Identifying individual n- and p-type ZnO nanowires by the output voltage sign of piezoelectric nanogenerator

High Piezoelectric Conversion Properties of Axial InGaN/GaN Nanowires

We demonstrate for the first time the efficient mechanical-electrical conversion properties of InGaN/GaN nanowires (NWs). Using an atomic force microscope equipped with a modified Resiscope module, we analyse the piezoelectric energy generation of GaN NWs and demonstrate an important enhancement when integrating in their volume a thick In-rich InGaN insertion. The piezoelectric response of InGaN/GaN NWs can be tuned as a function of the InGaN insertion thickness and position in the NW volume. The energy harvesting is favoured by the presence of a PtSi/GaN Schottky diode which allows to efficiently collect the piezo-charges generated by InGaN/GaN NWs. Average output voltages up to 330 ± 70 mV and a maximum value of 470 mV per NW has been measured for nanostructures integrating 70 nm-thick InGaN insertion capped with a thin GaN top layer. This latter value establishes an increase of about 35% of the piezo-conversion capacity in comparison with binary p-doped GaN NWs. Based on the measured output signals, we estimate that one layer of dense InGaN/GaN-based NW can generate a maximum output power density of about 3.3 W/cm². These results settle the new state-of-the-art for piezo-generation from GaN-based NWs and offer a promising perspective for extending the performances of the piezoelectric sources.

Energy harvesting efficiency in GaN nanowire-based nanogenerators: the critical influence of the Schottky nanocontact

The performances of 1D-nanostructure based nanogenerators are governed by the ability of nanostructures to efficiently convert mechanical deformation into electrical energy, and by the efficiency with which this piezo-generated energy is harvested. In this paper, we highlight the crucial influence of the GaN nanowire-metal Schottky nanocontact on the energy harvesting efficiency. Three different metals, p-type doped diamond, PtSi and Pt/Ir, have been investigated. By using an atomic force microscope equipped with a Resiscope module, we demonstrate that the harvesting of piezo-generated energy is up to 2.4 times more efficient using a platinum-based Schottky nanocontact compared to a doped diamond-based nanocontact. In light of Schottky contact characteristics, we evidence that the conventional description of the Schottky diode cannot be applied. The contact is governed by its nanometer size. This specific behaviour induces notably a lowering of the Schottky barrier height, which gives rise to an enhanced conduction. We especially demonstrate that this effective thinning is directly correlated with the improvement of the energy harvesting efficiency, which is much pronounced for Pt-based Schottky diodes. These results constitute a building block to the overall improvement of NW-based nanogenerator devices.

A novel flexible nanogenerator made of ZnO nanoparticles and multiwall carbon nanotube

In this paper, a novel flexible nanogenerator (FNG) made of zinc-oxide (ZnO) nanoparticles (NPs) and multiwall-carbon nanotubes (MW-CNTs) is presented. In this structure, ZnO NPs and MW-CNTs are mixed with polydimethylsiloxane (PDMS) uniformly to form an entire flexible nanogenerator. Serial tests illustrate that the output voltage and power density are as high as 7.5 V and 18.75 μW per cycle, respectively. Furthermore, by foot stamp on the FNG, a peak voltage as high as 30 V can be generated. Comparing to the control samples, it is also proved that adding MW-CNTs into the matrix could significantly enhance the output voltage from 0.8 to 7.5 V. In summary, our work indicates that the realization of flexible nanogenerators made of ZnO NPs and MW-CNTs is technologically feasible, which may bring out some important and interesting applications in energy harvesting.

Piezotronic effect in solution-grown p-type ZnO nanowires and films

Investigating the piezotronic effect in p-type piezoelectric semiconductor is critical for developing a complete piezotronic theory and designing/fabricating novel piezotronic applications with more complex functionality. Using a low temperature solution method, we were able to produce ultralong (up to 60 μm in length) Sb doped p-type ZnO nanowires on both rigid and flexible substrates. For the p-type nanowire field effect transistor, the on/off ratio, threshold voltage, mobility, and carrier concentration of 0.2% Sb-doped sample are found to be 10(5), 2.1 V, 0.82 cm(2)·V(-1)·s(-1), and 2.6 × 10(17) cm(-3), respectively, and the corresponding values for 1% Sb doped samples are 10(4), 2.0 V, 1.24 cm(2)·V(-1)·s(-1), and 3.8 × 10(17) cm(-3). We further investigated the universality of piezotronic effect in the as-synthesized Sb-doped p-type ZnO NWs and reported for the first time strain-gated piezotronic transistors as well as piezopotential-driven mechanical energy harvesting based on solution-grown p-type ZnO NWs. The results presented here broaden the scope of piezotronics and extend the framework for its potential applications in electronics, optoelectronics, smart MEMS/NEMS, and human-machine interfacing.

Piezo-semiconductive quasi-1D nanodevices with or without anti-symmetry

The piezopotential in floating, homogeneous, quasi-1D piezo-semiconductive nanostructures under axial stress is an anti-symmetric (i.e., odd) function of force. Here, after introducing piezo-nano-devices with floating electrodes for maximum piezo-potential, we show that breaking the anti-symmetric nature of the piezopotential-force relation, for instance by using conical nanowires, can lead to better nanogenerators, piezotronic and piezophototronic devices.

An improved AFM cross-sectional method for piezoelectric nanostructures properties investigation: application to GaN nanowires

We present an improved atomic force microscopy (AFM) method to study the piezoelectric properties of nanostructures. An AFM tip is used to deform a free-standing piezoelectric nanowire. The deflection of the nanowire induces an electric potential via the piezoelectric effect, which is measured by the AFM coating tip. During the manipulation, the applied force, the forcing location and the nanowire's deflection are precisely known and under strict control. We show the measurements carried out on intrinsic GaN and n-doped GaN-AlN-GaN nanowires by using our method. The measured electric potential, as high as 200 mV for n-doped GaN-AlN-GaN nanowire and 150 mV for intrinsic GaN nanowire, have been obtained, these values are higher than theoretical calculations. Our investigation method is exceptionally useful to thoroughly examine and completely understand the piezoelectric phenomena of nanostructures. Our experimental observations intuitively reveal the great potential of piezoelectric nanostructures for converting mechanical energy into electricity. The piezoelectric properties of nanostructures, which are demonstrated in detail in this paper, represent a promising approach to fabricating cost-effective nano-generators and highly sensitive self-powered NEMS sensors.

Near UV LEDs made with in situ doped p-n homojunction ZnO nanowire arrays

Catalyst-free p-n homojunction ZnO nanowire (NW) arrays in which the phosphorus (P) and zinc (Zn) served as p- and n-type dopants, respectively, have been synthesized for the first time by a controlled in situ doping process for fabricating efficient ultraviolet light-emitting devices. The doping transition region defined as the width for P atoms gradually occupying Zn sites along the growth direction can be narrowed down to sub-50 nm. The cathodoluminescence emission peak at 340 nm emitted from n-type ZnO:Zn NW arrays is likely due to the Burstein-Moss effect in the high electron carrier concentration regime. Further, the electroluminescence spectra from the p-n ZnO NW arrays distinctively exhibit the short-wavelength emission at 342 nm and the blue shift from 342 to 325 nm is observed as the operating voltage further increasing. The ZnO NW p-n homojunctions comprising p-type segment with high electron concentration are promising building blocks for short-wavelength lighting device and photoelectronics.

Phosphorus doped Zn(1-x)Mg(x)O nanowire arrays

We demonstrate the growth of phosphorus doped Zn(1-x)Mg(x)O nanowire (NW) using pulsed laser deposition. For the first time, p-type Zn(0.92)Mg(0.08)O:P NWs are likely obtained in reference to atomic force microscopy based piezoelectric output measurements, X-ray photoelectron spectroscopy, and the transport property between the NWs and a n-type ZnO film. A shallow acceptor level of approximately 140 meV is identified by temperature-dependent photoluminescence. A piezoelectric output of 60 mV on average has been received using the doped NWs. Besides a control on NW aspect ratio and density, band gap engineering has also been achieved by alloying with Mg to a content of x = 0.23. The alloyed NWs with controllable conductivity type have potential application in high-efficiency all-ZnO NWs based LED, high-output ZnO nanogenerator, and other optical or electrical devices.