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Cai Y, Wang Z, Wan J, Li J, Guo R, Ager JW, Javey A, Zheng H, Jiang J, Wu J. Ion diffusion retarded by diverging chemical susceptibility. Nat Commun 2024; 15:5814. [PMID: 38987527 PMCID: PMC11237041 DOI: 10.1038/s41467-024-50213-3] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/29/2024] [Accepted: 07/03/2024] [Indexed: 07/12/2024] Open
Abstract
For first-order phase transitions, the second derivatives of Gibbs free energy (specific heat and compressibility) diverge at the transition point, resulting in an effect known as super-elasticity along the pressure axis, or super-thermicity along the temperature axis. Here we report a chemical analogy of these singularity effects along the atomic doping axis, where the second derivative of Gibbs free energy (chemical susceptibility) diverges at the transition point, leading to an anomalously high energy barrier for dopant diffusion in co-existing phases, an effect we coin as super-susceptibility. The effect is realized in hydrogen diffusion in vanadium dioxide (VO2) with a metal-insulator transition (MIT). We show that hydrogen faces three times higher energy barrier and over one order of magnitude lower diffusivity when it diffuses across a metal-insulator domain wall in VO2. The additional energy barrier is attributed to a volumetric energy penalty that the diffusers need to pay for the reduction of latent heat. The super-susceptibility and resultant retarded atomic diffusion are expected to exist universally in all phase transformations where the transformation temperature is coupled to chemical composition, and inspires new ways to engineer dopant diffusion in phase-coexisting material systems.
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Affiliation(s)
- Yuhang Cai
- Department of Materials Science and Engineering, University of California, Berkeley, Berkeley, CA, 94720, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
| | - Zhaowu Wang
- School of Science, Hebei University of Technology, Tianjin, 300401, China
- National Laboratory of Solid State Microstructures, Nanjing University, Nanjing, 210093, China
| | - Jiawei Wan
- Department of Materials Science and Engineering, University of California, Berkeley, Berkeley, CA, 94720, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
| | - Jiachen Li
- Department of Materials Science and Engineering, University of California, Berkeley, Berkeley, CA, 94720, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
| | - Ruihan Guo
- Department of Materials Science and Engineering, University of California, Berkeley, Berkeley, CA, 94720, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
| | - Joel W Ager
- Department of Materials Science and Engineering, University of California, Berkeley, Berkeley, CA, 94720, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
| | - Ali Javey
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
- Department of Electrical Engineering and Computer Science, University of California, Berkeley, Berkeley, CA, 94720, USA
| | - Haimei Zheng
- Department of Materials Science and Engineering, University of California, Berkeley, Berkeley, CA, 94720, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
| | - Jun Jiang
- Key Laboratory of Precision and Intelligent Chemistry, School of Chemistry and Materials Science, University of Science and Technology of China, Hefei, 230026, Anhui, China
| | - Junqiao Wu
- Department of Materials Science and Engineering, University of California, Berkeley, Berkeley, CA, 94720, USA.
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA.
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Deng S, Yu H, Park TJ, Islam AN, Manna S, Pofelski A, Wang Q, Zhu Y, Sankaranarayanan SK, Sengupta A, Ramanathan S. Selective area doping for Mott neuromorphic electronics. SCIENCE ADVANCES 2023; 9:eade4838. [PMID: 36930716 PMCID: PMC10022892 DOI: 10.1126/sciadv.ade4838] [Citation(s) in RCA: 6] [Impact Index Per Article: 6.0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 08/18/2022] [Accepted: 02/16/2023] [Indexed: 06/18/2023]
Abstract
The cointegration of artificial neuronal and synaptic devices with homotypic materials and structures can greatly simplify the fabrication of neuromorphic hardware. We demonstrate experimental realization of vanadium dioxide (VO2) artificial neurons and synapses on the same substrate through selective area carrier doping. By locally configuring pairs of catalytic and inert electrodes that enable nanoscale control over carrier density, volatility or nonvolatility can be appropriately assigned to each two-terminal Mott memory device per lithographic design, and both neuron- and synapse-like devices are successfully integrated on a single chip. Feedforward excitation and inhibition neural motifs are demonstrated at hardware level, followed by simulation of network-level handwritten digit and fashion product recognition tasks with experimental characteristics. Spatially selective electron doping opens up previously unidentified avenues for integration of emerging correlated semiconductors in electronic device technologies.
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Affiliation(s)
- Sunbin Deng
- School of Materials Engineering, Purdue University, West Lafayette, IN 47907, USA
| | - Haoming Yu
- School of Materials Engineering, Purdue University, West Lafayette, IN 47907, USA
| | - Tae Joon Park
- School of Materials Engineering, Purdue University, West Lafayette, IN 47907, USA
| | - A. N. M. Nafiul Islam
- School of Electrical Engineering and Computer Science, The Pennsylvania State University, University Park, PA 16802, USA
| | - Sukriti Manna
- Center for Nanoscale Materials, Argonne National Laboratory, Lemont, IL 60439, USA
- Department of Mechanical and Industrial Engineering, University of Illinois, Chicago, IL 60607, USA
| | - Alexandre Pofelski
- Department of Condensed Matter Physics and Materials Science, Brookhaven National Laboratory, Upton, NY 11973, USA
| | - Qi Wang
- School of Materials Engineering, Purdue University, West Lafayette, IN 47907, USA
| | - Yimei Zhu
- Department of Condensed Matter Physics and Materials Science, Brookhaven National Laboratory, Upton, NY 11973, USA
| | - Subramanian K. R. S. Sankaranarayanan
- Center for Nanoscale Materials, Argonne National Laboratory, Lemont, IL 60439, USA
- Department of Mechanical and Industrial Engineering, University of Illinois, Chicago, IL 60607, USA
| | - Abhronil Sengupta
- School of Electrical Engineering and Computer Science, The Pennsylvania State University, University Park, PA 16802, USA
| | - Shriram Ramanathan
- School of Materials Engineering, Purdue University, West Lafayette, IN 47907, USA
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Guan H, Zhang D, Yang Y, Liu Y, Zhong A, He Q, Qi J, Fan P. A Novel Method for Notable Reducing Phase Transition Temperature of VO 2 Films for Smart Energy Efficient Windows. NANOMATERIALS 2019; 10:nano10010058. [PMID: 31881791 PMCID: PMC7023470 DOI: 10.3390/nano10010058] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.4] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 12/06/2019] [Revised: 12/19/2019] [Accepted: 12/20/2019] [Indexed: 11/23/2022]
Abstract
Although Vanadium dioxide (VO2) has a potential application value for smart energy efficient windows because of its unique phase transition characteristic, there are still many obstacles that need to be overcome. One challenge is to reduce its high transition temperature (ζc = 68 °C) to near room temperature without causing its phase transition performance degradation. In this paper, a novel method was employed that covered a 3 nm ultra-thin heavy Cr-doped VO2 layer on the pure VO2 films. Compared with the as-grown pure VO2, obviously, phase transition temperature decreasing from 59.5 °C to 48.0 °C was observed. Different from previous doping techniques, almost no phase transition performance weakening occurred. Based on the microstructure and electrical parameters measurement results, the mechanism of ζc reducing was discussed. The upper ultra-thin heavy Cr-doped layer may act as the induced role of phase transition. With temperature increasing, carrier concentration increased from the upper heavy Cr-doped layer to the bottom pure VO2 layer by diffusion, and induced the carrier concentration reach to phase transition critical value from top to bottom gradually. The present method is not only a simpler technique, but also avoids expensive alloy targets.
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Hou Y, Xiao R, Tong X, Dhuey S, Yu D. In Situ Visualization of Fast Surface Ion Diffusion in Vanadium Dioxide Nanowires. NANO LETTERS 2017; 17:7702-7709. [PMID: 29131965 DOI: 10.1021/acs.nanolett.7b03832] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/15/2023]
Abstract
We investigate in situ ion diffusion in vanadium dioxide (VO2) nanowires (NWs) by using photocurrent imaging. Alkali metal ions are injected into a NW segment via ionic liquid gating and are shown to diffuse along the NW axis. The visualization of ion diffusion is realized by spatially resolved photocurrent measurements, which detect the charge carrier density change associated with the ion incorporation. Diffusion constants are determined to be on the order of 10-10 cm2/s for both Li+ and Na+ ions at room temperature, while H+ diffuses much slower. The ion diffusion is also found to occur mainly at the surface of the NWs, as metal contacts can effectively block the ion diffusion. This novel method of visualizing ion distribution is expected to be applied to study ion diffusion in a broad range of materials, providing key insights on phase transition electronics and energy storage applications.
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Affiliation(s)
- Yasen Hou
- Department of Physics, University of California , Davis, California 95616, United States
| | - Rui Xiao
- Department of Physics, University of California , Davis, California 95616, United States
| | - Xin Tong
- School of Physics, Peking University , Beijing 100871, People's Republic of China
| | - Scott Dhuey
- The Molecular Foundry, Lawrence Berkeley National Laboratory , Berkeley, California 94720, United States
| | - Dong Yu
- Department of Physics, University of California , Davis, California 95616, United States
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Passarello D, Altendorf SG, Jeong J, Rettner C, Arellano N, Topuria T, Samant MG, Parkin SSP. Evidence for Ionic Liquid Gate-Induced Metallization of Vanadium Dioxide Bars over Micron Length Scales. NANO LETTERS 2017; 17:2796-2801. [PMID: 28368120 DOI: 10.1021/acs.nanolett.6b05029] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
It has recently been shown that the metal-insulator transition in vanadium dioxide epitaxial films can be suppressed and the material made metallic to low temperatures by ionic liquid gating due to migration of oxygen. The gating is only possible on certain crystal facets where volume channels along the VO2's rutile c-axis intersect the surface. Here, we fabricate bars with the c-axis in plane and oriented parallel to or perpendicular to the length of the bars. We show that only bars with the c-axis perpendicular to the bars, for which the volume channels are accessible from the sides of the bar, can be metallized by ionic liquid gating. Moreover, we find that bars up to at least 0.5 μm wide can be fully gated, demonstrating the possibility of the electric field induced migration of oxygen over very long distances, ∼5 times longer than previously observed.
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Affiliation(s)
- Donata Passarello
- IBM Research - Almaden , San Jose, California 95120, United States
- Max Plank Institute for Microstructure Physics , Weinberg 2, 06120 Halle (Saale), Germany
| | - Simone G Altendorf
- Max Plank Institute for Microstructure Physics , Weinberg 2, 06120 Halle (Saale), Germany
| | - Jaewoo Jeong
- IBM Research - Almaden , San Jose, California 95120, United States
| | - Charles Rettner
- IBM Research - Almaden , San Jose, California 95120, United States
| | - Noel Arellano
- IBM Research - Almaden , San Jose, California 95120, United States
| | - Teya Topuria
- IBM Research - Almaden , San Jose, California 95120, United States
| | - Mahesh G Samant
- IBM Research - Almaden , San Jose, California 95120, United States
| | - Stuart S P Parkin
- IBM Research - Almaden , San Jose, California 95120, United States
- Max Plank Institute for Microstructure Physics , Weinberg 2, 06120 Halle (Saale), Germany
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