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Li T, Bandari VK, Schmidt OG. Molecular Electronics: Creating and Bridging Molecular Junctions and Promoting Its Commercialization. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2209088. [PMID: 36512432 DOI: 10.1002/adma.202209088] [Citation(s) in RCA: 14] [Impact Index Per Article: 14.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/02/2022] [Revised: 11/28/2022] [Indexed: 06/02/2023]
Abstract
Molecular electronics is driven by the dream of expanding Moore's law to the molecular level for next-generation electronics through incorporating individual or ensemble molecules into electronic circuits. For nearly 50 years, numerous efforts have been made to explore the intrinsic properties of molecules and develop diverse fascinating molecular electronic devices with the desired functionalities. The flourishing of molecular electronics is inseparable from the development of various elegant methodologies for creating nanogap electrodes and bridging the nanogap with molecules. This review first focuses on the techniques for making lateral and vertical nanogap electrodes by breaking, narrowing, and fixed modes, and highlights their capabilities, applications, merits, and shortcomings. After summarizing the approaches of growing single molecules or molecular layers on the electrodes, the methods of constructing a complete molecular circuit are comprehensively grouped into three categories: 1) directly bridging one-molecule-electrode component with another electrode, 2) physically bridging two-molecule-electrode components, and 3) chemically bridging two-molecule-electrode components. Finally, the current state of molecular circuit integration and commercialization is discussed and perspectives are provided, hoping to encourage the community to accelerate the realization of fully scalable molecular electronics for a new era of integrated microsystems and applications.
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Affiliation(s)
- Tianming Li
- Research Center for Materials, Architectures and Integration of Nanomembranes (MAIN), Chemnitz University of Technology, 09126, Chemnitz, Germany
- Material Systems for Nanoelectronics, Chemnitz University of Technology, 09111, Chemnitz, Germany
| | - Vineeth Kumar Bandari
- Research Center for Materials, Architectures and Integration of Nanomembranes (MAIN), Chemnitz University of Technology, 09126, Chemnitz, Germany
- Material Systems for Nanoelectronics, Chemnitz University of Technology, 09111, Chemnitz, Germany
| | - Oliver G Schmidt
- Research Center for Materials, Architectures and Integration of Nanomembranes (MAIN), Chemnitz University of Technology, 09126, Chemnitz, Germany
- Material Systems for Nanoelectronics, Chemnitz University of Technology, 09111, Chemnitz, Germany
- Nanophysics, Dresden University of Technology, 01069, Dresden, Germany
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2
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Palajonnala Narasaiah B, Banoth P, Bustamante Dominguez AG, Mandal BK, Kumar CK, Barnes CHW, De Los Santos Valladares L, Kollu P. Biogenic Photo-Catalyst TiO 2 Nanoparticles for Remediation of Environment Pollutants. ACS OMEGA 2022; 7:26174-26189. [PMID: 35936468 PMCID: PMC9352162 DOI: 10.1021/acsomega.2c01763] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 03/26/2022] [Accepted: 07/07/2022] [Indexed: 06/15/2023]
Abstract
This article reports a benign environmentally friendly fabrication method of titanium dioxide (TDO) nanoparticles (named TDO NPs3, TDO NPs5, and TDO NPs8) using aqueous extract of durva herb waste. This synthesis process avoids use of harmful substances and persistent chemicals throughout the order and enables us to control the size of the nanomaterials. Characterization of TDO nanoparticles was analyzed by ultraviolet-visible spectroscopy, X-ray diffraction, and Fourier transform infrared spectroscopy. The morphological nature of the TDO samples was inspected by transmission electron microscopy, which indicated that the TDO NPs3, TDO NPs5, and TDO NPs8 were spherical in shape, with average sizes of 5.14, 12.54, and 29.61 nm, respectively. The stability of TDO nanoparticles was assessed using thermogravimetric analysis and dynamic light scattering analysis. These samples could be used for degradation of polluting industrial textile dyes, such as methylene blue (MB) and rhodamine B (Rh-B). Remarkably, the TDO NPs3 sample (5.14 nm size) exhibits a noticeable degradation of the MB dye in a shorter time period (50 min) than the TDO NPs8 sample with a size of 29.61 nm (120 min). The TDO NPs3 sample was also tested for degradation of Rh-B dye, showing high degradation efficiency over a short period of time (60 min). In contrast, the TDO NPs8 sample showed degradation of the Rh-B dye in 120 min. The effect of the dye concentration and the catalyst dose to remove dye pollutants has also been investigated. The synthesized TDO NPs act as exceptional catalysts for the degradation of dyes, and they are promising materials for the degradation of industrial polluting dyes.
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Affiliation(s)
- Boya Palajonnala Narasaiah
- CASEST,
School of Physics, University of Hyderabad, Prof. C. R Rao Road, Gachibowli, Hyderabad 500046, Telangana, India
- Laboratorio
de Cerámicos y Nanomateriales, Facultad de Ciencias Físicas, Universidad Nacional Mayor de San Marcos, Ap. Postal 14-0149, Lima 15081, Peru
| | - Pravallika Banoth
- School
of Physics, University of Hyderabad, Prof. C. R Rao Road, Gachibowli, Hyderabad 500046, Telangana, India
| | - Angel Guillermo Bustamante Dominguez
- Laboratorio
de Cerámicos y Nanomateriales, Facultad de Ciencias Físicas, Universidad Nacional Mayor de San Marcos, Ap. Postal 14-0149, Lima 15081, Peru
| | - Badal Kumar Mandal
- Department
of Chemistry, School of Advanced Sciences, Vellore Institute of Technology, Vellore 632014, Tamil
Nadu, India
| | - Challa Kiran Kumar
- Technology
Mission Division, Department of Science and Technology, Ministry of
Science and Technology, MoS&T, New Delhi 110030, India
| | - Crispin H. W. Barnes
- Cavendish
Laboratory, Department of Physics, University
of Cambridge, J.J. Thomson Avenue, Cambridge CB3 0HE 2, U.K.
| | - Luis De Los Santos Valladares
- Cavendish
Laboratory, Department of Physics, University
of Cambridge, J.J. Thomson Avenue, Cambridge CB3 0HE 2, U.K.
- School of
Materials Science and Engineering, Northeastern
University, No 11, Lane
3, Wenhua Road, Heping District, Shenyang, Liaoning 110819, People’s Republic of China
| | - Pratap Kollu
- CASEST,
School of Physics, University of Hyderabad, Prof. C. R Rao Road, Gachibowli, Hyderabad 500046, Telangana, India
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3
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Dvornichenko AV, Kharchenko VO, Kharchenko DO. Electromigration-induced formation of percolating adsorbate islands during condensation from the gaseous phase: a computational study. BEILSTEIN JOURNAL OF NANOTECHNOLOGY 2021; 12:694-703. [PMID: 34354898 PMCID: PMC8290097 DOI: 10.3762/bjnano.12.55] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 04/13/2021] [Accepted: 06/25/2021] [Indexed: 06/13/2023]
Abstract
We provide a computational study of a change in the morphology of a growing thin film during condensation caused by electromigration effects. It will be shown, that separated circular adsorbate islands, realized in an isotropic system, become elongated in the direction of the applied electrical field. We discuss the dependence of the critical value of the strength of the applied electrical field, responsible for the formation of percolating adsorbate islands, on main control parameters. This study provides insight into details of electromigration effects during the self-organization of adatoms into percolating adsorbate islands during condensation from the gaseous phase. We will show that the elongated morphology of adsorbate islands remains stable if the electric field is turned off.
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Affiliation(s)
| | - Vasyl O Kharchenko
- Institute of Applied Physics, National Academy of Sciences of Ukraine, 58 Petropavlivska St., 40000 Sumy, Ukraine
| | - Dmitrii O Kharchenko
- Institute of Applied Physics, National Academy of Sciences of Ukraine, 58 Petropavlivska St., 40000 Sumy, Ukraine
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4
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Banerjee A, Khan SUH, Broadbent S, Likhite R, Looper R, Kim H, Mastrangelo CH. Batch-Fabricated α-Si Assisted Nanogap Tunneling Junctions. NANOMATERIALS 2019; 9:nano9050727. [PMID: 31083457 PMCID: PMC6567118 DOI: 10.3390/nano9050727] [Citation(s) in RCA: 11] [Impact Index Per Article: 2.2] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 03/19/2019] [Revised: 05/02/2019] [Accepted: 05/07/2019] [Indexed: 11/17/2022]
Abstract
This paper details the design, fabrication, and characterization of highly uniform batch-fabricated sidewall etched vertical nanogap tunneling junctions for bio-sensing applications. The device consists of two vertically stacked gold electrodes separated by a partially etched sacrificial spacer layer of sputtered α-Si and Atomic Layer Deposited (ALD) SiO2. A ~10 nm wide air-gap is formed along the sidewall by a controlled dry etch of the spacer. The thickness of the spacer layer can be tuned by adjusting the number of ALD cycles. The rigorous statistical characterization of the ultra-thin spacer films has also been performed. We fabricated nanogap electrodes under two design layouts with different overlap areas and spacer gaps, from ~4.0 nm to ~9.0 nm. Optical measurements reported an average non-uniformity of 0.46 nm (~8%) and 0.56 nm (~30%) in SiO2 and α-Si film thickness respectively. Direct tunneling and Fowler–Nordheim tunneling measurements were done and the barrier potential of the spacer stack was determined to be ~3.5 eV. I–V measurements showed a maximum resistance of 46 × 103 GΩ and the average dielectric breakdown field of the spacer stack was experimentally determined to be ~11 MV/cm.
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Affiliation(s)
- Aishwaryadev Banerjee
- Department of Electrical and Computer Engineering, University of Utah, Salt Lake City, UT 84112, USA.
| | - Shakir-Ul Haque Khan
- Department of Electrical and Computer Engineering, University of Utah, Salt Lake City, UT 84112, USA.
| | - Samuel Broadbent
- Department of Chemistry, University of Utah, Salt Lake City, UT 84112, USA.
| | - Rugved Likhite
- Department of Electrical and Computer Engineering, University of Utah, Salt Lake City, UT 84112, USA.
| | - Ryan Looper
- Department of Chemistry, University of Utah, Salt Lake City, UT 84112, USA.
| | - Hanseup Kim
- Department of Electrical and Computer Engineering, University of Utah, Salt Lake City, UT 84112, USA.
| | - Carlos H Mastrangelo
- Department of Electrical and Computer Engineering, University of Utah, Salt Lake City, UT 84112, USA.
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5
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Yang Y, Gu C, Li J. Sub-5 nm Metal Nanogaps: Physical Properties, Fabrication Methods, and Device Applications. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2019; 15:e1804177. [PMID: 30589217 DOI: 10.1002/smll.201804177] [Citation(s) in RCA: 15] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/10/2018] [Revised: 11/29/2018] [Indexed: 05/26/2023]
Abstract
Sub-5 nm metal nanogaps have attracted widespread attention in physics, chemistry, material sciences, and biology due to their physical properties, including great plasmon-enhanced effects in light-matter interactions and charge tunneling, Coulomb blockade, and the Kondo effect under an electrical stimulus. These properties especially meet the needs of many cutting-edge devices, such as sensing, optical, molecular, and electronic devices. However, fabricating sub-5 nm nanogaps is still challenging at the present, and scaled and reliable fabrication, improved addressability, and multifunction integration are desired for further applications in commercial devices. The aim of this work is to provide a comprehensive overview of sub-5 nm nanogaps and to present recent advancements in metal nanogaps, including their physical properties, fabrication methods, and device applications, with the ultimate aim to further inspire scientists and engineers in their research.
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Affiliation(s)
- Yang Yang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, P. R. China
| | - Changzhi Gu
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, P. R. China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Junjie Li
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, P. R. China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong, 523808, China
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6
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Naitoh Y, Albrecht K, Wei Q, Yamamoto K, Shima H, Ishida T. Fabrication of sub-1 nm gap electrodes using metal-mask patterning and conductivity measurements of molecules in nanoscale spaces. RSC Adv 2017. [DOI: 10.1039/c7ra10873g] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022] Open
Abstract
Fabrications of sub-1 nm gap Au electrodes using a metal mask for patterning were achieved. Because the procedure does not involve wet processing, the ranges of possible electrode and substrate materials for the electrodes are greatly expanded.
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Affiliation(s)
- Yasuhisa Naitoh
- Nanoelectronics Research Institute
- Department of Electronics and Manufacturing
- National Institute of Advanced Industrial Science and Technology (AIST)
- Tsukuba
- Japan
| | - Ken Albrecht
- Laboratory for Chemistry and Life Science
- Tokyo Institute of Technology
- Yokohama 226-8503
- Japan
- JST
| | - Qingshuo Wei
- Nanomaterials Research Institute
- Department of Materials and Chemistry
- National Institute of Advanced Industrial Science and Technology (AIST)
- Tsukuba
- Japan
| | - Kimihisa Yamamoto
- Laboratory for Chemistry and Life Science
- Tokyo Institute of Technology
- Yokohama 226-8503
- Japan
- JST
| | - Hisashi Shima
- Nanoelectronics Research Institute
- Department of Electronics and Manufacturing
- National Institute of Advanced Industrial Science and Technology (AIST)
- Tsukuba
- Japan
| | - Takao Ishida
- Nanomaterials Research Institute
- Department of Materials and Chemistry
- National Institute of Advanced Industrial Science and Technology (AIST)
- Tsukuba
- Japan
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7
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Xiang D, Wang X, Jia C, Lee T, Guo X. Molecular-Scale Electronics: From Concept to Function. Chem Rev 2016; 116:4318-440. [DOI: 10.1021/acs.chemrev.5b00680] [Citation(s) in RCA: 816] [Impact Index Per Article: 102.0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/26/2023]
Affiliation(s)
- Dong Xiang
- Beijing
National Laboratory for Molecular Sciences, State Key Laboratory for
Structural Chemistry of Unstable and Stable Species, College of Chemistry
and Molecular Engineering, Peking University, Beijing 100871, China
- Key
Laboratory of Optical Information Science and Technology, Institute
of Modern Optics, College of Electronic Information and Optical Engineering, Nankai University, Tianjin 300071, China
| | - Xiaolong Wang
- Beijing
National Laboratory for Molecular Sciences, State Key Laboratory for
Structural Chemistry of Unstable and Stable Species, College of Chemistry
and Molecular Engineering, Peking University, Beijing 100871, China
| | - Chuancheng Jia
- Beijing
National Laboratory for Molecular Sciences, State Key Laboratory for
Structural Chemistry of Unstable and Stable Species, College of Chemistry
and Molecular Engineering, Peking University, Beijing 100871, China
| | - Takhee Lee
- Department
of Physics and Astronomy, and Institute of Applied Physics, Seoul National University, Seoul 08826, Korea
| | - Xuefeng Guo
- Beijing
National Laboratory for Molecular Sciences, State Key Laboratory for
Structural Chemistry of Unstable and Stable Species, College of Chemistry
and Molecular Engineering, Peking University, Beijing 100871, China
- Department
of Materials Science and Engineering, College of Engineering, Peking University, Beijing 100871, China
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8
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Cui A, Liu Z, Dong H, Wang Y, Zhen Y, Li W, Li J, Gu C, Hu W. Single grain boundary break junction for suspended nanogap electrodes with gapwidth down to 1-2 nm by focused ion beam milling. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2015; 27:3002-6. [PMID: 25854513 DOI: 10.1002/adma.201500527] [Citation(s) in RCA: 10] [Impact Index Per Article: 1.1] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/01/2015] [Revised: 03/17/2015] [Indexed: 05/21/2023]
Abstract
Single grain boundary junctions are used for the fabrication of suspended nanogap electrodes with a gapwidth down to 1-2 nm through the break of such junctions by focused ion beam (FIB) milling. With advantages of stability and no debris, such nanogap electrodes are suitable for single molecular electronic device construction.
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Affiliation(s)
- Ajuan Cui
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190, China
| | - Zhe Liu
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
| | - Huanli Dong
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190, China
| | - Yujin Wang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
| | - Yonggang Zhen
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190, China
| | - Wuxia Li
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
| | - Junjie Li
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
| | - Changzhi Gu
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
| | - Wenping Hu
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190, China
- Collaborative Innovation Center of Chemical Science and Engineering (Tianjin) & Department of Chemistry, School of Science, Tianjin University, Tianjin, 300072, China
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9
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Magnetization reversal and magnetic anisotropy in ordered CoNiP nanowire arrays: effects of wire diameter. SENSORS 2015; 15:5687-96. [PMID: 25760054 PMCID: PMC4435145 DOI: 10.3390/s150305687] [Citation(s) in RCA: 18] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 12/16/2014] [Revised: 01/15/2015] [Accepted: 03/03/2015] [Indexed: 11/30/2022]
Abstract
Ordered CoNiP nanowires with the same length of 4 µm and varying diameters (d = 100 nm–600 nm) were fabricated by electrodeposition of CoNiP onto polycarbonate templates. X-ray diffraction, scanning electron microscopy, and high-resolution transmission electron microscopy confirmed the quality of the fabricated nanowires. Magnetic measurements and theoretical analysis revealed that the magnetization reversal and magnetic anisotropy were significantly influenced by varying of the diameters of the nanowires. There existed a critical wire diameter (dc ≈ 276 nm), below which the magnetization reversal occurred via a coherent rotation mode, and above which the magnetization reversal occurred via a curling rotation mode. The easy axis of the magnetization tended to change in direction from parallel to perpendicular with respect to the wire axis as the wire diameter exceeded dc ≈ 276 nm. With increasing wire diameter, the coercive field (Hc) and the remanent to saturation magnetization ratio (Mr/Ms) were also found to rapidly decrease in the range d = 100–400 nm and gradually decrease for d > 400 nm.
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SHIIGI H, NAGAOKA T. Molecularly Bridged Gold Nanoparticle Array for Sensing Applications. ANAL SCI 2014; 30:89-96. [DOI: 10.2116/analsci.30.89] [Citation(s) in RCA: 17] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/23/2022]
Affiliation(s)
- Hiroshi SHIIGI
- Department of Applied Chemistry, Graduate School of Engineering, Osaka Prefecture University
| | - Tsutomu NAGAOKA
- Department of Applied Chemistry, Graduate School of Engineering, Osaka Prefecture University
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Karmakar S, Kumar S, Rinaldi R, Maruccio G. Nano-electronics and spintronics with nanoparticles. ACTA ACUST UNITED AC 2011. [DOI: 10.1088/1742-6596/292/1/012002] [Citation(s) in RCA: 30] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/11/2022]
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