Charged nano-domes and bubbles in epitaxial graphene

The Strain-Tuned Spin Seebeck Effect, Spin Polarization, and Giant Magnetoresistance of a Graphene Nanobubble in Zigzag Graphene Nanoribbons

By using first-principle calculations combined with the non-equilibrium Green's function approach, we studied the spin caloritronic properties of zigzag graphene nanoribbons with a nanobubble at the edge (NB-ZGNRs). The thermal spin-polarized currents can be induced by a temperature difference, and the spin Seebeck effect is found in the nanoribbon. The spin polarization, magnetoresistance, and Seebeck coefficients are discussed, which are strongly affected and can be tuned by the geometrical strain. Moreover, some novel spin caloritronic devices are designed, such as a device that generates bidirectional perfect spin currents and thermally induced giant magnetoresistances. Our results open up the possibility of tuning the spin caloritronic properties of the NB-ZGNR-based devices by changing the elastic strain on the graphene nanobubble.

The spin-dependent transport properties of defected zigzag graphene nanoribbons with graphene nanobubbles

Zigzag-edged graphene nanoribbons (ZGNRs) have important applications in spintronics and spin caloritronics. While in the preparation of a ZGNR, defects like the graphene nanobubbles often appear, which may affect the physical properties of the ZGNR. In this paper, we studied the transport properties of a defected ZGNR with a graphene nanobubble by performing first-principles quantum transport calculations. The results show that when the nanobubble is intact and locates at the centre, the spin polarization and magnetoresistance tend to drop off in the low bias voltage cases, compared to the ideal ZGNR. While when the nanobubble is split and locates at the edge, all the transport properties are significantly affected and altered, such as the spin polarization, the giant magnetoresistance effect and the spin Seebeck effect. Meanwhile, some new results are obtained from the device, including the negative differential resistance effect and the pure thermal-induced spin-current.

Kusmartsev F, Kusmartseva A, H. Alkallas F, AlFaify S, Shkir M. Raman Spectroscopy Imaging of Exceptional Electronic Properties in Epitaxial Graphene Grown on SiC

Graphene distinctive electronic and optical properties have sparked intense interest throughout the scientific community bringing innovation and progress to many sectors of academia and industry. Graphene manufacturing has rapidly evolved since its discovery in 2004. The diverse growth methods of graphene have many comparative advantages in terms of size, shape, quality and cost. Specifically, epitaxial graphene is thermally grown on a silicon carbide (SiC) substrate. This type of graphene is unique due to its coexistence with the SiC underneath which makes the process of transferring graphene layers for devices manufacturing simple and robust. Raman analysis is a sensitive technique extensively used to explore nanocarbon material properties. Indeed, this method has been widely used in graphene studies in fundamental research and application fields. We review the principal Raman scattering processes in SiC substrate and demonstrate epitaxial graphene growth. We have identified the Raman bands signature of graphene for different layers number. The method could be readily adopted to characterize structural and exceptional electrical properties for various epitaxial graphene systems. Particularly, the variation of the charge carrier concentration in epitaxial graphene of different shapes and layers number have been precisely imaged. By comparing the intensity ratio of 2D line and G line-"I2D/IG"-the density of charge across the graphene layers could be monitored. The obtained results were compared to previous electrical measurements. The substrate longitudinal optical phonon coupling "LOOPC" modes have also been examined for several epitaxial graphene layers. The LOOPC of the SiC substrate shows a precise map of the density of charge in epitaxial graphene systems for different graphene layers number. Correlations between the density of charge and particular graphene layer shape such as bubbles have been determined. All experimental probes show a high degree of consistency and efficiency. Our combined studies have revealed novel capacitor effect in diverse epitaxial graphene system. The SiC substrate self-compensates the graphene layer charge without any external doping. We have observed a new density of charge at the graphene-substrate interface. The located capacitor effects at epitaxial graphene-substrate interfaces give rise to an unexpected mini gap in graphene band structure.

Optical Transistor for Amplification of Radiation in a Broadband Terahertz Domain

We propose a new type of optical transistor for a broadband amplification of terahertz radiation. It is made of a graphene-superconductor hybrid, where electrons and Cooper pairs couple by Coulomb forces. The transistor operates via the propagation of surface plasmons in both layers, and the origin of amplification is the quantum capacitance of graphene. It leads to terahertz waves amplification, the negative power absorption, and as a result, the system yields positive gain, and the hybrid acts like an optical transistor, operating with the terahertz light. It can, in principle, amplify even a whole spectrum of chaotic signals (or noise), which is required for numerous biological applications.

Phase imaging and nanoscale energy dissipation of supported graphene using amplitude modulation atomic force microscopy

We investigate the phase imaging of supported graphene using amplitude modulation atomic force microscopy (AFM), the so-called tapping mode. The phase contrast between graphene and the neighboring substrate grows in hard tapping conditions and the contrast is enhanced compared to the topographic one. Therefore, phase measurements could enable the high-contrast imaging of graphene and related two-dimensional materials and heterostructures, which is not achievable with conventional AFM based topographic measurements. Obtained phase maps are then transformed into energy dissipation maps, which are important for graphene applications in various nano-mechanical systems. From a fundamental point of view, energy dissipation gives further insight into mechanical properties. Reliable measurements, obtained in the repulsive regime, show that the energy dissipation on a graphene-covered substrate is lower than that on a bare one, so graphene provides certain shielding in tip-substrate interaction. Based on the obtained phase curves and their derivatives, as well as on correlation measurements based on AFM nanoindentation and force modulation microscopy, we conclude that the main dissipation channels in graphene-substrate systems are short-range hysteresis and long-range interfacial forces.

Morphological imperfections of epitaxial graphene: from a hindrance to the generation of new photo-responses in the visible domain

We report the discovery of remarkable photo-physical phenomena with characteristics unique to epitaxial graphene grown on 6H-SiC (000-1). Surprisingly, the electrical resistance of graphene increases under light illumination in contrast to conventional materials where it normally decreases. The resistance shows logarithmic temperature dependences which may be attributed to an Altshuler-Aronov effect. We show that the photoresistance depends on the frequency of the irradiating light, with three lasers (red, green, and violet) used to demonstrate the phenomenon. The counterintuitive rise of the positive photoresistance may be attributed to a creation of trapped charges upon irradiation. We argue that the origin of the photoresistance is related to the texture formed by the graphene flakes. Photovoltage also exists and increases with light intensity. However, its value saturates quickly with irradiation and does not change with time. The saturation of the photovoltage may be associated with the formation of a quasi-equilibrium state of the excited electrons and holes associated with a charge redistribution between the graphene and SiC substrate. The obtained physical picture is in agreement with the photoresistance measurements: X-ray photoelectron spectrometry "XPS", atomic force microscopy "AFM", Raman spectroscopy and the magnetic dependence of photoresistance decay measurements. We also observed non-decaying photoresistance and linear magnetoresistance in magnetic fields up to 1 T. We argue that this is due to topological phases spontaneously induced by persistent current formation within the graphene flake edges by magnetic fields.

Probing the shape of a graphene nanobubble

Universal shape behavior and ∼1 GPa vdW pressure in a small ∼10 nm graphene nanobubble.

Large area molybdenum disulphide- epitaxial graphene vertical Van der Waals heterostructures

Two-dimensional layered transition metal dichalcogenides (TMDCs) show great potential for optoelectronic devices due to their electronic and optical properties. A metal-semiconductor interface, as epitaxial graphene - molybdenum disulfide (MoS2), is of great interest from the standpoint of fundamental science, as it constitutes an outstanding platform to investigate the interlayer interaction in van der Waals heterostructures. Here, we study large area MoS2-graphene-heterostructures formed by direct transfer of chemical-vapor deposited MoS2 layer onto epitaxial graphene/SiC. We show that via a direct transfer, which minimizes interface contamination, we can obtain high quality and homogeneous van der Waals heterostructures. Angle-resolved photoemission spectroscopy (ARPES) measurements combined with Density Functional Theory (DFT) calculations show that the transition from indirect to direct bandgap in monolayer MoS2 is maintained in these heterostructures due to the weak van der Waals interaction with epitaxial graphene. A downshift of the Raman 2D band of the graphene, an up shift of the A1g peak of MoS2 and a significant photoluminescence quenching are observed for both monolayer and bilayer MoS2 as a result of charge transfer from MoS2 to epitaxial graphene under illumination. Our work provides a possible route to modify the thin film TDMCs photoluminescence properties via substrate engineering for future device design.

High Electron Mobility in Epitaxial Trilayer Graphene on Off-axis SiC(0001)

The van de Waals heterostructure formed by an epitaxial trilayer graphene is of particular interest due to its unique tunable electronic band structure and stacking sequence. However, to date, there has been a lack in the fundamental understanding of the electronic properties of epitaxial trilayer graphene. Here, we investigate the electronic properties of large-area epitaxial trilayer graphene on a 4° off-axis SiC(0001) substrate. Micro-Raman mappings and atomic force microscopy (AFM) confirmed predominantly trilayer on the sample obtained under optimized conditions. We used angle-resolved photoemission spectroscopy (ARPES) and Density Functional Theory (DFT) calculations to study in detail the structure of valence electronic states, in particular the dispersion of π bands in reciprocal space and the exact determination of the number of graphene layers. Using far-infrared magneto-transmission (FIR-MT), we demonstrate, that the electron cyclotron resonance (CR) occurs between Landau levels with a (B)(1/2) dependence. The CR line-width is consistent with a high Dirac fermions mobility of ~3000 cm(2)·V(-1)·s(-1) at 4 K.

Nanobubbles at GPa Pressure under Graphene

We provide direct evidence that irradiation of a graphene membrane on Ir with low-energy Ar ions induces formation of solid noble-gas nanobubbles. Their size can be controlled by thermal treatment, reaching tens of nanometers laterally and height of 1.5 nm upon annealing at 1080 °C. Ab initio calculations show that Ar nanobubbles are subject to pressures reaching tens of GPa, their formation being driven by minimization of the energy cost of film distortion and loss of adhesion.

Enhanced crystallinity of epitaxial graphene grown on hexagonal SiC surface with molybdenum plate capping

The crystallinity of epitaxial graphene (EG) grown on a Hexagonal-SiC substrate is found to be enhanced greatly by capping the substrate with a molybdenum plate (Mo-plate) during vacuum annealing. The crystallinity enhancement of EG layer grown with Mo-plate capping is confirmed by the significant change of measured Raman spectra, compared to the spectra for no capping. Mo-plate capping is considered to induce heat accumulation on SiC surface by thermal radiation mirroring and raise Si partial pressure near surface by confining the sublimated Si atoms between SiC substrate and Mo-plate, which would be the essential contributors of crystallinity enhancement.

Confinement effects of levitons in a graphene cosmology laboratory

Full confinement of the leviton/anti-leviton can occur inside a potential. Bifurcations in the wavefunction show the onset of internal vortex structures. Transmission and reflection occurs as a function of a leviton energy/potential barrier ratio.

Graphene levitons and anti-levitons in magnetic fields

The leviton is an electron or hole wavepacket that rides the surface of the Fermi sea. When a series of Lorentzian or Gaussian time dependent pulses are applied to an ultracold system a soliton-like excitation with only one electron and no localised hole emerges. Graphene is a unique system where the Fermi surface may arise from a Dirac point and therewith the levitons character may display many interesting features. For example, the leviton formation may be associated with a chiral anomaly, and inside a single potential step an anti-leviton forms. We show that the application of weak magnetic fields may switch on and off the leviton Klein tunnelling. Also, in a moderate field negative refraction arises along a curved trajectory, whereas with a stronger field a new elementary excitation - the levity vortex - in the reflected wavefunction occurs. Herein we describe these phenomena in detail along with a complete explanation of the transmission of graphene levitons at a step potential in terms of the probability densities and a series of phase diagrams and the tunnelling times.