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Lee S, Kim S, Yoo H. Contribution of Polymers to Electronic Memory Devices and Applications. Polymers (Basel) 2021; 13:3774. [PMID: 34771332 PMCID: PMC8588209 DOI: 10.3390/polym13213774] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/14/2021] [Revised: 10/26/2021] [Accepted: 10/29/2021] [Indexed: 11/23/2022] Open
Abstract
Electronic memory devices, such as memristors, charge trap memory, and floating-gate memory, have been developed over the last decade. The use of polymers in electronic memory devices enables new opportunities, including easy-to-fabricate processes, mechanical flexibility, and neuromorphic applications. This review revisits recent efforts on polymer-based electronic memory developments. The versatile contributions of polymers for emerging memory devices are classified, providing a timely overview of such unconventional functionalities with a strong emphasis on the merits of polymer utilization. Furthermore, this review discusses the opportunities and challenges of polymer-based memory devices with respect to their device performance and stability for practical applications.
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Affiliation(s)
| | | | - Hocheon Yoo
- Department of Electronic Engineering, Gachon University, Seongnam 1342, Korea; (S.L.); (S.K.)
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2
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Ni Y, Wang Y, Xu W. Recent Process of Flexible Transistor-Structured Memory. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2021; 17:e1905332. [PMID: 32243063 DOI: 10.1002/smll.201905332] [Citation(s) in RCA: 18] [Impact Index Per Article: 6.0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/18/2019] [Revised: 12/20/2019] [Accepted: 03/04/2020] [Indexed: 06/11/2023]
Abstract
Flexible transistor-structured memory (FTSM) has attracted great attention for its important role in flexible electronics. For nonvolatile information storage, FTSMs with floating-gate, charge-trap, and ferroelectric mechanisms have been developed. By introducing an optical sensory module, FTSM can be operated by optical inputs to function as an optical memory transistor. As a special type of FTSM, transistor-structured artificial synapse emulates important functions of a biological synapse to mimic brain-inspired memory behaviors and nervous signal transmissions. This work reviews the recent development of the above mentioned FTSMs, with a focus on working mechanism and materials, and flexibility.
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Affiliation(s)
- Yao Ni
- Institute of Optoelectronic Thin Film Devices and Technology, Key Laboratory of Optoelectronic Thin Film Devices and Technology of Tianjin, Nankai University, Tianjin, 300350, China
| | - Yongfei Wang
- School of Materials and Metallurgy, University of Science and Technology Liaoning, Anshan, 114051, China
| | - Wentao Xu
- Institute of Optoelectronic Thin Film Devices and Technology, Key Laboratory of Optoelectronic Thin Film Devices and Technology of Tianjin, Nankai University, Tianjin, 300350, China
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Improved Memory Properties of Graphene Oxide-Based Organic Memory Transistors. MICROMACHINES 2019; 10:mi10100643. [PMID: 31557870 PMCID: PMC6843658 DOI: 10.3390/mi10100643] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 08/15/2019] [Revised: 09/20/2019] [Accepted: 09/23/2019] [Indexed: 11/16/2022]
Abstract
To investigate the behaviour of the organic memory transistors, graphene oxide (GO) was utilized as the floating gate in 6,13-Bis(triisopropylsilylethynyl)pentacene (TIPS-pentacene)-based organic memory transistors. A cross-linked, off-centre spin-coated and ozone-treated poly(methyl methacrylate) (cPMMA) was used as the insulating layer. High mobility and negligible hysteresis with very clear transistor behaviour were observed for the control transistors. On the other hand, memory transistors exhibited clear large hysteresis which is increased with increasing programming voltage. The shifts in the threshold voltage of the transfer characteristics as well as the hysteresis in the output characteristics were attributed to the charging and discharging of the floating gate. The counter-clockwise direction of hysteresis indicates that the process of charging and discharging the floating gate take place through the semiconductor/insulator interface. A clear shift in the threshold voltage was observed when different voltage pulses were applied to the gate. The non-volatile behaviour of the memory transistors was investigated in terms of charge retention. The memory transistors exhibited a large memory window (~30 V), and high charge density of (9.15 × 1011 cm-2).
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Park Y, Baeg KJ, Kim C. Solution-Processed Nonvolatile Organic Transistor Memory Based on Semiconductor Blends. ACS APPLIED MATERIALS & INTERFACES 2019; 11:8327-8336. [PMID: 30707007 DOI: 10.1021/acsami.8b20571] [Citation(s) in RCA: 11] [Impact Index Per Article: 2.2] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
Solution-processed nonvolatile organic transistor memory devices are fabricated by employing semiconductor blends of p-channel 6,13-bis(triisopropylsilylethynyl)pentacene and n-channel poly{[ N, N'-bis(2-octyldodecyl)-naphthalene-1,4,5,8-bis(dicarboximide)-2,6-diyl]- alt-5,5'-(2,2'-bithiophene)} (P(NDI2OD-2T); N2200) on polystyrene-brush as a polymer electret. Electret-based memory characteristics are significantly changed depending on the frontier molecular orbitals of the active semiconductors because the charge-trapping efficiency is mainly determined by the energy barrier to transfer electrons and holes from the active channel to the electret layer. A semiconductor mixture with an optimized blending ratio results in an efficient programming and erasing process. Thus, we obtained a remarkably high ratio of ON/OFF current (memory ratio) about 107 and a large amount of shifts in the threshold voltage (memory window) between the programmed and erased states of 55 V, while single-component N2200 showed only writing-once-read-many (WORM)-type memory. Especially, the programmed data can be stably retained more than 10 years with a sufficient memory ratio of 103. Furthermore, our semiconductor blend system leads to preferable vertical phase separation, which affords good reliability under a sequential memory operation condition as well as stability in ambient air. It is expected that our memory devices can be applied for versatile data storage in printed and flexible electronic applications.
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Affiliation(s)
- Yonghan Park
- Department of Chemical and Biomolecular Engineering , Sogang University , 35 Baekbeom-ro , Mapo-gu, Seoul 04107 , Republic of Korea
| | - Kang-Jun Baeg
- Department of Graphic Arts Information Engineering , Pukyong National University , 45 Yongso-ro , Nam-gu, Busan 48513 , Republic of Korea
| | - Choongik Kim
- Department of Chemical and Biomolecular Engineering , Sogang University , 35 Baekbeom-ro , Mapo-gu, Seoul 04107 , Republic of Korea
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Zhou L, Mao J, Ren Y, Han ST, Roy VAL, Zhou Y. Recent Advances of Flexible Data Storage Devices Based on Organic Nanoscaled Materials. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2018; 14:1703126. [PMID: 29377568 DOI: 10.1002/smll.201703126] [Citation(s) in RCA: 47] [Impact Index Per Article: 7.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/10/2017] [Revised: 11/04/2017] [Indexed: 06/07/2023]
Abstract
Following the trend of miniaturization as per Moore's law, and facing the strong demand of next-generation electronic devices that should be highly portable, wearable, transplantable, and lightweight, growing endeavors have been made to develop novel flexible data storage devices possessing nonvolatile ability, high-density storage, high-switching speed, and reliable endurance properties. Nonvolatile organic data storage devices including memory devices on the basis of floating-gate, charge-trapping, and ferroelectric architectures, as well as organic resistive memory are believed to be favorable candidates for future data storage applications. In this Review, typical information on device structure, memory characteristics, device operation mechanisms, mechanical properties, challenges, and recent progress of the above categories of flexible data storage devices based on organic nanoscaled materials is summarized.
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Affiliation(s)
- Li Zhou
- College of Electronic Science and Technology, Shenzhen University, Shenzhen, 518060, P. R. China
- Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Jingyu Mao
- Institute for Advanced Study, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Yi Ren
- Institute for Advanced Study, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Su-Ting Han
- College of Electronic Science and Technology, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Vellaisamy A L Roy
- Department of Materials Science and Engineering, City University of Hong Kong, Kowloon, 999077, Hong Kong SAR
| | - Ye Zhou
- Institute for Advanced Study, Shenzhen University, Shenzhen, 518060, P. R. China
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Flowers PF, Catenacci MJ, Wiley BJ. High-speed, solution-coatable memory based on Cu-SiO 2 core-shell nanowires. NANOSCALE HORIZONS 2016; 1:313-316. [PMID: 32260651 DOI: 10.1039/c6nh00020g] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Printable electronics has the potential to drastically reduce the environmental and economic costs associated with the production of electronic devices, as well as enable rapid prototyping of circuits and their printing on demand, similar to what 3D printing has done for structural objects. A major barrier to the realization of printable computers that can run programs is the lack of a solution-coatable non-volatile memory with performance metrics comparable to silicon-based devices. Here we demonstrate a non-volatile memory based on Cu-SiO2 core-shell nanowires that can be printed from solution and exhibits on-off ratios of 106, switching speeds of 50 ns, a low operating voltage of 2 V, and operates for at least 104 cycles without failure. Each of these metrics is similar to or better than Flash memory (the write speed is 20 times faster than Flash). Memory architectures based on the individual memory cells demonstrated here could enable the printing of the more complex, embedded computing devices that are expected to make up an internet of things.
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Affiliation(s)
- Patrick F Flowers
- Department of Chemistry, Duke University, Durham, North Carolina 27708, USA.
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Shih CC, Lee WY, Chiu YC, Hsu HW, Chang HC, Liu CL, Chen WC. High Performance Transparent Transistor Memory Devices Using Nano-Floating Gate of Polymer/ZnO Nanocomposites. Sci Rep 2016; 6:20129. [PMID: 26831222 PMCID: PMC4735596 DOI: 10.1038/srep20129] [Citation(s) in RCA: 62] [Impact Index Per Article: 7.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/03/2015] [Accepted: 12/21/2015] [Indexed: 11/17/2022] Open
Abstract
Nano-floating gate memory devices (NFGM) using metal nanoparticles (NPs) covered with an insulating polymer have been considered as a promising electronic device for the next-generation nonvolatile organic memory applications NPs. However, the transparency of the device with metal NPs is restricted to 60~70% due to the light absorption in the visible region caused by the surface plasmon resonance effects of metal NPs. To address this issue, we demonstrate a novel NFGM using the blends of hole-trapping poly (9-(4-vinylphenyl) carbazole) (PVPK) and electron-trapping ZnO NPs as the charge storage element. The memory devices exhibited a remarkably programmable memory window up to 60 V during the program/erase operations, which was attributed to the trapping/detrapping of charge carriers in ZnO NPs/PVPK composite. Furthermore, the devices showed the long-term retention time (>10(5) s) and WRER test (>200 cycles), indicating excellent electrical reliability and stability. Additionally, the fabricated transistor memory devices exhibited a relatively high transparency of 90% at the wavelength of 500 nm based on the spray-coated PEDOT PSS as electrode, suggesting high potential for transparent organic electronic memory devices.
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Affiliation(s)
- Chien-Chung Shih
- Department of Chemical Engineering, National Taiwan University, Taipei, 10617 Taiwan
| | - Wen-Ya Lee
- Department of Chemical Engineering and Biotechnology, National Taipei University of Technology, Taipei, 10608
| | - Yu-Cheng Chiu
- Department of Chemical Engineering, National Taiwan University, Taipei, 10617 Taiwan
| | - Han-Wen Hsu
- Department of Chemical and Materials Engineering, National Central University, Taoyuan 32001, Taiwan
| | - Hsuan-Chun Chang
- Department of Chemical Engineering, National Taiwan University, Taipei, 10617 Taiwan
| | - Cheng-Liang Liu
- Department of Chemical and Materials Engineering, National Central University, Taoyuan 32001, Taiwan
| | - Wen-Chang Chen
- Department of Chemical Engineering, National Taiwan University, Taipei, 10617 Taiwan
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Kim J, Son D, Lee M, Song C, Song JK, Koo JH, Lee DJ, Shim HJ, Kim JH, Lee M, Hyeon T, Kim DH. A wearable multiplexed silicon nonvolatile memory array using nanocrystal charge confinement. SCIENCE ADVANCES 2016; 2:e1501101. [PMID: 26763827 PMCID: PMC4705037 DOI: 10.1126/sciadv.1501101] [Citation(s) in RCA: 69] [Impact Index Per Article: 8.6] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/14/2015] [Accepted: 11/03/2015] [Indexed: 05/20/2023]
Abstract
Strategies for efficient charge confinement in nanocrystal floating gates to realize high-performance memory devices have been investigated intensively. However, few studies have reported nanoscale experimental validations of charge confinement in closely packed uniform nanocrystals and related device performance characterization. Furthermore, the system-level integration of the resulting devices with wearable silicon electronics has not yet been realized. We introduce a wearable, fully multiplexed silicon nonvolatile memory array with nanocrystal floating gates. The nanocrystal monolayer is assembled over a large area using the Langmuir-Blodgett method. Efficient particle-level charge confinement is verified with the modified atomic force microscopy technique. Uniform nanocrystal charge traps evidently improve the memory window margin and retention performance. Furthermore, the multiplexing of memory devices in conjunction with the amplification of sensor signals based on ultrathin silicon nanomembrane circuits in stretchable layouts enables wearable healthcare applications such as long-term data storage of monitored heart rates.
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Affiliation(s)
- Jaemin Kim
- Center for Nanoparticle Research, Institute for Basic Science (IBS), Seoul 151-742, Republic of Korea
- School of Chemical and Biological Engineering, Institute of Chemical Processes, Seoul National University, Seoul 151-742, Republic of Korea
| | - Donghee Son
- Center for Nanoparticle Research, Institute for Basic Science (IBS), Seoul 151-742, Republic of Korea
- School of Chemical and Biological Engineering, Institute of Chemical Processes, Seoul National University, Seoul 151-742, Republic of Korea
| | - Mincheol Lee
- Center for Nanoparticle Research, Institute for Basic Science (IBS), Seoul 151-742, Republic of Korea
- School of Chemical and Biological Engineering, Institute of Chemical Processes, Seoul National University, Seoul 151-742, Republic of Korea
| | - Changyeong Song
- Center for Nanoparticle Research, Institute for Basic Science (IBS), Seoul 151-742, Republic of Korea
- School of Chemical and Biological Engineering, Institute of Chemical Processes, Seoul National University, Seoul 151-742, Republic of Korea
| | - Jun-Kyul Song
- Center for Nanoparticle Research, Institute for Basic Science (IBS), Seoul 151-742, Republic of Korea
- School of Chemical and Biological Engineering, Institute of Chemical Processes, Seoul National University, Seoul 151-742, Republic of Korea
| | - Ja Hoon Koo
- Center for Nanoparticle Research, Institute for Basic Science (IBS), Seoul 151-742, Republic of Korea
- Interdisciplinary Program for Bioengineering, Seoul National University, Seoul 151-742, Republic of Korea
| | - Dong Jun Lee
- Center for Nanoparticle Research, Institute for Basic Science (IBS), Seoul 151-742, Republic of Korea
- School of Chemical and Biological Engineering, Institute of Chemical Processes, Seoul National University, Seoul 151-742, Republic of Korea
| | - Hyung Joon Shim
- Center for Nanoparticle Research, Institute for Basic Science (IBS), Seoul 151-742, Republic of Korea
- School of Chemical and Biological Engineering, Institute of Chemical Processes, Seoul National University, Seoul 151-742, Republic of Korea
| | - Ji Hoon Kim
- School of Mechanical Engineering, Pusan National University, Busan 609-735, Republic of Korea
| | - Minbaek Lee
- Department of Physics, Inha University, Incheon 402-751, Republic of Korea
| | - Taeghwan Hyeon
- Center for Nanoparticle Research, Institute for Basic Science (IBS), Seoul 151-742, Republic of Korea
- School of Chemical and Biological Engineering, Institute of Chemical Processes, Seoul National University, Seoul 151-742, Republic of Korea
- Interdisciplinary Program for Bioengineering, Seoul National University, Seoul 151-742, Republic of Korea
| | - Dae-Hyeong Kim
- Center for Nanoparticle Research, Institute for Basic Science (IBS), Seoul 151-742, Republic of Korea
- School of Chemical and Biological Engineering, Institute of Chemical Processes, Seoul National University, Seoul 151-742, Republic of Korea
- Interdisciplinary Program for Bioengineering, Seoul National University, Seoul 151-742, Republic of Korea
- Corresponding author. E-mail:
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Mosciatti T, Haar S, Liscio F, Ciesielski A, Orgiu E, Samorì P. A multifunctional polymer-graphene thin-film transistor with tunable transport regimes. ACS NANO 2015; 9:2357-2367. [PMID: 25689615 DOI: 10.1021/acsnano.5b00050] [Citation(s) in RCA: 11] [Impact Index Per Article: 1.2] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/04/2023]
Abstract
Here we describe a strategy to fabricate multifunctional graphene-polymer hybrid thin-film transistors (PG-TFT) whose transport properties are tunable by varying the deposition conditions of liquid-phase exfoliated graphene (LPE-G) dispersions onto a dielectric surface and via thermal annealing post-treatments. In particular, the ionization energy (IE) of the LPE-G drop-cast on SiO2 can be finely adjusted prior to polymer deposition via thermal annealing in air environment, exhibiting values gradually changing from 4.8 eV up to 5.7 eV. Such a tunable graphene's IE determines dramatically different electronic interactions between the LPE-G and the semiconducting polymer (p- or n-type) sitting on its top, leading to devices where the output current of the PG-TFT can be operated from being completely turned off up to modulable. In fact upon increasing the surface coverage of graphene nanoflakes on the SiO2 the charge transport properties within the top polymer layer are modified from being semiconducting up to truly conductive (graphite-like). Significantly, when the IE of LPE-G is outside the polymer band gap, the PG-TFT can operate as a multifunctional three terminal switch (transistor) and/or memory device featuring high number of erase-write cycles. Our PG-TFT, based on a fine energy level engineering, represents a memory device operating without the need of a dielectric layer separating a floating gate from the active channel.
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Affiliation(s)
| | | | - Fabiola Liscio
- ‡Istituto per la Microelettronica e Microsistemi (IMM) - CNR, via Gobetti 101, 40129 Bologna, Italy
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Park YS, Lee JS. Design of an efficient charge-trapping layer with a built-in tunnel barrier for reliable organic-transistor memory. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2015; 27:706-711. [PMID: 25475911 DOI: 10.1002/adma.201404625] [Citation(s) in RCA: 20] [Impact Index Per Article: 2.2] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/07/2014] [Revised: 11/03/2014] [Indexed: 06/04/2023]
Abstract
A fully feasible and versatile way to fabricate highly reliable organic-transistor memory devices is made possible by a novel design of the charge-trappling layer. Gold@silica (core-shell)-structured nanoparticles are synthesized and used as the charge-trapping layer. Superior electrical reliability is obtained because the silica shell acts as a built-in tunnel potential barrier.
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Affiliation(s)
- Young-Su Park
- School of Advanced Materials Engineering, Kookmin University, Seoul, 136-702, Korea
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