Molecular doping of blue phosphorene: a first-principles investigation

Strain Effects on the Electronic and Optical Properties of Blue Phosphorene

Monolayer blue phosphorene (BlueP) systems were investigated under biaxial strain range from −10% to +10%. All these systems exhibit excellent stability, accompanying changes in the electronic and optical properties. BlueP becomes metallic at −10% strain and transforms into a direct semiconductor at 10% strain while maintaining indirect semiconductor behaviors at −8% to +8% strain. The bandgap of BlueP decreases linearly with strain, and tensile strain exhibits a more moderate bandgap modulation than compressive strain. The real part of the dielectric function of BlueP is enhanced under compressive strain, while the optical absorption in the visible and the infrared light regions increases significantly under tensile strain. The maximum absorption coefficient of 0.52 ×105/cm occurs at 530 nm with the 10% strain. Our analysis indicates that the semiconductor–metal transition and the indirect–direct bandgap transition are the competition results of the energy states near the Fermi level under a massive strain. The potent compressive strain leads the py orbitals of the conduction band to move downward and pass through the Fermi level at the K point. The robust tensile strain guides the energy states at the Γ point to approach the Fermi level and become the band edges. Our results suggest that the energy storage capacity of BlueP can be significantly improved by compressive strain, while the visible light photocatalytic performance is enhanced by tensile strains of less than 8%. Our works provide a reference for the practical applications of BlueP in photocatalyst, photovoltaic cells, and electronic devices.

Theoretical Study on Electronic, Magnetic and Optical Properties of Non-Metal Atoms Adsorbed onto Germanium Carbide

Nine kinds of non-metal atoms adsorbed into germanium carbide (NM-GeC) systems wereare investigated by first-principles calculations. The results show that the most stable adsorption positions vary with the NM atoms, and C-GeC exhibits the strongest adsorption. The adsorption of NM atoms causes changes in the electronic, optical and magnetic properties of the GeC system. F- and Cl-GeC turn into magnetic metals, P-GeC becomes a half-metal and H- and B-GeC appear as non-magnetic metals. Although C- and O-GeC remain non-magnetic semiconductors, N-GeC presents the behaviors of a magnetic semiconductor. Work function decreases in H-, B- and N-SiC, reaching a minimum of 3.37 eV in H-GeC, which is 78.9% of the pristine GeC. In the visible light region, redshifts occur in the absorption spectrum of C-GeC , with strong absorption in the wavelength range from 400 to 600 nm. Our analysis shows that the magnetism in semiconducting NM-GeC is attributed to the spinning state of the unbonded electrons of the NM atoms. Our study demonstrates the applications of NM-GeC in spintronics, optoelectronics and photovoltaic cells, and it provides a reference for analyzing magnetism in semiconducting NM materials.

Tuning the carrier type and density of monolayer tin selenide via organic molecular doping

Utilizing first-principles calculations, charge transfer doping process of single layer tin selenide (SL-SnSe) via the surface adsorption of various organic molecules was investigated. Effective p-type SnSe, with carrier concentration exceeding 3.59 × 10¹³ cm^-2, was obtained upon adsorption of tetracyanoquinodimethane or 2,3,5,6-tetrafluoro-7,7,8,8-tetracyano-quinodimethane on SL-SnSe due to their lowest unoccupied molecular orbitals acting as shallow acceptor states. While we could not obtain effective n-type SnSe through adsorption of tetrathiafulvalene (TTF) or 1,4,5,8-tetrathianaphthalene on pristine SnSe due to their highest occupied molecular orbitals (HOMO) being far from the conduction band edge of SnSe, this disadvantageous situation can be amended by the introduction of an external electric field perpendicular to the monolayer surface. It is found that Sn_vacwill facilitate charge transfer from TTF to SnSe through introducing an unoccupied gap state just above the HOMO of TTF, thereby partially compensating for the p-type doping effect of Sn_vac. Our results show that both effective p-type and n-type SnSe can be obtained and tuned by charge transfer doping, which is necessary to promote its applications in nanoelectronics, thermoelectrics and optoelectronics.

First principles study on modulating electronic and optical properties with h-BN intercalation in AlN/MoS2heterostructure

The van der Waals (vdW) heterostructures formed by stacking layered two-dimensional materials can improve the performance of materials and provide more applications. In our paper, six configurations of AlN/MoS₂vdW heterostructures were constructed, the most stable structure was obtained by calculating the binding energy. On this basis, the effect of external vertical strain on AlN/MoS₂heterostructure was analyzed, the calculated results show that the optimal interlayer distance was 3.593 Å and the band structure was modulated. Then the h-BN intercalation was inserted into the AlN/MoS₂heterostructure, by fixing the distance between h-BN and AlN or MoS₂, two kinds of models were obtained. Furthermore, the electronic properties of AlN/MoS₂heterostructure can be regulated by adding h-BN intercalation layer and adjusting its position. Finally, the optical properties show that the absorption coefficient of AlN/MoS₂heterostructure exhibits enhancement characteristic compared with that of the individual monolayers. Meantime, compared with AlN/MoS₂, the AlN/h-BN/MoS₂shows a redshift effect and the light absorption peak intensity increased, which indicated that h-BN intercalation layer can be used to regulate the electronic and optical properties of AlN/MoS₂heterostructure.

Electronic and Optical Properties of Atomic-Scale Heterostructure Based on MXene and MN (M = Al, Ga): A DFT Investigation

After the discovery of graphene, a lot of research has been conducted on two-dimensional (2D) materials. In order to increase the performance of 2D materials and expand their applications, two different layered materials are usually combined by van der Waals (vdW) interactions to form a heterostructure. In this work, based on first-principles calculation, some charming properties of the heterostructure constructed by Hf2CO2, AlN and GaN are addressed. The results show that Hf2CO2/AlN and Hf2CO2/GaN vdW heterostructures can keep their original band structure shape and have strong thermal stability at 300 K. In addition, the Hf2CO2/MN heterostructure has I-type band alignment structure, which can be used as a promising light-emitting device material. The charge transfer between the Hf2CO2 and AlN (or GaN) monolayers is 0.1513 (or 0.0414) |e|. The potential of Hf2CO2/AlN and Hf2CO2/GaN vdW heterostructures decreases by 6.445 eV and 3.752 eV, respectively, across the interface. Furthermore, both Hf2CO2/AlN and Hf2CO2/GaN heterostructures have remarkable optical absorption capacity, which further shows the application prospect of the Hf2CO2/MN heterostructure. The study of this work provides theoretical guidance for the design of heterostructures for use as photocatalytic and photovoltaic devices.