Hybrid nanomembrane-based capacitors for the determination of the dielectric constant of semiconducting molecular ensembles

Molecular Electronics: Creating and Bridging Molecular Junctions and Promoting Its Commercialization

Molecular electronics is driven by the dream of expanding Moore's law to the molecular level for next-generation electronics through incorporating individual or ensemble molecules into electronic circuits. For nearly 50 years, numerous efforts have been made to explore the intrinsic properties of molecules and develop diverse fascinating molecular electronic devices with the desired functionalities. The flourishing of molecular electronics is inseparable from the development of various elegant methodologies for creating nanogap electrodes and bridging the nanogap with molecules. This review first focuses on the techniques for making lateral and vertical nanogap electrodes by breaking, narrowing, and fixed modes, and highlights their capabilities, applications, merits, and shortcomings. After summarizing the approaches of growing single molecules or molecular layers on the electrodes, the methods of constructing a complete molecular circuit are comprehensively grouped into three categories: 1) directly bridging one-molecule-electrode component with another electrode, 2) physically bridging two-molecule-electrode components, and 3) chemically bridging two-molecule-electrode components. Finally, the current state of molecular circuit integration and commercialization is discussed and perspectives are provided, hoping to encourage the community to accelerate the realization of fully scalable molecular electronics for a new era of integrated microsystems and applications.

Temperature-Independent Polarization of Ultrathin Phthalocyanine-Based Hybrid Organic/Inorganic Heterojunctions

The combination of organic and inorganic materials at the nanoscale to form functional hybrid structures is a powerful strategy to develop novel electronic devices. The knowledge on semiconductor thin-film polarization brings direct benefits to the hybrid organic/inorganic electronics, becoming primordial for the development of devices such as electromechanical logic gates, solar cells, miniaturized valves, organic diodes, and molecular supercapacitors, among others. Here, we report on the dielectric polarization of ultrathin organic semiconducting films-ca. 5 nm thick metal phthalocyanine ensembles (viz., CuPc, CoPc, F16CuPc)-employed to build up hybrid metal/oxide/molecule heterojunctions. Such hybrid heterostructures are fully integrated into self-rolled nanomembrane-based capacitors and further investigated by impedance spectroscopy measurements as a function of temperature (from 6 to 300 K). The dielectric polarization of the metal phthalocyanines is found to be thermally activated above a specific threshold temperature, which depends on the molecular structure. Below this threshold, the current leakage across the system is suppressed, thus evidencing intrinsic-like polarization mechanisms. The temperature-independent permittivities of the ultrathin molecular films are found to be strongly dependent on the organic/inorganic hybrid interfaces, while the calculated relaxation times are more likely related to each single-molecule polarization. Beyond the advances in determining the temperature dependence of the permittivity for ultrathin phthalocyanine films integrated within solid-state electronics, our results also support the deterministic design of novel functional devices based on nanoscale hybrid organic/inorganic heterojunctions.

Rectification ratio and direction controlled by temperature in copper phthalocyanine ensemble molecular diodes

Organic diodes and molecular rectifiers are fundamental electronic devices that share one common feature: current rectification ability. Since both present distinct spatial dimensions and working principles, the rectification of organic diodes is usually achieved by interface engineering, while changes in molecular structures commonly control the molecular rectifiers' features. Here, we report on the first observation of temperature-driven inversion of the rectification direction (IRD) in ensemble molecular diodes (EMDs) prepared in a vertical stack configuration. The EMDs are composed of 20 nm thick molecular ensembles of copper phthalocyanine in close contact with one of its fluorinated derivatives. The material interface was found to be responsible for modifying the junction's conduction mechanisms from nearly activationless transport to Poole-Frenkel emission and phonon-assisted tunneling. In this context, the current rectification was found to be dependent on the interplay of such distinct charge transport mechanisms. The temperature has played a crucial role in each charge transport transition, which we have investigated via electrical measurements and band diagram analysis, thus providing the fundamentals on the IRD occurrence. Our findings represent an important step towards simple and rational control of rectification in carbon-based electronic nanodevices.

3D Self-Assembled Microelectronic Devices: Concepts, Materials, Applications

Modern microelectronic systems and their components are essentially 3D devices that have become smaller and lighter in order to improve performance and reduce costs. To maintain this trend, novel materials and technologies are required that provide more structural freedom in 3D over conventional microelectronics, as well as easier parallel fabrication routes while maintaining compatability with existing manufacturing methods. Self-assembly of initially planar membranes into complex 3D architectures offers a wealth of opportunities to accommodate thin-film microelectronic functionalities in devices and systems possessing improved performance and higher integration density. Existing work in this field, with a focus on components constructed from 3D self-assembly, is reviewed, and an outlook on their application potential in tomorrow's microelectronics world is provided.

Edge-driven nanomembrane-based vertical organic transistors showing a multi-sensing capability

The effective utilization of vertical organic transistors in high current density applications demands further reduction of channel length (given by the thickness of the organic semiconducting layer and typically reported in the 100 nm range) along with the optimization of the source electrode structure. Here we present a viable solution by applying rolled-up metallic nanomembranes as the drain-electrode (which enables the incorporation of few nanometer-thick semiconductor layers) and by lithographically patterning the source-electrode. Our vertical organic transistors operate at ultra-low voltages and demonstrate high current densities (~0.5 A cm⁻²) that are found to depend directly on the number of source edges, provided the source perforation gap is wider than 250 nm. We anticipate that further optimization of device structure can yield higher current densities (~10 A cm⁻²). The use of rolled-up drain-electrode also enables sensing of humidity and light which highlights the potential of these devices to advance next-generation sensing technologies.

For vertical organic field-effect transistors (VOFETs) to reach their potential for display and sensor applications, further improvements to fabrication methods are required. Here, the authors report microfabricated VOFETs featuring rolled-up metallic nanomembrane electrodes and displaying multi-sensing capability.

Nanoscale Variable-Area Electronic Devices: Contact Mechanics and Hypersensitive Pressure Application

Nanomembranes (NMs) are freestanding structures with few-nanometer thickness and lateral dimensions up to the microscale. In nanoelectronics, NMs have been used to promote reliable electrical contacts with distinct nanomaterials, such as molecules, quantum dots, and nanowires, as well as to support the comprehension of the condensed matter down to the nanoscale. Here, we propose a tunable device architecture that is capable of deterministically changing both the contact geometry and the current injection in nanoscale electronic junctions. The device is based on a hybrid arrangement that joins metallic NMs and molecular ensembles, resulting in a versatile, mechanically compliant element. Such a feature allows the devices to accommodate a mechanical stimulus applied over the top electrodes, enlarging the junctions' active area without compromising the molecules. A model derived from the Hertzian mechanics is employed to correlate the contact dynamics with the electronic transport in these novel devices denominated as variable-area transport junctions (VATJs). As a proof of concept, we propose a direct application of the VATJs as compression gauges envisioning the development of hypersensitive pressure pixels. Regarding sensitivity (∼480 kPa^-1), the VATJ-based transducers constitute a breakthrough in nanoelectronics, with the prospect of carrying its sister-field of molecular electronics out of the laboratory via integrative, hybrid organic/inorganic nanotechnology.

Low-Voltage, Flexible, and Self-Encapsulated Ultracompact Organic Thin-Film Transistors Based on Nanomembranes

Organic thin-film transistors (OTFTs) are an ever-growing subject of research, powering recent technologies such as flexible and wearable electronics. Currently, many studies are being carried out to push forward the state-of-the-art OTFT technology to achieve characteristics that include high carrier mobility, low power consumption, flexibility, and the ability to operate under harsh conditions. Here, we tackle this task by proposing a novel OTFT architecture exploring the so-called rolled-up nanomembrane technology to fabricate low-voltage (<2 V), ultracompact OTFTs. As the OTFT gate electrode, we use strained nanomembranes, which allows all transistor components to be rolled-up and confined into a tubular-shaped tridimensional device structure with reduced footprint (ca. 90% of their planar counterpart), without any loss of electrical performance. Such an innovative architecture endows the OTFTs high mechanical flexibility (bending radius of <30 μm) and robustness-the devices can be reversibly deformed, withstanding more than 500 radial compression/decompression cycles. Additionally, the tubular device design possesses an inherent self-encapsulation characteristic that protects the OTFT active region from degradation by UV-light and hazardous vapors. The reported strategy is also shown to be compatible with different organic semiconductor materials. All of these characteristics contribute to further extending the potentialities of OTFTs, mainly toward rugged electronics.