Patterning of light-extraction nanostructures on sapphire substrates using nanoimprint and ICP etching with different masking materials

Wafer-scale high aspect-ratio sapphire periodic nanostructures fabricated by self-modulated femtosecond laser hybrid technology

Sapphire nanostructures with a high aspect-ratio have broad applications in photoelectronic devices, which are difficult to be fabricated due to the properties of high transparency and hardness, remarkable thermal and chemical stability. Although the phenomenon of laser-induced periodic surface structures (LIPSS) provides an extraordinary idea for surface nanotexturing, it suffers from the limitation of the small depth of the nanostructures. Here, a high-efficiency self-modulated femtosecond laser hybrid technology was proposed to fabricate nanostructures with high aspect-ratios on the sapphire surface, which was combined backside laser modification and subsequent wet etching. Due to the refractive index mismatch, the focal length of the laser could be elongated when focused inside sapphire. Thus, periodic nanostructures with high-quality aspect ratios of more than 55 were prepared on the sapphire surface by using this hybrid fabrication method. As a proof-of-concept, wafer-scale (∼2 inches) periodic nanostripes with a high aspect-ratio were realized on a sapphire surface, which possesses unique diffractive properties compared to typical shallow gratings. The results indicate that the self-modulated femtosecond laser hybrid technology is an efficient and versatile technique for producing high aspect-ratio nanostructures on hard and transparent materials, which would propel the potential applications in optics and surface engineering, sensing, etc.

Nanophotonic crystals on unpolished sapphire substrates for deep-UV light-emitting diodes

A new method has been established and employed to create a random nanophotonic crystal (NPhC) structure without photolithography on the unpolished side of a single-side-polished sapphire substrate. This nano structure has potential use in enhancing the light-extraction efficiency (LEE) of deep ultraviolet light-emitting diodes (DUV-LEDs), and has never been built for DUV-LED applications before. Two mask layers in the nano scale (Au and SiO2) were used to create the NPhC and observed using scanning electron microscopy to have an average height of 400 nm and various sizes from 10 to 200 nm. Finally, a conventional DUV-LED and a DUV-LED device with NPhC were simulated using 2D Lumerical Finite-Difference Time-Domain (FDTD) for comparison. The results show that the LEE of the DUV-LED device with this NPhC integrated was significantly directly enhanced by up to 46% and 90% for TE and TM modes, respectively, compared to the conventional DUV-LED device. Thus, this NPhC is believed to be a new, key technique to enhance the LEE of DUV-LEDs.

Optimal design of an antireflection coating structure for enhancing the energy-conversion efficiency of a silicon nanostructure solar cell

In this paper, we present our investigation of the optical and electrical characteristics of silicon solar cells using silicon nanowire, silicon nanocone, silicon nanopillar, and silicon nanopillar/silicon nitride structures, which were obtained by the Ag-assisted electroless etching method and ICP etching with extreme ultraviolet lithography. We introduced the formation mechanism for four kinds of solar cells. We simulated the absorption of four structures for different parameters. Furthermore, we also performed current density-voltage (J-V) characterization of the samples with silicon nitride, which exhibited an improvement of the power conversion efficiency (PCE) in contrast to the samples without silicon nitride. It was found that the properties of trapping light for silicon nitride had a prominent impact on the improvement of the PCE in the silicon nanopillar solar cells.

The polarization modulation and fabrication method of two dimensional silica photonic crystals based on UV nanoimprint lithography and hot imprint

Based on a silica sol-gel technique, highly-structurally ordered silica photonic structures were fabricated by UV lithography and hot manual nanoimprint efforts, which makes large-scale fabrication of silica photonic crystals easy and results in low-cost. These photonic structures show perfect periodicity, smooth and flat surfaces and consistent aspect ratios, which are checked by scanning electron microscopy (SEM) and atomic force microscopy (AFM). In addition, glass substrates with imprinted photonic nanostructures show good diffraction performance in both transmission and reflection mode. Furthermore, the reflection efficiency can be enhanced by 5 nm Au nanoparticle coating, which does not affect the original imprint structure. Also the refractive index and dielectric constant of the imprinted silica is close to that of the dielectric layer in nanodevices. In addition, the polarization characteristics of the reflected light can be modulated by stripe nanostructures through changing the incident light angle. The experimental findings match with theoretical results, making silica photonic nanostructures functional integration layers in many optical or optoelectronic devices, such as LED and microlasers to enhance the optical performance and modulate polarization properties in an economical and large-scale way.