1
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Tan C, Yang Z, Wu H, Yang Y, Yang L, Wang Z. Electrically tunable interlayer recombination and tunneling behavior in WSe 2/MoS 2 heterostructure for broadband photodetector. NANOSCALE 2024; 16:6241-6248. [PMID: 38449431 DOI: 10.1039/d3nr06144b] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 03/08/2024]
Abstract
Electrically tunable band structure and light-matter interaction are of great importance in designing novel devices and constructing high-integrated and high-performance photodetector systems in the future. However, tunable mechanisms on the layered semiconductor, especially the heterojunction, are still unclear. Herein, the WSe2/MoS2 phototransistor with dual-gated configuration is fabricated, and its electrical and photoelectrical conversion has been studied to show large tunability. It was found that conduction and rectification characteristics can be tuned by dual gates showing four states, p-i, p-n, i-n, and n-n, as a result of the charging and depletion of WSe2 and MoS2. The rectifying ratio can be modulated across a large range from 102.5 to 10-3.2. Its photoelectronic characteristics were observed to exhibit bipolar and wavelength-dependent behaviors. The interlayer recombination of charge carriers dominates the photoresponse of the device under the illumination of visible light, while it is dominated by interlayer tunneling under the illumination of near-infrared wavelengths. This bipolar photoresponse is associated with different states of band alignment, which can be switched by dual-gating modulation. Finally, by tuning the gate voltage, responsivities reach 27 445 A W-1 and 2827 A W-1 at wavelengths of 400 and 1010 nm at room temperature, respectively, which directly extends the response region from visible light to near-infrared.
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Affiliation(s)
- Chao Tan
- College of Materials Science and Engineering, Sichuan University, Chengdu 610065, China.
| | - Zhihao Yang
- College of Materials Science and Engineering, Sichuan University, Chengdu 610065, China.
| | - Haijuan Wu
- College of Materials Science and Engineering, Sichuan University, Chengdu 610065, China.
| | - Yong Yang
- State Key Laboratory of Solidification Processing, Center of Advanced Lubrication and Seal Materials, Northwestern Polytechnical University, Xi'an, 710072, People's Republic of China
| | - Lei Yang
- College of Materials Science and Engineering, Sichuan University, Chengdu 610065, China.
| | - Zegao Wang
- College of Materials Science and Engineering, Sichuan University, Chengdu 610065, China.
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2
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Chava P, Kateel V, Watanabe K, Taniguchi T, Helm M, Mikolajick T, Erbe A. Electrical characterization of multi-gated WSe 2/MoS 2 van der Waals heterojunctions. Sci Rep 2024; 14:5813. [PMID: 38461196 PMCID: PMC10925069 DOI: 10.1038/s41598-024-56455-x] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/14/2023] [Accepted: 03/06/2024] [Indexed: 03/11/2024] Open
Abstract
Vertical stacking of different two-dimensional (2D) materials into van der Waals heterostructures exploits the properties of individual materials as well as their interlayer coupling, thereby exhibiting unique electrical and optical properties. Here, we study and investigate a system consisting entirely of different 2D materials for the implementation of electronic devices that are based on quantum mechanical band-to-band tunneling transport such as tunnel diodes and tunnel field-effect transistors. We fabricated and characterized van der Waals heterojunctions based on semiconducting layers of WSe2 and MoS2 by employing different gate configurations to analyze the transport properties of the junction. We found that the device dielectric environment is crucial for achieving tunneling transport across the heterojunction by replacing thick oxide dielectrics with thin layers of hexagonal-boronnitride. With the help of additional top gates implemented in different regions of our heterojunction device, it was seen that the tunneling properties as well as the Schottky barriers at the contact interfaces could be tuned efficiently by using layers of graphene as an intermediate contact material.
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Affiliation(s)
- Phanish Chava
- Institute of Ion Beam Physics and Materials Research, Helmholtz Zentrum Dresden-Rossendorf, 01328, Dresden, Germany.
- Faculty of Electrical and Computer Engineering, Technische Universität Dresden, 01062, Dresden, Germany.
| | - Vaishnavi Kateel
- Institute of Ion Beam Physics and Materials Research, Helmholtz Zentrum Dresden-Rossendorf, 01328, Dresden, Germany
| | - Kenji Watanabe
- Research Center for Electronic and Optical Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba, 305-0044, Japan
| | - Takashi Taniguchi
- Research Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba, 305-0044, Japan
| | - Manfred Helm
- Institute of Ion Beam Physics and Materials Research, Helmholtz Zentrum Dresden-Rossendorf, 01328, Dresden, Germany
| | - Thomas Mikolajick
- Faculty of Electrical and Computer Engineering, Technische Universität Dresden, 01062, Dresden, Germany
- NaMLab gGmbH, 01187, Dresden, Germany
| | - Artur Erbe
- Institute of Ion Beam Physics and Materials Research, Helmholtz Zentrum Dresden-Rossendorf, 01328, Dresden, Germany
- Faculty of Electrical and Computer Engineering, Technische Universität Dresden, 01062, Dresden, Germany
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3
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Elahi E, Ahmad M, Dahshan A, Rabeel M, Saleem S, Nguyen VH, Hegazy HH, Aftab S. Contemporary innovations in two-dimensional transition metal dichalcogenide-based P-N junctions for optoelectronics. NANOSCALE 2023; 16:14-43. [PMID: 38018395 DOI: 10.1039/d3nr04547a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/30/2023]
Abstract
Two-dimensional transition metal dichalcogenides (2D-TMDCs) with various physical characteristics have attracted significant interest from the scientific and industrial worlds in the years following Moore's law. The p-n junction is one of the earliest electrical components to be utilized in electronics and optoelectronics, and modern research on 2D materials has renewed interest in it. In this regard, device preparation and application have evolved substantially in this decade. 2D TMDCs provide unprecedented flexibility in the construction of innovative p-n junction device designs, which is not achievable with traditional bulk semiconductors. It has been investigated using 2D TMDCs for various junctions, including homojunctions, heterojunctions, P-I-N junctions, and broken gap junctions. To achieve high-performance p-n junctions, several issues still need to be resolved, such as developing 2D TMDCs of superior quality, raising the rectification ratio and quantum efficiency, and successfully separating the photogenerated electron-hole pairs, among other things. This review comprehensively details the various 2D-based p-n junction geometries investigated with an emphasis on 2D junctions. We investigated the 2D p-n junctions utilized in current rectifiers and photodetectors. To make a comparison of various devices easier, important optoelectronic and electronic features are presented. We thoroughly assessed the review's prospects and challenges for this emerging field of study. This study will serve as a roadmap for more real-world photodetection technology applications.
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Affiliation(s)
- Ehsan Elahi
- Department of Physics & Astronomy and Graphene Research Institute, Sejong University, 209 Neungdong-ro, Gwangjin-Gu, Seoul 05006, South Korea.
| | - Muneeb Ahmad
- Department of Electrical Engineering and Convergence Engineering for Intelligent Drone, Sejong University, 209 Neungdong-ro, Gwangjin-Gu, Seoul 05006, South Korea
| | - A Dahshan
- Department of Physics, Faculty of Science, King Khalid University, P.O. Box 9004, Abha, Saudi Arabia
| | - Muhammad Rabeel
- Department of Electrical Engineering and Convergence Engineering for Intelligent Drone, Sejong University, 209 Neungdong-ro, Gwangjin-Gu, Seoul 05006, South Korea
| | - Sidra Saleem
- Division of Science Education, Department of Energy Storage/Conversion Engineering for Graduate School, Jeonbuk National University, Jeonju, Jeonbuk 54896, Republic of Korea
| | - Van Huy Nguyen
- Department of Nanotechnology and Advanced Materials Engineering, and H.M.C., Sejong University, Seoul 05006, South Korea
| | - H H Hegazy
- Department of Physics, Faculty of Science, King Khalid University, P.O. Box 9004, Abha, Saudi Arabia
- Research Centre for Advanced Materials Science (RCAMS), King Khalid University, P. O. Box 9004, Abha 61413, Saudi Arabia
| | - Sikandar Aftab
- Department of Intelligent Mechatronics Engineering, Sejong University, 209 Neungdong-ro, Gwangjin-Gu, Seoul, 05006 South Korea.
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Xiao Y, Qu J, Luo Z, Chen Y, Yang X, Zhang D, Li H, Zheng B, Yi J, Wu R, You W, Liu B, Chen S, Pan A. Van der Waals epitaxial growth and optoelectronics of a vertical MoS 2/WSe 2 p-n junction. FRONTIERS OF OPTOELECTRONICS 2022; 15:41. [PMID: 36637698 PMCID: PMC9756242 DOI: 10.1007/s12200-022-00041-4] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 04/14/2022] [Accepted: 04/21/2022] [Indexed: 06/17/2023]
Abstract
Two-dimensional (2D) transition metal dichalcogenides (TMDs) have attracted extensive attention due to their unique electronic and optical properties. In particular, TMDs can be flexibly combined to form diverse vertical van der Waals (vdWs) heterostructures without the limitation of lattice matching, which creates vast opportunities for fundamental investigation of novel optoelectronic applications. Here, we report an atomically thin vertical p-n junction WSe2/MoS2 produced by a chemical vapor deposition method. Transmission electron microscopy and steady-state photoluminescence experiments reveal its high quality and excellent optical properties. Back gate field effect transistor (FET) constructed using this p-n junction exhibits bipolar behaviors and a mobility of 9 cm2/(V·s). In addition, the photodetector based on MoS2/WSe2 heterostructures displays outstanding optoelectronic properties (R = 8 A/W, D* = 2.93 × 1011 Jones, on/off ratio of 104), which benefited from the built-in electric field across the interface. The direct growth of TMDs p-n vertical heterostructures may offer a novel platform for future optoelectronic applications.
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Affiliation(s)
- Yu Xiao
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, Hunan University, Changsha, 410082, China
| | - Junyu Qu
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, Hunan University, Changsha, 410082, China
| | - Ziyu Luo
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, Hunan University, Changsha, 410082, China
| | - Ying Chen
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, Hunan University, Changsha, 410082, China
| | - Xin Yang
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, Hunan University, Changsha, 410082, China
| | - Danliang Zhang
- School of Materials Science and Engineering, Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, Hunan University, Changsha, 410082, China
| | - Honglai Li
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, Hunan University, Changsha, 410082, China
| | - Biyuan Zheng
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, Hunan University, Changsha, 410082, China
| | - Jiali Yi
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, Hunan University, Changsha, 410082, China
| | - Rong Wu
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, Hunan University, Changsha, 410082, China
| | - Wenxia You
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, Hunan University, Changsha, 410082, China
| | - Bo Liu
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, Hunan University, Changsha, 410082, China
| | - Shula Chen
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, Hunan University, Changsha, 410082, China.
| | - Anlian Pan
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, Hunan University, Changsha, 410082, China.
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5
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Zou H, Wang X, Zhou K, Li Y, Fu Y, Zhang L. Electronic property modulation in two-dimensional lateral superlattices of monolayer transition metal dichalcogenides. NANOSCALE 2022; 14:10439-10448. [PMID: 35816154 DOI: 10.1039/d2nr02189g] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Fabricating lateral heterostructures (HSs) and superlattices (SLs) provides a unique degree of freedom for modulating the physical properties of two-dimensional (2D) materials by varying the chemical component, geometric size and interface structure in the ultra-thin atomic thickness limit. While a variety of 2D lateral HSs/SLs have been synthesized, especially for transition metal dichalcogenides (TMDs), how such structures affect quantitatively the physical properties of 2D materials has not yet been established. We herein explore electronic property modulation in 2D lateral SLs of monolayer TMDs through first-principles high-throughput calculations. The dependence of the electronic structure, bandgap, carrier effective masses, charge density overlap on chemical components, interface type, and sub-lattice size of lateral TMD-SLs are investigated. We find that by comparison with their random alloy counterparts, the lateral TMD-SLs exhibit generally type-II band alignment, a wider range of bandgap tunability, larger carrier effective masses, and stronger electron-hole charge separation tendency. The bandgap variation with a sub-lattice size shows larger bowing parameters for the SLs with heterogeneous anions, by comparison with the homogeneous anion cases. A similar behavior is observed for the SLs with an armchair-type interface, by comparison with the zigzag-type interface cases. Further analyses reveal that the underlying physical mechanism can be attributed to the synergistic interplay among the band offset of sub-lattices, quantum confinement effect, and existing internal strain.
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Affiliation(s)
- Hongshuai Zou
- State Key Laboratory of Integrated Optoelectronics, Key Laboratory of Automobile Materials of MOE and College of Materials Science and Engineering, Jilin University, Changchun 130012, China.
| | - Xinjiang Wang
- State Key Laboratory of Superhard Materials, College of Physics, Jilin University, Changchun 130012, China.
| | - Kun Zhou
- State Key Laboratory of Integrated Optoelectronics, Key Laboratory of Automobile Materials of MOE and College of Materials Science and Engineering, Jilin University, Changchun 130012, China.
| | - Yawen Li
- State Key Laboratory of Integrated Optoelectronics, Key Laboratory of Automobile Materials of MOE and College of Materials Science and Engineering, Jilin University, Changchun 130012, China.
| | - Yuhao Fu
- State Key Laboratory of Superhard Materials, College of Physics, Jilin University, Changchun 130012, China.
| | - Lijun Zhang
- State Key Laboratory of Integrated Optoelectronics, Key Laboratory of Automobile Materials of MOE and College of Materials Science and Engineering, Jilin University, Changchun 130012, China.
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6
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Ghosh S, Varghese A, Jawa H, Yin Y, Medhekar NV, Lodha S. Polarity-Tunable Photocurrent through Band Alignment Engineering in a High-Speed WSe 2/SnSe 2 Diode with Large Negative Responsivity. ACS NANO 2022; 16:4578-4587. [PMID: 35188740 DOI: 10.1021/acsnano.1c11110] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Excellent light-matter interaction and a wide range of thickness-tunable bandgaps in layered vdW materials coupled by the facile fabrication of heterostructures have enabled several avenues for optoelectronic applications. Realization of high photoresponsivity at fast switching speeds is a critical challenge for 2D optoelectronics to enable high-performance photodetection for optical communication. Moving away from conventional type-II heterostructure pn junctions towards a WSe2/SnSe2 type-III configuration, we leverage the steep change in tunneling current along with a light-induced heterointerface band shift to achieve high negative photoresponsivity, while the fast carrier transport under tunneling results in high speed. In addition, the photocurrent can be controllably switched from positive to negative values, with ∼104× enhancement in responsivity, by engineering the band alignment from type-II to type-III using either the drain or the gate bias. This is further reinforced by electric-field dependent interlayer band structure calculations using density functional theory. The high negative responsivity of 2 × 104 A/W and fast response time of ∼1 μs coupled with a polarity-tunable photocurrent can lead to the development of next-generation multifunctional optoelectronic devices.
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Affiliation(s)
- Sayantan Ghosh
- Department of Electrical Engineering, IIT Bombay, Mumbai 400076, India
| | - Abin Varghese
- Department of Electrical Engineering, IIT Bombay, Mumbai 400076, India
- Department of Materials Science and Engineering, Monash University, Clayton, Victoria 3800, Australia
- IITB-Monash Research Academy, IIT Bombay, Mumbai 400076, India
| | - Himani Jawa
- Department of Electrical Engineering, IIT Bombay, Mumbai 400076, India
| | - Yuefeng Yin
- Department of Materials Science and Engineering, Monash University, Clayton, Victoria 3800, Australia
| | - Nikhil V Medhekar
- Department of Materials Science and Engineering, Monash University, Clayton, Victoria 3800, Australia
| | - Saurabh Lodha
- Department of Electrical Engineering, IIT Bombay, Mumbai 400076, India
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7
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First-Principles Study on the Effect of Strain on Single-Layer Molybdenum Disulfide. NANOMATERIALS 2021; 11:nano11113127. [PMID: 34835891 PMCID: PMC8624396 DOI: 10.3390/nano11113127] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 10/22/2021] [Revised: 11/16/2021] [Accepted: 11/18/2021] [Indexed: 12/05/2022]
Abstract
By adopting the first-principles plane wave pseudopotential method based on density functional theory, the electronic structure properties of single-layer MoS2 (molybdenum disulfide) crystals under biaxial strain are studied. The calculation results in this paper show that when a small strain is applied to a single-layer MoS2, its band structure changes from a direct band gap to an indirect band gap. As the strain increases, the energy band still maintains the characteristics of the indirect band gap, and the band gap shows a linear downward trend. Through further analysis of the density of states, sub-orbital density of states, thermodynamic parameters and Raman spectroscopy, it revealed the variation of single-layer MoS2 with strain. This provides a theoretical basis for realizing the strain regulation of MoS2.
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8
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Sun Y, Hu R, An C, Ma X, Zhang J, Liu J. Visible to near-infrared photodetector based on SnSe 2/WSe 2heterojunction with potential application in artificial visual neuron. NANOTECHNOLOGY 2021; 32:475206. [PMID: 34375957 DOI: 10.1088/1361-6528/ac1c26] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/07/2021] [Accepted: 08/09/2021] [Indexed: 06/13/2023]
Abstract
Two-dimensional (2d) transition-metal dichalcogenides (TMDCs) are promising candidate materials for developing next generation nano optoelectronic devices, due to their strong interaction with light. In addition, the free of surface dangling bonds makes it possible to stacking any different types of 2D TMDCs together to form heterojunctions with desirable band structures for various applications. However, most of the 2D TMDCs are bipolar or strong unipolar n-type doped, while very few of them show weak p-type doping, which severely affects the performance of the formed heterojunctions. In this work, we fabricated a SnSe2/WSe2heterojunction of type II band alignment with a small bandgap of ∼0.1 eV, which is ideally for developing optoelectronic devices responsible to a broad light spectrum. N2O plasma treatment is applied to enhance the p-type doping of both WSe2and SnSe2, which results in the increased on-off ratio of n-type SnSe2by 50 times and the hole mobility of WSe2by 527 times. The WSe2/SnSe2heterostructure also achieves a decent performance as a p-n junction, which exhibits photo responsivity of 450 mA W-1and 133 mA W-1for 700 nm visible light and 1600 nm infrared light, respectively, without any gate or source-drain bias, showing great photovoltaic effect. Moreover, the heterojunction shows great promise as an artificial visual neuron, which can differentiate the dark, visible and infrared light illumination conditions by applying a series of electrical pulses through the back-gate electrode.
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Affiliation(s)
- Yang Sun
- State Key Laboratory of Precision Measurement Technology and Instrument, School of Precision Instruments and Opto-electronics Engineering, Tianjin University, No. 92 Weijin Road, Tianjin, 300072, People's Republic of China
| | - Ruixue Hu
- State Key Laboratory of Precision Measurement Technology and Instrument, School of Precision Instruments and Opto-electronics Engineering, Tianjin University, No. 92 Weijin Road, Tianjin, 300072, People's Republic of China
| | - Chunhua An
- State Key Laboratory of Precision Measurement Technology and Instrument, School of Precision Instruments and Opto-electronics Engineering, Tianjin University, No. 92 Weijin Road, Tianjin, 300072, People's Republic of China
| | - Xinli Ma
- State Key Laboratory of Precision Measurement Technology and Instrument, School of Precision Instruments and Opto-electronics Engineering, Tianjin University, No. 92 Weijin Road, Tianjin, 300072, People's Republic of China
| | - Jing Zhang
- State Key Laboratory of Precision Measurement Technology and Instrument, School of Precision Instruments and Opto-electronics Engineering, Tianjin University, No. 92 Weijin Road, Tianjin, 300072, People's Republic of China
| | - Jing Liu
- State Key Laboratory of Precision Measurement Technology and Instrument, School of Precision Instruments and Opto-electronics Engineering, Tianjin University, No. 92 Weijin Road, Tianjin, 300072, People's Republic of China
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9
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Tan C, Yin S, Chen J, Lu Y, Wei W, Du H, Liu K, Wang F, Zhai T, Li L. Broken-Gap PtS 2/WSe 2 van der Waals Heterojunction with Ultrahigh Reverse Rectification and Fast Photoresponse. ACS NANO 2021; 15:8328-8337. [PMID: 33645213 DOI: 10.1021/acsnano.0c09593] [Citation(s) in RCA: 43] [Impact Index Per Article: 14.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Broken-gap van der Waals (vdW) heterojunctions based on 2D materials are promising structures to fabricate high-speed switching and low-power multifunctional devices thanks to its charge transport versus quantum tunneling mechanism. However, the tunneling current is usually generated under both positive and negative bias voltage, resulting in small rectification and photocurrent on/off ratio. In this paper, we report a broken-gap vdW heterojunction PtS2/WSe2 with a bilateral accumulation region design and a big band offset by utilizing thick PtS2 as an effective carrier-selective contact, which exhibits an ultrahigh reverser rectification ratio approaching 108 and on/off ratio over 108 at room temperature. We also find excellent photodetection properties in such a heterodiode with a large photocurrent on/off ratio over 105 due to its ultralow forward current and a comparable photodetectivity of 3.8 × 1010 Jones. In addition, the response time of such a photodetector reaches 8 μs owing to the photoinduced tunneling mechanism and reduced interface trapping effect. The proposed heterojunction not only demonstrates the high-performance broken-gap heterodiode but also provides in-depth understanding of the tunneling mechanism in the development of future electronic and optoelectronic applications.
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Affiliation(s)
- Chaoyang Tan
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Institutes of Physical Science and Information Technology, Anhui University, Hefei 230601, People's Republic of China
| | - Shiqi Yin
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Institutes of Physical Science and Information Technology, Anhui University, Hefei 230601, People's Republic of China
| | - Jiawang Chen
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Institutes of Physical Science and Information Technology, Anhui University, Hefei 230601, People's Republic of China
| | - Yuan Lu
- Infrared and Low Temperature Plasma Key Laboratory of Anhui Province, National University of Defense Technology (NUDT), Hefei 230037, People's Republic of China
- State Key Laboratory of Pulsed Power Laser Technology, National University of Defense Technology (NUDT), Hefei 230037, People's Republic of China
| | - Wensen Wei
- Anhui Province Key Laboratory of Condensed Matter Physics at Extreme Conditions, High Magnetic Field Laboratory of the Chinese Academy of Science, Hefei 230031, People's Republic of China
| | - Haifeng Du
- Anhui Province Key Laboratory of Condensed Matter Physics at Extreme Conditions, High Magnetic Field Laboratory of the Chinese Academy of Science, Hefei 230031, People's Republic of China
| | - Kailang Liu
- State Key Laboratory of Materials Processing and Die and Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology (HUST), Wuhan 430074, People's Republic of China
| | - Fakun Wang
- State Key Laboratory of Materials Processing and Die and Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology (HUST), Wuhan 430074, People's Republic of China
| | - Tianyou Zhai
- State Key Laboratory of Materials Processing and Die and Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology (HUST), Wuhan 430074, People's Republic of China
| | - Liang Li
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Institutes of Physical Science and Information Technology, Anhui University, Hefei 230601, People's Republic of China
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10
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Son H, Choi H, Jeon J, Kim YJ, Choi S, Cho JH, Lee S. Complementary Driving between 2D Heterostructures and Surface Functionalization for Surpassing Binary Logic Devices. ACS APPLIED MATERIALS & INTERFACES 2021; 13:8692-8699. [PMID: 33586957 DOI: 10.1021/acsami.0c17739] [Citation(s) in RCA: 7] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Recently, for overcoming the fundamental limits of conventional silicon technology, multivalued logic (MVL) circuits based on two-dimensional (2D) materials have received significant attention for reducing the power consumption and the complexity of integrated circuits. Compared with the conventional silicon complementary metal oxide semiconductor technology, new functional heterostructures comprising 2D materials can be readily implemented, owing to their unique inherent electrical properties. Furthermore, their process integration does not pose issues of lattice mismatch at junction interfaces. This facilitates the realization of new functional logic gate circuit configurations. However, the reported three-valued NOT gates (ternary inverters) based on 2D materials require stringent operating conditions and complex fabrication processes to obtain three distinct logic states. Herein, a general structure of MVL devices based on a simple series connection of 2D materials with partial surface functionalization is demonstrated. By arranging three 2D materials exhibiting p-type, ambipolar, and n-type conductivities, ternary inverter circuits can be established based on the complementary driving between 2D heterotransistors. This ternary inverter circuit can be further improved for quaternary inverter circuits by controlling the charge neutral point of partial ambipolar 2D materials using surface functionalization, which is an effective and nondestructive doping method for 2D materials.
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Affiliation(s)
- Hyeonje Son
- SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon 440-746, Korea
| | - Haeju Choi
- SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon 440-746, Korea
| | - Jaeho Jeon
- SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon 440-746, Korea
| | - Young Jae Kim
- SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon 440-746, Korea
| | - Seunghyuk Choi
- SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon 440-746, Korea
| | - Jeong Ho Cho
- Department of Chemical Engineering, Yonsei University, Seoul 03722, Korea
| | - Sungjoo Lee
- SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon 440-746, Korea
- Department of Nano Engineering, Sungkyunkwan University, Suwon 440-746, Korea
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11
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Nakamura K, Nagamura N, Ueno K, Taniguchi T, Watanabe K, Nagashio K. All 2D Heterostructure Tunnel Field-Effect Transistors: Impact of Band Alignment and Heterointerface Quality. ACS APPLIED MATERIALS & INTERFACES 2020; 12:51598-51606. [PMID: 33146991 DOI: 10.1021/acsami.0c13233] [Citation(s) in RCA: 13] [Impact Index Per Article: 3.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Van der Waals heterostructures are the ideal material platform for tunnel field-effect transistors (TFETs) because a band-to-band tunneling (BTBT) dominant current is feasible at room temperature (RT) because of ideal, dangling bond-free heterointerfaces. However, achieving subthreshold swing (SS) values lower than 60 mV dec-1 of the Boltzmann limit is still challenging. In this work, we systematically studied the band alignment and heterointerface quality in n-MoS2 channel heterostructure TFETs. By selecting a p+-MoS2 source with a sufficiently high doping level, stable gate modulation to a type III band alignment was achieved regardless of the number of MoS2 channel layers. For the gate stack formation, it was found that the deposition of Al2O3 as the top gate introduces defect states for the generation current under reverse bias, while the integration of a hexagonal boron nitride (h-BN) top gate provides a defect-free, clean interface, resulting in the BTBT dominant current even at RT. All 2D heterostructure TFETs produced by combining the type III n-MoS2/p+-MoS2 heterostructure with the h-BN top-gate insulator resulted in low SS values at RT.
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Affiliation(s)
- Keigo Nakamura
- Department of Materials Engineering, The University of Tokyo, Tokyo 113-8656, Japan
| | - Naoka Nagamura
- National Institute for Materials Science, Ibaraki 305-0044, Japan
- PRESTO, Japan Science and Technology Agency (JST), Saitama 332-0012, Japan
| | - Keiji Ueno
- Department of Chemistry, Saitama University, Saitama 338-8570, Japan
| | | | - Kenji Watanabe
- National Institute for Materials Science, Ibaraki 305-0044, Japan
| | - Kosuke Nagashio
- Department of Materials Engineering, The University of Tokyo, Tokyo 113-8656, Japan
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12
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Lee J, Duong NT, Bang S, Park C, Nguyen DA, Jeon H, Jang J, Oh HM, Jeong MS. Modulation of Junction Modes in SnSe 2/MoTe 2 Broken-Gap van der Waals Heterostructure for Multifunctional Devices. NANO LETTERS 2020; 20:2370-2377. [PMID: 32031411 DOI: 10.1021/acs.nanolett.9b04926] [Citation(s) in RCA: 8] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/13/2023]
Abstract
We study the electronic and optoelectronic properties of a broken-gap heterojunction composed of SnSe2 and MoTe2 with gate-controlled junction modes. Owing to the interband tunneling current, our device can act as an Esaki diode and a backward diode with a peak-to-valley current ratio approaching 5.7 at room temperature. Furthermore, under an 811 nm laser irradiation the heterostructure exhibits a photodetectivity of up to 7.5 × 1012 Jones. In addition, to harness the electrostatic gate bias, Voc can be tuned from negative to positive by switching from the accumulation mode to the depletion mode of the heterojunction. Additionally, a photovoltaic effect with a fill factor exceeding 41% was observed, which highlights the significant potential for optoelectronic applications. This study not only demonstrates high-performance multifunctional optoelectronics based on the SnSe2/MoTe2 heterostructure but also provides a comprehensive understanding of broken-band alignment and its applications.
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Affiliation(s)
- Juchan Lee
- Department of Energy Science, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Ngoc Thanh Duong
- Department of Energy Science, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Seungho Bang
- Department of Energy Science, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Chulho Park
- Department of Energy Science, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Duc Anh Nguyen
- Department of Energy Science, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Hobeom Jeon
- Department of Energy Science, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Jiseong Jang
- Department of Energy Science, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Hye Min Oh
- Department of Energy Science, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Mun Seok Jeong
- Department of Energy Science, Sungkyunkwan University, Suwon 16419, Republic of Korea
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13
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Mukherjee S, Jana S, Sinha TK, Das S, Ray SK. Infrared tunable, two colour-band photodetectors on flexible platforms using 0D/2D PbS-MoS 2 hybrids. NANOSCALE ADVANCES 2019; 1:3279-3287. [PMID: 36133580 PMCID: PMC9419818 DOI: 10.1039/c9na00302a] [Citation(s) in RCA: 13] [Impact Index Per Article: 2.6] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/15/2019] [Accepted: 07/10/2019] [Indexed: 05/02/2023]
Abstract
Two-dimensional (2D) MoS2 nanosheets have been integrated with zero-dimensional (0D) PbS quantum dots to achieve a superior optical response extending to the short-wavelength infrared region along with a broadband visible response for multispectral photodetection. The 0D/2D hybrid nanostructures have been synthesized by a one pot, stabilizer-free solvothermal growth process. Microscopic and spectroscopic studies confirmed the formation of PbS QD decorated semiconducting 2H-MoS2 layers. The size tunable absorption features with longer photo-generated carrier lifetime of synthesized hybrid nanostructures indicate that the integration of PbS QDs in MoS2 could be a viable approach for fabricating two-colour band photodetectors, viz. visible broadband and wavelength selective short-wave IR photodetectors. Devices have also been demonstrated on polyethylene terephthalate substrates using a solution-based synthesis technique for flexible and ultrathin optoelectronic device applications. The photodetection performance of fabricated devices suggests that the synergic 0D/2D hybrid nanostructures are significantly superior to solution processed hybrid devices operating in the infrared region. The successful integration of 0D QDs in 2D materials may pave the way for novel, high performance, next-generation CMOS compatible flexible photonic devices.
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Affiliation(s)
- S Mukherjee
- Department of Physics, Indian Institute of Technology Kharagpur India-721302
| | - S Jana
- Department of Physics, Indian Institute of Technology Kharagpur India-721302
| | - T K Sinha
- Department of Physics, Indian Institute of Technology Kharagpur India-721302
| | - S Das
- School of Medical Science & Technology, Indian Institute of Technology Kharagpur India-721302
| | - S K Ray
- Department of Physics, Indian Institute of Technology Kharagpur India-721302
- S. N. Bose National Centre for Basic Sciences Salt Lake Kolkata India-700 106
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14
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Li H, Huang Z, Lang Y, Wang X, Zhu H, Shen Z, Guan H, Hong J, Gui X, Qiu W, Lu H, Dong J, Zhu W, Yu J, Luo Y, Chen Z. Broadband all-light-control with WS 2 coated microfibers. OPTICS EXPRESS 2019; 27:12817-12831. [PMID: 31052817 DOI: 10.1364/oe.27.012817] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/25/2019] [Accepted: 04/11/2019] [Indexed: 06/09/2023]
Abstract
All-optical light amplitude tuning functionality is demonstrated in a layered tungsten disulfide (WS2) nanosheets coated microfiber (MF) structure. Due to the strong light-matter interactions between WS2 nanosheets and the evanescent field around the MF, a large variation in the transmitted power can be observed under both external and internal pump light excitations over a broadband spectrum (~100 nm). A power variation rate of ~0.3744 dB/mW is obtained under external violet pump light excitation, whereas the power variation rate of similar devices in the state of the art are usually less than 0.3 dB/mW. In terms of the response time, a moderate rise/fall time of ∼20.5/19.6 ms is achieved, which is mainly limited by the employed structure fabrication methods. These results indicate that the optical transmitted power of the WS2 coated MF can be modulated by different pump light with the power in the order of mW, thus the proposed device might have potential applications in all optical controllable devices and sensors, etc.
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15
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Cho Y, Park JH, Kim M, Jeong Y, Yu S, Lim JY, Yi Y, Im S. Impact of Organic Molecule-Induced Charge Transfer on Operating Voltage Control of Both n-MoS 2 and p-MoTe 2 Transistors. NANO LETTERS 2019; 19:2456-2463. [PMID: 30855970 DOI: 10.1021/acs.nanolett.9b00019] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.2] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
Since transition metal dichalcogenide (TMD) semiconductors are found as two-dimensional van der Waals materials with a discrete energy bandgap, many TMD based field effect transistors (FETs) are reported as prototype devices. However, overall reports indicate that threshold voltage ( Vth) of those FETs are located far away from 0 V whether the channel is p- or n-type. This definitely causes high switching voltage and unintended OFF-state leakage current. Here, a facile way to simultaneously modulate the Vth of both p- and n-channel FETs with TMDs is reported. The deposition of various organic small molecules on the channel results in charge transfer between the organic molecule and TMD channels. Especially, HAT-CN molecule is found to ideally work for both p- and n-channels, shifting their Vth toward 0 V concurrently. As a proof of concept, a complementary metal oxide semiconductor (CMOS) inverter with p-MoTe2 and n-MoS2 channels shows superior voltage gain and minimal power consumption after HAT-CN deposition, compared to its initial performance. When the same TMD FETs of the CMOS structure are integrated into an OLED pixel circuit for ambipolar switching, the circuit with HAT-CN film demonstrates complete ON/OFF switching of OLED pixel, which was not switched off without HAT-CN.
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Affiliation(s)
- Yongjae Cho
- Van der Waals Materials Research Center, Department of Physics and Applied Physics , Yonsei University , 50 Yonsei-ro , Seodaemun-gu , Seoul 03722 , Korea
| | - Ji Hoon Park
- Van der Waals Materials Research Center, Department of Physics and Applied Physics , Yonsei University , 50 Yonsei-ro , Seodaemun-gu , Seoul 03722 , Korea
| | - Minju Kim
- Van der Waals Materials Research Center, Department of Physics and Applied Physics , Yonsei University , 50 Yonsei-ro , Seodaemun-gu , Seoul 03722 , Korea
| | - Yeonsu Jeong
- Van der Waals Materials Research Center, Department of Physics and Applied Physics , Yonsei University , 50 Yonsei-ro , Seodaemun-gu , Seoul 03722 , Korea
| | - Sanghyuck Yu
- Van der Waals Materials Research Center, Department of Physics and Applied Physics , Yonsei University , 50 Yonsei-ro , Seodaemun-gu , Seoul 03722 , Korea
| | - June Yeong Lim
- Van der Waals Materials Research Center, Department of Physics and Applied Physics , Yonsei University , 50 Yonsei-ro , Seodaemun-gu , Seoul 03722 , Korea
| | - Yeonjin Yi
- Van der Waals Materials Research Center, Department of Physics and Applied Physics , Yonsei University , 50 Yonsei-ro , Seodaemun-gu , Seoul 03722 , Korea
| | - Seongil Im
- Van der Waals Materials Research Center, Department of Physics and Applied Physics , Yonsei University , 50 Yonsei-ro , Seodaemun-gu , Seoul 03722 , Korea
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16
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Wu D, Li W, Rai A, Wu X, Movva HCP, Yogeesh MN, Chu Z, Banerjee SK, Akinwande D, Lai K. Visualization of Local Conductance in MoS 2/WSe 2 Heterostructure Transistors. NANO LETTERS 2019; 19:1976-1981. [PMID: 30779591 DOI: 10.1021/acs.nanolett.8b05159] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
The vertical stacking of van der Waals (vdW) materials introduces a new degree of freedom to the research of two-dimensional (2D) systems. The interlayer coupling strongly influences the band structure of the heterostructures, resulting in novel properties that can be utilized for electronic and optoelectronic applications. Based on microwave microscopy studies, we report quantitative electrical imaging on gated molybdenum disulfide (MoS2)/tungsten diselenide (WSe2) heterostructure devices, which exhibit an intriguing antiambipolar effect in their transfer characteristics. Interestingly, in the region with significant source-drain current, electrons in the n-type MoS2 and holes in the p-type WSe2 segments are nearly balanced, whereas the heterostructure area is depleted of mobile charges. The spatial evolution of local conductance can be ascribed to the lateral band bending and formation of depletion regions along the line of MoS2-heterostructure-WSe2. Our work vividly demonstrates the microscopic origin of novel transport behaviors, which is important for the vibrant field of vdW heterojunction research.
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Affiliation(s)
- Di Wu
- Department of Physics , The University of Texas at Austin , Austin , Texas 78712 , United States
| | - Wei Li
- Microelectronics Research Center, Department of Electrical and Computer Engineering , The University of Texas at Austin , Austin , Texas 78758 , United States
| | - Amritesh Rai
- Microelectronics Research Center, Department of Electrical and Computer Engineering , The University of Texas at Austin , Austin , Texas 78758 , United States
| | - Xiaoyu Wu
- Department of Physics , The University of Texas at Austin , Austin , Texas 78712 , United States
| | - Hema C P Movva
- Microelectronics Research Center, Department of Electrical and Computer Engineering , The University of Texas at Austin , Austin , Texas 78758 , United States
| | - Maruthi N Yogeesh
- Microelectronics Research Center, Department of Electrical and Computer Engineering , The University of Texas at Austin , Austin , Texas 78758 , United States
| | - Zhaodong Chu
- Department of Physics , The University of Texas at Austin , Austin , Texas 78712 , United States
| | - Sanjay K Banerjee
- Microelectronics Research Center, Department of Electrical and Computer Engineering , The University of Texas at Austin , Austin , Texas 78758 , United States
| | - Deji Akinwande
- Microelectronics Research Center, Department of Electrical and Computer Engineering , The University of Texas at Austin , Austin , Texas 78758 , United States
| | - Keji Lai
- Department of Physics , The University of Texas at Austin , Austin , Texas 78712 , United States
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17
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Neupane GP, Zhou K, Chen S, Yildirim T, Zhang P, Lu Y. In-Plane Isotropic/Anisotropic 2D van der Waals Heterostructures for Future Devices. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2019; 15:e1804733. [PMID: 30714302 DOI: 10.1002/smll.201804733] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/12/2018] [Revised: 12/27/2018] [Indexed: 06/09/2023]
Abstract
Mono- to few-layers of 2D semiconducting materials have uniquely inherent optical, electronic, and magnetic properties that make them ideal for probing fundamental scientific phenomena up to the 2D quantum limit and exploring their emerging technological applications. This Review focuses on the fundamental optoelectronic studies and potential applications of in-plane isotropic/anisotropic 2D semiconducting heterostructures. Strong light-matter interaction, reduced dimensionality, and dielectric screening in mono- to few-layers of 2D semiconducting materials result in strong many-body interactions, leading to the formation of robust quasiparticles such as excitons, trions, and biexcitons. An in-plane isotropic nature leads to the quasi-2D particles, whereas, an anisotropic nature leads to quasi-1D particles. Hence, in-plane isotropic/anisotropic 2D heterostructures lead to the formation of quasi-1D/2D particle systems allowing for the manipulation of high binding energy quasi-1D particle populations for use in a wide variety of applications. This Review emphasizes an exciting 1D-2D particles dynamic in such heterostructures and their potential for high-performance photoemitters and exciton-polariton lasers. Moreover, their scopes are also broadened in thermoelectricity, piezoelectricity, photostriction, energy storage, hydrogen evolution reactions, and chemical sensor fields. The unique in-plane isotropic/anisotropic 2D heterostructures may open the possibility of engineering smart devices in the nanodomain with complex opto-electromechanical functions.
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Affiliation(s)
- Guru Prakash Neupane
- College of Chemistry and Environmental Engineering, Shenzhen University, Shenzhen, 518052, Guangdong, China
- Research School of Engineering, College of Engineering and Computer Science, The Australian National University, Canberra, ACT, 2601, Australia
| | - Kai Zhou
- College of Mechatronics and Control Engineering, Shenzhen University, Nan-hai Ave 3688, Shenzhen, 518060, Guangdong, China
| | - Songsong Chen
- College of Mechatronics and Control Engineering, Shenzhen University, Nan-hai Ave 3688, Shenzhen, 518060, Guangdong, China
| | - Tanju Yildirim
- College of Chemistry and Environmental Engineering, Shenzhen University, Shenzhen, 518052, Guangdong, China
| | - Peixin Zhang
- College of Chemistry and Environmental Engineering, Shenzhen University, Shenzhen, 518052, Guangdong, China
| | - Yuerui Lu
- College of Chemistry and Environmental Engineering, Shenzhen University, Shenzhen, 518052, Guangdong, China
- Research School of Engineering, College of Engineering and Computer Science, The Australian National University, Canberra, ACT, 2601, Australia
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18
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Xue H, Dai Y, Kim W, Wang Y, Bai X, Qi M, Halonen K, Lipsanen H, Sun Z. High photoresponsivity and broadband photodetection with a band-engineered WSe 2/SnSe 2 heterostructure. NANOSCALE 2019; 11:3240-3247. [PMID: 30706932 DOI: 10.1039/c8nr09248f] [Citation(s) in RCA: 12] [Impact Index Per Article: 2.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/07/2023]
Abstract
van der Waals (vdW) heterostructures formed by stacking different two-dimensional layered materials have been demonstrated as a promising platform for next-generation photonic and optoelectronic devices due to their tailorable band-engineering properties. Here, we report a high photoresponsivity and broadband photodetector based on a WSe2/SnSe2 heterostructure. By properly biasing the heterostructure, its band structure changes from near-broken band alignment to type-III band alignment which enables high photoresponsivity from visible to telecommunication wavelengths. The highest photoresponsivity and detectivity at 532 nm are ∼588 A W-1 and 4.4 × 1010 Jones and those at 1550 nm are ∼80 A W-1 and 1.4 × 1010 Jones, which are superior to those of the current state-of-the-art layered transition metal dichalcogenides based photodetectors under similar measurement conditions. Our work not only provides a new method for designing high-performance broadband photodetectors but also enables a deep understanding of the band engineering technology in the vdW heterostructures possible for other applications, such as modulators and lasers.
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Affiliation(s)
- Hui Xue
- Department of Electronics and Nanoengineering, Aalto University, Espoo 02150, Finland.
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19
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Park C, Duong NT, Bang S, Nguyen DA, Oh HM, Jeong MS. Photovoltaic effect in a few-layer ReS 2/WSe 2 heterostructure. NANOSCALE 2018; 10:20306-20312. [PMID: 30375621 DOI: 10.1039/c8nr07219a] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
Two-dimensional transition-metal dichalcogenides (TMDCs) are notable materials owing to their flexibility, transparency, and appropriate bandgaps. Because of their unique advantages, TMDC p-n diodes have been studied for next-generation electronics and optoelectronics. However, their efficiency must be increased for commercialization. In this study, we demonstrated a heterostructure composed of few-layer ReS2 and WSe2. This few-layer ReS2/WSe2 heterostructure exhibits a p-n junction and an n-n junction in different gate-bias regimes. In the p-n junction regime, the heterostructure shows outstanding rectification behavior. Additionally, we identify three carrier-transfer mechanisms - direct tunneling, Fowler-Nordheim tunneling, and the space charge region - depending on the drain bias. Furthermore, the photovoltaic effect is observed in this few-layer ReS2/WSe2 heterostructure. As a result, a high fill factor (≈ 0.56), power conversion (≈ 1.5%), and external quantum efficiency (≈ 15.3%) were obtained. This study provides new guidelines for flexible optoelectronic devices.
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Affiliation(s)
- Chulho Park
- Department of Energy Science, Sungkyunkwan University (SKKU), Suwon 16419, Korea.
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20
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Frisenda R, Molina-Mendoza AJ, Mueller T, Castellanos-Gomez A, van der Zant HSJ. Atomically thin p-n junctions based on two-dimensional materials. Chem Soc Rev 2018; 47:3339-3358. [PMID: 29683464 DOI: 10.1039/c7cs00880e] [Citation(s) in RCA: 94] [Impact Index Per Article: 15.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/15/2022]
Abstract
Recent research in two-dimensional (2D) materials has boosted a renovated interest in the p-n junction, one of the oldest electrical components which can be used in electronics and optoelectronics. 2D materials offer remarkable flexibility to design novel p-n junction device architectures, not possible with conventional bulk semiconductors. In this Review we thoroughly describe the different 2D p-n junction geometries studied so far, focusing on vertical (out-of-plane) and lateral (in-plane) 2D junctions and on mixed-dimensional junctions. We discuss the assembly methods developed to fabricate 2D p-n junctions making a distinction between top-down and bottom-up approaches. We also revise the literature studying the different applications of these atomically thin p-n junctions in electronic and optoelectronic devices. We discuss experiments on 2D p-n junctions used as current rectifiers, photodetectors, solar cells and light emitting devices. The important electronics and optoelectronics parameters of the discussed devices are listed in a table to facilitate their comparison. We conclude the Review with a critical discussion about the future outlook and challenges of this incipient research field.
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Affiliation(s)
- Riccardo Frisenda
- Instituto Madrileño de Estudios Avanzados en Nanociencia (IMDEA-Nanociencia), Campus de Cantoblanco, E-28049 Madrid, Spain.
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Murali K, Dandu M, Das S, Majumdar K. Gate-Tunable WSe 2/SnSe 2 Backward Diode with Ultrahigh-Reverse Rectification Ratio. ACS APPLIED MATERIALS & INTERFACES 2018; 10:5657-5664. [PMID: 29355302 DOI: 10.1021/acsami.7b18242] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/07/2023]
Abstract
Backward diodes conduct more efficiently in the reverse bias than in the forward bias, providing superior high-frequency response, temperature stability, radiation hardness, and 1/f noise performance than a conventional diode conducting in the forward direction. Here, we demonstrate a van der Waals material-based backward diode by exploiting the giant staggered band offsets of WSe2/SnSe2 vertical heterojunction. The diode exhibits an ultrahigh-reverse rectification ratio (R) of ∼2.1 × 104, and the same is maintained up to an unusually large bias of 1.5 V-outperforming existing backward diode reports using conventional bulk semiconductors as well as one- and two-dimensional materials by more than an order of magnitude while maintaining an impressive curvature coefficient (γ) of ∼37 V-1. The transport mechanism in the diode is shown to be efficiently tunable by external gate and drain bias, as well as by the thickness of the WSe2 layer and the type of metal contacts used. These results pave the way for practical electronic circuit applications using two-dimensional materials and their heterojunctions.
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Affiliation(s)
- Krishna Murali
- Department of Electrical Communication Engineering, Indian Institute of Science , Bangalore 560012, India
| | - Medha Dandu
- Department of Electrical Communication Engineering, Indian Institute of Science , Bangalore 560012, India
| | - Sarthak Das
- Department of Electrical Communication Engineering, Indian Institute of Science , Bangalore 560012, India
| | - Kausik Majumdar
- Department of Electrical Communication Engineering, Indian Institute of Science , Bangalore 560012, India
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