Fast and direct measurements of the electrical properties of graphene using micro four-point probes

Mapping nanoscale carrier confinement in polycrystalline graphene by terahertz spectroscopy

Terahertz time-domain spectroscopy (THz-TDS) can be used to map spatial variations in electrical properties such as sheet conductivity, carrier density, and carrier mobility in graphene. Here, we consider wafer-scale graphene grown on germanium by chemical vapor deposition with non-uniformities and small domains due to reconstructions of the substrate during growth. The THz conductivity spectrum matches the predictions of the phenomenological Drude-Smith model for conductors with non-isotropic scattering caused by backscattering from boundaries and line defects. We compare the charge carrier mean free path determined by THz-TDS with the average defect distance assessed by Raman spectroscopy, and the grain boundary dimensions as determined by transmission electron microscopy. The results indicate that even small angle orientation variations below 5° within graphene grains influence the scattering behavior, consistent with significant backscattering contributions from grain boundaries.

Improving Electroactivity of N-Doped Graphene Derivatives with Electrical Induction Heating

Graphene derivatives doped with nitrogen have already been identified as active non-noble metal materials for oxygen reduction reaction (ORR) in PEM and alkaline fuel cells. However, an efficient and scalable method to prepare active, stable, and high-surface-area non-noble metal catalysts remains a challenge. Therefore, an efficient, potentially scalable strategy to improve the specific surface area of N-doped graphene derivatives needs to be developed. Here, we report a novel, rapid, and scalable electrical induction heating method for the preparation of N-doped heat-treated graphene oxide derivatives (N-htGOD) with a high specific surface area. The application of the induction heating method has been shown to shorten the reaction time and improve the energy efficiency of the process. The materials synthesized by induction heating exhibited very high specific surface area and showed improved ORR activity compared to the conventional synthesis method. Moreover, we demonstrated that the temperature program of induction heating could fine-tune the concentration of nitrogen functionalities. In particular, the graphitic-N configuration increases with increasing final temperature, in parallel with the increasing ORR activity. The presented results will contribute to the understanding and development of nonmetal N-htGOD for energy storage and conversion applications.

Automatic Micro-Robotic Identification and Electrical Characterization of Graphene

Micromechanically exfoliating graphene on S i / S i O 2 substrates is commonplace for graphene researchers, but locating actual graphene flakes on these substrates is a high-effort and tiresome task. The main purpose of this work was to establish a completely automated procedure to identify those graphene flakes with as little human interaction as possible, improving on the limitations of current methods. Furthermore, automatic electrical characterization of the identified flakes was performed. The proposed micro-robotic automation sequence consists of three main steps. To start, a sample surface plane is calculated, based on multiple foci points across the substrate. Secondly, flakes on the substrate are identified in the hue, saturation, and value (HSV) color space, with an implementation to fit the measurement probe, used to avoid undersized samples and adjust the flake orientation. Finally, electrical characterization is performed based on four point probe measurements with the Van der Pauw method. Results of the successfully implemented automation sequence are presented together with flake electrical properties and validation.

Electrical Homogeneity Mapping of Epitaxial Graphene on Silicon Carbide

Epitaxial graphene is a promising route to wafer-scale production of electronic graphene devices. Chemical vapor deposition of graphene on silicon carbide offers epitaxial growth with layer control but is subject to significant spatial and wafer-to-wafer variability. We use terahertz time-domain spectroscopy and micro four-point probes to analyze the spatial variations of quasi-freestanding bilayer graphene grown on 4 in. silicon carbide (SiC) wafers and find significant variations in electrical properties across large regions, which are even reproduced across graphene on different SiC wafers cut from the same ingot. The dc sheet conductivity of epitaxial graphene was found to vary more than 1 order of magnitude across a 4 in. SiC wafer. To determine the origin of the variations, we compare different optical and scanning probe microscopies with the electrical measurements from nano- to millimeter scale and identify three distinct qualities of graphene, which can be attributed to the microstructure of the SiC surface.

Graphene Dirac point tuned by ferroelectric polarization field

Graphene has received numerous attention for future nanoelectronics and optoelectronics. The Dirac point is a key parameter of graphene that provides information about its carrier properties. There are lots of methods to tune the Dirac point of graphene, such as chemical doping, impurities, defects, and disorder. In this study, we report a different approach to tune the Dirac point of graphene using a ferroelectric polarization field. The Dirac point can be adjusted to near the ferroelectric coercive voltage regardless its original position. We have ensured this phenomenon by temperature-dependent experiments, and analyzed its mechanism with the theory of impurity correlation in graphene. Additionally, with the modulation of ferroelectric polymer, the current on/off ratio and mobility of graphene transistor both have been improved. This work provides an effective method to tune the Dirac point of graphene, which can be readily used to configure functional devices such as p-n junctions and inverters.

Selective Dirac voltage engineering of individual graphene field-effect transistors for digital inverter and frequency multiplier integrations

The ambipolar band structure of graphene presents unique opportunities for novel electronic device applications. A cycle of gate voltage sweep in a conventional graphene transistor produces a frequency-doubled output current. To increase the frequency further, we used various graphene doping control techniques to produce Dirac voltage engineered graphene channels. The various surface treatments and substrate conditions produced differently doped graphene channels that were integrated on a single substrate and multiple Dirac voltages were observed by applying a single gate voltage sweep. We applied the Dirac voltage engineering techniques to graphene field-effect transistors on a single chip for the fabrication of a frequency multiplier and a logic inverter demonstrating analog and digital circuit application possibilities.

Electrically continuous graphene from single crystal copper verified by terahertz conductance spectroscopy and micro four-point probe

The electrical performance of graphene synthesized by chemical vapor deposition and transferred to insulating surfaces may be compromised by extended defects, including for instance grain boundaries, cracks, wrinkles, and tears. In this study, we experimentally investigate and compare the nano- and microscale electrical continuity of single layer graphene grown on centimeter-sized single crystal copper with that of previously studied graphene films, grown on commercially available copper foil, after transfer to SiO2 surfaces. The electrical continuity of the graphene films is analyzed using two noninvasive conductance characterization methods: ultrabroadband terahertz time-domain spectroscopy and micro four-point probe, which probe the electrical properties of the graphene film on different length scales, 100 nm and 10 μm, respectively. Ultrabroadband terahertz time-domain spectroscopy allows for measurement of the complex conductance response in the frequency range 1-15 terahertz, covering the entire intraband conductance spectrum, and reveals that the conductance response for the graphene grown on single crystalline copper intimately follows the Drude model for a barrier-free conductor. In contrast, the graphene grown on commercial copper foil shows a distinctly non-Drude conductance spectrum that is better described by the Drude-Smith model, which incorporates the effect of preferential carrier backscattering associated with extended, electronic barriers with a typical separation on the order of 100 nm. Micro four-point probe resistance values measured on graphene grown on single crystalline copper in two different voltage-current configurations show close agreement with the expected distributions for a continuous 2D conductor, in contrast with previous observations on graphene grown on commercial copper foil. The terahertz and micro four-point probe conductance values of the graphene grown on single crystalline copper shows a close to unity correlation, in contrast with those of the graphene grown on commercial copper foil, which we explain by the absence of extended defects on the microscale in CVD graphene grown on single crystalline copper. The presented results demonstrate that the graphene grown on single crystal copper is electrically continuous on the nanoscopic, microscopic, as well as intermediate length scales.

Extreme sensitivity of graphene photoconductivity to environmental gases

Graphene is a single layer of covalently bonded carbon atoms, which was discovered only 8 years ago and yet has already attracted intense research and commercial interest. Initial research focused on its remarkable electronic properties, such as the observation of massless Dirac fermions and the half-integer quantum Hall effect. Now graphene is finding application in touch-screen displays, as channels in high-frequency transistors and in graphene-based integrated circuits. The potential for using the unique properties of graphene in terahertz-frequency electronics is particularly exciting; however, initial experiments probing the terahertz-frequency response of graphene are only just emerging. Here we show that the photoconductivity of graphene at terahertz frequencies is dramatically altered by the adsorption of atmospheric gases, such as nitrogen and oxygen. Furthermore, we observe the signature of terahertz stimulated emission from gas-adsorbed graphene. Our findings highlight the importance of environmental conditions on the design and fabrication of high-speed, graphene-based devices.

Graphene is a single layer of carbon atoms whose high electron mobility offers potential for cheap, high-speed opto-electronic devices. Docherty et al. show that the terahertz frequency photoconductivity in graphene depends crucially on the type and density of environmental gas adsorbed.

Surface-sensitive conductivity measurement using a micro multi-point probe approach

An instrument for microscale electrical transport measurements in ultra-high vacuum is presented. The setup is constructed around collinear lithographically-created multi-point probes with a contact spacing down to 500 nm. Most commonly, twelve-point probes are used. These probes are approached to the surface via piezoelectric positioners. Standard four-point resistance measurements can be performed using any combination of contacts out of the twelve available. Current/voltage measurements are taken semi-automatically for a variety of the possible contact configurations, effectively emulating measurements with an equidistant four-point probe for a wide range of contact spacings. In this way, it is possible to distinguish between bulk-like and surface-like conduction. The paper describes the design of the instrument and the approach to data and error analysis. Application examples are given for epitaxial graphene on SiC and degenerately doped Bi₂Se₃.

Graphene conductance uniformity mapping

We demonstrate a combination of micro four-point probe (M4PP) and non-contact terahertz time-domain spectroscopy (THz-TDS) measurements for centimeter scale quantitative mapping of the sheet conductance of large area chemical vapor deposited graphene films. Dual configuration M4PP measurements, demonstrated on graphene for the first time, provide valuable statistical insight into the influence of microscale defects on the conductance, while THz-TDS has potential as a fast, non-contact metrology method for mapping of the spatially averaged nanoscopic conductance on wafer-scale graphene with scan times of less than a minute for a 4-in. wafer. The combination of M4PP and THz-TDS conductance measurements, supported by micro Raman spectroscopy and optical imaging, reveals that the film is electrically continuous on the nanoscopic scale with microscopic defects likely originating from the transfer process, dominating the microscale conductance of the investigated graphene film.

Near-field microwave scanning probe imaging of conductivity inhomogeneities in CVD graphene

We have performed near-field scanning microwave microscopy (SMM) of graphene grown by chemical vapor deposition. Due to the use of probe-sample capacitive coupling and a relatively high ac frequency of a few GHz, this scanning probe method allows mapping of local conductivity without a dedicated counter electrode, with a spatial resolution of about 50 nm. Here, the coupling was enabled by atomic layer deposition of alumina on top of graphene, which in turn enabled imaging both large-area films, as well as micron-sized islands, with a dynamic range covering a low sheet resistance of a metal film and a high resistance of highly disordered graphene. The structures of graphene grown on Ni films and Cu foils are explored, and the effects of growth conditions are elucidated. We present a simple general scheme for interpretation of the contrast in the SMM images of our graphene samples and other two-dimensional conductors, which is supported by extensive numerical finite-element modeling. We further demonstrate that combination of the SMM and numerical modeling allows quantitative information about the sheet resistance of graphene to be obtained, paving the pathway for characterization of graphene conductivity with a sub-100 nm special resolution.

Transfer-free electrical insulation of epitaxial graphene from its metal substrate

High-quality, large-area epitaxial graphene can be grown on metal surfaces, but its transport properties cannot be exploited because the electrical conduction is dominated by the substrate. Here we insulate epitaxial graphene on Ru(0001) by a stepwise intercalation of silicon and oxygen, and the eventual formation of a SiO(2) layer between the graphene and the metal. We follow the reaction steps by X-ray photoemission spectroscopy and demonstrate the electrical insulation using a nanoscale multipoint probe technique.