum efficiency of hybrid light-emitting diodes (HyLEDs) and photocatalytic efficiency. Therefore, the work outlines the reason behind the suppression of luminescence and photocatalytic efficiency of ZnO nanoparticles after surface modification and how to optimise them for their applications as an emissive layer in HyLEDs and efficient photocatalysts.

Localized Energy Band Bending in ZnO Nanorods Decorated with Au Nanoparticles

Surface decoration by means of metal nanostructures is an effective way to locally modify the electronic properties of materials. The decoration of ZnO nanorods by means of Au nanoparticles was experimentally investigated and modelled in terms of energy band bending. ZnO nanorods were synthesized by chemical bath deposition. Decoration with Au nanoparticles was achieved by immersion in a colloidal solution obtained through the modified Turkevich method. The surface of ZnO nanorods was quantitatively investigated by Scanning Electron Microscopy, Transmission Electron Microscopy and Rutherford Backscattering Spectrometry. The Photoluminescence and Cathodoluminescence of bare and decorated ZnO nanorods were investigated, as well as the band bending through Mott–Schottky electrochemical analyses. Decoration with Au nanoparticles induced a 10 times reduction in free electrons below the surface of ZnO, together with a decrease in UV luminescence and an increase in visible-UV intensity ratio. The effect of decoration was modelled with a nano-Schottky junction at ZnO surface below the Au nanoparticle with a Multiphysics approach. An extensive electric field with a specific halo effect formed beneath the metal–semiconductor interface. ZnO nanorod decoration with Au nanoparticles was shown to be a versatile method to tailor the electronic properties at the semiconductor surface.

A Simple Ball Milling and Thermal Oxidation Method for Synthesis of ZnO Nanowires Decorated with Cubic ZnO2 Nanoparticles

In this work, we propose the synthesis of ZnO nanostructures through the thermal oxidation of ball-milled powders with the introduction of Mg and Sn doping species at the preliminary step of milling. We investigate the advantages and challenges of this two steps process for the production and fabrication of highly crystalline ZnO nanowires. This simple method allows us to fabricate ZnO nanowires with a higher quality core crystal at a much lower temperature and for a shorter processing time than the state-of-the-art, and decorated with by ZnO₂ nanoparticles as determined via TEM analysis. The main findings will show that the crystalline core of the nanowires is of hexagonal ZnO while the nanoparticles on the surface are ZnO₂ cubic type. Generally, the method proves to be suitable for applications that require a high surface-to-volume ratio, for example, catalysis phenomena, in which the presence of zinc oxides species can play an important role.

Molecular-Imprinting-Based Surface-Enhanced Raman Scattering Sensors

Molecularly imprinted polymers (MIPs) receive extensive interest, owing to their structure predictability, recognition specificity, and application universality as well as robustness, simplicity, and inexpensiveness. Surface-enhanced Raman scattering (SERS) is regarded as an ideal optical detection candidate for its unique features of fingerprint recognition, nondestructive property, high sensitivity, and rapidity. Accordingly, MIP based SERS (MIP-SERS) sensors have attracted significant research interest for versatile applications especially in the field of chemo- and bioanalysis, showing excellent identification and detection performances. Herein, we comprehensively review the recent advances in MIP-SERS sensors construction and applications, including sensing principles and signal enhancement mechanisms, focusing on novel construction strategies and representative applications. First, the basic structure of the MIP-SERS sensors is briefly outlined. Second, novel imprinting strategies are highlighted, mainly including multifunctional monomer imprinting, dummy template imprinting, living/controlled radical polymerization, and stimuli-responsive imprinting. Third, typical application of MIP-SERS sensors in chemo/bioanalysis is summarized from both small and macromolecular aspects. Lastly, the challenges and perspectives of the MIP-SERS sensors are proposed, orienting sensitivity improvement and application expanding.

Interaction of ZnO nanorods with plasmonic metal nanoparticles and semiconductor quantum dots

We model the enhancement of near band edge emission from ZnO nanorods using plasmonic metal nanoparticles and compare it with emission enhancement from ZnO with semiconducting quantum dots. Selected CdSe quantum dots with absorption energies close to those of Ag and Au nanoparticles are chosen to construct model systems with ZnO to comprehend the role of ZnO's intrinsic defects and plasmonic excitation in realizing the spectrally selective luminescence enhancement. Excitation wavelength dependent photoluminescence spectra along with theoretical models quantifying the related transitions and plasmonic absorption reveal that a complex mechanism of charge transfer between the ZnO nanorods and metal nanoparticles or quantum dots is essential along with an optimal energy band alignment for realizing emission enhancement. The theoretical model presented also provides a direct method of quantifying the relative transition rate constants associated with various electronic transitions in ZnO and their change upon the incorporation of plasmonic nanoparticles. The results indicate that, while the presence of deep level defect states may facilitate the essential charge transfer process between ZnO and the plasmonic nanoparticles, their presence alone does not guarantee UV emission enhancement and strong plasmonic coupling between the two systems. The results offer clues to designing novel multicomponent systems with coupled plasmonic and charge transfer effects for applications in charge localization, energy harvesting, and luminescence enhancement, especially in electrically triggered nanophotonic applications.

Synthesis of Au/SnO2 nanostructures allowing process variable control

Theoretical advances in science are inherently time-consuming to realise in engineering, since their practical application is hindered by the inability to follow the theoretical essence. Herein, we propose a new method to freely control the time, cost, and process variables in the fabrication of a hybrid featuring Au nanoparticles on a pre-formed SnO₂ nanostructure. The above advantages, which were divided into six categories, are proven to be superior to those achieved elsewhere, and the obtained results are found to be applicable to the synthesis and functionalisation of other nanostructures. Furthermore, the reduction of the time-gap between science and engineering is expected to promote the practical applications of numerous scientific theories.

Passivation Effect on ZnO Films by SF6 Plasma Treatment

The passivation effects of SF6 plasma on zinc oxide (ZnO) films prepared by magnetron sputtering were researched. After the SF6 plasma passivation of ZnO films, the grain size increases, there is low surface roughness, and a small amount of Zn-F bonds are formed, resulting in the narrowing of band gap. The photoluminescence (PL) intensity of SF6-passivated ZnO films has a 120% increase compared to the untreated samples, and the reduction in defects can increase the resistivity and stability of ZnO films. ZnO films are used in the preparation of ZnO/p-Si heterojunction diodes. The results of the measurement of current voltage (J–V) show that the reverse current is reduced after SF6 plasma passivation, indicating an improvement in the electrical properties of ZnO films.

Investigation of Dual-Ion Beam Sputter-Instigated Plasmon Generation in TCOs: A Case Study of GZO

The use of the high free-electron concentration in heavily doped semiconductor enables the realization of plasmons. We report a novel approach to generate plasmons in Ga:ZnO (GZO) thin films in the wide spectral range of ∼1.87-10.04 eV. In the grown GZO thin films, dual-ion beam sputtering (DIBS) instigated plasmon is observed because of the formation of different metallic nanoclusters are reported. Moreover, formation of the nanoclusters and generation of plasmons are verified by field emission scanning electron microscope, electron energy loss spectra obtained by ultraviolet photoelectron spectroscopy, and spectroscopic ellipsometry analysis. Moreover, the calculation of valence bulk, valence surface, and particle plasmon resonance energies are performed, and indexing of each plasmon peaks with corresponding plasmon energy peak of the different nanoclusters is carried out. Further, the use of DIBS-instigated plasmon-enhanced GZO can be a novel mean to improve the performance of photovoltaic, photodetector, and sensing devices.

Metallic Nanodroplet Induced Coulomb Catalysis for Off-Resonant Plasmonic Enhancement of Photoemission in Semiconductors

The enhancement of light from semiconductors due to surface plasmons coupled resonantly to its emission is limited because of dissipation in the metal and is also restricted by the dielectric characteristics and homogeneity of the metal-semiconductor interface. We report a new mechanism based on electrostatic interactions of carriers and their image charges in metals to generate more photons from optical sources at frequencies that are off-resonant to the localized plasmon frequency. Coulomb catalysis of carrier accumulation resulting from the inhomogeneity of metal nanodroplets on a semiconductor's surface can result in an enhancement of light that is nondissipative and does not require resonant coupling of plasmons to the emission wavelength. The enhancement occurs because of an increase in the ratio of radiative to nonradiative recombination in the vicinity of metal nanoparticles. It is equally effective with any type of metal and enhances radiation at any frequency, a property that is of principal importance for the realization of widely tunable semiconductor emitters. This fundamental mechanism provides a new perspective for improving the efficiency of light emitters and controlling carrier concentration on the nanoscale. The structural characteristics of the hybrid metal-semiconductor emitters are studied using electron microscopy and atomic force microscopy. We demonstrate the electrostatic mechanism by studying steady-state and transient photoluminescence from two-dimensional semiconductors, such as GaAs/AlGAs quantum wells, and bulk semiconductors, such as ZnO thin films, emitting in the near-IR and UV wavelength regimes, respectively.

Gate-Tunable Spin Exchange Interactions and Inversion of Magnetoresistance in Single Ferromagnetic ZnO Nanowires

Electrical control of ferromagnetism in semiconductor nanostructures offers the promise of nonvolatile functionality in future semiconductor spintronics. Here, we demonstrate a dramatic gate-induced change of ferromagnetism in ZnO nanowire (NW) field-effect transistors (FETs). Ferromagnetism in our ZnO NWs arose from oxygen vacancies, which constitute deep levels hosting unpaired electron spins. The magnetic transition temperature of the studied ZnO NWs was estimated to be well above room temperature. The in situ UV confocal photoluminescence (PL) study confirmed oxygen vacancy mediated ferromagnetism in the studied ZnO NW FET devices. Both the estimated carrier concentration and temperature-dependent conductivity reveal the studied ZnO NWs are at the crossover of the metal-insulator transition. In particular, gate-induced modulation of the carrier concentration in the ZnO NW FET significantly alters carrier-mediated exchange interactions, which causes even inversion of magnetoresistance (MR) from negative to positive values. Upon sweeping the gate bias from -40 to +50 V, the MRs estimated at 2 K and 2 T were changed from -11.3% to +4.1%. Detailed analysis on the gate-dependent MR behavior clearly showed enhanced spin splitting energy with increasing carrier concentration. Gate-voltage-dependent PL spectra of an individual NW device confirmed the localization of oxygen vacancy-induced spins, indicating that gate-tunable indirect exchange coupling between localized magnetic moments played an important role in the remarkable change of the MR.

Strongly enhanced ultraviolet emission of an Au@SiO2/ZnO plasmonic hybrid nanostructure

We present the surface plasmon polariton (SPP)-enhanced ultraviolet (UV) emission of an Au@SiO2/ZnO hybrid nanostructure. We achieved approximately 20- and 8-fold enhancements of the UV-emitting intensities from Au-SPP coupled nanometre- and micrometre-scaled ZnO wires through an optimized 5 nm-thick SiO2 spacer compared to that obtained from bare ZnO on a Si substrate without SPP coupling. Cathodoluminescence measurements and simulations demonstrated that the plasmonic hybrid nanostructure enables the strong localization of the SPP field, resulting in significantly enhanced UV emission. This plasmonic structure paves the way to nanoscale UV-optical lasers and sensors.

Variation of electrical properties in thickening Al-doped ZnO films: role of defect chemistry

This study addresses the variation in electrical properties in a thickening Al-doped ZnO (AZO) film up to 348 nm and correlates this with its defect chemistry.

Enhanced photo-response properties of a single ZnO microwire photodetector by coupling effect between localized Schottky barriers and piezoelectric potential

The coupling effect between localized Schottky barriers (SBs) and piezoelectric potential that impact the photo-response properties of a single ZnO microwire (MW) photodetector (PD) is studied. Localized SBs is introduced by Au NPs decoration. The negatively charged Au NPs deplete more carriers near the ZnO surface, which raises the SB height and sharply reduces the recover time of the PD from 142.4 s to 0.7 s. Moreover, after applying the compressive strain, the band structure of ZnO MW changes and piezoelectric potential generates, which further raises the SB height, thickens the depletion region and improves photo-response properties of the detector. The dark current is reduced by about 5 orders and its on/off current ratio increased by about 6 orders, which decreases the power consumption of the detector significantly. Under the above coupling effect between piezoelectric potential and localized SBs, the recover time of the detector is further reduced to 0.1 s ultimately. This work suggests that rational integration of localized SBs and piezoelectric potential is a viable approach to get ZnO MW PDs with high on/off ratio, ultrafast response speed and low power consumption.

Ultrafast Exciton Dynamics in InGaN/GaN and Rh/Cr2O3 Nanoparticle-Decorated InGaN/GaN Nanowires

Ultrafast exciton and charge-carrier dynamics in InGaN/GaN nanowires (NWs) with and without Rh/Cr2O3 nanoparticle (NP) decoration have been investigated using femtosecond transient absorption (TA) techniques with excitation at 415 nm and white-light probe (450-700 nm). By comparing the TA profiles between InGaN/GaN and InGaN/GaN-Rh/Cr2O3 NWs, an additional decay component on the medium time scale (∼50 ps) was identified with Rh/Cr2O3 decoration, which is attributed to interfacial charge transfer from InGaN/GaN NWs to Rh/Cr2O3 NPs, desired for light energy conversion applications. This is consistent with reduced photoluminescence (PL) of the NWs by the Rh/Cr2O3 NPs. A kinetic model was developed to explain the TA results and gain further insight into the exciton and charge-carrier dynamics.

Electronic Structure and Magnetism of Mn-Doped ZnO Nanowires

The geometric structures, electronic and magnetic properties of Mn-doped ZnO nanowires were investigated using density functional theory. The results indicated that all the calculated energy differences were negative, and the energy of the ground state was 0.229 eV lower than ferromagnetic coupling, which show higher stability in antiferromagnetic coupling. The calculated results indicated that obvious spin splitting phenomenon occurred near the Femi level. The Zn atoms on the inner layer of ZnO nanowires are easily substituted by Mn atoms along the [0001] direction. It was also shown that the Mn2+-O2--Mn2+ magnetic coupling formed by intermediate O atom was proved to be caused by orbital hybridization between Mn 3d and O 2p states. The magnetic moments were mainly attributed to the unpaired Mn 3d orbitals, but not relevant with doping position of Mn atoms. Moreover, the optical properties of Mn-doped ZnO nanowires exhibited a novel blue-shifted optical absorption and enhanced ultraviolet-light emission. The above results show that the Mn-doped ZnO nanowires are a new type of magneto-optical materials with great promise.

Laser treatment of Ag@ZnO nanorods as long-life-span SERS surfaces

UV nanosecond laser pulses have been used to produce a unique surface nanostructuration of Ag@ZnO supported nanorods (NRs). The NRs were fabricated by plasma enhanced chemical vapor deposition (PECVD) at low temperature applying a silver layer as promoter. The irradiation of these structures with single nanosecond pulses of an ArF laser produces the melting and reshaping of the end of the NRs that aggregate in the form of bundles terminated by melted ZnO spherical particles. Well-defined silver nanoparticles (NPs), formed by phase separation at the surface of these melted ZnO particles, give rise to a broad plasmonic response consistent with their anisotropic shape. Surface enhanced Raman scattering (SERS) in the as-prepared Ag@ZnO NRs arrays was proved by using a Rhodamine 6G (Rh6G) chromophore as standard analyte. The surface modifications induced by laser treatment improve the stability of this system as SERS substrate while preserving its activity.

Design of TiO2/Au nanoparticle films with controlled crack formation and different architectures using a centrifugal strategy

Centrifugal strategy is demonstrated to enable the design of hybrid nanocomposite films with controllable architecture, porosity, crack density and thickness.

Enhanced multi-phonon Raman scattering and nonlinear optical power limiting in ZnO:Au nanostructures

Enhanced Raman scattering and nonlinear optical power limiting in ZnO:Au nanostructures is demonstrated.

Surface plasmon enhanced photoluminescence of ZnO nanorods by capping reduced graphene oxide sheets

A hybrid structure of reduced graphene oxide (rGO) sheets/ZnO nanorods was prepared and its photoluminescence intensity ratio between the UV and defect emission was enhanced up to 14 times. By controlling the reduction degree of rGO on the surface of ZnO nanorods, the UV emission was tuned with the introduction of localized surface plasmons resonance of rGO sheets. The suppression of the defect emission was ascribed to the charge transfer and decreased with the distance between the rGO and ZnO nanorods.

Hexagonal core-shell and alloy Au/Ag nanodisks on ZnO nanorods and their optical enhancement effect

Au and Ag hybrid hexagonal nanodisks were synthesized on ZnO nanorods' (0002) surface via a new two-step deposition-annealing method. The structural, compositional, as well as optical investigations were carried out systematically to find out the nanodisks' formation mechanism and optical enhancement effect. It was shown that the core-shell Au/Ag nanodisk can be formed under rapid annealing temperature of 500°C, while Au/Ag alloy nanodisks are formed if higher temperatures (>550°C) are applied. The optical effect from these nanodisks was studied through photoluminescence and absorption spectroscopy. It was found that the carrier-plasmon coupling together and carrier transfer between metal and ZnO contribute to the emission enhancement. Furthermore, the results suggest that the composition of nanodisk on the vicinity of metal/ZnO interface plays an important role in terms of the enhancement factors.

Palladium nanoparticle enhanced giant photoresponse at LaAlO3/SrTiO3 two-dimensional electron gas heterostructures

With LaAlO3 surface modification by Pd nanoparticles, LaAlO3/SrTiO3 (LAO/STO) interfacial two-dimensional electron gas presents a giant optical switching effect with a photoconductivity on/off ratio as high as 750% under UV light irradiation. Pd nanoparticles with a size around 2 nm are deposited on top of the LAO surface, and the LAO/STO interface exhibits a giant response to UV light with a wavelength shorter than 400 nm. This giant optical switching behavior has been explained by the Pd nanoparticle's catalytic effect and surface/interface charge coupling.

Retrieving the spatial distribution of cavity modes in dielectric resonators by near-field imaging and electrodynamics simulations

For good performance of photonic devices whose working principle is based on the enhancement of electromagnetic fields obtained by confining light into dielectric resonators with dimensions in the nanometre length scale, a detailed knowledge of the optical mode structure becomes essential. However, this information is usually lacking and can only be indirectly obtained by conventional spectroscopic techniques. Here we unraveled the influence of wire size, incident wavelength, degree of polarization and the presence of a substrate on the optical near fields generated by cavity modes of individual hexagonal ZnO nanowires by combining scanning near-field optical microscopy (SNOM) with electrodynamics calculations within the discrete dipole approximation (DDA). The near-field patterns obtained with very high spatial resolution, better than 50 nm, exhibit striking size and spatial-dispersion effects, which are well accounted for within DDA, using a wavevector-dependent dipolar interaction and considering the dielectric anisotropy of ZnO. Our results show that both SNOM and DDA simulations are powerful tools for the design of optoelectronic devices able to manipulate light at the nanoscale.

Oxide nanowires for spintronics: materials and devices

Spintronics, or spin-based data storage and manipulation technology, is emerging as a very active research area because of both new science and potential technological applications. As the characteristic lengths of spin-related phenomena naturally fall into the nanometre regime, researchers start applying the techniques of bottom-up nanomaterial synthesis and assembly to spintronics. It is envisaged that novel physics regarding spin manipulation and domain dynamics can be realized in quantum confined nanowire-based devices. Here we review the recent breakthroughs related to the applications of oxide nanowires in spintronics from the perspectives of both material candidates and device fabrication. Oxide nanowires generally show excellent crystalline quality and tunable physical properties, but more efforts are imperative as we strive to develop novel spintronic nanowires and devices.

Assembly of colloidal nanoparticles directed by the microstructures of polycrystalline ice

We show that the microstructures of polycrystalline ice can serve as a confining template for one-dimensional assembly of colloidal nanoparticles. Upon simply freezing an aqueous colloid, the nanoparticles are excluded from ice grains and form chains in the ice veins. The nanoparticle chains are transferable and can be strengthened by polymer encapsulation. After coating with polyaniline shells, simple sedimentation is used to remove large aggregates, enriching single-line chains of 40 nm gold nanoparticles with a total length of several micrometers. When gold nanorods were used, they formed one-dimensional aggregates with specific end-to-end conformation, indicating the confining effects of the nanoscale ice veins at the final stage of freezing. The unbranched and ultralong plasmonic chains are of importance for future study of plasmonic coupling and development of plasmonic waveguides.

Nanoscale semiconductor-insulator-metal core/shell heterostructures: facile synthesis and light emission

Controllably constructing hierarchical nanostructures with distinct components and designed architectures is an important theme of research in nanoscience, entailing novel but reliable approaches of bottom-up synthesis. Here, we report a facile method to reproducibly create semiconductor-insulator-metal core/shell nanostructures, which involves first coating uniform MgO shells onto metal oxide nanostructures in solution and then decorating them with Au nanoparticles. The semiconductor nanowire core can be almost any material and, herein, ZnO, SnO(2) and In(2)O(3) are used as examples. We also show that linear chains of short ZnO nanorods embedded in MgO nanotubes and porous MgO nanotubes can be obtained by taking advantage of the reduced thermal stability of the ZnO core. Furthermore, after MgO shell-coating and the appropriate annealing treatment, the intensity of the ZnO near-band-edge UV emission becomes much stronger, showing a 25-fold enhancement. The intensity ratio of the UV/visible emission can be increased further by decorating the surface of the ZnO/MgO nanowires with high-density plasmonic Au nanoparticles. These heterostructured semiconductor-insulator-metal nanowires with tailored morphologies and enhanced functionalities have great potential for use as nanoscale building blocks in photonic and electronic applications.

Pd-nanoparticle-decorated ZnO nanowires: ultraviolet photosensitivity and photoluminescence properties

ZnO nanowires (NWs) have been decorated with Pd nanoparticles of sizes less than 10 nm (Pd-ZnO NWs) via a chemical solution route. The microstructural characterizations have been done using field emission scanning electron and high-resolution transmission electron microscopes. The effects of attaching Pd nanoparticles to the walls of ZnO NWs have been investigated by studying the ultraviolet (UV) photosensitivity and photoluminescence (PL) properties. The surface-modified NWs show a UV photosensitivity more than double and a response seven times faster compared to the bare NWs. The photocarrier relaxation under the steady UV illumination condition is quite different in Pd-ZnO NWs. The higher and faster photosensitivity has been explained on the basis of photocarrier transfer from the conduction band of ZnO to the Fermi level of Pd and subsequent electron trapping by the adsorbed O(2) molecules on the NWs' surface, which have been presented through a proposed model. The PL spectrum of Pd-ZnO NWs shows that the intensities of the band-edge and defect-related emissions decrease and increase, respectively, due to Pd anchoring, the effect being pronounced as the density of Pd nanoparticles increases.

Enhanced photoluminescence and photoconductivity of ZnO nanowires with sputtered Zn

We have sputtered Zn onto quasi-one-dimensional ZnO nanowires (NWs) in order to investigate the effect of Zn diffusion on the photoluminescence and photoconduction properties of ZnO NWs. Elemental mapping clearly indicates higher Zn concentration in the NWs due to diffusion of Zn. The Zn-sputtered NWs show an enhanced ultraviolet emission with 7 nm red shift. Since the ionization energy of Zni is 51 meV, the enhanced PL emission with a red shift is correlated to the coupling between free exciton and zinc interstitials (Zni) defects. The photocurrent transients show almost 20 times more photocurrent generation in Zn/ZnO NWs compared to the as-grown NWs. In contrast, the thin film shows no significant change in the photoluminescence and photoconductivity. Based on the photoconductivity and photoluminescence results, we predict that Zn diffusion in the NWs occurs easily compared to the films because of the smaller dimensions of the NWs.

Decoration of ZnO nanowires with Pt nanoparticles and their improved gas sensing and photocatalytic performance

Pt nanoparticles were introduced on the surface of ZnO nanowires using a chemically driven self-assembly method. Through this controllable method, Pt-nanoparticle-functionalized ZnO nanowires (Pt NPs-ZnO NWs) with uniform particle dispersion, tunable Pt particle sizes, and narrow particle size distribution were obtained. Changes in the morphology of the decorative preparation were observed as the amount of linker reagent and the concentration of Pt nanoparticle solution were altered. The as-prepared Pt NPs-ZnO NWs with optimal morphology showed excellent gas sensing and photocatalytic performance. Tuning of the functionalities of photocatalytic and gas sensors can be obtained by tailoring the morphology of Pt NP-ZnO NW composite materials.

Stable enhancement of near-band-edge emission of ZnO nanowires by hydrogen incorporation

We report on the photoluminescence properties of ZnO nanowires treated with a mild Ar plasma. The nanowires exhibited stable and strong enhancement of the near-band-edge emission and quenching of the deep level emission. The low temperature PL revealed a strong hydrogen donor-bound-exciton line in the plasma-treated samples indicating unintentional incorporation of hydrogen during the plasma treatment. To confirm the results, hydrogen was implanted into the ZnO nanowires with a low ion energy of 600 eV and different fluences. The observed result can be related to the passivation of deep centers by hydrogen. The absolute photoluminescence intensity measured by an integrating sphere showed stable and strong UV emission from the treated samples even after several weeks.

Photoluminescence and photoconductivity of ZnS-coated ZnO nanowires

ZnO nanowires (NWs) with a ZnS coating are synthesized in order to modify the surface without changing the diameter of the NWs. They have the wurtzite ZnO at the core and a cubic ZnS at the outer layer. The NWs show a sharp ultraviolet and a broad visible emission of the photoluminescence spectra. Surface modification has led to a change in the position of the maxima of the visible emission in ZnO-ZnS NWs. The photocarrier relaxation under steady UV illumination occurs in ZnO NW arrays but is absent in ZnO-ZnS NW arrays. The dark current value for both type of NWs are similar, whereas the photocurrent value is much higher in the surface-modified NWs. Higher photocurrent value indicates a transport of the photogenerated carriers from the ZnS layer to ZnO during UV illumination. The carrier transport mechanism is proposed through a model.

Lattice variation and Raman spectroscopy in hierarchical heterostructures of zinc antimonate nanoislands on ZnO nanobelts

In ZnO hierarchical heterostructures of zinc antimonate nanoislands on ZnO nanobelts, the substitution of Sb(5+) for Zn(2+) induces lattice contraction and a variation in vacancy defects, and moreover the preferential accumulation and segregation of Sb in [001] planes results in the intense perturbation of atomic motion in the a-b plane. Under nonresonant conditions, nonpolar E(2)(high) and polar quasi-longitudinal optic (LO) modes decrease in frequency due to finite-size and phonon confinement effects. Under resonant conditions, localized excitons can ionize to free carriers and form plasmons at higher excitation power density, resulting in the transformation of scattering coupling from localized exciton-LO-phonon to LO-phonon-plasmon. The intensity ratio of 2LO/1LO decreases and multiphonon scattering shows a decrease in frequency with unequal neighboring interval, and moreover the scattering coupling between the continuum of electron-hole plasmon and the discrete LO phonons causes an asymmetric lineshape.