Characteristics of a pressure sensitive touch sensor using a piezoelectric PVDF-TrFE/MoS2 stack

High-Performance C60 Coupled Ferroelectric Enhanced MoS2 Nonvolatile Memory

Nonvolatile memory (NVM) devices based on two-dimensional (2D) materials have recently attracted widespread attention due to their high-density integration potential and the ability to be applied in computing-in-memory systems in the post-Moore era. Considering the high current on/off ratio, programmable threshold voltage, nonvolatile multilevel memory state, and extended logic functions, plenty of breakthroughs related to ferroelectric field-effect transistors (FeFETs), one of the most important NVM devices, have been made in the past decade. Among them, FETs coupled with organic ferroelectric films such as P(VDF-TrFE) displayed properties of remarkable robustness, easy preparation, and low cost. However, the dipoles of the P(VDF-TrFE) film cannot be flipped smoothly at low voltage, impeding the further application of organic FeFET. In this paper, we proposed a high-performance FeFET based on monolayer MoS₂ coupled with C₆₀ doped ferroelectric copolymer P(VDF-TrFE). The inserted C₆₀ molecules enhanced the alignment of the dipoles effectively at low voltage, allowing the modified device to demonstrate a large memory window (∼16 V), high current on/off ratio (>10⁶), long retention time (>10 000 s), and remarkable endurance under the reduced operating voltage. In addition, the in situ logic application can be realized by constructing facile device interconnection without building complex complementary semiconductor circuits. Our results are expected to pave the way for future low-consumption computing-in-memory applications based on high-quality 2D FeFETs.

An artificial neural network chip based on two-dimensional semiconductor

Recently, research on two-dimensional (2D) semiconductors has begun to translate from the fundamental investigation into rudimentary functional circuits. In this work, we unveil the first functional MoS₂ artificial neural network (ANN) chip, including multiply-and-accumulate (MAC), memory and activation function circuits. Such MoS₂ ANN chip is realized through fabricating 818 field-effect transistors (FETs) on a wafer-scale and high-homogeneity MoS₂ film, with a gate-last process to realize top gate structured FETs. A 62-level simulation program with integrated circuit emphasis (SPICE) model is utilized to design and optimize our analog ANN circuits. To demonstrate a practical application, a tactile digit sensing recognition was demonstrated based on our ANN circuits. After training, the digit recognition rate exceeds 97%. Our work not only demonstrates the protentional of 2D semiconductors in wafer-scale integrated circuits, but also paves the way for its future application in AI computation.

Highly-stable flexible pressure sensor using piezoelectric polymer film on metal oxide TFT

In this study, a flexible pressure sensor with highly stable performance is presented. The pressure sensor was fabricated to work under low voltage conditions by using a high mobility amorphous indium–gallium–zinc oxide (a-IGZO) thin-film transistor (TFT) and a stretched polyvinylidene fluoride (PVDF) film. To prepare a stable sensor suitable for practical use, we designed a device structure that shields ambient noise by grounding the control gate. The shielding structure significantly improves the stability of the device. Moreover, the sensor was fabricated on a flexible substrate and delaminated via a laser lift-off (LLO) technique to meet the urgent needs for flexibility. The pressure sensor showed good sensitivity and reliability over a pressure ranging from 0 to 75 kPa which covers the human touch pressure range. Especially, good linearity over a wide pressure range and high stability over 1000 repeated loadings were realized. Due to the simple structure, the pressure sensor demonstrates the advantage of being inexpensive to be manufactured and holds the potential to be integrated into the display backplane. Therefore, the proposed sensor has great potential in the production of flexible touch screens, human–machine interacting applications, and even electronic skins in the future.

Flexible piezoelectric pressure sensor using a-IGZO TFT was prepared and a shielding structure was proposed to stabilize the response current.

Molecular Approach to Engineer Two-Dimensional Devices for CMOS and beyond-CMOS Applications

Two-dimensional materials (2DMs) have attracted tremendous research interest over the last two decades. Their unique optical, electronic, thermal, and mechanical properties make 2DMs key building blocks for the fabrication of novel complementary metal-oxide-semiconductor (CMOS) and beyond-CMOS devices. Major advances in device functionality and performance have been made by the covalent or noncovalent functionalization of 2DMs with molecules: while the molecular coating of metal electrodes and dielectrics allows for more efficient charge injection and transport through the 2DMs, the combination of dynamic molecular systems, capable to respond to external stimuli, with 2DMs makes it possible to generate hybrid systems possessing new properties by realizing stimuli-responsive functional devices and thereby enabling functional diversification in More-than-Moore technologies. In this review, we first introduce emerging 2DMs, various classes of (macro)molecules, and molecular switches and discuss their relevant properties. We then turn to 2DM/molecule hybrid systems and the various physical and chemical strategies used to synthesize them. Next, we discuss the use of molecules and assemblies thereof to boost the performance of 2D transistors for CMOS applications and to impart diverse functionalities in beyond-CMOS devices. Finally, we present the challenges, opportunities, and long-term perspectives in this technologically promising field.

Changes in Permittivity of the Piezoelectric Material PVDF as Functions of the Electrical Field and Temperature

Polyvinylidene Fluoride (PVDF) is becoming a widely used piezoelectric material because of its flexibility, low cost, light weight, and biocompatibility. Its electronic properties, such as its permittivity, can be affected by material crystal structure variations, which also greatly impact the material's application. It is known that external stress and electrical fields can alter the crystal structure of piezoelectric material. In this research, we aim to investigate the relationship between the external electrical field and the permittivity property of PVDF material. The basic standard equations, finite element analysis, and experimental measurement are included in this paper. By using sweeping voltages from -25 V to +25 V using an Agilent Technologies B1500A Semiconductor Device Analyzer, an increase in the permittivity of the PVDF material is observed. In this work, the study of the permittivity change under the application of different electrical fields at room temperature is presented, and the application of the electrical field under different temperatures is also studied and presented.

Wearable Electronics Based on 2D Materials for Human Physiological Information Detection

Recently, advancement in materials production, device fabrication, and flexible circuit has led to the huge prosperity of wearable electronics for human healthcare monitoring and medical diagnosis. Particularly, with the emergence of 2D materials many merits including light weight, high stretchability, excellent biocompatibility, and high performance are used for those potential applications. Thus, it is urgent to review the wearable electronics based on 2D materials for the detection of various human signals. In this work, the typical graphene-based materials, transition-metal dichalcogenides, and transition metal carbides or carbonitrides used for the wearable electronics are discussed. To well understand the human physiological information, it is divided into two dominated categories, namely, the human physical and the human chemical signals. The monitoring of body temperature, electrograms, subtle signals, and limb motions is described for the physical signals while the detection of body fluid including sweat, breathing gas, and saliva is reviewed for the chemical signals. Recent progress and development toward those specific utilizations are highlighted in the Review with the representative examples. The future outlook of wearable healthcare techniques is briefly discussed for their commercialization.

Highly Sensitive Impact Sensor Based on PVDF-TrFE/Nano-ZnO Composite Thin Film

A thin film of polyvinylidene fluoride-trifluoroethylene (PVDF-TrFE) has good flexibility and simple preparation process. More importantly, compared with PVDF, its piezoelectric β-phase can be easily formed without mechanical stretching. However, its piezoelectricity is relatively lower. Therefore, at present, PVDF-TrFE is always compounded with other kinds of piezoelectric materials to solve this problem. The effect of nano-ZnO doping amount on the sensing characteristics of the piezoelectric films was studied. PVDF-TrFE/nano-ZnO films with different nano-ZnO contents were prepared by spin coating process and packaged. The dispersion of nano-ZnO dopants and the crystallinity of β-phase in piezoelectric films with different nano-ZnO contents were observed by scanning electron microscopy and X-ray diffraction, and the piezoelectric strain constants and dielectric constants were measured, respectively. The effect of different nano-ZnO contents on the output performance of the piezoelectric sensor was obtained by a series of impact experiments. The results show that the piezoelectric strain constant and dielectric constant can be increased by doping nano-ZnO in PVDF-TrFE. Moreover, the doping amount of nano-ZnO in PVDF-TrFE is of great significance for improving the piezoelectric properties of PVDF-TrFE/nano-ZnO thin films. Among the prepared piezoelectric films, the output voltage of PVDF-TrFE/nano-ZnO piezoelectric sensor with 7.5% nano-ZnO doping amount is about 5.5 times that of pure PVDF-TrFE. Thus, the optimal range of the doping amount for nano-ZnO is about 4⁻10%.

High Three-Dimensional Detection Accuracy in Piezoelectric-Based Touch Panel in Interactive Displays by Optimized Artificial Neural Networks

High detection accuracy in piezoelectric-based force sensing in interactive displays has gained global attention. To achieve this, artificial neural networks (ANN)-successful and widely used machine learning algorithms-have been demonstrated to be potentially powerful tools, providing acceptable location detection accuracy of 95.2% and force level recognition of 93.3% in a previous study. While these values might be acceptable for conventional operations, e.g., opening a folder, they must be boosted for applications where intensive operations are performed. Furthermore, the relatively high computational cost reported prevents the popularity of ANN-based techniques in conventional artificial intelligence (AI) chip-free end-terminals. In this article, an ANN is designed and optimized for piezoelectric-based touch panels in interactive displays for the first time. The presented technique experimentally allows a conventional smart device to work smoothly with a high detection accuracy of above 97% for both location and force level detection with a low computational cost, thereby advancing the user experience, and serviced by piezoelectric-based touch interfaces in displays.

Highly Sensitive and Flexible Strain-Pressure Sensors with Cracked Paddy-Shaped MoS2/Graphene Foam/Ecoflex Hybrid Nanostructures

Three-dimensional graphene porous networks (GPNs) have received considerable attention as a nanomaterial for wearable touch sensor applications because of their outstanding electrical conductivity and mechanical stability. Herein, we demonstrate a strain-pressure sensor with high sensitivity and durability by combining molybdenum disulfide (MoS₂) and Ecoflex with a GPN. The planar sheets of MoS₂ bonded to the GPN were conformally arranged with a cracked paddy shape, and the MoS₂ nanoflakes were formed on the planar sheet. The size and density of the MoS₂ nanoflakes were gradually increased by raising the concentration of (NH₄)₂MoS₄. We found that this conformal nanostructure of MoS₂ on the GPN surface can produce improved resistance variation against external strain and pressure. Consequently, our MoS₂/GPN/Ecoflex sensors exhibited noticeably improved sensitivity compared to previously reported GPN/polydimethylsiloxane sensors in a pressure test because of the existence of the conformal planar sheet of MoS₂. In particular, the MoS₂/GPN/Ecoflex sensor showed a high sensitivity of 6.06 kPa^-1 at a (NH₄)₂MoS₄ content of 1.25 wt %. At the same time, it displayed excellent durability even under repeated loading-unloading pressure and bending over 4000 cycles. When the sensor was attached on a human temple and neck, it worked correctly as a drowsiness detector in response to motion signals such as neck bending and eye blinking. Finally, a 3 × 3 tactile sensor array showed precise touch sensing capability with complete isolation of electrodes from each other for application to touch electronic applications.

Interfacing 2D Semiconductors with Functional Oxides: Fundamentals, Properties, and Applications

Two-dimensional semiconductors, such as transition-metal dichalcogenides (TMDs) and black phosphorous (BP), have found various potential applications in electronic and opto-electronic devices. However, several problems including low carrier mobility and low photoluminescence efficiencies still limit the performance of these devices. Interfacing 2D semiconductors with functional oxides provides a way to address the problems by overcoming the intrinsic limitations of 2D semiconductors and offering them multiple functionalities with various mechanisms. In this review, we first focus on the physical effects of various types of functional oxides on 2D semiconductors, mostly on MoS2 and BP as they are the intensively studied 2D semiconductors. Insulating, semiconducting, conventional piezoelectric, strongly correlated, and magnetic oxides are discussed. Then we introduce the applications of these 2D semiconductors/functional oxides systems in field-effect devices, nonvolatile memory, and photosensing. Finally, we discuss the perspectives and challenges within this research field. Our review provides a comprehensive understanding of 2D semiconductors/functional oxide heterostructures, and could inspire novel ideas in interface engineering to improve the performance of 2D semiconductor devices.

Infrared light gated MoS₂ field effect transistor

Molybdenum disulfide (MoS₂) as a promising 2D material has attracted extensive attentions due to its unique physical, optical and electrical properties. In this work, we demonstrate an infrared (IR) light gated MoS₂ transistor through a device composed of MoS₂ monolayer and a ferroelectric single crystal Pb(Mg(1/3)Nb(2/3))O₃-PbTiO₃ (PMN-PT). With a monolayer MoS₂ onto the top surface of (111) PMN-PT crystal, the drain current of MoS₂ channel can be modulated with infrared illumination and this modulation process is reversible. Thus, the transistor can work as a new kind of IR photodetector with a high IR responsivity of 114%/Wcm⁻². The IR response of MoS₂ transistor is attributed to the polarization change of PMN-PT single crystal induced by the pyroelectric effect which results in a field effect. Our result promises the application of MoS₂ 2D material in infrared optoelectronic devices. Combining with the intrinsic photocurrent feature of MoS₂ in the visible range, the MoS₂ on ferroelectric single crystal may be sensitive to a broadband wavelength of light.