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Kim J, Youn S, Lee D, Kim CW, Moon H, Chung SH, Kim H, Kim DH, Kim S, Roh JW, Bang J, Lee W. Electrical transport phenomena in two-dimensional metallic 2H-NbSe 2: an experimental and theoretical study. NANOSCALE 2024. [PMID: 39530203 DOI: 10.1039/d4nr03369h] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/16/2024]
Abstract
Two-dimensional (2D) metallic transition metal dichalcogenides (TMDCs) have attracted extensive interest in various fields owing to their unique electronic properties. However, studies on their transport properties and the modulation of these properties based on their band structure are limited. Herein, we studied the transport phenomena in 2D metallic 2H-NbSe2 using experimental and theoretical approaches. The transport properties, including electrical conductivity (σ) and Seebeck coefficient (S), of mechanically exfoliated 2H-NbSe2 nanosheets were measured. We observed field effect-dependent variations in σ and S of the 2H-NbSe2 nanosheets. Theoretical calculations of the electronic band structures and estimations of the transport properties of 2D 2H-NbSe2 crystals were conducted to verify and explain the experimental results. The superconducting transition temperature of the exfoliated NbSe2 nanosheets validated the reliability of the sample preparation procedures and indicated the high quality of the samples. Our findings provide a basis for understanding the electrical properties of metallic TMDCs intended for various applications.
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Affiliation(s)
- Jeongmin Kim
- Division of Nanotechnology, DGIST, 333 Techno Jungang-daero, Hyeonpung-eup, Dalseong-gun, Daegu 42988, Republic of Korea
| | - Seonhye Youn
- Department of Materials Science and Engineering, Yonsei University, 50 Yonsei-ro, Seodaemoon-gu, Seoul, 03722, Republic of Korea.
| | - Damin Lee
- Division of Nanotechnology, DGIST, 333 Techno Jungang-daero, Hyeonpung-eup, Dalseong-gun, Daegu 42988, Republic of Korea
- School of Nano Materials Engineering, Kyungpook National University, Gyeongsangbuk-do 37224, Republic of Korea
| | - Chan Woong Kim
- School of Nano Materials Engineering, Kyungpook National University, Gyeongsangbuk-do 37224, Republic of Korea
| | - Hongjae Moon
- Department of Materials Science and Engineering, Yonsei University, 50 Yonsei-ro, Seodaemoon-gu, Seoul, 03722, Republic of Korea.
| | - Seok-Hwan Chung
- Division of Nanotechnology, DGIST, 333 Techno Jungang-daero, Hyeonpung-eup, Dalseong-gun, Daegu 42988, Republic of Korea
| | - Hoyoung Kim
- School of Nano Materials Engineering, Kyungpook National University, Gyeongsangbuk-do 37224, Republic of Korea
| | - Dong Hwan Kim
- Division of Nanotechnology, DGIST, 333 Techno Jungang-daero, Hyeonpung-eup, Dalseong-gun, Daegu 42988, Republic of Korea
| | - Sumin Kim
- Department of Magnetic Materials, Korea Institute of Materials Science, Changwon 51508, South Korea
| | - Jong Wook Roh
- School of Nano Materials Engineering, Kyungpook National University, Gyeongsangbuk-do 37224, Republic of Korea
| | - Joonho Bang
- School of Materials Science and Engineering, Gyeongsang National University, Jinju 52828, South Korea.
- Department of Materials Engineering and Convergence Technology, Gyeongsang National University, Jinju 52828, South Korea
| | - Wooyoung Lee
- Department of Materials Science and Engineering, Yonsei University, 50 Yonsei-ro, Seodaemoon-gu, Seoul, 03722, Republic of Korea.
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Ni X, Li H, Brédas JL. Organic self-assembled monolayers on superconducting NbSe 2: interfacial electronic structure and energetics. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2022; 34:294003. [PMID: 35483349 DOI: 10.1088/1361-648x/ac6b75] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/16/2022] [Accepted: 04/28/2022] [Indexed: 06/14/2023]
Abstract
While organic self-assembled monolayers (SAMs) have been widely used to modify the work function of metal and metal-oxide surfaces, their application to tune the critical temperature of a superconductor has only been considered recently when SAMs were deposited on NbSe2monolayers (Calavalle et al 2021Nano Lett.21136-143). Here, we describe the results of density functional theory calculations performed on the experimentally reported organic/NbSe2systems. Our objectives are: (i) to determine how the organic layers impact the NbSe2work function and electronic density of states; (ii) to understand the possible correlation with the experimental variations in superconducting behavior upon SAM deposition. We find that, upon adsorption of the organic monolayers, the work-function modulation induced by the SAM and interface dipoles is consistent with the experimental results. However, there occurs no significant difference in the electronic density of states near the Fermi level, a consequence of the absence of any charge transfer across the organic/NbSe2interfaces. Therefore, our results indicate that it is not a SAM-induced tuning of the NbSe2density of states near the Fermi level that leads to the tuning of the superconducting critical temperature. This calls for further explorations, both experimentally and theoretically, of the mechanism underlying the superconducting critical temperature variation upon formation of SAM/NbSe2interfaces.
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Affiliation(s)
- Xiaojuan Ni
- Department of Chemistry and Biochemistry, The University of Arizona, Tucson, AZ 85721-0088, United States of America
| | - Hong Li
- Department of Chemistry and Biochemistry, The University of Arizona, Tucson, AZ 85721-0088, United States of America
| | - Jean-Luc Brédas
- Department of Chemistry and Biochemistry, The University of Arizona, Tucson, AZ 85721-0088, United States of America
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Boubeche M, Wang N, Sun J, Yang P, Zeng L, Luo S, He Y, Yu J, Wang M, Cheng J, Luo H. Superconducting dome associated with the suppression and re-emergence of charge density wave states upon sulfur substitution in CuIr 2Te 4chalcogenides. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2022; 34:205602. [PMID: 35226884 DOI: 10.1088/1361-648x/ac594c] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/14/2021] [Accepted: 02/28/2022] [Indexed: 06/14/2023]
Abstract
We report the path from the charge density wave (CDW)-bearing superconductor CuIr2Te4to the metal insulator transition (MIT)-bearing compound CuIr2S4by chemical alloying with the gradual substitution of S for Te. The evolution of structural and physical properties of the CuIr2Te4-xSx(0 ⩽x⩽ 4) polycrystalline system is systemically examined. The x-ray diffraction (XRD) results imply CuIr2Te4-xSx(0 ⩽x⩽ 0.5) crystallizes in a NiAs defected trigonal structure, whereas it adapts to the cubic spinel structure for 3.6 ⩽x⩽ 4 and it is a mixed phase in the doping range of 0.5 <x< 3.6. Unexpectedly, the resistivity and magnetization measurements reveal that small-concentration S substitution for Te can suppress the CDW transition, but it reappears aroundx= 0.2, and the CDW transition temperature enhances clearly asxaugments for 0.2 ⩽x⩽ 0.5. Besides, the superconducting critical temperature (Tc) first increases with S doping content and then decreases after reaching a maximumTc= 2.82 K for CuIr2Te3.85S0.15. MIT order has been observed in the spinel region (3.6 ⩽x⩽ 4) associated withTMIincreasing withxincreasing. Finally, the rich electronic phase diagram of temperature versusxfor this CuIr2Te4-xSxsystem is assembled, where the superconducting dome is associated with the suppression and re-emergence of CDW as well as MIT states at the end upon sulfur substitution in the CuIr2Te4-xSxchalcogenides.
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Affiliation(s)
- Mebrouka Boubeche
- School of Materials Science and Engineering, State Key Laboratory of Optoelectronic Materials and Technologies, Key Lab of Polymer Composite and Functional Materials, Guangzhou Key Laboratory of Flexible Electronic Materials and Wearable Devices, Sun Yat-Sen University, No. 135, Xingang Xi Road, Guangzhou 510275, People's Republic of China
| | - Ningning Wang
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences and School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100190, People's Republic of China
| | - Jianping Sun
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences and School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100190, People's Republic of China
| | - Pengtao Yang
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences and School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100190, People's Republic of China
| | - Lingyong Zeng
- School of Materials Science and Engineering, State Key Laboratory of Optoelectronic Materials and Technologies, Key Lab of Polymer Composite and Functional Materials, Guangzhou Key Laboratory of Flexible Electronic Materials and Wearable Devices, Sun Yat-Sen University, No. 135, Xingang Xi Road, Guangzhou 510275, People's Republic of China
| | - Shaojuan Luo
- School of Chemical Engineering and Light Industry, Guangdong University of Technology, Guangzhou 510006, People's Republic of China
| | - Yiyi He
- School of Materials Science and Engineering, State Key Laboratory of Optoelectronic Materials and Technologies, Key Lab of Polymer Composite and Functional Materials, Guangzhou Key Laboratory of Flexible Electronic Materials and Wearable Devices, Sun Yat-Sen University, No. 135, Xingang Xi Road, Guangzhou 510275, People's Republic of China
| | - Jia Yu
- Center for Neutron Science and Technology, School of Physics, Sun Yat-Sen University, Guangzhou 510275, People's Republic of China
| | - Meng Wang
- Center for Neutron Science and Technology, School of Physics, Sun Yat-Sen University, Guangzhou 510275, People's Republic of China
| | - Jinguang Cheng
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences and School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100190, People's Republic of China
| | - Huixia Luo
- School of Materials Science and Engineering, State Key Laboratory of Optoelectronic Materials and Technologies, Key Lab of Polymer Composite and Functional Materials, Guangzhou Key Laboratory of Flexible Electronic Materials and Wearable Devices, Sun Yat-Sen University, No. 135, Xingang Xi Road, Guangzhou 510275, People's Republic of China
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Xu Z, Yang H, Song X, Chen Y, Yang H, Liu M, Huang Z, Zhang Q, Sun J, Liu L, Wang Y. Topical review: recent progress of charge density waves in 2D transition metal dichalcogenide-based heterojunctions and their applications. NANOTECHNOLOGY 2021; 32:492001. [PMID: 34450606 DOI: 10.1088/1361-6528/ac21ed] [Citation(s) in RCA: 12] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/21/2021] [Accepted: 08/27/2021] [Indexed: 06/13/2023]
Abstract
Charge density wave (CDW) is an intriguing physical phenomenon especially found in two-dimensional (2D) layered systems such as transition-metal dichalcogenides (TMDs). The study of CDW is vital for understanding lattice modification, strongly correlated electronic behaviors, and other related physical properties. This paper gives a review of the recent studies on CDW emerging in 2D TMDs. First, a brief introduction and the main mechanisms of CDW are given. Second, the interplay between CDW patterns and the related unique electronic phenomena (superconductivity, spin, and Mottness) is elucidated. Then various manipulation methods such as doping, applying strain, local voltage pulse to induce the CDW change are discussed. Finally, examples of the potential application of devices based on CDW materials are given. We also discuss the current challenge and opportunities at the frontier in this research field.
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Affiliation(s)
- Ziqiang Xu
- School of Integrated Circuits and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology, Beijing, People's Republic of China
| | - Huixia Yang
- School of Integrated Circuits and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology, Beijing, People's Republic of China
| | - Xuan Song
- School of Integrated Circuits and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology, Beijing, People's Republic of China
| | - Yaoyao Chen
- School of Integrated Circuits and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology, Beijing, People's Republic of China
| | - Han Yang
- School of Integrated Circuits and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology, Beijing, People's Republic of China
| | - Meng Liu
- School of Integrated Circuits and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology, Beijing, People's Republic of China
| | - Zeping Huang
- School of Integrated Circuits and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology, Beijing, People's Republic of China
| | - Quanzhen Zhang
- School of Integrated Circuits and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology, Beijing, People's Republic of China
| | - Jiatao Sun
- School of Integrated Circuits and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology, Beijing, People's Republic of China
| | - Liwei Liu
- School of Integrated Circuits and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology, Beijing, People's Republic of China
| | - Yeliang Wang
- School of Integrated Circuits and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology, Beijing, People's Republic of China
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Bai C, Yang Y. Signatures of nontrivial Rashba metal states in a transition metal dichalcogenides Josephson junction. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2020; 32:465302. [PMID: 32759477 DOI: 10.1088/1361-648x/abace4] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/09/2020] [Accepted: 08/06/2020] [Indexed: 06/11/2023]
Abstract
Nontrivial Rashba metal states in conventional semiconductor materials generated by both Rashba spin-orbit coupling and ferromagnetic exchange coupling coexisting were recently predicted and exploited. Single layered transition metal dichalcogenides (TMDC) featuring those states and their potential applications have been less focused. We find that, in the materials with Rashba spin-orbit coupling only, nontrivial Rashba metallic states can be manipulated by an external gate voltage. Based on extensive numerical simulations, the relationships between the supercurrent and nontrivial Rashba metallic states in the TMDC Josephson junction have been investigated. It is shown that, in the absence of the Rashba spin-orbit coupling, the critical supercurrent exhibits a stark difference between normal Rashba metal state and anomalous Rashba metal state in the finite junction as compared to the case of the short junction. While in the case of the finite Rashba spin-orbit coupling, the critical supercurrent demonstrates a reentrant behavior when Fermi level sweeps from anomalous Rashba metal state to Rashba ring metal state. Intriguingly, not only at the conversion of the nontrivial Rashba metallic states but also in the Rashba ring metal state the reentrant behavior exhibits again, which could be well explained by the mixing of spin-triplet Cooper pairs with spin-singlet Cooper pairs in Ising superconductor. Such a reentrant effect offers a new way to detect Ising superconductivity based on the TMDC systems. Meanwhile our study also clarified that the nontrivial Rashba metallic state plays an important role in controlling the supercurrent in the TMDC Josephson junction, which is useful for designing future superconducting devices.
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Affiliation(s)
- Chunxu Bai
- College of Physics and Electronic Engineering, Xinyang Normal University, Xinyang, 464000, People's Republic of China
| | - Yanling Yang
- College of Physics and Electronic Engineering, Xinyang Normal University, Xinyang, 464000, People's Republic of China
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Yan D, Wang S, Lin Y, Wang G, Zeng Y, Boubeche M, He Y, Ma J, Wang Y, Yao DX, Luo H. NbSeTe-a new layered transition metal dichalcogenide superconductor. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2020; 32:025702. [PMID: 31546238 DOI: 10.1088/1361-648x/ab46d0] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Transition metal dichalcogenides (TMDCs) usually exhibit layered polytypic structures due to the weak interlayer coupling. 2H-NbSe2 is one of the most widely studied in the pristine TMDC family due to its high superconducting transition temperature (T c = 7.3 K) and the occurrence of a charge-density wave (CDW) order below 33 K. The coexistence of CDW with superconductivity poses an intriguing open question about the relationship between Fermi surface nesting and Cooper pairing. Past studies of this issue have mostly been focused on doping 2H-NbSe2 by 3d transition metals without significantly changing its crystal structure. Here we replaced the Se by Te in 2H-NbSe2 in order to design a new 1T polytype layered TMDC NbSeTe, which adopts a trigonal structure with space group P [Formula: see text] m1. We successfully grew large size and high-quality single crystals of 1T-NbSeTe via the vapor transport method using I 2 as the transport agent. Temperature-dependent resistivity and specific heat data revealed a bulk T c at 1.3 K, which is the first observation of superconductivity in pure 1T-NbSeTe phase. This compound enlarged the family of superconducting TMDCs and provides an opportunity to study the interplay between CDW and superconductivity in the trigonal structure.
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Affiliation(s)
- Dong Yan
- School of Material Science and Engineering and Key Lab of Polymer Composite & Functional Materials, Sun Yat-Sen University, No. 135, Xingang Xi Road, Guangzhou 510275, People's Republic of China
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8
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Recent Advances in Two-Dimensional Materials with Charge Density Waves: Synthesis, Characterization and Applications. CRYSTALS 2017. [DOI: 10.3390/cryst7100298] [Citation(s) in RCA: 34] [Impact Index Per Article: 4.9] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/16/2022]
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Pervin R, Krishnan M, Rana AK, Kannan M, Arumugam S, Shirage PM. Enhancement of superconducting critical current density by Fe impurity substitution in NbSe 2 single crystals and the vortex pinning mechanism. Phys Chem Chem Phys 2017; 19:11230-11238. [PMID: 28405663 DOI: 10.1039/c7cp00784a] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
Magnetization measurements have been used to determine the effect of magnetic impurities (Fe) on the Larkin-Ovchinnikov (LO) 3D collective pinning model in NbSe2 single crystals. Upon increasing the concentration of Fe impurities, the superconducting critical current density enhances appreciably compared to pure NbSe2 reflecting the fact that the addition of magnetic impurities assists in improving the practical applicability of NbSe2. The random pinning potential that is introduced by the Fe impurities also shows a considerable change in the interaction between the vortices and the core region, resulting in a competitive nature of single vortex, small bundle and large bundle pinning regimes in the H-T phase diagram. The intrinsic disorder in pure NbSe2 single crystals shows δTc flux pinning; however, the extrinsic disorder created by Fe atoms in NbSe2 shows δl flux pinning. Furthermore, the field dependence of the pinning force on both NbSe2 and Fe-incorporated NbSe2 represents the existence of point pinning and the surface pinning mechanism with a broadening of the fp curves in the Fe-incorporated single crystals.
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Affiliation(s)
- Rukshana Pervin
- Discipline of Metallurgy Engineering and Materials Science & Physics, Indian Institute of Technology Indore, Simrol Campus, Khandwa road, Indore 453552, India.
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Gupta R, Paramanik UB, Ramakrishnan S, Rajeev KP, Hossain Z. Coexistence of superconductivity and a charge density wave in LaPt2(Si1-x Ge x )2 (0 ⩽ x ⩽ 0.5). JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2016; 28:195702. [PMID: 27094445 DOI: 10.1088/0953-8984/28/19/195702] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/05/2023]
Abstract
Interplay between a charge density wave (CDW) and superconductivity in LaPt2(Si1-x Ge x )2 has been studied by electrical transport and magnetic measurements. LaPt2Si2 crystallizes in CaBe2Ge2 type structure which shows a first order structural phase transition from tetragonal to orthorhombic accompanied by a CDW transition at 112 K and superconducting transition at around 1.22 K as confirmed by temperature dependence of resistivity and magnetic measurements. For 2[Formula: see text] doping of germanium, while the CDW temperature T CDW decreases, the superconducting transition temperature T C shows an increase. T CDW increases for 5[Formula: see text] doping of germanium and the superconducting transition decreases. These findings demonstrate the competing nature of a CDW and superconductivity.
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Affiliation(s)
- Ritu Gupta
- Department of Physics, Indian Institute of Technology, Kanpur 208016, India
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Chatterjee U, Zhao J, Iavarone M, Di Capua R, Castellan JP, Karapetrov G, Malliakas CD, Kanatzidis MG, Claus H, Ruff JPC, Weber F, van Wezel J, Campuzano JC, Osborn R, Randeria M, Trivedi N, Norman MR, Rosenkranz S. Emergence of coherence in the charge-density wave state of 2H-NbSe2. Nat Commun 2015; 6:6313. [PMID: 25687135 PMCID: PMC4339883 DOI: 10.1038/ncomms7313] [Citation(s) in RCA: 38] [Impact Index Per Article: 4.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/28/2014] [Accepted: 01/19/2015] [Indexed: 12/02/2022] Open
Abstract
A charge-density wave (CDW) state has a broken symmetry described by a complex order parameter with an amplitude and a phase. The conventional view, based on clean, weak-coupling systems, is that a finite amplitude and long-range phase coherence set in simultaneously at the CDW transition temperature Tcdw. Here we investigate, using photoemission, X-ray scattering and scanning tunnelling microscopy, the canonical CDW compound 2H-NbSe2 intercalated with Mn and Co, and show that the conventional view is untenable. We find that, either at high temperature or at large intercalation, CDW order becomes short-ranged with a well-defined amplitude, which has impacts on the electronic dispersion, giving rise to an energy gap. The phase transition at Tcdw marks the onset of long-range order with global phase coherence, leading to sharp electronic excitations. Our observations emphasize the importance of phase fluctuations in strongly coupled CDW systems and provide insights into the significance of phase incoherence in ‘pseudogap’ states. Charge density waves are described by a complex order parameter whose amplitude is expected to vanish at the transition temperature. This study shows that the transition in 2H-NbSe2 is driven by fluctuations of the phase of the order parameter, with a finite amplitude surviving in the disordered state.
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Affiliation(s)
- U Chatterjee
- 1] Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439, USA [2] Department of Physics, University of Virginia, Charlottesville, Virginia 22904, USA
| | - J Zhao
- 1] Department of Physics, University of Virginia, Charlottesville, Virginia 22904, USA [2] Department of Physics, University of Illinois at Chicago, Chicago, Illinois 60607, USA
| | - M Iavarone
- Department of Physics, Temple University, Philadelphia, Pennsylvania 19122, USA
| | - R Di Capua
- Department of Physics, Temple University, Philadelphia, Pennsylvania 19122, USA
| | - J P Castellan
- 1] Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439, USA [2] Institute of Solid State Physics, Karlsruhe Institute of Technology, PO Box 3640, D-76021 Karlsruhe, Germany
| | - G Karapetrov
- Department of Physics, Drexel University, Philadelphia, Pennsylvania 19104, USA
| | - C D Malliakas
- 1] Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439, USA [2] Department of Chemistry, Northwestern University, Evanston, Illinois 60208, USA
| | - M G Kanatzidis
- 1] Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439, USA [2] Department of Chemistry, Northwestern University, Evanston, Illinois 60208, USA
| | - H Claus
- Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439, USA
| | - J P C Ruff
- 1] Advanced Photon Source, Argonne National Laboratory, Argonne, Illinois 60439, USA [2] CHESS, Cornell University, Ithaca, New York 14853, USA
| | - F Weber
- 1] Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439, USA [2] Institute of Solid State Physics, Karlsruhe Institute of Technology, PO Box 3640, D-76021 Karlsruhe, Germany
| | - J van Wezel
- 1] Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439, USA [2] Institute for Theoretical Physics, University of Amsterdam, Tyndall Avenue, 1090 GL Amsterdam, The Netherlands
| | - J C Campuzano
- 1] Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439, USA [2] Department of Physics, University of Illinois at Chicago, Chicago, Illinois 60607, USA
| | - R Osborn
- Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439, USA
| | - M Randeria
- Department of Physics, Ohio State University, Columbus, Ohio 43210, USA
| | - N Trivedi
- Department of Physics, Ohio State University, Columbus, Ohio 43210, USA
| | - M R Norman
- Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439, USA
| | - S Rosenkranz
- Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439, USA
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12
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Chen L, Li C, Tang H, Li H, Liu X, Meng J. First-principles calculations on structural, electronic properties of V-doped 2H-NbSe2. RSC Adv 2014. [DOI: 10.1039/c3ra47237j] [Citation(s) in RCA: 15] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022] Open
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