Lateral bending of tapered piezo-semiconductive nanostructures for ultra-sensitive mechanical force to voltage conversion

Novel Study of Strain-Induced Piezoelectricity in VO2

VO₂ is well known for its dual-phase transitions, electrical and structural, at a single temperature of 340 K. The low-temperature structural phases of VO₂ are different from their high-temperature counterpart in terms of structural symmetry. The strain-induced modification of the structural distortion in VO₂ is studied in detail. A ferroelectric-type distortion is observed, and therefore, the piezoelectric effect in the low-temperature phases of VO₂ is investigated, for the first time, by piezoresponse force microscopy. Strain is one of the factors that can modify the electronic behavior of piezoelectric materials. At the same time, the two low-temperature phases of VO₂ (M1 and M2) can only be separated by the application of strain. The piezoelectric coefficient in the strained phase of VO₂ was found to be 11-12 pm/V, making it eligible for piezotronic applications.

Impact of PN junction inhomogeneity on the piezoelectric fields of acoustic waves in piezo-semiconductive fibers

Non-uniform mechanical strain can be easily induced at the interface of a piezoelectric semiconductive (PS) PN junction with variable cross sections by using piezoactive acoustic waves, and thus produces a giant piezoelectric field to significantly enhance the piezotronic effect. For revealing the piezotronic performance modulation in the non-uniform PS PN junction, the electromechanical field under a pair of applied end mechanical forces is studied from perspectives of theoretical analysis and numerical simulations. A one-dimensional linearized model for the PS fiber is established, which is applied for the mechanical analysis of a selected profile with the cross section varying in a specific quadratic function. Numerical results indicate that the acoustoelectric fields in the space charge region of the non-uniform PS PN junction are more sensitive to the applied mechanical forces, compared with that of the uniform junction, especially for a heterogeneous PN junction. Furthermore, the current-voltage relations of a necking PS PN junction can be modulated more easily by the end mechanical forces. Both qualitative conclusions and quantitative results can offer guidance for the piezotronic device design.

Phase transformation and its effect on the piezopotential in a bent zinc oxide nanowire

Most piezotronic nanodevices rely on the piezopotential generated by the bending of their component piezoelectric nanowires (NWs). The mechanical behaviours and piezopotential properties of zinc oxide (ZnO) NWs under lateral bending are investigated in this paper by using a multiscale modelling technique combining first-principles calculations, molecular dynamics simulations and finite-element calculations. Two phase transformation processes are successively found in ZnO NWs by increasing the bending force. As a result, the inner and outer surfaces of bent ZnO NWs transform from the parent wurtzite (WZ) structure to a hexagonal (HX) structure and a body-centred-tetragonal (BCT-4) structure, respectively. Different material properties are found among the WZ, BCT-4, and HX structures, which result in a significant change in the piezopotential distribution in bent ZnO NWs after the phase transformation. Meanwhile, the piezopotential generated in bent ZnO NWs can be enhanced by an order of magnitude due to the phase transformation. Moreover, a significant increase in the electronic band gap is found in the transformed HX structure, which implies that the phase transformation may also affect the piezopotential in bent ZnO NWs by modifying their semiconducting properties especially when the doping level of NWs is large.

Fundamental Definitions for Axially-Strained Piezo-Semiconductive Nanostructures

Piezoelectric nanotransducers may offer key advantages in comparison with conventional piezoelectrics, including more choices for types of mechanical input, positions of the contacts, dimensionalities and shapes. However, since most piezoelectric nanostructures are also semiconductive, modeling becomes significantly more intricate and, therefore, the effects of free charges have been considered only in a few studies. Moreover, the available reports are complicated by the absence of proper nomenclature and figures of merit. Besides, some of the previous analyses are incomplete. For instance, the local piezopotential and free charges within axially strained conical piezo-semiconductive nanowires have only been systematically investigated for very low doping (10¹⁶ cm⁻³) and under compression. Here we give the definitions for the enhancement, depletion, base and tip piezopotentials, their characteristic lengths and both the tip-to-base and the depletion-to-enhancement piezopotential-ratios. As an example, we use these definitions for analyzing the local piezopotential and free charges in n-type ZnO truncated conical nanostructures with different doping levels (intrinsic, 10¹⁶ cm⁻³, 10¹⁷ cm⁻³) for both axial compression and traction. The definitions and concepts presented here may offer insight for designing high performance piezosemiconductive nanotransducers.

Seedless Hydrothermal Growth of ZnO Nanorods as a Promising Route for Flexible Tactile Sensors

Hydrothermal growth of ZnO nanorods has been widely used for the development of tactile sensors, with the aid of ZnO seed layers, favoring the growth of dense and vertically aligned nanorods. However, seed layers represent an additional fabrication step in the sensor design. In this study, a seedless hydrothermal growth of ZnO nanorods was carried out on Au-coated Si and polyimide substrates. The effects of both the Au morphology and the growth temperature on the characteristics of the nanorods were investigated, finding that smaller Au grains produced tilted rods, while larger grains provided vertical rods. Highly dense and high-aspect-ratio nanorods with hexagonal prismatic shape were obtained at 75 °C and 85 °C, while pyramid-like rods were grown when the temperature was set to 95 °C. Finite-element simulations demonstrated that prismatic rods produce higher voltage responses than the pyramid-shaped ones. A tactile sensor, with an active area of 1 cm², was fabricated on flexible polyimide substrate and embedding the nanorods forest in a polydimethylsiloxane matrix as a separation layer between the bottom and the top Au electrodes. The prototype showed clear responses upon applied loads of 2-4 N and vibrations over frequencies in the range of 20-800 Hz.

Nonlinear dynamic stability of piezoelectric thermoelastic electromechanical resonators

This research work deals with analyzing instability and nonlinear behaviors of piezoelectric thermal nano-bridges. An adjustable thermo-elastic model with the ability to control stability conditions is developed to examine the system behavior at different temperatures. To increase the performance range and improve system characteristics, a piezovoltage is applied and a spring is connected to the sliding end of the deformable beam as design parameters. The partial differential equations (PDEs) are derived using the extended Hamilton’s principle and Galerkin decomposition is implemented to discretize the nonlinear equations, which are solved via a computational method called the step-by-step linearization method (SSLM). To improve the accuracy of the solution, the number of mode shapes and the size of voltage increments are analyzed and sufficient values are employed in the solution. The validity of the formulation and solution method is verified with experimental, analytical, and numerical data for several cases. Finally, the vibration and eigenvalue problem of the actuated nano-manipulator subjected to electrostatic and Casimir attractions are investigated. It is concluded that the fringing-fields correction changes the system frequency, static equilibrium, and pull-in characteristics significantly. The results are expected to be instrumental in the analysis, design, and operation of numerous adjustable advanced nano-systems.

Electric Current Dependent Fracture in GaN Piezoelectric Semiconductor Ceramics

In this paper, the fracture behavior of GaN piezoelectric semiconductor ceramics was investigated under combined mechanical and electric loading by using three-point bending tests and numerical analysis. The experimental results demonstrate that, in contrast to traditional insulating piezoelectric ceramics, electric current is a key factor in affecting the fracture characteristics of GaN ceramics. The stress, electric displacement, and electric current intensity factors were numerically calculated and then a set of empirical formulae was obtained. By fitting the experimental data, a fracture criterion under combined mechanical and electrical loading was obtained in the form of an ellipsoid function of intensity factors. Such a fracture criterion can be extended to predict the failure behavior of other piezoelectric semiconductors or devices with a crack, which are useful in their reliability design and applications.

A flexible field-limited ordered ZnO nanorod-based self-powered tactile sensor array for electronic skin

A tactile sensor is an essential component for realizing biomimetic robots, while the flexibility of the tactile sensor is a pivotal feature for its application, especially for electronic skin. In this work, a flexible self-powered tactile sensor array was designed based on the piezoelectricity of ZnO nanorods (NRs). The field-limited ordered ZnO NRs were synthesized on a flexible Kapton substrate to serve as the functional layer of the tactile sensor. The electrical output performances of the as-fabricated tactile sensor were measured under pressing and bending forces. Moreover, we measured the human-finger pressure detection performance of the tactile sensor array, suggesting that the corresponding mapping figure of finger pressure could be displayed on the monitor of a personal computer (PC) in the form of lighted LED and color density through a LabVIEW system. This as-grown sensory feedback system should be of potential valuable assistance for the users of hand prostheses to reduce the risk and obtain a greater feeling of using the prostheses.

Thermal-electric model for piezoelectric ZnO nanowires

The behavior of ZnO nanowires under uniaxial loading is characterized by means of a numerical model that accounts for all coupled mechanical, electrical, and thermal effects. The paper shows that thermal effects in the nanowires may greatly impact the predicted performance of piezoelectric and piezotronic nanodevices. The pyroelectric effect introduces new equivalent volumic charge in the body of the nanowire and surface charges at the boundaries, where Kapitza resistances are located, that act together with the piezoelectric charges to improve the predicted performance. It is shown that the proposed model is able to reproduce several effects experimentally observed by other research groups, and is a promising tool for the design of ultra-high efficient nanodevices.

Piezoelectric effect of 3-D ZnO nanotetrapods

ZnO nanotetrapods could be designed as multiterminal strain sensors for enhancing sensitivity and directivity.

Design Concepts, Fabrication and Advanced Characterization Methods of Innovative Piezoelectric Sensors Based on ZnO Nanowires

Micro- and nano-scale materials and systems based on zinc oxide are expected to explode in their applications in the electronics and photonics, including nano-arrays of addressable optoelectronic devices and sensors, due to their outstanding properties, including semiconductivity and the presence of a direct bandgap, piezoelectricity, pyroelectricity and biocompatibility. Most applications are based on the cooperative and average response of a large number of ZnO micro/nanostructures. However, in order to assess the quality of the materials and their performance, it is fundamental to characterize and then accurately model the specific electrical and piezoelectric properties of single ZnO structures. In this paper, we report on focused ion beam machined high aspect ratio nanowires and their mechanical and electrical (by means of conductive atomic force microscopy) characterization. Then, we investigate the suitability of new power-law design concepts to accurately model the relevant electrical and mechanical size-effects, whose existence has been emphasized in recent reviews.

GaN wire-based Langmuir-Blodgett films for self-powered flexible strain sensors

We report a highly flexible strain sensor which exploits the piezoelectric properties of ultra-long gallium nitride (GaN) wires. Langmuir-Blodgett assembled wires are encapsulated in a dielectric material (parylene-C), which is sandwiched between two planar electrodes in a capacitor-like configuration. Through FEM simulations we show that encapsulating densely aligned conical wires in a properly designed dielectric layer can maximize the amplitude of the generated piezoelectric output potential. According to these considerations we designed and fabricated macroscopic flexible strain sensors (active area: 1.5 cm(2)). The sensor was actuated in three point configuration inducing curvature radii of less than 10 cm and has a typical force sensitivity of 30 mV N(-1).

The clash of mechanical and electrical size-effects in ZnO nanowires and a double power law approach to elastic strain engineering of piezoelectric and piezotronic devices

The piezoelectric performance of ultra-strength ZnO nanowires (NWs) depends on the subtle interplay between electrical and mechanical size-effects. "Size-dependent" modeling of compressed NWs illustrates why experimentally observed mechanical stiffening can indeed collide with electrical size-effects when the size shrinks, thereby lowering the actual piezoelectric function from bulk estimates. "Smaller" is not necessarily "better" in nanotechnology.