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Wang Q, Gu Y, Chen C, Han L, Fayaz MU, Pan F, Song C. Strain-Induced Uphill Hydrogen Distribution in Perovskite Oxide Films. ACS APPLIED MATERIALS & INTERFACES 2024; 16:3726-3734. [PMID: 38197268 DOI: 10.1021/acsami.3c17472] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/11/2024]
Abstract
Incorporating hydrogen into transition-metal oxides (TMOs) provides a facile and powerful way to manipulate the performances of TMOs, and thus numerous efforts have been invested in developing hydrogenation methods and exploring the property modulation via hydrogen doping. However, the distribution of hydrogen ions, which is a key factor in determining the physicochemical properties on a microscopic scale, has not been clearly illustrated. Here, focusing on prototypical perovskite oxide (NdNiO3 and La0.67Sr0.33MnO3) epitaxial films, we find that hydrogen distribution exhibits an anomalous "uphill" feature (against the concentration gradient) under tensile strain, namely, the proton concentration enhances upon getting farther from the hydrogen source. Distinctly, under a compressive strain state, hydrogen shows a normal distribution without uphill features. The epitaxial strain significantly influences the chemical lattice coupling and the energy profile as a function of the hydrogen doping position, thus dominating the hydrogen distribution. Furthermore, the strain-(H+) distribution relationship is maintained in different hydrogenation methods (metal-alkali treatment) which is first applied to perovskite oxides. The discovery of strain-dependent hydrogen distribution in oxides provides insights into tailoring the magnetoelectric and energy-conversion functionalities of TMOs via strain engineering.
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Affiliation(s)
- Qian Wang
- Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China
| | - Youdi Gu
- Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China
| | - Chong Chen
- Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China
| | - Lei Han
- Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China
| | - Muhammad Umer Fayaz
- Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China
| | - Feng Pan
- Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China
| | - Cheng Song
- Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China
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Wang Q, Gu Y, Chen C, Qiao L, Pan F, Song C. Realizing Metastable Cobaltite Perovskite via Proton-Induced Filling of Oxygen Vacancy Channels. ACS APPLIED MATERIALS & INTERFACES 2023; 15:1574-1582. [PMID: 36537655 DOI: 10.1021/acsami.2c18311] [Citation(s) in RCA: 3] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
The interaction between transition-metal oxides (TMOs) and protons has become a key issue in magneto-ionics and proton-conducting fuel cells. Until now, most investigations on oxide-proton reactions rely on electrochemical tools, while the direct interplay between protons and oxides remains basically at simple dissolution of metal oxides by an acidic solution. In this work, we find classical TMO brownmillerite SrCoO2.5 (B-SCO) films with ordered oxygen vacancy channels experiencing an interesting transition to a metastable perovskite phase (M-SCO) in a weak acidic solution. M-SCO exhibits a strong ferromagnetism (1.01 μB/Co, Tc > 200 K) and a greatly elevated electrical conductivity (∼104 of pristine SrCoO2.5), which is similar to the prototypical perovskite SrCoO3. Besides, such M-SCO tends to transform back to B-SCO in a vacuum environment or heating at a relatively low temperature. Two possible mechanisms (H2O addition/active oxygen filling) have been proposed to explain the phenomenon, and the control experiments demonstrate that the latter mechanism is the dominant process. Our work finds a new way to realize cobaltite perovskite with enhanced magnetoelectric properties and may deepen the understanding of oxide-proton interaction in an aqueous solution.
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Affiliation(s)
- Qian Wang
- Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing100084, China
| | - Youdi Gu
- Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing100084, China
| | - Chong Chen
- Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing100084, China
| | - Leilei Qiao
- Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing100084, China
| | - Feng Pan
- Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing100084, China
| | - Cheng Song
- Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing100084, China
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Guo W, Li M, Wu X, Liu Y, Ou T, Xiao C, Qiu Z, Zheng Y, Wang Y. Nonvolatile n-Type Doping and Metallic State in Multilayer-MoS 2 Induced by Hydrogenation Using Ionic-Liquid Gating. NANO LETTERS 2022; 22:8957-8965. [PMID: 36342413 DOI: 10.1021/acs.nanolett.2c03159] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
Manipulation of the carrier density of layered transition-metal dichalcogenides (TMDs) is of fundamental significance for a wide range of electronic and optoelectronic applications. Herein, we applied the ionic-liquid-gating (ILG) method to inject the smallest ions, H+, into layered MoS2 to manipulate its carrier concentration. The measurements demonstrate that the injection of H+ realizes a nonvolatile n-type doping and metallic state in multilayer-MoS2 with a concentration of injection electron of ∼1.08 × 1013 cm-2 but has no effect on monolayer-MoS2, which clearly reveals that the H+ is injected into the interlayer of MoS2, not in the crystal lattice. The H+-injected multilayer-MoS2 was then used as the contact electrodes of a monolayer-MoS2 field effect transistor to improve the contact quality, and its performance has been enhanced. Our work deepens the understanding of the ILG technology and extends its application in TMDs.
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Affiliation(s)
- Wenxuan Guo
- Department of Physics, Zhejiang Province Key Laboratory of Quantum Technology and Device & State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou310027, People's Republic of China
| | - Mengge Li
- Department of Physics, Zhejiang Province Key Laboratory of Quantum Technology and Device & State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou310027, People's Republic of China
| | - Xiaoxiang Wu
- Department of Physics, Zhejiang Province Key Laboratory of Quantum Technology and Device & State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou310027, People's Republic of China
| | - Yali Liu
- Department of Physics, Zhejiang Province Key Laboratory of Quantum Technology and Device & State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou310027, People's Republic of China
| | - Tianjian Ou
- Department of Physics, Zhejiang Province Key Laboratory of Quantum Technology and Device & State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou310027, People's Republic of China
| | - Cong Xiao
- Department of Physics, Zhejiang Province Key Laboratory of Quantum Technology and Device & State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou310027, People's Republic of China
| | - Zhanjie Qiu
- Department of Physics, Zhejiang Province Key Laboratory of Quantum Technology and Device & State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou310027, People's Republic of China
| | - Yuan Zheng
- Department of Physics, Zhejiang Province Key Laboratory of Quantum Technology and Device & State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou310027, People's Republic of China
| | - Yewu Wang
- Department of Physics, Zhejiang Province Key Laboratory of Quantum Technology and Device & State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou310027, People's Republic of China
- Collaborative Innovation Centre of Advanced Microstructures, Nanjing University, Nanjing210093, People's Republic of China
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Hu S, Zhu Y, Han W, Li X, Ji Y, Ye M, Jin C, Liu Q, Hu S, Wang J, Wang J, He J, Cazorla C, Chen L. High-Conductive Protonated Layered Oxides from H 2 O Vapor-Annealed Brownmillerites. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2021; 33:e2104623. [PMID: 34590356 DOI: 10.1002/adma.202104623] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/16/2021] [Revised: 08/13/2021] [Indexed: 06/13/2023]
Abstract
Protonated 3d transition-metal oxides often display low electronic conduction, which hampers their application in electric, magnetic, thermoelectric, and catalytic fields. Electronic conduction can be enhanced by co-inserting oxygen acceptors simultaneously. However, the currently used redox approaches hinder protons and oxygen ions co-insertion due to the selective switching issues. Here, a thermal hydration strategy for systematically exploring the synthesis of conductive protonated oxides from 3d transition-metal oxides is introduced. This strategy is illustrated by synthesizing a novel layered-oxide SrCoO3 H from the brownmillerite SrCoO2.5 . Compared to the insulating SrCoO2.5 , SrCoO3 H exhibits an unprecedented high electronic conductivity above room temperature, water uptake at 250 °C, and a thermoelectric power factor of up to 1.2 mW K-2 m-1 at 300 K. These findings open up opportunities for creating high-conductive protonated layered oxides by protons and oxygen ions co-doping.
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Affiliation(s)
- Songbai Hu
- Department of Physics, Southern University of Science and Technology, Shenzhen, 518055, China
| | - Yuanmin Zhu
- School of Material Science and Engineering, Dongguan University of Technology, Dongguan, 523000, China
| | - Wenqiao Han
- Department of Physics, Southern University of Science and Technology, Shenzhen, 518055, China
| | - Xiaowen Li
- Department of Physics, Southern University of Science and Technology, Shenzhen, 518055, China
| | - Yanjiang Ji
- Department of Physics, Southern University of Science and Technology, Shenzhen, 518055, China
| | - Mao Ye
- Department of Physics, Southern University of Science and Technology, Shenzhen, 518055, China
| | - Cai Jin
- Department of Physics, Southern University of Science and Technology, Shenzhen, 518055, China
| | - Qi Liu
- Department of Physics, Southern University of Science and Technology, Shenzhen, 518055, China
| | - Sixia Hu
- SUSTech Core Research Facilities, Southern University of Science and Technology, Shenzhen, 518055, China
| | - Jiaou Wang
- Laboratory of Synchrotron Radiation, Institute of High Energy Physics, Chinese Academy of Sciences, Beijing, 100039, China
| | - Junling Wang
- Department of Physics, Southern University of Science and Technology, Shenzhen, 518055, China
| | - Jiaqing He
- Department of Physics, Southern University of Science and Technology, Shenzhen, 518055, China
| | - Claudio Cazorla
- Departament de Física, Universitat Politècnica de Catalunya, Campus Nord B4-B5, Barcelona, E-08034, Spain
| | - Lang Chen
- Department of Physics, Southern University of Science and Technology, Shenzhen, 518055, China
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