Variational hysteresis and photoresponse behavior of MAPbX3(X= I, Br, Cl) perovskite single crystals

Anion-Dependent Polarization and Piezoelectric Power Generation in Hybrid Halide MAPbX3 (X = I, Br, and Cl) Thin Films with Out-of-Plane Structural Adjustments

Anion-dependent differences in the electromechanical energy harvesting capability of perovskite halides have not been experimentally demonstrated thus far. Herein, anion-dependent piezoelectricity and bending-driven power generation in high-quality methylammonium lead halide MAPbX₃ (X = I, Br, and Cl) thin films are explored; additionally, anisotropic in situ strain is imposed to improve energy harvesting under tensile bending. After applying the maximum in situ strain of -0.73% for all the halide thin films, the MAPbI₃ thin-film harvester exhibited a peak voltage/current of ≈23.1 V/≈1703 nA as the best values, whereas MAPbBr₃ and MAPbCl₃ demonstrated ≈5.6 V/≈176 nA and ≈3.3 V/≈141 nA, respectively, under identical bending conditions. Apart from apparent ferroelectricity of tetragonal MAPbI₃ , origin of the piezoelectricity in both cubic MAPbBr₃ and MAPbCl₃ is explored as being related to organic-inorganic hydrogen bonding, lattice distortion, and ionic migration, with experimental supports of effective piezoelectric coefficient and grain boundary potential. Conclusively, piezoelectricity of the cubic halides is assumed to be due to their soft polarity modes and relatively low elastic modulus with vacancies contributing to space-charge polarization. In the case of ferroelectric MAPbI₃ , the distortion of PbI₆ octahedra and atomic displacement within each octahedron are quantitatively estimated.

Single-Crystal Perovskite Solar Cells Exhibit Close to Half A Millimeter Electron-Diffusion Length

Single-crystal halide perovskites exhibit photogenerated-carriers of high mobility and long lifetime, making them excellent candidates for applications demanding thick semiconductors, such as ionizing radiation detectors, nuclear batteries, and concentrated photovoltaics. However, charge collection depreciates with increasing thickness; therefore, tens to hundreds of volts of external bias is required to extract charges from a thick perovskite layer, leading to a considerable amount of dark current and fast degradation of perovskite absorbers. However, extending the carrier-diffusion length can mitigate many of the anticipated issues preventing the practical utilization of perovskites in the abovementioned applications. Here, single-crystal perovskite solar cells that are up to 400 times thicker than state-of-the-art perovskite polycrystalline films are fabricated, yet retain high charge-collection efficiency in the absence of an external bias. Cells with thicknesses of 110, 214, and 290 µm display power conversion efficiencies (PCEs) of 20.0, 18.4, and 14.7%, respectively. The remarkable persistence of high PCEs, despite the increase in thickness, is a result of a long electron-diffusion length in those cells, which was estimated, from the thickness-dependent short-circuit current, to be ≈0.45 mm under 1 sun illumination. These results pave the way for adapting perovskite devices to optoelectronic applications in which a thick active layer is essential.

Optimized photoelectric characteristics of MAPbCl3and MAPbBr3composite perovskite single crystal heterojunction photodetector

MAPbBr₃single crystal (SC) thin layer was successfully grown on MAPbCl₃SC substrate to form perovskite SC heterojunction. Planar structure electrodes are deposited by thermal evaporation on the surfaces of MAPbCl₃, MAPbBr₃, and SCs heterojunction, respectively to evaluate their photoelectric performance. The SC heterojunction device exhibits excellent unidirectional conductivity in the voltage-current curves. Meanwhile, the current-time curves prove that SC heterojunction devices can effectively utilize the advantages of MAPbCl₃and MAPbBr₃, possessing relatively low dark current (∼300 nA), which is comparable to the dark current of MAPbCl₃, but very high photocurrent (∼3500 nA), which is equivalent to the photocurrent of MAPbBr₃. Rather than the photocurrent overshot and decay occurring at the exposure of light illumination in the MAPbBr₃device, the photocurrent is extremely stable without overshot and decay in the SC heterojunction device. The light-to-dark ratio of the SC heterojunction device is twice that of MAPbCl₃device and three times that of MAPbBr₃device. Furthermore, the detectivity of the heterojunction device reaches as high as∼7×1011 Jones, an order of magnitude higher than MAPbCl₃and MAPbBr₃. The excellent characteristics of SC heterojunction further expand the practical application prospect of perovskite materials.