Visualization of one-dimensional diffusion and spontaneous segregation of hydrogen in single crystals of VO2

Ion diffusion retarded by diverging chemical susceptibility

For first-order phase transitions, the second derivatives of Gibbs free energy (specific heat and compressibility) diverge at the transition point, resulting in an effect known as super-elasticity along the pressure axis, or super-thermicity along the temperature axis. Here we report a chemical analogy of these singularity effects along the atomic doping axis, where the second derivative of Gibbs free energy (chemical susceptibility) diverges at the transition point, leading to an anomalously high energy barrier for dopant diffusion in co-existing phases, an effect we coin as super-susceptibility. The effect is realized in hydrogen diffusion in vanadium dioxide (VO2) with a metal-insulator transition (MIT). We show that hydrogen faces three times higher energy barrier and over one order of magnitude lower diffusivity when it diffuses across a metal-insulator domain wall in VO2. The additional energy barrier is attributed to a volumetric energy penalty that the diffusers need to pay for the reduction of latent heat. The super-susceptibility and resultant retarded atomic diffusion are expected to exist universally in all phase transformations where the transformation temperature is coupled to chemical composition, and inspires new ways to engineer dopant diffusion in phase-coexisting material systems.

Selective area doping for Mott neuromorphic electronics

The cointegration of artificial neuronal and synaptic devices with homotypic materials and structures can greatly simplify the fabrication of neuromorphic hardware. We demonstrate experimental realization of vanadium dioxide (VO₂) artificial neurons and synapses on the same substrate through selective area carrier doping. By locally configuring pairs of catalytic and inert electrodes that enable nanoscale control over carrier density, volatility or nonvolatility can be appropriately assigned to each two-terminal Mott memory device per lithographic design, and both neuron- and synapse-like devices are successfully integrated on a single chip. Feedforward excitation and inhibition neural motifs are demonstrated at hardware level, followed by simulation of network-level handwritten digit and fashion product recognition tasks with experimental characteristics. Spatially selective electron doping opens up previously unidentified avenues for integration of emerging correlated semiconductors in electronic device technologies.

A Novel Method for Notable Reducing Phase Transition Temperature of VO2 Films for Smart Energy Efficient Windows

Although Vanadium dioxide (VO₂) has a potential application value for smart energy efficient windows because of its unique phase transition characteristic, there are still many obstacles that need to be overcome. One challenge is to reduce its high transition temperature (ζ_c = 68 °C) to near room temperature without causing its phase transition performance degradation. In this paper, a novel method was employed that covered a 3 nm ultra-thin heavy Cr-doped VO₂ layer on the pure VO₂ films. Compared with the as-grown pure VO₂, obviously, phase transition temperature decreasing from 59.5 °C to 48.0 °C was observed. Different from previous doping techniques, almost no phase transition performance weakening occurred. Based on the microstructure and electrical parameters measurement results, the mechanism of ζ_c reducing was discussed. The upper ultra-thin heavy Cr-doped layer may act as the induced role of phase transition. With temperature increasing, carrier concentration increased from the upper heavy Cr-doped layer to the bottom pure VO₂ layer by diffusion, and induced the carrier concentration reach to phase transition critical value from top to bottom gradually. The present method is not only a simpler technique, but also avoids expensive alloy targets.

In Situ Visualization of Fast Surface Ion Diffusion in Vanadium Dioxide Nanowires

We investigate in situ ion diffusion in vanadium dioxide (VO₂) nanowires (NWs) by using photocurrent imaging. Alkali metal ions are injected into a NW segment via ionic liquid gating and are shown to diffuse along the NW axis. The visualization of ion diffusion is realized by spatially resolved photocurrent measurements, which detect the charge carrier density change associated with the ion incorporation. Diffusion constants are determined to be on the order of 10^-10 cm²/s for both Li⁺ and Na⁺ ions at room temperature, while H⁺ diffuses much slower. The ion diffusion is also found to occur mainly at the surface of the NWs, as metal contacts can effectively block the ion diffusion. This novel method of visualizing ion distribution is expected to be applied to study ion diffusion in a broad range of materials, providing key insights on phase transition electronics and energy storage applications.

Evidence for Ionic Liquid Gate-Induced Metallization of Vanadium Dioxide Bars over Micron Length Scales

It has recently been shown that the metal-insulator transition in vanadium dioxide epitaxial films can be suppressed and the material made metallic to low temperatures by ionic liquid gating due to migration of oxygen. The gating is only possible on certain crystal facets where volume channels along the VO₂'s rutile c-axis intersect the surface. Here, we fabricate bars with the c-axis in plane and oriented parallel to or perpendicular to the length of the bars. We show that only bars with the c-axis perpendicular to the bars, for which the volume channels are accessible from the sides of the bar, can be metallized by ionic liquid gating. Moreover, we find that bars up to at least 0.5 μm wide can be fully gated, demonstrating the possibility of the electric field induced migration of oxygen over very long distances, ∼5 times longer than previously observed.