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Kang Y, Lin F, Tang J, Dai Q, Hou X, Meng B, Wang D, Wang L, Wei Z. Controlling the morphology and wavelength of self-assembled coaxial GaAs/Ga(As)Sb/GaAs single quantum-well nanowires. Phys Chem Chem Phys 2023; 25:1248-1256. [PMID: 36530045 DOI: 10.1039/d2cp04630j] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/23/2022]
Abstract
Antimonide-based ternary III-V nanowires (NWs) provide a tunable bandgap over a wide range, and the GaAsSb material system has prospective applications in the 1.3-1.55 μm spectral range of optical communications. In this paper, GaAs/Ga(As)Sb/GaAs single quantum well (SQW) NWs were grown on Si(111) substrates by molecular beam epitaxy (MBE). In addition, the morphologies and tunable wavelengths of the GaAs/Ga(As)Sb/GaAs SQWs were adjusted by interrupting the Ga droplets and changing the growth temperatures and V/III ratios. The four morphologies of the GaAs/Ga(As)Sb/GaAs SQW NWs were observed by scanning electron microscopy (SEM). The microscale lattice structure related to the incorporation of Sb in GaAs/Ga(As)Sb/GaAs SQWs was studied by Raman spectroscopy. The crystal quality of the GaAs/Ga(As)Sb/GaAs SQW NWs was researched by X-ray diffraction (XRD) and transmission electron microscopy (TEM). In addition, the optical properties of the GaAs/Ga(As)Sb/GaAs SQWs were investigated by photoluminescence (PL) spectroscopy. The PL spectra showed the peak emission wavelength range of ∼818 nm (GaAs) to ∼1628 nm (GaSb) at 10 K. This study provides an approach to enhance the effective control of the morphology, structure and wavelength of quantum well or core-shell NWs.
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Affiliation(s)
- Yubin Kang
- College of Optics and Electronic Science and Technology, China Jiliang University, Hangzhou, 310018, P. R. China. .,State Key Laboratory of High Power Semiconductor Lasers, Changchun University of Science and Technology, Changchun, 130022, P. R. China.
| | - Fengyuan Lin
- State Key Laboratory of High Power Semiconductor Lasers, Changchun University of Science and Technology, Changchun, 130022, P. R. China.
| | - Jilong Tang
- State Key Laboratory of High Power Semiconductor Lasers, Changchun University of Science and Technology, Changchun, 130022, P. R. China. .,Semiconductor Laser and Application Laboratory, Zhongshan Institute of Changchun University of Science and Technology, Zhongshan, 528437, P. R. China
| | - Qian Dai
- Southwest Institute of Technical Physics, Chengdu, 610041, P. R. China
| | - Xiaobing Hou
- State Key Laboratory of High Power Semiconductor Lasers, Changchun University of Science and Technology, Changchun, 130022, P. R. China.
| | - Bingheng Meng
- State Key Laboratory of High Power Semiconductor Lasers, Changchun University of Science and Technology, Changchun, 130022, P. R. China.
| | - Dongyue Wang
- State Key Laboratory of High Power Semiconductor Lasers, Changchun University of Science and Technology, Changchun, 130022, P. R. China.
| | - Le Wang
- College of Optics and Electronic Science and Technology, China Jiliang University, Hangzhou, 310018, P. R. China.
| | - Zhipeng Wei
- State Key Laboratory of High Power Semiconductor Lasers, Changchun University of Science and Technology, Changchun, 130022, P. R. China.
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2
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Parakh M, Pokharel R, Dawkins K, Devkota S, Li J, Iyer S. Ensemble GaAsSb/GaAs axial configured nanowire-based separate absorption, charge, and multiplication avalanche near-infrared photodetectors. NANOSCALE ADVANCES 2022; 4:3919-3927. [PMID: 36133330 PMCID: PMC9470064 DOI: 10.1039/d2na00359g] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 06/07/2022] [Accepted: 08/10/2022] [Indexed: 06/16/2023]
Abstract
In this study, molecular beam epitaxially grown axially configured ensemble GaAsSb/GaAs separate absorption, charge, and multiplication (SACM) region-based nanowire avalanche photodetector device on non-patterned Si substrate is presented. Our device exhibits a low breakdown voltage (V BR) of ∼ -10 ± 2.5 V under dark, photocurrent gain (M) varying from 20 in linear mode to avalanche gain of 700 at V BR at a 1.064 μm wavelength. Positive temperature dependence of breakdown voltage ∼ 12.6 mV K-1 further affirms avalanche breakdown as the gain mechanism in our SACM NW APDs. Capacitance-voltage (C-V) and temperature-dependent noise characteristics also validated punch-through voltage ascertained from I-V measurements, and avalanche being the dominant gain mechanism in the APDs. The ensemble SACM NW APD device demonstrated a broad spectral room temperature response with a cut-off wavelength of ∼1.2 μm with a responsivity of ∼0.17-0.38 A W-1 at -3 V. This work offers a potential pathway toward realizing tunable nanowire-based avalanche photodetectors compatible with traditional Si technology.
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Affiliation(s)
- M Parakh
- Department of Nanoengineering, Joint School of Nanoscience and Nanoengineering, North Carolina A&T State University Greensboro North Carolina 27411 USA
| | - R Pokharel
- Department of Nanoengineering, Joint School of Nanoscience and Nanoengineering, North Carolina A&T State University Greensboro North Carolina 27411 USA
| | - K Dawkins
- Department of Nanoengineering, Joint School of Nanoscience and Nanoengineering, North Carolina A&T State University Greensboro North Carolina 27411 USA
| | - S Devkota
- Department of Nanoengineering, Joint School of Nanoscience and Nanoengineering, North Carolina A&T State University Greensboro North Carolina 27411 USA
| | - J Li
- Department of Nanoengineering, Joint School of Nanoscience and Nanoengineering, North Carolina A&T State University Greensboro North Carolina 27411 USA
| | - S Iyer
- Department of Nanoengineering, Joint School of Nanoscience and Nanoengineering, North Carolina A&T State University Greensboro North Carolina 27411 USA
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3
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Devkota S, Parakh M, Johnson S, Ramaswamy P, Lowe M, Penn A, Reynolds L, Iyer S. A study of n-doping in self-catalyzed GaAsSb nanowires using GaTe dopant source and ensemble nanowire near-infrared photodetector. NANOTECHNOLOGY 2020; 31:505203. [PMID: 33021209 DOI: 10.1088/1361-6528/abb506] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
This work reports a comprehensive investigation of the effect of gallium telluride (GaTe) cell temperature variation (TGaTe) on the morphological, optical, and electrical properties of doped-GaAsSb nanowires (NWs) grown by Ga-assisted molecular beam epitaxy (MBE). These studies led to an optimum doping temperature of 550 °C for the growth of tellurium (Te)-doped GaAsSb NWs with the best optoelectronic and structural properties. Te incorporation resulted in a decrease in the aspect ratio of the NWs causing an increase in the Raman longitudinal optical/transverse optical vibrational mode intensity ratio, large photoluminescence emission with an exponential decay tail on the high energy side, promoting tunnel-assisted current conduction in ensemble NWs and significant photocurrent enhancement in the single nanowire. A Schottky barrier photodetector (PD) using Te-doped ensemble NWs with broad spectral range and a longer wavelength cutoff at ∼1.2 µm was demonstrated. These PDs exhibited responsivity in the range of 580-620 A W-1 and detectivity of 1.2-3.8 × 1012 Jones. The doped GaAsSb NWs have the potential for further improvement, paving the path for high-performance near-infrared (NIR) photodetection applications.
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Affiliation(s)
- Shisir Devkota
- Nanoengineering, Joint School of Nanoscience and Nanoengineering, North Carolina A&T State University, Greensboro, NC 27401, United States of America
| | - Mehul Parakh
- Nanoengineering, Joint School of Nanoscience and Nanoengineering, North Carolina A&T State University, Greensboro, NC 27401, United States of America
| | - Sean Johnson
- Department of Electrical and Computer Engineering, North Carolina A&T State University, Greensboro, NC 27411, United States of America
| | - Priyanka Ramaswamy
- Department of Electrical and Computer Engineering, North Carolina A&T State University, Greensboro, NC 27411, United States of America
| | - Michael Lowe
- Department of Electrical and Computer Engineering, North Carolina A&T State University, Greensboro, NC 27411, United States of America
| | - Aubrey Penn
- Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695, United States of America
- Analytical Instrumentation Facility, North Carolina State University, Raleigh, NC 27695, United States of America
| | - Lew Reynolds
- Analytical Instrumentation Facility, North Carolina State University, Raleigh, NC 27695, United States of America
| | - Shanthi Iyer
- Nanoengineering, Joint School of Nanoscience and Nanoengineering, North Carolina A&T State University, Greensboro, NC 27401, United States of America
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4
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Koivusalo E, Hilska J, Galeti HVA, Galvão Gobato Y, Guina M, Hakkarainen T. The role of As species in self-catalyzed growth of GaAs and GaAsSb nanowires. NANOTECHNOLOGY 2020; 31:465601. [PMID: 32750687 DOI: 10.1088/1361-6528/abac34] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Precise control and broad tunability of the growth parameters are essential in engineering the optical and electrical properties of semiconductor nanowires (NWs) to make them suitable for practical applications. To this end, we report the effect of As species, namely As2 and As4, on the growth of self-catalyzed GaAs based NWs. The role of As species is further studied in the presence of Te as n-type dopant in GaAs NWs and Sb as an additional group V element to form GaAsSb NWs. Using As4 enhances the growth of NWs in the axial direction over a wide range of growth parameters and diminishes the tendency of Te and Sb to reduce the NW aspect ratio. By extending the axial growth parameter window, As4 allows growth of GaAsSb NWs with up to 47% in Sb composition. On the other hand, As2 favors sidewall growth which enhances the growth in the radial direction. Thus, the selection of As species is critical for tuning not only the NW dimensions, but also the incorporation mechanisms of dopants and ternary elements. Moreover, the commonly observed dependence of twinning on Te and Sb remains unaffected by the As species. By exploiting the extended growth window associated with the use of As4, enhanced Sb incorporation and optical emission up to 1400 nm wavelength range is demonstrated. This wavelength corresponds to the telecom E-band, which opens new prospects for this NW material system in future telecom applications while simultaneously enabling their integration to the silicon photonics platform.
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Affiliation(s)
- Eero Koivusalo
- Optoelectronics Research Centre, Physics Unit, Tampere University, Tampere, Finland
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Recent Progress on the Gold-Free Integration of Ternary III-As Antimonide Nanowires Directly on Silicon. NANOMATERIALS 2020; 10:nano10102064. [PMID: 33086569 PMCID: PMC7603276 DOI: 10.3390/nano10102064] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 08/27/2020] [Revised: 09/26/2020] [Accepted: 09/27/2020] [Indexed: 01/11/2023]
Abstract
During the last few years, there has been renewed interest in the monolithic integration of gold-free, Ternary III–As Antimonide (III–As–Sb) compound semiconductor materials on complementary metal-oxide-semiconductor (CMOS)—compatible silicon substrate to exploit its scalability, and relative abundance in high-performance and cost-effective integrated circuits based on the well-established technology. Ternary III–As–Sb nanowires (NWs) hold enormous promise for the fabrication of high-performance optoelectronic nanodevices with tunable bandgap. However, the direct epitaxial growth of gold-free ternary III–As–Sb NWs on silicon is extremely challenging, due to the surfactant effect of Sb. This review highlights the recent progress towards the monolithic integration of III–As–Sb NWs on Si. First, a comprehensive and in-depth review of recent progress made in the gold-free growth of III–As–Sb NWs directly on Si is explicated, followed by a detailed description of the root cause of Sb surfactant effect and its influence on the morphology and structural properties of Au-free ternary III–As–Sb NWs. Then, the various strategies that have been successfully deployed for mitigating the Sb surfactant effect for enhanced Sb incorporation are highlighted. Finally, recent advances made in the development of CMOS compatible, Ternary III–As–Sb NWs based, high-performance optoelectronic devices are elucidated.
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Corrêa GB, Kumar S, Paschoal W, Devi C, Jacobsson D, Johannes A, Ronning C, Pettersson H, Paraguassu W. Raman characterization of single-crystalline Ga 0.96Mn 0.04As:Zn nanowires realized by ion-implantation. NANOTECHNOLOGY 2019; 30:335202. [PMID: 31018190 DOI: 10.1088/1361-6528/ab1bea] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
Recent progress in the realization of magnetic GaAs nanowires (NWs) doped with Mn has attracted a lot of attention due to their potential application in spintronics. In this work, we present a detailed Raman investigation of the structural properties of Zn doped GaAs (GaAs:Zn) and Mn-implanted GaAs:Zn (Ga0.96Mn0.04As:Zn) NWs. A significant broadening and redshift of the optical TO and LO phonon modes are observed for these NWs compared to as-grown undoped wires, which is attributed to strain induced by the Zn/Mn doping and to the presence of implantation-related defects. Moreover, the LO phonon modes are strongly damped, which is interpreted in terms of a strong LO phonon-plasmon coupling, induced by the free hole concentration. Moreover, we report on two new interesting Raman phonon modes (191 and 252 cm-1) observed in Mn ion-implanted NWs, which we attribute to Eg (TO) and A1g (LO) vibrational modes in a sheet layer of crystalline arsenic present on the surface of the NWs. This conclusion is supported by fitting the observed Raman shifts for the SO phonon modes to a theoretical dispersion function for a GaAs NW capped with a dielectric shell.
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Affiliation(s)
- Gregório B Corrêa
- Instituto Federal de Educação, Ciência e Tecnologia do Pará, 68440-000 Abaetetuba, PA, Brazil. Programa de Pós-Graduação em Física, Universidade Federal do Pará, 66075-110 Belém, PA, Brazil
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7
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Ren D, Ahtapodov L, van Helvoort ATJ, Weman H, Fimland BO. Epitaxially grown III-arsenide-antimonide nanowires for optoelectronic applications. NANOTECHNOLOGY 2019; 30:294001. [PMID: 30917343 DOI: 10.1088/1361-6528/ab13ed] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
Epitaxially grown ternary III-arsenide-antimonide (III-As-Sb) nanowires (NWs) are increasingly attracting attention due to their feasibility as a platform for the integration of largely lattice-mismatched antimonide-based heterostructures while preserving the high crystal quality. This and the inherent bandgap tuning flexibility of III-As-Sb in the near- and mid-infrared wavelength regions are important and auspicious premises for a variety of optoelectronic applications. In this review, we summarize the current understanding of the nucleation, morphology-change and crystal phase evolution of GaAsSb and InAsSb NWs and their characterization, especially in relation to Sb incorporation during growth. By linking these findings to the optical properties in such ternary NWs and their heterostructures, a brief account of the ongoing development of III-As-Sb NW-based photodetectors and light emitters is also given.
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Affiliation(s)
- Dingding Ren
- Department of Electronic Systems, Norwegian University of Science and Technology (NTNU), NO-7491 Trondheim, Norway
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8
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Yip S, Shen L, Ho JC. Recent advances in III-Sb nanowires: from synthesis to applications. NANOTECHNOLOGY 2019; 30:202003. [PMID: 30625448 DOI: 10.1088/1361-6528/aafcce] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/28/2023]
Abstract
The excellent properties of III-V semiconductors make them intriguing candidates for next-generation electronics and optoelectronics. Their nanowire (NW) counterparts further provide interesting geometry and a quantum confinement effect which benefits various applications. Among the many members of all the III-V semiconductors, III-antimonide NWs have attracted significant research interest due to their narrow, direct bandgap and high carrier mobility. However, due to the difficulty of NW fabrication, the development of III-antimonide NWs and their corresponding applications are always a step behind the other III-V semiconductors. Until recent years, because of advances in understanding and fabrication techniques, electronic and optoelectronic devices based on III-antimonide NWs with novel performance have been fabricated. In this review, we will focus on the development of the synthesis of III-antimonide NWs using different techniques and strategies for fine-tuning the crystal structure and composition as well as fabricating their corresponding heterostructures. With such development, the recent progress in the applications of III-antimonide NWs in electronics and optoelectronics is also surveyed. All these discussions provide valuable guidelines for the design of III-antimonide NWs for next-generation device utilization.
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Affiliation(s)
- SenPo Yip
- Department of Materials Science and Engineering, City University of Hong Kong, Hong Kong Special Administrative Region of China, People's Republic of China. Shenzhen Research Institute, City University of Hong Kong, Shenzhen 518057, People's Republic of China
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9
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Zhang J, Tang J, Kang Y, Lin F, Fang D, Wang D, Fang X, Wang X, Wei Z. Structural and spectroscopy characterization of coaxial GaAs/GaAsSb/GaAs single quantum well nanowires fabricated by molecular beam epitaxy. CrystEngComm 2019. [DOI: 10.1039/c9ce00660e] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
Through the growth and characterization of GaAs/GaAs0.75Sb0.25/GaAs SQW nanowires, an emission wavelength of about 1.2 μm is achieved.
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Affiliation(s)
- Jian Zhang
- State Key Laboratory of High Power Semiconductor Lasers
- Changchun University of Science and Technology
- Changchun 130022
- China
| | - Jilong Tang
- State Key Laboratory of High Power Semiconductor Lasers
- Changchun University of Science and Technology
- Changchun 130022
- China
| | - Yubin Kang
- State Key Laboratory of High Power Semiconductor Lasers
- Changchun University of Science and Technology
- Changchun 130022
- China
| | - Fengyuan Lin
- State Key Laboratory of High Power Semiconductor Lasers
- Changchun University of Science and Technology
- Changchun 130022
- China
| | - Dan Fang
- State Key Laboratory of High Power Semiconductor Lasers
- Changchun University of Science and Technology
- Changchun 130022
- China
| | - Dengkui Wang
- State Key Laboratory of High Power Semiconductor Lasers
- Changchun University of Science and Technology
- Changchun 130022
- China
| | - Xuan Fang
- State Key Laboratory of High Power Semiconductor Lasers
- Changchun University of Science and Technology
- Changchun 130022
- China
| | - Xiaohua Wang
- State Key Laboratory of High Power Semiconductor Lasers
- Changchun University of Science and Technology
- Changchun 130022
- China
| | - Zhipeng Wei
- State Key Laboratory of High Power Semiconductor Lasers
- Changchun University of Science and Technology
- Changchun 130022
- China
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10
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Brief Review of Epitaxy and Emission Properties of GaSb and Related Semiconductors. CRYSTALS 2017. [DOI: 10.3390/cryst7110337] [Citation(s) in RCA: 6] [Impact Index Per Article: 0.9] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/28/2023]
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11
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Ahmad E, Karim MR, Hafiz SB, Reynolds CL, Liu Y, Iyer S. A Two-Step Growth Pathway for High Sb Incorporation in GaAsSb Nanowires in the Telecommunication Wavelength Range. Sci Rep 2017; 7:10111. [PMID: 28860507 PMCID: PMC5579295 DOI: 10.1038/s41598-017-09280-4] [Citation(s) in RCA: 28] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/06/2017] [Accepted: 07/18/2017] [Indexed: 11/28/2022] Open
Abstract
Self-catalyzed growth of axial GaAs1−xSbx nanowire (NW) arrays with bandgap tuning corresponding to the telecommunication wavelength of 1.3 µm poses a challenge, as the growth mechanism for axial configuration is primarily thermodynamically driven by the vapor-liquid-solid growth process. A systematic study carried out on the effects of group V/III beam equivalent (BEP) ratios and substrate temperature (Tsub) on the chemical composition in NWs and NW density revealed the efficacy of a two-step growth temperature sequence (initiating the growth at relatively higher Tsub = 620 °C and then continuing the growth at lower Tsub) as a promising approach for obtaining high-density NWs at higher Sb compositions. The dependence of the Sb composition in the NWs on the growth parameters investigated has been explained by an analytical relationship between the effective vapor composition and NW composition using relevant kinetic parameters. A two-step growth approach along with a gradual variation in Ga-BEP for offsetting the consumption of the droplets has been explored to realize long NWs with homogeneous Sb composition up to 34 at.% and photoluminescence emission reaching 1.3 µm at room temperature.
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Affiliation(s)
- Estiak Ahmad
- Joint School of Nanoscience and Nanoengineering, North Carolina A&T State University, Greensboro, NC, 27401, USA
| | - Md Rezaul Karim
- Joint School of Nanoscience and Nanoengineering, North Carolina A&T State University, Greensboro, NC, 27401, USA
| | - Shihab Bin Hafiz
- Joint School of Nanoscience and Nanoengineering, North Carolina A&T State University, Greensboro, NC, 27401, USA
| | - C Lewis Reynolds
- Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC, 27695, USA
| | - Yang Liu
- Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC, 27695, USA
| | - Shanthi Iyer
- Joint School of Nanoscience and Nanoengineering, North Carolina A&T State University, Greensboro, NC, 27401, USA. .,Department of Electrical and Computer Engineering, North Carolina A&T State University, Greensboro, NC, 27411, USA.
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12
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Li L, Pan D, Xue Y, Wang X, Lin M, Su D, Zhang Q, Yu X, So H, Wei D, Sun B, Tan P, Pan A, Zhao J. Near Full-Composition-Range High-Quality GaAs 1-xSb x Nanowires Grown by Molecular-Beam Epitaxy. NANO LETTERS 2017; 17:622-630. [PMID: 28103038 DOI: 10.1021/acs.nanolett.6b03326] [Citation(s) in RCA: 14] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/06/2023]
Abstract
Here we report on the Ga self-catalyzed growth of near full-composition-range energy-gap-tunable GaAs1-xSbx nanowires by molecular-beam epitaxy. GaAs1-xSbx nanowires with different Sb content are systematically grown by tuning the Sb and As fluxes, and the As background. We find that GaAs1-xSbx nanowires with low Sb content can be grown directly on Si(111) substrates (0 ≤ x ≤ 0.60) and GaAs nanowire stems (0 ≤ x ≤ 0.50) by tuning the Sb and As fluxes. To obtain GaAs1-xSbx nanowires with x ranging from 0.60 to 0.93, we grow the GaAs1-xSbx nanowires on GaAs nanowire stems by tuning the As background. Photoluminescence measurements confirm that the emission wavelength of the GaAs1-xSbx nanowires is tunable from 844 nm (GaAs) to 1760 nm (GaAs0.07Sb0.93). High-resolution transmission electron microscopy images show that the grown GaAs1-xSbx nanowires have pure zinc-blende crystal structure. Room-temperature Raman spectra reveal a redshift of the optical phonons in the GaAs1-xSbx nanowires with x increasing from 0 to 0.93. Field-effect transistors based on individual GaAs1-xSbx nanowires are fabricated, and rectifying behavior is observed in devices with low Sb content, which disappears in devices with high Sb content. The successful growth of high-quality GaAs1-xSbx nanowires with near full-range bandgap tuning may speed up the development of high-performance nanowire devices based on such ternaries.
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Affiliation(s)
- Lixia Li
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences , P.O. Box 912, Beijing 100083, China
| | - Dong Pan
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences , P.O. Box 912, Beijing 100083, China
| | - Yongzhou Xue
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences , P.O. Box 912, Beijing 100083, China
| | - Xiaolei Wang
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences , P.O. Box 912, Beijing 100083, China
| | - Miaoling Lin
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences , P.O. Box 912, Beijing 100083, China
| | - Dan Su
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences , P.O. Box 912, Beijing 100083, China
| | - Qinglin Zhang
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, School of Physics and Microelectronic Science, and State Key Laboratory of Chemo/Biosensing and Chemometrics, Hunan University , Changsha 410082, China
| | - Xuezhe Yu
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences , P.O. Box 912, Beijing 100083, China
| | - Hyok So
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences , P.O. Box 912, Beijing 100083, China
| | - Dahai Wei
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences , P.O. Box 912, Beijing 100083, China
| | - Baoquan Sun
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences , P.O. Box 912, Beijing 100083, China
| | - Pingheng Tan
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences , P.O. Box 912, Beijing 100083, China
| | - Anlian Pan
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, School of Physics and Microelectronic Science, and State Key Laboratory of Chemo/Biosensing and Chemometrics, Hunan University , Changsha 410082, China
| | - Jianhua Zhao
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences , P.O. Box 912, Beijing 100083, China
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13
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Potts H, Friedl M, Amaduzzi F, Tang K, Tütüncüoglu G, Matteini F, Alarcon Lladó E, McIntyre PC, Fontcuberta i Morral A. From Twinning to Pure Zincblende Catalyst-Free InAs(Sb) Nanowires. NANO LETTERS 2016; 16:637-643. [PMID: 26686394 DOI: 10.1021/acs.nanolett.5b04367] [Citation(s) in RCA: 6] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/05/2023]
Abstract
III-V nanowires are candidate building blocks for next generation electronic and optoelectronic platforms. Low bandgap semiconductors such as InAs and InSb are interesting because of their high electron mobility. Fine control of the structure, morphology, and composition are key to the control of their physical properties. In this work, we present how to grow catalyst-free InAs1-xSbx nanowires, which are stacking fault and twin defect-free over several hundreds of nanometers. We evaluate the impact of their crystal phase purity by probing their electrical properties in a transistor-like configuration and by measuring the phonon-plasmon interaction by Raman spectroscopy. We also highlight the importance of high-quality dielectric coating for the reduction of hysteresis in the electrical characteristics of the nanowire transistors. High channel carrier mobilities and reduced hysteresis open the path for high-frequency devices fabricated using InAs1-xSbx nanowires.
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Affiliation(s)
- Heidi Potts
- Laboratoire des Matériaux Semiconducteurs, École Polytechnique Fédérale de Lausanne , 1015 Lausanne, Switzerland
| | - Martin Friedl
- Laboratoire des Matériaux Semiconducteurs, École Polytechnique Fédérale de Lausanne , 1015 Lausanne, Switzerland
| | - Francesca Amaduzzi
- Laboratoire des Matériaux Semiconducteurs, École Polytechnique Fédérale de Lausanne , 1015 Lausanne, Switzerland
| | - Kechao Tang
- Department of Materials Science and Engineering, Stanford University , Stanford, California 94305, United States
| | - Gözde Tütüncüoglu
- Laboratoire des Matériaux Semiconducteurs, École Polytechnique Fédérale de Lausanne , 1015 Lausanne, Switzerland
| | - Federico Matteini
- Laboratoire des Matériaux Semiconducteurs, École Polytechnique Fédérale de Lausanne , 1015 Lausanne, Switzerland
| | - Esther Alarcon Lladó
- Laboratoire des Matériaux Semiconducteurs, École Polytechnique Fédérale de Lausanne , 1015 Lausanne, Switzerland
| | - Paul C McIntyre
- Department of Materials Science and Engineering, Stanford University , Stanford, California 94305, United States
| | - Anna Fontcuberta i Morral
- Laboratoire des Matériaux Semiconducteurs, École Polytechnique Fédérale de Lausanne , 1015 Lausanne, Switzerland
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14
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Li Z, Yuan X, Fu L, Peng K, Wang F, Fu X, Caroff P, White TP, Hoe Tan H, Jagadish C. Room temperature GaAsSb single nanowire infrared photodetectors. NANOTECHNOLOGY 2015; 26:445202. [PMID: 26451616 DOI: 10.1088/0957-4484/26/44/445202] [Citation(s) in RCA: 18] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/05/2023]
Abstract
Antimonide-based ternary III-V nanowires (NWs) allow for a tunable bandgap over a wide range, which is highly interesting for optoelectronics applications, and in particular for infrared photodetection. Here we demonstrate room temperature operation of GaAs0.56Sb0.44 NW infrared photodetectors grown by metal organic vapor phase epitaxy. These GaAs0.56Sb0.44 NWs have uniform axial composition and show p-type conductivity with a peak field-effect mobility of ∼12 cm(2) V(-1) s(-1)). Under light illumination, single GaAs0.56Sb0.44 NW photodetectors exhibited typical photoconductor behavior with an increased photocurrent observed with the increase of temperature owing to thermal activation of carrier trap states. A broadband infrared photoresponse with a long wavelength cutoff at ∼1.66 μm was obtained at room temperature. At a low operating bias voltage of 0.15 V a responsivity of 2.37 (1.44) A/W with corresponding detectivity of 1.08 × 10(9) (6.55 × 10(8)) cm√Hz/W were achieved at the wavelength of 1.3 (1.55) μm, indicating that ternary GaAs0.56Sb0.44 NWs are promising photodetector candidates for small footprint integrated optical telecommunication systems.
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Affiliation(s)
- Ziyuan Li
- Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University, Canberra, ACT 2601, Australia
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15
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Huh J, Yun H, Kim DC, Munshi AM, Dheeraj DL, Kauko H, van Helvoort ATJ, Lee S, Fimland BO, Weman H. Rectifying Single GaAsSb Nanowire Devices Based on Self-Induced Compositional Gradients. NANO LETTERS 2015; 15:3709-3715. [PMID: 25941743 DOI: 10.1021/acs.nanolett.5b00089] [Citation(s) in RCA: 10] [Impact Index Per Article: 1.1] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/04/2023]
Abstract
Device configurations that enable a unidirectional propagation of carriers in a semiconductor are fundamental components for electronic and optoelectronic applications. To realize such devices, however, it is generally required to have complex processes to make p-n or Schottky junctions. Here we report on a unidirectional propagation effect due to a self-induced compositional variation in GaAsSb nanowires (NWs). The individual GaAsSb NWs exhibit a highly reproducible rectifying behavior, where the rectifying direction is determined by the NW growth direction. Combining the results from confocal micro-Raman spectroscopy, electron microscopy, and electrical measurements, the origin of the rectifying behavior is found to be associated with a self-induced variation of the Sb and the carrier concentrations in the NW. To demonstrate the usefulness of these GaAsSb NWs for device applications, NW-based photodetectors and logic circuits have been made.
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Affiliation(s)
- Junghwan Huh
- †Department of Electronics and Telecommunications, Norwegian University of Science and Technology (NTNU), NO-7491 Trondheim, Norway
| | - Hoyeol Yun
- ‡School of Physics, Konkuk University, Seoul 143-701, Korea
| | - Dong-Chul Kim
- †Department of Electronics and Telecommunications, Norwegian University of Science and Technology (NTNU), NO-7491 Trondheim, Norway
- §CrayoNano AS, Otto Nielsens vei 12, NO-7052, Trondheim, Norway
| | - A Mazid Munshi
- †Department of Electronics and Telecommunications, Norwegian University of Science and Technology (NTNU), NO-7491 Trondheim, Norway
- §CrayoNano AS, Otto Nielsens vei 12, NO-7052, Trondheim, Norway
| | - Dasa L Dheeraj
- †Department of Electronics and Telecommunications, Norwegian University of Science and Technology (NTNU), NO-7491 Trondheim, Norway
- §CrayoNano AS, Otto Nielsens vei 12, NO-7052, Trondheim, Norway
| | - Hanne Kauko
- ∥Department of Physics, Norwegian University of Science and Technology (NTNU), NO-7491, Trondheim, Norway
| | - Antonius T J van Helvoort
- ∥Department of Physics, Norwegian University of Science and Technology (NTNU), NO-7491, Trondheim, Norway
| | - SangWook Lee
- ‡School of Physics, Konkuk University, Seoul 143-701, Korea
| | - Bjørn-Ove Fimland
- †Department of Electronics and Telecommunications, Norwegian University of Science and Technology (NTNU), NO-7491 Trondheim, Norway
| | - Helge Weman
- †Department of Electronics and Telecommunications, Norwegian University of Science and Technology (NTNU), NO-7491 Trondheim, Norway
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16
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Conesa-Boj S, Kriegner D, Han XL, Plissard S, Wallart X, Stangl J, Fontcuberta i Morral A, Caroff P. Gold-free ternary III-V antimonide nanowire arrays on silicon: twin-free down to the first bilayer. NANO LETTERS 2014; 14:326-32. [PMID: 24329502 PMCID: PMC3890218 DOI: 10.1021/nl404085a] [Citation(s) in RCA: 12] [Impact Index Per Article: 1.2] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/03/2013] [Revised: 11/29/2013] [Indexed: 05/25/2023]
Abstract
With the continued maturation of III-V nanowire research, expectations of material quality should be concomitantly raised. Ideally, III-V nanowires integrated on silicon should be entirely free of extended planar defects such as twins, stacking faults, or polytypism, position-controlled for convenient device processing, and gold-free for compatibility with standard complementary metal-oxide-semiconductor (CMOS) processing tools. Here we demonstrate large area vertical GaAsxSb1-x nanowire arrays grown on silicon (111) by molecular beam epitaxy. The nanowires' complex faceting, pure zinc blende crystal structure, and composition are mapped using characterization techniques both at the nanoscale and in large-area ensembles. We prove unambiguously that these gold-free nanowires are entirely twin-free down to the first bilayer and reveal their three-dimensional composition evolution, paving the way for novel infrared devices integrated directly on the cost-effective Si platform.
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Affiliation(s)
- Sònia Conesa-Boj
- Laboratoire
des Matériaux Semiconducteurs, École
Polytechnique Fédérale de Lausanne, 1015 Lausanne, Switzerland
| | - Dominik Kriegner
- Institute
of Semiconductor and Solid State Physics, Johannes Kepler University Linz, A-4040 Linz, Austria
| | - Xiang-Lei Han
- Institut
d’Électronique, de Microélectronique et de Nanotechnologie, UMR CNRS 8520, Avenue Poincaré,
C.S. 60069, 59652 Villeneuve d’Ascq, France
| | - Sébastien Plissard
- Kavli
Institute of Nanoscience, Delft University
of Technology, 2628CJ Delft, The Netherlands
| | - Xavier Wallart
- Institut
d’Électronique, de Microélectronique et de Nanotechnologie, UMR CNRS 8520, Avenue Poincaré,
C.S. 60069, 59652 Villeneuve d’Ascq, France
| | - Julian Stangl
- Institute
of Semiconductor and Solid State Physics, Johannes Kepler University Linz, A-4040 Linz, Austria
| | - Anna Fontcuberta i Morral
- Laboratoire
des Matériaux Semiconducteurs, École
Polytechnique Fédérale de Lausanne, 1015 Lausanne, Switzerland
| | - Philippe Caroff
- Institut
d’Électronique, de Microélectronique et de Nanotechnologie, UMR CNRS 8520, Avenue Poincaré,
C.S. 60069, 59652 Villeneuve d’Ascq, France
- Department
of Electronic Materials Engineering, Research School of Physics and
Engineering, The Australian National University, Canberra, ACT 0200, Australia
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17
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Borg M, Schmid H, Moselund KE, Signorello G, Gignac L, Bruley J, Breslin C, Das Kanungo P, Werner P, Riel H. Vertical III-V nanowire device integration on Si(100). NANO LETTERS 2014; 14:1914-20. [PMID: 24628529 DOI: 10.1021/nl404743j] [Citation(s) in RCA: 51] [Impact Index Per Article: 5.1] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/21/2023]
Abstract
We report complementary metal-oxide-semiconductor (CMOS)-compatible integration of compound semiconductors on Si substrates. InAs and GaAs nanowires are selectively grown in vertical SiO2 nanotube templates fabricated on Si substrates of varying crystallographic orientations, including nanocrystalline Si. The nanowires investigated are epitaxially grown, single-crystalline, free from threading dislocations, and with an orientation and dimension directly given by the shape of the template. GaAs nanowires exhibit stable photoluminescence at room temperature, with a higher measured intensity when still surrounded by the template. Si-InAs heterojunction nanowire tunnel diodes were fabricated on Si(100) and are electrically characterized. The results indicate a high uniformity and scalability in the fabrication process.
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Affiliation(s)
- Mattias Borg
- IBM Research-Zurich , Säumerstrasse 4, 8803, Rüschlikon, Switzerland
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