The emergence of the local moment molecular spin transistor

The Influence of the Substrate on the Functionality of Spin Crossover Molecular Materials

Spin crossover complexes are a route toward designing molecular devices with a facile readout due to the change in conductance that accompanies the change in spin state. Because substrate effects are important for any molecular device, there are increased efforts to characterize the influence of the substrate on the spin state transition. Several classes of spin crossover molecules deposited on different types of surface, including metallic and non-metallic substrates, are comprehensively reviewed here. While some non-metallic substrates like graphite seem to be promising from experimental measurements, theoretical and experimental studies indicate that 2D semiconductor surfaces will have minimum interaction with spin crossover molecules. Most metallic substrates, such as Au and Cu, tend to suppress changes in spin state and affect the spin state switching process due to the interaction at the molecule-substrate interface that lock spin crossover molecules in a particular spin state or mixed spin state. Of course, the influence of the substrate on a spin crossover thin film depends on the molecular film thickness and perhaps the method used to deposit the molecular film.

Molecular transistors as substitutes for quantum information applications

Applications of quantum information science (QIS) generally rely on the generation and manipulation of qubits. Still, there are ways to envision a device with a continuous readout, but without the entangled states. This concise perspective includes a discussion on an alternative to the qubit, namely the solid-state version of the Mach-Zehnder interferometer, in which the local moments and spin polarization replace light polarization. In this context, we provide some insights into the mathematics that dictates the fundamental working principles of quantum information processes that involve molecular systems with large magnetic anisotropy. Transistors based on such systems lead to the possibility of fabricating logic gates that do not require entangled states. Furthermore, some novel approaches, worthy of some consideration, exist to address the issues pertaining to the scalability of quantum devices, but face the challenge of finding the suitable materials for desired functionality that resemble what is sought from QIS devices.

Dynamics of Spin Crossover Molecular Complexes

We review the current understanding of the time scale and mechanisms associated with the change in spin state in transition metal-based spin crossover (SCO) molecular complexes. Most time resolved experiments, performed by optical techniques, rely on the intrinsic light-induced switching properties of this class of materials. The optically driven spin state transition can be mediated by a rich interplay of complexities including intermediate states in the spin state transition process, as well as intermolecular interactions, temperature, and strain. We emphasize here that the size reduction down to the nanoscale is essential for designing SCO systems that switch quickly as well as possibly retaining the memory of the light-driven state. We argue that SCO nano-sized systems are the key to device applications where the “write” speed is an important criterion.

Intermolecular interaction and cooperativity in an Fe(II) spin crossover molecular thin film system

Compact domain features have been observed in spin crossover [Fe{H₂B(pz)₂}₂(bipy)] molecular thin film systems via soft x-ray absorption spectroscopy and photoemission electron microscopy. The domains are in a mixed spin state that on average corresponds to roughly 2/3 the high spin occupation of the pure high spin state. Monte Carlo simulations support the presence of intermolecular interactions that can be described in terms of an Ising model in which interactions beyond nearest-neighbors cannot be neglected. This suggests the presence of short-range order to permit interactions between molecules beyond nearest neighbor that contribute to the formation of largely high spin state domains structure. The formation of a spin state domain structure appears to be the result of extensive cooperative effects.

Magnetic Field Perturbations to a Soft X-ray-Activated Fe (II) Molecular Spin State Transition

The X-ray-induced spin crossover transition of an Fe (II) molecular thin film in the presence and absence of a magnetic field has been investigated. The thermal activation energy barrier in the soft X-ray activation of the spin crossover transition for [Fe{H2B(pz)2}2(bipy)] molecular thin films is reduced in the presence of an applied magnetic field, as measured through X-ray absorption spectroscopy at various temperatures. The influence of a 1.8 T magnetic field is sufficient to cause deviations from the expected exponential spin state transition behavior which is measured in the field free case. We find that orbital moment diminishes with increasing temperature, relative to the spin moment in the vicinity of room temperature.

New Materials and Effects in Molecular Nanomagnets

Molecular magnets are a relatively new class of purely organic or metallo-organic materials, showing magnetism even without an external magnetic field. This interdisciplinary field between chemistry and physics has been gaining increased interest since the 1990s. While bulk molecular magnets are usually hard to build because of their molecular structures, low-dimensional molecular magnets are often easier to construct, down to dot-like (zero-dimensional) structures, which are investigated by different scanning probe technologies. On these scales, new effects such as superparamagnetic behavior or coherent switching during magnetization reversal can be recognized. Here, we give an overview of the recent advances in molecular nanomagnets, starting with single-molecule magnets (0D), typically based on Mn12, Fe8, or Mn4, going further to single-chain magnets (1D) and finally higher-dimensional molecular nanomagnets. This review does not aim to give a comprehensive overview of all research fields dealing with molecular nanomagnets, but instead aims at pointing out diverse possible materials and effects in order to stimulate new research in this broad field of nanomagnetism.

On stabilizing spin crossover molecule [Fe(tBu2qsal)2] on suitable supports: insights fromab initiostudies

Au(111) is one of the substrates often used for supporting spin crossover (SCO) molecules, partly because of its inertness and partly because it is conducting. Using density functional theory based calculations of [Fe(tBu₂qsal)₂] SCO molecules adsorbed on the Au(111) surface, we show that while Au(111) may not be a suitable support for the molecule, it may be so for a monolayer (ML) of molecules. While, physisorption of [Fe(tBu₂qsal)₂] on Au(111) leads to electron transfer from the highest occupied molecular orbital to the substrate, electron transfer is minimal for a ML of [Fe(tBu₂qsal)₂] on Au(111), causing only negligible changes in the electronic structure and magnetic moment of the molecules. Furthermore, a small difference in energy between the ferromagnetic and antiferromagnetic configurations of the molecules in the ML indicates a weak magnetic coupling between the molecules. These results suggest Au(111) as a plausible support for a ML of [Fe(tBu₂qsal)₂], making such a molecular assembly suitable for electronic and spin transport applications. As for [Fe(tBu₂qsal)₂] SCO molecules themselves, we find hexagonal boron nitride (h-BN) to be a viable support for them, as there is hardly any charge transfer, while graphene displays stronger interaction with the molecule (thanh-BN does) resulting in charge transfer from the molecule to graphene.

Valence tautomeric transition of bis(o-dioxolene) cobalt complex in solid state and solution

Valence tautomer transition occurs mainly in 3d metalorganic complexes with redox-active ligands and makes them potential candidates for single-molecular switches. The transition occurs under temperature, pressure, or light-induced stimuli and is strongly affected by the intermolecular interactions. However single-crystal x-ray diffraction is not always applicable to such systems when crystal structure is destroyed upon transition or system is studied in the solution. Such an example is bis(o-semiquinonato) cobalt complex with TEMPO-functionalized iminopyridine ancillary ligand. In this work we apply two complementary techniques-ligand-sensitive Fourier transform infrared spectroscopy (FTIR) and metal sensitive Co K-edge x-ray absorption spectroscopy (XAS). In a solid state, a temperature hysteresis of magnetization larger than 40 K was observed upon cyclic cooling-heating. So, the temperature of phase transition upon cooling is about 40 K lower than that upon heating. In solution, the x-ray absorption spectra for high-temperature and low-temperature states were similar to that in the solid form, but the hysteresis was absent. Two methods are can probe valence tautomer transition, but XAS has an advantage for the liquid phase analysis and FTIR has larger sensitivity to the ligand related interactions in solid.

Nonvolatile Voltage Controlled Molecular Spin-State Switching for Memory Applications

Nonvolatile, molecular multiferroic devices have now been demonstrated, but it is worth giving some consideration to the issue of whether such devices could be a competitive alternative for solid-state nonvolatile memory. For the Fe (II) spin crossover complex [Fe{H2B(pz)2}2(bipy)], where pz = tris(pyrazol-1-yl)-borohydride and bipy = 2,2′-bipyridine, voltage-controlled isothermal changes in the electronic structure and spin state have been demonstrated and are accompanied by changes in conductance. Higher conductance is seen with [Fe{H2B(pz)2}2(bipy)] in the high spin state, while lower conductance occurs for the low spin state. Plausibly, there is the potential here for low-cost molecular solid-state memory because the essential molecular thin films are easily fabricated. However, successful device fabrication does not mean a device that has a practical value. Here, we discuss the progress and challenges yet facing the fabrication of molecular multiferroic devices, which could be considered competitive to silicon.

Lanthanoid Complexes as Molecular Materials: The Redox Approach

The development of molecular materials with novel functionality offers promise for technological innovation. Switchable molecules that incorporate redox-active components are enticing candidate compounds due to their potential for electronic manipulation. Lanthanoid metals are most prevalent in their trivalent state and usually redox-activity in lanthanoid complexes is restricted to the ligand. The unique electronic and physical properties of lanthanoid ions have been exploited for various applications, including in magnetic and luminescent materials as well as in catalysis. Lanthanoid complexes are also promising for applications reliant on switchability, where the physical properties can be modulated by varying the oxidation state of a coordinated ligand. Lanthanoid-based redox activity is also possible, encompassing both divalent and tetravalent metal oxidation states. Thus, utilization of redox-active lanthanoid metals offers an attractive opportunity to further expand the capabilities of molecular materials. This review surveys both ligand and lanthanoid centered redox-activity in pre-existing molecular systems, including tuning of lanthanoid magnetic and photophysical properties by modulating the redox states of coordinated ligands. Ultimately the combination of redox-activity at both ligands and metal centers in the same molecule can afford novel electronic structures and physical properties, including multiconfigurational electronic states and valence tautomerism. Further targeted exploration of these features is clearly warranted, both to enhance understanding of the underlying fundamental chemistry, and for the generation of a potentially important new class of molecular material.

Quantitative Study of the Energy Changes in Voltage-Controlled Spin Crossover Molecular Thin Films

Voltage-controlled nonvolatile isothermal spin state switching of a [Fe{H₂B(pz)₂}₂(bipy)] (pz = tris(pyrazol-1-1y)-borohydride, bipy = 2,2'-bipyridine) film, more than 40 to 50 molecular layers thick, is possible when it is adsorbed onto a molecular ferroelectric substrate. Accompanying this high-spin and low-spin state switching, at room temperature, we observe a remarkable change in conductance, thereby allowing not only nonvolatile voltage control of the spin state ("write") but also current sensing of the molecular spin state ("read"). Monte Carlo Ising model simulations of the high-spin state occupancy, extracted from X-ray absorption spectroscopy, indicate that the energy difference between the low-spin and high-spin state is modified by 110 meV. Transport measurements demonstrate that four terminal voltage-controlled devices can be realized using this system.