1
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Eisenkolb J, Lloret V, Zink-Lorre N, Pla S, Abellán G, Sastre-Santos Á, Hauke F, Fernández-Lázaro F, Hirsch A. Investigations of Crucial Factors for the Non-Covalent Functionalization of Black Phosphorus (BP) using Perylene Diimide Derivatives for the Passivation of BP Nanosheets. Chemistry 2024:e202402166. [PMID: 39282882 DOI: 10.1002/chem.202402166] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/04/2024] [Indexed: 10/30/2024]
Abstract
The non-covalent functionalization of black phosphorus (BP) was studied with a scope of ten tailor-made perylene diimides (PDIs). A combination of UV/Vis-, fluorescence-, as well as Raman spectroscopy and atomic force microscopy was used to investigate the structural factors, which contribute to a pronounced PDI-BP interaction and thus support the protection of BP nanosheets against oxidative degradation. We were able to show, that water-soluble, amphiphilic PDIs with highly charged head groups can be used for the non-covalent functionalization of BP in aqueous media. Here, based on the hydrophobic effect, an efficient adsorption of the respective PDI molecules takes place and leads to the formation of a passivating film, yielding a considerable stabilization of the BP flakes under ambient conditions exceeding 30 days.
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Affiliation(s)
- Jasmin Eisenkolb
- Chair of Organic Chemistry II, Center of Advanced Materials and Processes (ZMP), Friedrich-Alexander University Erlangen-Nürnberg, Dr.-Mack-Str. 81, 90762, Fürth
| | - Vicent Lloret
- Chair of Organic Chemistry II, Center of Advanced Materials and Processes (ZMP), Friedrich-Alexander University Erlangen-Nürnberg, Dr.-Mack-Str. 81, 90762, Fürth
| | - Nathalie Zink-Lorre
- Área de Química Orgánica, Instituto de Bioingeniería, Universidad Miguel Hernández, Avda. de la Universidad s/n, 03203, Elche, Spain
| | - Sara Pla
- Área de Química Orgánica, Instituto de Bioingeniería, Universidad Miguel Hernández, Avda. de la Universidad s/n, 03203, Elche, Spain
| | - Gonzalo Abellán
- Instituto de Ciencia Molecular (ICMol), Universidad de Valencia, Catedrático José Beltrán 2, 46980, Paterna, Spain
| | - Ángela Sastre-Santos
- Área de Química Orgánica, Instituto de Bioingeniería, Universidad Miguel Hernández, Avda. de la Universidad s/n, 03203, Elche, Spain
| | - Frank Hauke
- Chair of Organic Chemistry II, Center of Advanced Materials and Processes (ZMP), Friedrich-Alexander University Erlangen-Nürnberg, Dr.-Mack-Str. 81, 90762, Fürth
| | - Fernando Fernández-Lázaro
- Área de Química Orgánica, Instituto de Bioingeniería, Universidad Miguel Hernández, Avda. de la Universidad s/n, 03203, Elche, Spain
| | - Andreas Hirsch
- Chair of Organic Chemistry II, Center of Advanced Materials and Processes (ZMP), Friedrich-Alexander University Erlangen-Nürnberg, Dr.-Mack-Str. 81, 90762, Fürth
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2
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Yi K, Wu Y, An L, Deng Y, Duan R, Yang J, Zhu C, Gao W, Liu Z. Van der Waals Encapsulation by Ultrathin Oxide for Air-Sensitive 2D Materials. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2403494. [PMID: 38863206 DOI: 10.1002/adma.202403494] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/08/2024] [Revised: 05/22/2024] [Indexed: 06/13/2024]
Abstract
The ambient stability is one of the focal points for applications of 2D materials, especially for those well-known air-sensitive ones, such as black phosphorus (BP) and transitional metal telluride. Traditional methods of encapsulation, such as atomic layer deposition of oxides and heterogeneous integration of hexagonal boron nitride, can hardly avoid removal of encapsulation layer when the 2D materials are encapsulated for further device fabrication, which causes complexity and damage during the procedure. Here, a van der Waals encapsulation method that allows direct device fabrication without removal of encapsulation layer is introduced using Ga2O3 from liquid gallium. Taking advantage of the robust isolation ability against ambient environment of the dense native oxide of gallium, hundreds of times longer retention time of (opto)electronic properties of encapsulated BP and MoTe2 devices is realized than unencapsulated devices. Due to the ultrathin high-κ properties of Ga2O3, top-gated devices are directly fabricated with the encapsulation layer, simultaneously as a dielectric layer. This direct device fabrication is realized by selective etching of Ga2O3, leaving the encapsulated materials intact. Encapsulated 1T' MoTe2 exhibits high conductivity even after 150 days in ambient environment. This method is, therefore, highlighted as a promising and distinctive one compared with traditional passivation approaches.
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Affiliation(s)
- Kongyang Yi
- School of Materials Science and Engineering, Nanyang Technological University, Singapore, 639798, Singapore
| | - Yao Wu
- School of Materials Science and Engineering, Nanyang Technological University, Singapore, 639798, Singapore
| | - Liheng An
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, 637371, Singapore
| | - Ya Deng
- School of Materials Science and Engineering, Nanyang Technological University, Singapore, 639798, Singapore
| | - Ruihuan Duan
- School of Materials Science and Engineering, Nanyang Technological University, Singapore, 639798, Singapore
| | - Jiefu Yang
- School of Materials Science and Engineering, Nanyang Technological University, Singapore, 639798, Singapore
| | - Chao Zhu
- School of Materials Science and Engineering, Nanyang Technological University, Singapore, 639798, Singapore
| | - Weibo Gao
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, 637371, Singapore
| | - Zheng Liu
- School of Materials Science and Engineering, Nanyang Technological University, Singapore, 639798, Singapore
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3
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Higashitarumizu N, Tajima S, Kim J, Cai M, Javey A. Long operating lifetime mid-infrared LEDs based on black phosphorus. Nat Commun 2023; 14:4845. [PMID: 37563157 PMCID: PMC10415361 DOI: 10.1038/s41467-023-40602-5] [Citation(s) in RCA: 6] [Impact Index Per Article: 6.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/28/2023] [Accepted: 08/01/2023] [Indexed: 08/12/2023] Open
Abstract
Black phosphorus (BP) is a narrow bandgap layered semiconductor promising for mid-infrared optoelectronic applications. BP-based devices have been shown to surpass state-of-the-art mid-infrared detectors and light-emitting diodes (LEDs) in terms of performance. Despite their device advantages, the material's inherent instability in the air could hinder its use in practical optoelectronic applications. Here, we investigated the impact of passivation on the device lifetime of BP LEDs, which deteriorate in a matter of seconds without using passivation. The lifetime is significantly extended with an Al2O3 passivation layer and nitrogen packaging via atomic layer deposition and ultra-violet curable resin sealing. The operational lifetime (half-life) at room temperature is extrapolated to be ~15,000 h with an initial power density of 340 mW/cm2 based on accelerated life testing. The present results indicate that efficient BP optoelectronics can be highly robust through simple and scalable packaging technologies, with important practical implications for mid-infrared applications.
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Affiliation(s)
- Naoki Higashitarumizu
- Electrical Engineering and Computer Sciences, University of California, Berkeley, CA, 94720, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
- Berkeley Sensor & Actuator Center, University of California, Berkeley, CA, 94720, USA
| | - Shogo Tajima
- Electrical Engineering and Computer Sciences, University of California, Berkeley, CA, 94720, USA
- Berkeley Sensor & Actuator Center, University of California, Berkeley, CA, 94720, USA
| | - Jongchan Kim
- Electrical Engineering and Computer Sciences, University of California, Berkeley, CA, 94720, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
- Berkeley Sensor & Actuator Center, University of California, Berkeley, CA, 94720, USA
- Department of Integrated Display, Engineering, Yonsei University, Seoul, 03722, Republic of Korea
| | - Mingyang Cai
- Electrical Engineering and Computer Sciences, University of California, Berkeley, CA, 94720, USA
- Berkeley Sensor & Actuator Center, University of California, Berkeley, CA, 94720, USA
| | - Ali Javey
- Electrical Engineering and Computer Sciences, University of California, Berkeley, CA, 94720, USA.
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA.
- Berkeley Sensor & Actuator Center, University of California, Berkeley, CA, 94720, USA.
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4
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Nawaz MAH, Akhtar MH, Ren J, Akhtar N, Hayat A, Yu C. Black phosphorus nanosheets/poly(allylamine hydrochloride) based electrochemical immunosensor for the selective detection of human epididymis protein 4. NANOTECHNOLOGY 2022; 33:485502. [PMID: 35998539 DOI: 10.1088/1361-6528/ac8bd8] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/20/2022] [Accepted: 08/23/2022] [Indexed: 06/15/2023]
Abstract
In this work, an electrochemical immunosensor based on black phosphorus nanosheets (BPNS)/poly(allylamine hydrochloride) (PAH) nanocomposite modified glassy carbon electrode was developed for the detection of ovarian cancer biomarker HE4. PAH has been applied to retain BPNS in its original honeycomb structure and to anchor biomolecules electrostatically on the transducer surface. The as synthesized nanocomposite was characterized by zeta potential analysis, scanning electron microscopy, x-ray photoelectron spectroscopy, transmission electron microscopy, high-resolution transmission electron microscopy. Subsequently, the performance of the electrochemical immunosensor was evaluated through cyclic voltammetry, differential pulse voltammetry and electrochemical impedance spectroscopy. Under the optimal condition, the developed electrochemical immunosensor permitted to detect HE4 with a linear range of 0.1-300 ng ml-1and a detection limit of 0.01 ng ml-1. The developed sensor exhibited good selectivity and specificity to HE4 with negligible interference effect from common biomolecules like bovine serum albumin, lysozyme, protamine, glucose, fructose, hemoglobin and fetal bovine serum. Further, practical application of developed electrochemical immunosensor was demonstrated in spiked human serum which showed satisfactory recovery percentages.
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Affiliation(s)
- Muhammad Azhar Hayat Nawaz
- State Key Laboratory of Electroanalytical Chemistry, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun, 130022, People's Republic of China
- University of Science and Technology of China, Hefei, 230026, People's Republic of China
- Interdisciplinary Research Centre in Biomedical Materials (IRCBM), COMSATS University, Islamabad, Lahore Campus, Lahore, 54000, Pakistan
| | - Mahmood Hassan Akhtar
- Department of Chemistry, National University of Technology (NUTech) IJP Road, Islamabad, Pakistan
| | - Jia Ren
- State Key Laboratory of Electroanalytical Chemistry, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun, 130022, People's Republic of China
- University of Science and Technology of China, Hefei, 230026, People's Republic of China
| | - Naeem Akhtar
- Interdisciplinary Research Centre in Biomedical Materials (IRCBM), COMSATS University, Islamabad, Lahore Campus, Lahore, 54000, Pakistan
| | - Akhtar Hayat
- Interdisciplinary Research Centre in Biomedical Materials (IRCBM), COMSATS University, Islamabad, Lahore Campus, Lahore, 54000, Pakistan
| | - Cong Yu
- State Key Laboratory of Electroanalytical Chemistry, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun, 130022, People's Republic of China
- University of Science and Technology of China, Hefei, 230026, People's Republic of China
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5
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Ling Z, Li P, Zhang SY, Arif N, Zeng YJ. Stability and passivation of 2D group VA elemental materials: black phosphorus and beyond. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2022; 34:224004. [PMID: 35259736 DOI: 10.1088/1361-648x/ac5bce] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/03/2021] [Accepted: 03/08/2022] [Indexed: 06/14/2023]
Abstract
Since the successful isolation of graphene in 2004, two-dimensional (2D) materials have become one of the focuses in material science owing to their extraordinary physical and chemical properties. In particular, 2D group VA elemental materials exhibit fascinating thickness-dependent band structures. Unfortunately, the well-known instability issue hinders their fundamental researches and practical applications. In this review, we first discuss the degradation mechanism of black phosphorus (BP), a most studied group VA material. Next, we summarize the methods to enhance BP stability with the focus of multifunctional passivation. Finally, we briefly discuss the protection strategies of other emerging group VA materials in recent years. This review provides insight for the degradation mechanism and protecting strategy for 2D group VA elements materials, which will promote their potential applications in electronics, optoelectronics, and biomedicine.
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Affiliation(s)
- Zhaoheng Ling
- Key laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, People's Republic of China
| | - Peng Li
- College of New Energy, China University of Petroleum (East China), Qingdao, 266580, People's Republic of China
| | - Su-Yun Zhang
- Key laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, People's Republic of China
| | - Nayab Arif
- Key laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, People's Republic of China
| | - Yu-Jia Zeng
- Key laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, People's Republic of China
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6
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Zhang C, Hu F, Hao X, Rao Q, Hu T, Sun W, Guo C, Li CM. Sandwiching Phosphorene with Iron Porphyrin Monolayer for High Stability and Its Biomimetic Sensor to Sensitively Detect Living Cell Released NO. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2022; 9:e2104066. [PMID: 34978161 PMCID: PMC8867151 DOI: 10.1002/advs.202104066] [Citation(s) in RCA: 4] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/13/2021] [Revised: 11/22/2021] [Indexed: 06/01/2023]
Abstract
Instability of 2D phosphorene material is the major obstacle for its broad applications. Herein phosphorene is sandwiched with self-assembled iron porphyrin monolayers on both sides (I-Phene) to significantly enhance stability. Iron porphyrin has strong interaction with phosphorene through formation of PFe bonds. The sandwich structure offers excellent stability of phosphorene by both-sided monolayer protections for an intact phosphorene structure more than 40 days under ambient conditions. Meanwhile, the electron transfer between iron porphyrin and phosphorene result in a high oxidation state of Fe, making I-Phene biomimetic sensitivity toward oxidation of nitric oxide (NO) for 2.5 and 4.0 times higher than phosphorene and iron-porphyrin alone, respectively. Moreover, I-Phene exhibits excellent selectivity, a wide detection range, and a low detection limit at a low oxidation potential of 0.82 V, which is comparable with the reported noble metal based biomimetic sensors while ranking the best among all non-noble biomimetic ones. I-Phene is further used for real-time monitoring NO released from cells. This work provides effective approach against phosphorene degrading for outstanding stability, which has universal significance for its various important applications, and holds a great promise for a highly sensitive biomimetic sensor in live-cell assays.
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Affiliation(s)
- Chunmei Zhang
- Institute of Materials Science and DevicesSchool of Materials Science and EngineeringSuzhou University of Science and TechnologyKerui RoadSuzhou215009P. R. China
| | - Fangxin Hu
- Institute of Materials Science and DevicesSchool of Materials Science and EngineeringSuzhou University of Science and TechnologyKerui RoadSuzhou215009P. R. China
| | - Xijuan Hao
- Institute of Materials Science and DevicesSchool of Materials Science and EngineeringSuzhou University of Science and TechnologyKerui RoadSuzhou215009P. R. China
| | - Qianghai Rao
- Institute of Materials Science and DevicesSchool of Materials Science and EngineeringSuzhou University of Science and TechnologyKerui RoadSuzhou215009P. R. China
| | - Tao Hu
- Institute of Materials Science and DevicesSchool of Materials Science and EngineeringSuzhou University of Science and TechnologyKerui RoadSuzhou215009P. R. China
| | - Wei Sun
- College of Chemistry and Chemical EngineeringHainan Normal UniversityHaikou571158P. R. China
| | - Chunxian Guo
- Institute of Materials Science and DevicesSchool of Materials Science and EngineeringSuzhou University of Science and TechnologyKerui RoadSuzhou215009P. R. China
| | - Chang Ming Li
- Institute of Materials Science and DevicesSchool of Materials Science and EngineeringSuzhou University of Science and TechnologyKerui RoadSuzhou215009P. R. China
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7
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Lin S, Tao B, Zhao X, Chen G, Wang DY. Surface Functionalization of Black Phosphorus via Amine Compounds and Its Impacts on the Flame Retardancy and Thermal Decomposition Behaviors of Epoxy Resin. Polymers (Basel) 2021; 13:polym13213635. [PMID: 34771191 PMCID: PMC8588435 DOI: 10.3390/polym13213635] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/15/2021] [Revised: 09/29/2021] [Accepted: 10/15/2021] [Indexed: 11/16/2022] Open
Abstract
Recently, lots of effort has been placed into stabilizing black phosphorus (BP) in the air to improve its compatibility with polymers. Herein, BP was chemically functionalized by aliphatic amine (DETA), aromatic amine (PPDA) and cyclamine (Pid) via a nucleophilic substitution reaction, aiming to develop an intensively reactive BP flame retardant for epoxy resin (EP). The -NH2 group on BP-DETA, BP-PPDA and BP-Pid reacted with the epoxide group at different temperatures. The lowest temperature was about 150 °C for BP-DETA. The impacts of three BP-NH2 were compared on the flame retardancy and thermal decomposition of EP. At 5 wt% loading, EP/BP-NH2 all passed UL 94 V 0 rating. The limiting oxygen index (LOI) of EP/BP-PPDA was as high as 32.3%. The heat release rate (HRR) of EP/BP-DETA greatly decreased by 46% and char residue increased by 73.8%, whereas HRR of EP/BP-Pid decreased by 11.5% and char residue increased by 50.8%, compared with EP. Average effective heat of combustion (av-EHC) of EP/BP-Pid was lower than that of EP/BP-DETA and EP/BP-PPDA. In view of the flame-retardant mechanism, BP nanosheets functionalized with aliphatic amine and aromatic amine played a dominant role in the condensed phase, while BP functionalized with cyclamine was more effective in the gas phase.
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Affiliation(s)
- Shaoling Lin
- College of Chemical Engineering, Huaqiao University, Xiamen 361021, China;
- College of Materials Science and Engineering, Huaqiao University, Xiamen 361021, China; (B.T.); (G.C.)
| | - Boqing Tao
- College of Materials Science and Engineering, Huaqiao University, Xiamen 361021, China; (B.T.); (G.C.)
| | - Xiaomin Zhao
- College of Materials Science and Engineering, Huaqiao University, Xiamen 361021, China; (B.T.); (G.C.)
- Correspondence: (X.Z.); (D.-Y.W.)
| | - Guohua Chen
- College of Materials Science and Engineering, Huaqiao University, Xiamen 361021, China; (B.T.); (G.C.)
| | - De-Yi Wang
- IMDEA Materials Institute, C/Eric Kandel, 2, 28906 Getafe, Spain
- Escuela Politécnica Superior, Universidad Francisco de Vitoria, Ctra. Pozuelo-Majadahonda Km 1,800, 28223 Pozuelo de Alarcón, Spain
- Correspondence: (X.Z.); (D.-Y.W.)
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8
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Li Y, Huang L, Weng X, Liu Z, You C. Black Phosphorene Modified Electrochemical Sensor for Fast Determination of 5‐Hydroxymethyl‐2‐furfural in Milk. ELECTROANAL 2021. [DOI: 10.1002/elan.202100302] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/07/2022]
Affiliation(s)
- Yuzhen Li
- State Key Laboratory of Dairy Biotechnology Shanghai Engineering Research Center of Dairy Biotechnology Postdoctoral Workstation of Bright Dairy – Shanghai Jiao Tong University Dairy Research Institute Bright Dairy & Food Co., Ltd. Shanghai 200436 China
- School of Life Sciences and Biotechnology Shanghai Jiao Tong University Shanghai 200240 China
- Synergetic Innovation Center of Food Safety and Nutrition Jiangnan University Wuxi Jiangsu 214122 China
| | - Lu Huang
- State Key Laboratory of Dairy Biotechnology Shanghai Engineering Research Center of Dairy Biotechnology Postdoctoral Workstation of Bright Dairy – Shanghai Jiao Tong University Dairy Research Institute Bright Dairy & Food Co., Ltd. Shanghai 200436 China
- School of life Sciences Shanghai University Shanghai 200444 China
| | - Xuexiang Weng
- College of Chemistry and Life Sciences Key Laboratory of the Ministry of Education for Advanced Catalysis Materials Zhejiang Normal University Jinhua 321004 China
| | - Zhenmin Liu
- State Key Laboratory of Dairy Biotechnology Shanghai Engineering Research Center of Dairy Biotechnology Postdoctoral Workstation of Bright Dairy – Shanghai Jiao Tong University Dairy Research Institute Bright Dairy & Food Co., Ltd. Shanghai 200436 China
- Synergetic Innovation Center of Food Safety and Nutrition Jiangnan University Wuxi Jiangsu 214122 China
| | - Chunping You
- State Key Laboratory of Dairy Biotechnology Shanghai Engineering Research Center of Dairy Biotechnology Postdoctoral Workstation of Bright Dairy – Shanghai Jiao Tong University Dairy Research Institute Bright Dairy & Food Co., Ltd. Shanghai 200436 China
- Synergetic Innovation Center of Food Safety and Nutrition Jiangnan University Wuxi Jiangsu 214122 China
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9
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Ruiz A, Martín C, Reina G. Does black phosphorus hold potential to overcome graphene oxide? A comparative review of their promising application for cancer therapy. NANOSCALE ADVANCES 2021; 3:4029-4036. [PMID: 36132840 PMCID: PMC9418961 DOI: 10.1039/d1na00203a] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/17/2021] [Accepted: 05/22/2021] [Indexed: 05/28/2023]
Abstract
Although graphene oxide (GO) is leading the way in the biomedical field of 2D materials, nanosized black phosphorus (NBP) has recently come to attention for use in this challenging field. A direct comparison between these two materials, in this context, has never been described. Therefore, in this mini-review, we will critically compare the applications of NBP and GO in cancer therapy. Material functionalisation, biodegradation by design, phototherapy and immunotherapy will be summarised. This work aims to inspire researchers in designing the next generation of safe NBP platforms for cancer treatment, taking advantage of the vast experience gained with GO.
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Affiliation(s)
- Amalia Ruiz
- School of Pharmacy, Queen's University Belfast Belfast BT9 7BL UK
| | - Cristina Martín
- Dpto. de Bioingeniería en Ingeniería Aeroespacial, Universidad Carlos III de Madrid Avda. de la Universidad, 30. 28911 Leganés Madrid Spain
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10
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Wan D, Huang H, Wang Z, Liu X, Liao L. Recent advances in long-term stable black phosphorus transistors. NANOSCALE 2020; 12:20089-20099. [PMID: 33006355 DOI: 10.1039/d0nr05204c] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Two-dimensional black phosphorus (BP) presents extensive exciting properties attributed to the high mobility and non-dangling bonds uniform surface with simultaneously obtained atomically ultrathin body and offer opportunities beyond the traditional materials. BP has thus emerged as a unique material in the post-silicon era for low-power electronics and photo-electronics. Tremendous efforts have been invested in fully developing the extreme potentiality of BP for future nanoelectronics. However, the accompanying challenges, especially the poor stability that originates from the active surface, in fabricating large-area BP transistors with comparable electrical performance to silicon electronics prevent their practical application. Herein, we review the progress of recent works that demonstrated the feasibility of enhancing the stability of BP electronics, and identify the opportunities and challenges in developing BP as atomically thin semiconductors for next-generation nanoelectronics.
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Affiliation(s)
- Da Wan
- School of Information Science and Engineering, Wuhan University of Science and Technology, Wuhan, 430081, China
| | - Hao Huang
- School of Physics and Technology, Wuhan University, Wuhan 430072, China
| | - Zhongzheng Wang
- School of Physics and Technology, Wuhan University, Wuhan 430072, China
| | - Xingqiang Liu
- Key Laboratory for Micro-/Nano-Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha 410082, China.
| | - Lei Liao
- School of Physics and Technology, Wuhan University, Wuhan 430072, China
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11
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Comparative Study on the Adsorption Capacities of the Three Black Phosphorus-Based Materials for Methylene Blue in Water. SUSTAINABILITY 2020. [DOI: 10.3390/su12208335] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/16/2022]
Abstract
Dye effluent has attracted considerable attention from worldwide researchers due to its harm and toxicity in recent years; as a result, the treatment for dye has become one of the focuses in the environmental field. Adsorption has been widely applied in water treatment owing to its various advantages. However, the adsorption behaviors of the new materials, such as the 2D black phosphorus (BP), for pollution were urgently revealed and improved. In this work, BP, black phosphorene (BPR), and sulfonated BPR (BPRS) were prepared by the vapor phase deposition method, liquid-phase exfoliating method, and modification with sulfonation, respectively. The three BP-based materials were characterized and used as adsorbents for the removal of methylene blue (MB) in water. The results showed that the specific surface areas (SSAs) of BP, BPR, and BPRS were only 6.78, 6.92, and 7.72 m2·g−1, respectively. However, the maximum adsorption capacities of BP, BPR, and BPRS for MB could reach up to 84.03, 91.74, and 140.85 mg·g−1, which were higher than other reported materials with large SSAs such as graphene (GP), nanosheet/magnetite, and reduced graphene oxide (rGO). In the process of BP adsorbing MB, wrinkles were generated, and the wrinkles would further induce adsorption. BPR had fewer layers (3–5), more wrinkles, and stronger adsorption capacity (91.74 mg·g−1). The interactions between the BP-based materials and MB might cause the BP-based materials to deform, i.e., to form wrinkles, thereby creating new adsorption sites between layers, and then further inducing adsorption. Although the wrinkles had a certain promotion effect, the adsorption capacity was limited, so the sulfonic acid functional group was introduced to modify BPR to increase its adsorption sites and promote the adsorption effect. These findings could provide a new viewpoint and insight on the adsorption behavior and potential application of the BP-based materials.
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12
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Karki B, Freelon B, Rajapakse M, Musa R, Riyadh SMS, Morris B, Abu U, Yu M, Sumanasekera G, Jasinski JB. Strain-induced vibrational properties of few layer black phosphorus and MoTe 2 via Raman spectroscopy. NANOTECHNOLOGY 2020; 31:425707. [PMID: 32604079 DOI: 10.1088/1361-6528/aba13e] [Citation(s) in RCA: 11] [Impact Index Per Article: 2.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
We studied and compared the effect of tensile strain on the Raman spectra of black phosphorus (BP) and molybdenum ditelluride (MoTe2) crystals by using a simple custom strain device. In-situ Raman spectroscopy on BP revealed clear red shifting of all three phonon modes, A1 g, B2g and A2 g, under tensile stress. From our theoretical analyses, we found that such red shifting strongly depends on the direction of the strain exerted on the system even within the elastic deformation limit (i.e. strain ≤ 1 %). In particular, calculated results for the strain along the armchair direction are consistent with our experimental data, confirming that the strain applied to the sample acts effectively along the armchair direction. In a comparative study, we found that the effect of strain on the Raman shifting is larger for BP than that for MoTe2, presumably due to the smaller Young's modulus of BP. We also see a remarkable resemblance between donor-type intercalation induced vibrational properties and tensile stress-induced vibrational properties in BP. We anticipate that our method of in-situ Raman spectroscopy can be an effective tool that can allow observation of strain effect directly which is critical for future flexible electronic devices.
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Affiliation(s)
- Bhupendra Karki
- Department of Physics and Astronomy, University of Louisville, Louisville, KY 40292, United States of America
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13
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Zhang C, Wang Y, Ma J, Zhang Q, Wang F, Liu X, Xia T. Black phosphorus for fighting antibiotic-resistant bacteria: What is known and what is missing. THE SCIENCE OF THE TOTAL ENVIRONMENT 2020; 721:137740. [PMID: 32163736 DOI: 10.1016/j.scitotenv.2020.137740] [Citation(s) in RCA: 13] [Impact Index Per Article: 3.3] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/07/2020] [Revised: 03/03/2020] [Accepted: 03/03/2020] [Indexed: 06/10/2023]
Abstract
Recently, two-dimensional black phosphorus (BP) nanomaterial has captured much attention due to its superb physiochemical and electronic properties and various promising biomedical applications. However, relatively few studies have explored its antimicrobial properties, particularly for targeting antibiotic-resistant pathogens. A comprehensive understanding of the bactericidal mechanisms of BP is essential for application of this material as an antimicrobial. This review discusses the physicochemical and electronic properties of BP that are relevant for antimicrobial applications, especially the unique characteristics that may play a role in overcoming drug resistance. The literature is discussed in the context of what is known and what information is missing. We also highlight the differences and advantages of BP over other two-dimensional nanomaterials (i.e., graphene oxide and molybdenum disulfide) for bactericidal activity. Finally, we analyze existing challenges and note topics that require future investigation to overcome current inadequacies, aiming to assist the safe development of BP-based nanotechnology for pathogen control.
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Affiliation(s)
- Chengdong Zhang
- School of Environment, Beijing Normal University, Beijing 100875, China.
| | - Yating Wang
- School of Environment, Beijing Normal University, Beijing 100875, China
| | - Junjie Ma
- School of Environment, Beijing Normal University, Beijing 100875, China
| | - Qiurong Zhang
- College of Environmental Science and Engineering, Nankai University, Tianjin 300350, China
| | - Fang Wang
- School of Environment, Beijing Normal University, Beijing 100875, China
| | - Xinhui Liu
- School of Environment, Beijing Normal University, Beijing 100875, China
| | - Tian Xia
- Division of Nanomedicine, Department of Medicine, California NanoSystems Institute, University of California, Los Angeles, California 90095, United States
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14
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Thurakkal S, Zhang X. Recent Advances in Chemical Functionalization of 2D Black Phosphorous Nanosheets. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2020; 7:1902359. [PMID: 31993294 PMCID: PMC6974947 DOI: 10.1002/advs.201902359] [Citation(s) in RCA: 51] [Impact Index Per Article: 12.8] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/01/2019] [Revised: 10/10/2019] [Indexed: 05/25/2023]
Abstract
Owing to their tunable direct bandgap, high charge carrier mobility, and unique in-plane anisotropic structure, black phosphorus nanosheets (BPNSs) have emerged as one of the most important candidates among the 2D materials beyond graphene. However, the poor ambient stability of black phosphorus limits its practical application, due to the chemical degradation of phosphorus atoms to phosphorus oxides in the presence of oxygen and/or water. Chemical functionalization is demonstrated as an efficient approach to enhance the ambient stability of BPNSs. Herein, various covalent strategies including radical addition, nitrene addition, nucleophilic substitution, and metal coordination are summarized. In addition, efficient noncovalent functionalization methods such as van der Waals interactions, electrostatic interactions, and cation-π interactions are described in detail. Furthermore, the preparations, characterization, and diverse applications of functionalized BPNSs in various fields are recapped. The challenges faced and future directions for the chemical functionalization of BPNSs are also highlighted.
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Affiliation(s)
- Shameel Thurakkal
- Division of Chemistry and BiochemistryDepartment of Chemistry and Chemical EngineeringChalmers University of TechnologyKemigården 4SE‐412 96GöteborgSweden
| | - Xiaoyan Zhang
- Division of Chemistry and BiochemistryDepartment of Chemistry and Chemical EngineeringChalmers University of TechnologyKemigården 4SE‐412 96GöteborgSweden
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15
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Ghodrati H, Antonatos N, Sofer Z. Noncovalent Functionalization of Pnictogen Surfaces: From Small Molecules to 2D Heterostructures. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2019; 15:e1903495. [PMID: 31549789 DOI: 10.1002/smll.201903495] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/03/2019] [Revised: 08/08/2019] [Indexed: 06/10/2023]
Abstract
Beyond graphene, 2D pnictogen polymers are rapidly growing among the family of 2D materials. Due to their unique properties, this group has received considerable interest in recent years. Those properties include tunable electronic band gaps, high charge carrier mobility, and in-plane anisotropic properties. This Review covers the noncovalent functionalization of pnictogen surfaces considering experimental and theoretical studies. Noncovalent functionalization is of great importance for effective modulation of the electronic structure of these materials as well as improvement of their stability toward surface oxidation. This Review highlights their noncovalent modification by organic molecules, in which enhanced surface stability of phosphorene and generated functionalized materials for applications in biomedical, supercapacitors, energy storage, and biosensors. Moreover, the noncovalent interactions with small molecules show its significance for sensing applications. Lastly, the interactions of pnictogen sheets with other 2D materials and their applications for van der Waals heterostructure formation are discussed. Current state-of-the-art as well as future perspectives in this field are covered.
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Affiliation(s)
- Hanieh Ghodrati
- Department of Inorganic Chemistry, University of Chemistry and Technology Prague, Technická 5, 166 28, Prague 6, Czech Republic
- Department of Physical Chemistry, University of Chemistry and Technology Prague, Technická 5, 166 28, Prague 6, Czech Republic
| | - Nikolas Antonatos
- Department of Inorganic Chemistry, University of Chemistry and Technology Prague, Technická 5, 166 28, Prague 6, Czech Republic
| | - Zdeněk Sofer
- Department of Inorganic Chemistry, University of Chemistry and Technology Prague, Technická 5, 166 28, Prague 6, Czech Republic
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16
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Huang H, Jiang B, Zou X, Zhao X, Liao L. Black phosphorus electronics. Sci Bull (Beijing) 2019; 64:1067-1079. [PMID: 36659766 DOI: 10.1016/j.scib.2019.02.015] [Citation(s) in RCA: 12] [Impact Index Per Article: 2.4] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/04/2018] [Revised: 01/23/2019] [Accepted: 02/12/2019] [Indexed: 01/21/2023]
Abstract
As the scaling of silicon-based field-effect transistors has approached its physical limits, the search for alternative channel materials for future logic devices has attracted much attention. The discovery of graphene has unveiled another material family with layered structures called two-dimensional (2D) materials. Black phosphorus (BP), the most stable allotrope of phosphorus, was introduced as a new type of 2D material in 2014. Thanks to its high mobility, in-plane anisotropy and direct band gap, BP is considered to be a promising candidate for next-generation electronic and optoelectronic devices. Numerous studies have demonstrated the beneficial effects of introducing BP for device architectures. Herein, we present a review outlining recent progress towards high performance BP-based transistors. This review starts with the fundamental properties of BP, including its crystal structure, bandgap, and direct current (DC) and radio-frequency (RF) characteristics, followed by a detailed description of the modulation and application of those properties, involving anisotropy, functionalization and superlattices. Furthermore, we also discuss device design for high-performance transistors, with particular emphasis on interface engineering and device stability. Finally, we offer our perspective on the future of BP electronics, aiming to benefit colleagues who are interested in this exciting research field.
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Affiliation(s)
- Hao Huang
- School of Physics and Technology, Wuhan University, Wuhan 430072, China
| | - Bei Jiang
- School of Physics and Technology, Wuhan University, Wuhan 430072, China
| | - Xuming Zou
- Key Laboratory for Micro/Nano-Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha 410082, China.
| | - Xingzhong Zhao
- Key Laboratory for Micro/Nano-Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha 410082, China.
| | - Lei Liao
- School of Physics and Technology, Wuhan University, Wuhan 430072, China; Key Laboratory for Micro/Nano-Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha 410082, China.
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17
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Zhuge Z, Tang Y, Tao J, Zhao Y. Functionalized Black Phosphorus Nanocomposite for Biosensing. ChemElectroChem 2019. [DOI: 10.1002/celc.201801439] [Citation(s) in RCA: 22] [Impact Index Per Article: 4.4] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/10/2022]
Affiliation(s)
- Zhen Zhuge
- School of Chemical and Environmental EngineeringShanghai Institute of Technology Shanghai 201418 China
| | - Yi‐Hong Tang
- School of Chemical and Environmental EngineeringShanghai Institute of Technology Shanghai 201418 China
| | - Jian‐Wei Tao
- School of Chemical and Environmental EngineeringShanghai Institute of Technology Shanghai 201418 China
| | - Yun Zhao
- School of Chemical and Environmental EngineeringShanghai Institute of Technology Shanghai 201418 China
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Abate Y, Akinwande D, Gamage S, Wang H, Snure M, Poudel N, Cronin SB. Recent Progress on Stability and Passivation of Black Phosphorus. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2018; 30:e1704749. [PMID: 29749007 DOI: 10.1002/adma.201704749] [Citation(s) in RCA: 127] [Impact Index Per Article: 21.2] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/20/2017] [Revised: 12/29/2017] [Indexed: 05/08/2023]
Abstract
From a fundamental science perspective, black phosphorus (BP) is a canonical example of a material that possesses fascinating surface and electronic properties. It has extraordinary in-plane anisotropic electrical, optical, and vibrational states, as well as a tunable band gap. However, instability of the surface due to chemical degradation in ambient conditions remains a major impediment to its prospective applications. Early studies were limited by the degradation of black phosphorous surfaces in air. Recently, several robust strategies have been developed to mitigate these issues, and these novel developments can potentially allow researchers to exploit the extraordinary properties of this material and devices made out of it. Here, the fundamental chemistry of BP degradation and the tremendous progress made to address this issue are extensively reviewed. Device performances of encapsulated BP are also compared with nonencapsulated BP. In addition, BP possesses sensitive anisotropic photophysical surface properties such as excitons, surface plasmons/phonons, and topologically protected and Dirac semi-metallic surface states. Ambient degradation as well as any passivation method used to protect the surface could affect the intrinsic surface properties of BP. These properties and the extent of their modifications by both the degradation and passivation are reviewed.
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Affiliation(s)
- Yohannes Abate
- Department of Physics and Astronomy, University of Georgia, Athens, GA, 30602, USA
| | - Deji Akinwande
- Department of Electrical and Computer Engineering, University of Texas at Austin, Austin, TX, 78758, USA
| | - Sampath Gamage
- Department of Physics and Astronomy, Georgia State University, Atlanta, GA, 30303, USA
| | - Han Wang
- Viterbi School of Engineering University of Southern California, Los Angeles, CA, 90089, USA
| | - Michael Snure
- Air Force Research Laboratory, Wright Patterson Air Force Base, OH, 45433, USA
| | - Nirakar Poudel
- Viterbi School of Engineering University of Southern California, Los Angeles, CA, 90089, USA
| | - Stephen B Cronin
- Viterbi School of Engineering University of Southern California, Los Angeles, CA, 90089, USA
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