Nanoscale memory devices

Water-Soluble Polythiophene-Conjugated Polyelectrolyte-Based Memristors for Transient Electronics

The key to protect sensitive information stored in electronic memory devices from disclosure is to develop transient electronic devices that are capable of being destroyed quickly in an emergency. By using a highly water-soluble polythiophene-conjugated polyelectrolyte PTT-NMI⁺Br^- as an active material, which was synthesized by the reaction of poly[thiophene-alt-4,4-bis(6-bromohexyl)-4H-cyclopenta(1,2-b:5,4-b')dithiophene] with N-methylimidazole, a flexible electronic device, Al/PTT-NMI⁺Br^-/ITO-coated PET (ITO: indium tin oxide; PET: polyethylene terephthalate), is successfully fabricated. This device shows a typical nonvolatile rewritable resistive random access memory (RRAM) effect at a sweep voltage range of ±3 V and a history-dependent memristive switching performance at a small sweep voltage range of ±1 V. Both the learning/memorizing functions and the synaptic potentiation/depression of biological systems have been emulated. The switching mechanism for the PTT-NMI⁺Br^--based electronic device may be highly associated with ion migration under bias. Once water is added to this device, it will be destructed rapidly within 20 s due to the dissolution of the active layer. This device is not only a typical transient device but can also be used for constructing conventional memristors with long-term stability after electronic packaging. Furthermore, the soluble active layer in the device can be easily recycled from its aqueous solution and reused for fabricating new transient memristors. This work offers a train of new thoughts for designing and constructing a neuromorphic computing system that can be quickly destroyed with water in the near future.

Nanodots Derived from Layered Materials: Synthesis and Applications

Layered 2D materials, such as graphene, transition metal dichalcogenides, transition metal oxides, black phosphorus, graphitic carbon nitride, hexagonal boron nitride, and MXenes, have attracted intensive attention over the past decades owing to their unique properties and wide applications in electronics, catalysis, energy storage, biomedicine, etc. Further reducing the lateral size of layered 2D materials down to less than 10 nm allows for preparing a new class of nanostructures, namely, nanodots derived from layered materials. Nanodots derived from layered materials not only can exhibit the intriguing properties of nanodots due to the size confinement originating from the ultrasmall size, but also can inherit some unique properties of ultrathin layered 2D materials, making them promising candidates in a wide range of applications, especially in biomedicine and catalysis. Here, a comprehensive summary on the materials categories, advantages, synthesis methods, and potential applications of these nanodots derived from layered materials is provided. Finally, personal insights about the challenges and future directions in this promising research field are also given.

Spectroelectrochemical Properties and Catalytic Activity in Cyclohexane Oxidation of the Hybrid Zr/Hf-Phthalocyaninate-Capped Nickel(II) and Iron(II) tris-Pyridineoximates and Their Precursors

The in situ spectroelectrochemical cyclic voltammetric studies of the antimony-monocapped nickel(II) and iron(II) tris-pyridineoximates with a labile triethylantimony cross-linking group and Zr(IV)/Hf(IV) phthalocyaninate complexes were performed in order to understand the nature of the redox events in the molecules of heterodinuclear zirconium(IV) and hafnium(IV) phthalocyaninate-capped derivatives. Electronic structures of their 1e-oxidized and 1e-electron-reduced forms were experimentally studied by electron paramagnetic resonance (EPR) spectroscopy and UV−vis−near-IR spectroelectrochemical experiments and supported by density functional theory (DFT) calculations. The investigated hybrid molecular systems that combine a transition metal (pseudo)clathrochelate and a Zr/Hf-phthalocyaninate moiety exhibit quite rich redox activity both in the cathodic and in the anodic region. These binuclear compounds and their precursors were tested as potential catalysts in oxidation reactions of cyclohexane and the results are discussed.

Breaking the Quantum PIN Code of Atomic Synapses

Atomic synapses represent a special class of memristors whose operation relies on the formation of metallic nanofilaments bridging two electrodes across an insulator. Due to the magnifying effect of this narrowest cross section on the device conductance, a nanometer-scale displacement of a few atoms grants access to various resistive states at ultimately low energy costs, satisfying the fundamental requirements of neuromorphic computing hardware. However, device engineering lacks the complete quantum characterization of such filamentary conductance. Here we analyze multiple Andreev reflection processes emerging at the filament terminals when superconducting electrodes are utilized. Thereby, the quantum PIN code, i.e., the transmission probabilities of each individual conduction channel contributing to the conductance of the nanojunctions, is revealed. Our measurements on Nb₂O₅ resistive switching junctions provide profound experimental evidence that the onset of the high conductance ON state is manifested via the formation of truly atomic-sized metallic filaments.

Programmable, electroforming-free TiOx/TaOx heterojunction-based non-volatile memory devices

Electroforming-free resistive switching in memristors is essential to reliably achieving the performance of high switching speed, high endurance, good signal retention, and low power consumption expected for next-generation computing devices. Although there have been various approaches to resolve the issues observed with the electroforming process in oxide-based memory devices, most of them end up having high SET and RESET voltages and short lifetimes. We present a heterojunction interface of oxygen-vacancy-defect-rich ultrananocrystalline TiOx and TaOx films used as the switching matrix, which enables high-quality electroforming-free switching with a much lower programming voltage (+0.5-0.8 V), a high endurance of over 104 cycles and good retention performance with an estimated device lifetime of over 10 years. The electroforming-free switching behavior is governed by migration of oxygen vacancies driven by electric field localization that is imposed by the ultrananocrystalline nature of the TaOx film, serving as the switching matrix, with the TiOx film serving as an additional oxygen vacancy source to reduce the overall resistivity of TaOx and provide low-bias rectification. The ability to perform electroforming-free resistive switching along with excellent switching repeatability and retention capabilities for various digital and analog programmable voltages enables high scalability and large density integration of the cross-bar ReRAM framework.

Two-Parameter Power Formalism for Structural Screening of Ion Mobility Trends: Applied Study on Artificial Molecular Switches

Recent literature provides increasing samples of structural studies relying on ion mobility coupled to mass spectrometry in view of characterizing gas-phase conformation and energetics properties of biomolecular ions. A typical framework consists in experimentally monitoring the collisional cross sections for various experimental conditions and using them as references to select appropriate candidate structures issued from theoretical modeling. Although it has proved successful for structural assignment, this process is resource costly and lengthy, namely due to intricacies in the selection of appropriate input geometries. In the present work, we propose simplified methodologies dedicated to the systematic screening of ion mobility data acquired on systems built from repetitive subunits and detail their application to challenging artificial molecular switch systems. Capitalizing on coarse-grained design, we first demonstrate how the assimilation of subunits into adequately assembled building-blocks can be used for fast assignments of a system topology. Further focusing on topology-specific differential ion mobility trends, we show that the building-block assemblies can be fused into single fully convex solid figure models, i.e., sphere and cylinder, whose projected areas follow a two-parameter power formalism A × n^B. We show that the fitting parameters A and B were assigned as structural descriptors respectively associated with the dimensions of each constitutive subunit, i.e., size parameter, and with their assembled tridimensional arrangement, i.e., shape parameter. The present work provides a ready-to-use method for the screening of IM-MS data sets that is expected to facilitate the eventual design of input structures whenever advanced modeling calculations are required.

Universal 1/f type current noise of Ag filaments in redox-based memristive nanojunctions

The microscopic origins and technological impact of 1/f type current fluctuations in Ag based, filamentary type resistive switching devices have been investigated upon downscaling toward the ultimate single atomic limit. The analysis of the low-frequency current noise spectra revealed that the main electronic noise contribution arises from the resistance fluctuations due to internal dynamical defects of Ag nanofilaments. The resulting 0.01-1% current noise ratio, i.e. the total noise level with respect to the mean value of the current, is found to be universal: its magnitude only depends on the total resistance of the device, irrespective of the materials aspects of the surrounding solid electrolyte and of the specific filament formation procedure. Moreover, the resistance dependence of the current noise ratio also displays the diffusive to ballistic crossover, confirming that stable resistive switching operation utilizing Ag nanofilaments is not compromised even in truly atomic scale junctions by technologically impeding noise levels.

Direct covalent modification of black phosphorus quantum dots with conjugated polymers for information storage

It has long been recognized that a small switching bias window, which is defined as the difference between the switch-on and switch-off voltages (Δ|VON - VOFF|), and a high ON/OFF current ratio would be greatly favorable to reduce the power consumption of memory devices and to decrease the information misreading rate in digital memory devices. In contrast to two-dimensional BP nanosheets, zero dimensional BP quantum dots (BPQDs) show more exciting physical and chemical properties. By using newly synthesized poly[(9,9-dioctyl-9H-fluorene)-alt-(4-(9H-carbazol-9-yl)aniline)] (PFCz-NH2) as the synthetic precursor, a highly soluble diazotated polymer, PFCz-N2+BF4-, was successfully synthesized and used to react with BPQDs under aqueous conditions to give the first conjugated polymer covalently functionalized BPQDs (PFCz-g-BPQDs). The as-prepared Al/PFCz-g-BPQDs/ITO device exhibits excellent nonvolatile rewritable memory performance, with a large ON/OFF current ratio (>107) and low switch-on/off voltages (-0.89/+1.95 V). In contrast, the Al/PFCz-NH2 : BPQDs blend/ITO device also shows a rewritable memory effect, but its ON/OFF current ratio and Δ|VON - VOFF| value are found to be 3 × 103 and 5.47 (Δ|+2.53-2.94|), respectively. This work, which offers an easy one-step strategy for direct covalent functionalization of BPQDs, opens a way to explore more applications of BPQDs.

High-Performance Single-Active-Layer Memristor Based on an Ultrananocrystalline Oxygen-Deficient TiOx Film

The theoretical and practical realization of memristive devices has been hailed as the next step for nonvolatile memories, low-power remote sensing, and adaptive intelligent prototypes for neuromorphic and biological systems. However, the active materials of currently available memristors need to undergo an often destructive high-bias electroforming process in order to activate resistive switching. This limits their device performance in switching speed, endurance/retention, and power consumption upon high-density integration, due to excessive Joule heating. By employing a nanocrystalline oxygen-deficient TiO_x switching matrix to localize the electric field at discrete locations, it is possible to resolve the Joule heating problem by reducing the need for electroforming at high bias. With a Pt/TiO_x/Pt stacking architecture, our device follows an electric field driven, vacancy-modulated interface-type switching that is sensitive to the junction size. By scaling down the junction size, the SET voltage and output current can be reduced, and a SET voltage as low as +0.59 V can be obtained for a 5 × 5 μm² junction size. Along with its potentially fast switching (over 10⁵ cycles with a 100 μs voltage pulse) and high retention (over 10⁵ s) performance, memristors based on these disordered oxygen-deficient TiO_x films promise viable building blocks for next-generation nonvolatile memories and other logic circuit systems.

Where Ion Mobility and Molecular Dynamics Meet To Unravel the (Un)Folding Mechanisms of an Oligorotaxane Molecular Switch

At the interface between foldamers and mechanically interlocked molecules, oligorotaxanes exhibit a spring-like folded secondary structure with remarkable mechanical and physicochemical properties. Among these properties, the ability of oligorotaxanes to act as molecular switches through controlled modulations of their spatial extension over (un)folding dynamics is of particular interest. The present study aims to assess and further characterize this remarkable feature in the gas phase using mass spectrometry tools. In this context, we focused on the [4]5NPR⁺¹² oligorotaxane molecule complexed with PF₆^- counterion and probed its co-conformational states as a function of the in-source-generated charge states. Data were interpreted in light of electronic secondary structure computations at the PM6 and DFT levels. Our results highlight two major co-conformational groups associated either with folded compact structures, notably stabilized by intramolecular π-π interactions and predominant for low charge states or with fully stretched structures resulting from significant Coulombic repulsions at high charge states. Between, the oligorotaxane adopts intermediate folded co-conformations, suggesting a stepwise unfolding pathway under increasing repulsive Coulombic constraints. The reversibility of this superstructural transition was next interrogated under electron-driven (nondissociative electron transfer) and heat-driven (collision-induced unfolding) activation stimuli. The outcomes support the feasibility to either unfold or (partially) refold the oligorotaxane foldamer on purpose in the gas phase. Our results show that the balance between the stabilizing π-π interactions and the versatile Coulomb interactions dictates the elongation state of the foldamer in the gas phase and emphasizes the adequacy of mass spectrometry tools for the superstructural characterization of desolvated prototypical artificial molecular machines.

Organic Molecular Layer with High Electrochemical Bistability: Synthesis, Structure, and Properties of a Dynamic Redox System with Lipoate Units for Binding to Au(111)

Biphenyl-2,2'-diylbis(10-methyl-9-methyleneacridan)-type electron donor 1, which has two tethered cyclic disulfide units at the 6,6'-positions, was designed and synthesized as the first member of a dynamic redox (dyrex) system that can form molecular layers on a Au(111) electrode. Upon the two-electron (2 e) oxidation of 1, the persistent dicationic dye 2²⁺ was generated with the formation of a new C-C bond, which is reversibly cleaved upon 2 e reduction to regenerate 1 (dyrex behavior). Similar dyrex interconversion occurs in the molecular layer of 1 on gold. The chemical identities of 1/Au and electrochemically generated 2²⁺ /Au were unambiguously determined by in situ IR spectroscopy in the attenuated total reflection mode. In situ scanning tunneling microscopy (STM) was conducted under electrochemical conditions to examine the surface structure of 1 adsorbed on a Au(111) electrode. Although no long-range-ordered morphology was found in the STM image of 1, an in situ STM study of the potential-induced dyrex reaction of 1 to 2²⁺ showed that the grained spots in the image became slightly brighter.

Asymmetry-induced resistive switching in Ag-Ag2S-Ag memristors enabling a simplified atomic-scale memory design

Prevailing models of resistive switching arising from electrochemical formation of conducting filaments across solid state ionic conductors commonly attribute the observed polarity of the voltage-biased switching to the sequence of the active and inert electrodes confining the resistive switching memory cell. Here we demonstrate stable switching behaviour in metallic Ag-Ag2S-Ag nanojunctions at room temperature exhibiting similar characteristics. Our experimental results and numerical simulations reveal that the polarity of the switchings is solely determined by the geometrical asymmetry of the electrode surfaces. By the lithographical design of a proof of principle device we demonstrate the merits of simplified fabrication of atomic-scale, robust planar Ag2S memory cells.

Resistive switching in metallic Ag2S memristors due to a local overheating induced phase transition

Resistive switchings in nanometer-scale metallic junctions formed between an inert metallic tip and an Ag film covered by a thin Ag2S layer are investigated as a function of temperature at different biasing conditions. The observed switching threshold voltages along with the ON and OFF state resistances are quantitatively understood by taking the local overheating of the junction volume and the resulting structural phase transition of the Ag2S matrix into account. Our results demonstrate that the essential characteristics of the resistive switching in Ag2S based nanojunctions can be routinely optimized by suitable sample preparation and biasing schemes.

Non-exponential resistive switching in Ag2S memristors: a key to nanometer-scale non-volatile memory devices

The dynamics of resistive switchings in nanometer-scale metallic junctions formed between an inert metallic tip and an Ag film covered by a thin Ag2S layer are investigated. Our thorough experimental analysis and numerical simulations revealed that the resistance change upon a switching bias voltage pulse exhibits a strongly non-exponential behaviour yielding markedly different response times at different bias levels. Our results demonstrate the merits of Ag2S nanojunctions as nanometer-scale non-volatile memory cells with stable switching ratios, high endurance as well as fast response to write/erase, and an outstanding stability against read operations at technologically optimal bias and current levels.

Key multi(ferrocenyl) complexes in the interplay between electronic coupling and electrostatic interaction

In this review, the properties of the most significant examples of multi(ferrocenyl) cations containing a number of ferrocenyl units from two to six are discussed and the results are compared with the outcomes of some of our recent studies on conjugated ferrocenyl complexes.

Dynamic observation of phase transformation behaviors in indium(III) selenide nanowire based phase change memory

Phase change random access memory (PCRAM) has been extensively investigated for its potential applications in next-generation nonvolatile memory. In this study, indium(III) selenide (In2Se3) was selected due to its high resistivity ratio and lower programming current. Au/In2Se3-nanowire/Au phase change memory devices were fabricated and measured systematically in an in situ transmission electron microscope to perform a RESET/SET process under pulsed and dc voltage swept mode, respectively. During the switching, we observed the dynamic evolution of the phase transformation process. The switching behavior resulted from crystalline/amorphous change and revealed that a long pulse width would induce the amorphous or polycrystalline state by different pulse amplitudes, supporting the improvement of the writing speed, retention, and endurance of PCRAM.

Perovskite ferroelectric nanomaterials

In this review, the main concept of ferroelectricity of perovskite oxides and related materials at nanometer scale and existing difficulties in the synthesis of those nanocrystals are discussed. Important effects, such as depolarization field and size effect, on the existence of ferroelectricity in perovskite nanocrystals are deliberated. In the discussion of modeling works, different theoretical calculations are pinpointed focusing on their studies of lattice dynamics, phase transitions, new origin of ferroelectricity in nanostructures, etc. As the major part of this review, recent research progress in the facile synthesis, characterization and various applications of perovskite ferroelectric nanomaterials, such as BaTiO₃, PbTiO₃, PbZrO₃, and BiFeO₃, are also scrutinized. Perspectives concerning the future direction of ferroelectric nanomaterials research and its potential applications in renewable energy, etc., are presented. This review provides an overview in this area and guidance for further studies in perovskite ferroelectric nanomaterials and their applications.

Neuromorphic atomic switch networks

Efforts to emulate the formidable information processing capabilities of the brain through neuromorphic engineering have been bolstered by recent progress in the fabrication of nonlinear, nanoscale circuit elements that exhibit synapse-like operational characteristics. However, conventional fabrication techniques are unable to efficiently generate structures with the highly complex interconnectivity found in biological neuronal networks. Here we demonstrate the physical realization of a self-assembled neuromorphic device which implements basic concepts of systems neuroscience through a hardware-based platform comprised of over a billion interconnected atomic-switch inorganic synapses embedded in a complex network of silver nanowires. Observations of network activation and passive harmonic generation demonstrate a collective response to input stimulus in agreement with recent theoretical predictions. Further, emergent behaviors unique to the complex network of atomic switches and akin to brain function are observed, namely spatially distributed memory, recurrent dynamics and the activation of feedforward subnetworks. These devices display the functional characteristics required for implementing unconventional, biologically and neurally inspired computational methodologies in a synthetic experimental system.

Anatomy of a nanoscale conduction channel reveals the mechanism of a high-performance memristor

By employing a precise method for locating and directly imaging the active switching region in a resistive random access memory (RRAM) device, a nanoscale conducting channel consisting of an amorphous Ta(O) solid solution surrounded by nearly stoichiometric Ta(2) O(5) is observed. Structural and chemical analysis of the channel combined with temperature-dependent transport measurements indicate a unique resistance switching mechanism.

High-density magnetoresistive random access memory operating at ultralow voltage at room temperature

The main bottlenecks limiting the practical applications of current magnetoresistive random access memory (MRAM) technology are its low storage density and high writing energy consumption. Although a number of proposals have been reported for voltage-controlled memory device in recent years, none of them simultaneously satisfy the important device attributes: high storage capacity, low power consumption and room temperature operation. Here we present, using phase-field simulations, a simple and new pathway towards high-performance MRAMs that display significant improvements over existing MRAM technologies or proposed concepts. The proposed nanoscale MRAM device simultaneously exhibits ultrahigh storage capacity of up to 88 Gb inch⁻², ultralow power dissipation as low as 0.16 fJ per bit and room temperature high-speed operation below 10 ns.

Magnetoresistive random access memory offers significant promise as a next-generation memory technology. Nan and colleagues present a design concept for a device that simultaneously possesses ultrahigh storage capacity, ultralow power dissipation, and high-speed operation at room temperature.