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Rhee H, Kim G, Song H, Park W, Kim DH, In JH, Lee Y, Kim KM. Probabilistic computing with NbO x metal-insulator transition-based self-oscillatory pbit. Nat Commun 2023; 14:7199. [PMID: 37938550 PMCID: PMC10632392 DOI: 10.1038/s41467-023-43085-6] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/06/2023] [Accepted: 10/30/2023] [Indexed: 11/09/2023] Open
Abstract
Energy-based computing is a promising approach for addressing the rising demand for solving NP-hard problems across diverse domains, including logistics, artificial intelligence, cryptography, and optimization. Probabilistic computing utilizing pbits, which can be manufactured using the semiconductor process and seamlessly integrated with conventional processing units, stands out as an efficient candidate to meet these demands. Here, we propose a novel pbit unit using an NbOx volatile memristor-based oscillator capable of generating probabilistic bits in a self-clocking manner. The noise-induced metal-insulator transition causes the probabilistic behavior, which can be effectively modeled using a multi-noise-induced stochastic process around the metal-insulator transition temperature. We demonstrate a memristive Boltzmann machine based on our proposed pbit and validate its feasibility by solving NP-hard problems. Furthermore, we propose a streamlined operation methodology that considers the autocorrelation of individual bits, enabling energy-efficient and high-performance probabilistic computing.
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Affiliation(s)
- Hakseung Rhee
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, 34141, Republic of Korea
| | - Gwangmin Kim
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, 34141, Republic of Korea
| | - Hanchan Song
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, 34141, Republic of Korea
| | - Woojoon Park
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, 34141, Republic of Korea
| | - Do Hoon Kim
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, 34141, Republic of Korea
| | - Jae Hyun In
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, 34141, Republic of Korea
| | - Younghyun Lee
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, 34141, Republic of Korea
| | - Kyung Min Kim
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, 34141, Republic of Korea.
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2
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Leonetti G, Fretto M, Pirri FC, De Leo N, Valov I, Milano G. Effect of electrode materials on resistive switching behaviour of NbO x-based memristive devices. Sci Rep 2023; 13:17003. [PMID: 37813937 PMCID: PMC10562416 DOI: 10.1038/s41598-023-44110-w] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/19/2023] [Accepted: 10/03/2023] [Indexed: 10/11/2023] Open
Abstract
Memristive devices that rely on redox-based resistive switching mechanism have attracted great attention for the development of next-generation memory and computing architectures. However, a detailed understanding of the relationship between involved materials, interfaces, and device functionalities still represents a challenge. In this work, we analyse the effect of electrode metals on resistive switching functionalities of NbOx-based memristive cells. For this purpose, the effect of Au, Pt, Ir, TiN, and Nb top electrodes was investigated in devices based on amorphous NbOx grown by anodic oxidation on a Nb substrate exploited also as counter electrode. It is shown that the choice of the metal electrode regulates electronic transport properties of metal-insulator interfaces, strongly influences the electroforming process, and the following resistive switching characteristics. Results show that the electronic blocking character of Schottky interfaces provided by Au and Pt metal electrodes results in better resistive switching performances. It is shown that Pt represents the best choice for the realization of memristive cells when the NbOx thickness is reduced, making possible the realization of memristive cells characterised by low variability in operating voltages, resistance states and with low device-to-device variability. These results can provide new insights towards a rational design of redox-based memristive cells.
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Affiliation(s)
- Giuseppe Leonetti
- Department of Applied Science and Technology (DISAT), Politecnico di Torino, C.So Duca Degli Abruzzi 24, 10129, Turin, Italy
| | - Matteo Fretto
- Advanced Materials Metrology and Life Sciences Division, Istituto Nazionale Di Ricerca Metrologica (INRiM), Strada Delle Cacce 91, 10135, Turin, Italy
| | - Fabrizio Candido Pirri
- Department of Applied Science and Technology (DISAT), Politecnico di Torino, C.So Duca Degli Abruzzi 24, 10129, Turin, Italy
| | - Natascia De Leo
- Advanced Materials Metrology and Life Sciences Division, Istituto Nazionale Di Ricerca Metrologica (INRiM), Strada Delle Cacce 91, 10135, Turin, Italy
| | - Ilia Valov
- Institute of Electrochemistry and Energy System, Forschungszentrum Jülich, WilhelmJohnen-Straße, 52428, Jülich, Germany.
- "Acad. Evgeni Budevski" IEE-BAS, Bulgarian Academy of Sciences (BAS), Acad. G. Bonchev Str, Block 10, 1113, Sofia, Bulgaria.
| | - Gianluca Milano
- Advanced Materials Metrology and Life Sciences Division, Istituto Nazionale Di Ricerca Metrologica (INRiM), Strada Delle Cacce 91, 10135, Turin, Italy.
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3
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Park W, Kim G, In JH, Rhee H, Song H, Park J, Martinez A, Kim KM. High Amplitude Spike Generator in Au Nanodot-Incorporated NbO x Mott Memristor. NANO LETTERS 2023; 23:5399-5407. [PMID: 36930534 DOI: 10.1021/acs.nanolett.2c04599] [Citation(s) in RCA: 4] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
NbOx-based Mott memristors exhibit fast threshold switching behaviors, making them suitable for spike generators in neuromorphic computing and stochastic clock generators in security devices. In these applications, a high output spike amplitude is necessary for threshold level control and accurate signal detection. Here, we propose a materialwise solution to obtain the high amplitude spikes by inserting Au nanodots into the NbOx device. The Au nanodots enable increasing the threshold voltage by modulating the oxygen contents at the electrode-oxide interface, providing a higher ON current compared to nanodot-free NbOx devices. Also, the reduction of the local switching region volume decreases the thermal capacitance of the system, allowing the maximum spike amplitude generation. Consequently, the Au nanodot incorporation increases the spike amplitude of the NbOx device by 6 times, without any additional external circuit elements. The results are systematically supported by both a numerical model and a finite-element-method-based multiphysics model.
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Affiliation(s)
- Woojoon Park
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Republic of Korea
| | - Gwangmin Kim
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Republic of Korea
| | - Jae Hyun In
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Republic of Korea
| | - Hakseung Rhee
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Republic of Korea
| | - Hanchan Song
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Republic of Korea
| | - Juseong Park
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Republic of Korea
| | - Alba Martinez
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Republic of Korea
| | - Kyung Min Kim
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Republic of Korea
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4
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Nath SK, Nandi SK, Das SK, Liang Y, Elliman RG. Thermal transport in metal-NbO x-metal cross-point devices and its effect on threshold switching characteristics. NANOSCALE 2023; 15:7559-7565. [PMID: 37038892 DOI: 10.1039/d3nr00173c] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/19/2023]
Abstract
Volatile threshold switching and current-controlled negative differential resistance (NDR) in metal-oxide-metal (MOM) devices result from thermally driven conductivity changes induced by local Joule heating and are therefore influenced by the thermal properties of the device-structure. In this study, we investigate the effect of the metal electrodes on the threshold switching response of NbOx-based cross-point devices. The electroforming and switching characteristics are shown to be strongly influenced by the thickness and thermal conductivity of the top-electrode due to its effect on heat loss from the NbOx film. Specifically, we demonstrate a 40% reduction in threshold voltage and a 75% reduction in threshold power as the thickness of the top Au electrode is reduced from 125 nm to 25 nm, and a 24% reduction in threshold voltage and 64% reduction in threshold power when the Au electrode is replaced by a Pt electrode of the same thickness of NbOx film, due to its lower thermal conductivity. Lumped element and finite element modelling of the devices show that these improvements are due to a reduction in heat loss to the electrodes, which is dominated by lateral heat flow within the electrode. These results clearly demonstrate the importance of the electrodes in determining the electroforming and threshold switching characteristics of MOM cross point devices.
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Affiliation(s)
- Shimul Kanti Nath
- Department of Electronic Materials Engineering, Research School of Physics, The Australian National, University, Canberra, ACT 2601, Australia.
- Department of Electrical, Electronic and Computer Engineering, The University of Western Australia, 35 Stirling Highway, Perth 6009, Australia
| | - Sanjoy Kumar Nandi
- Department of Electronic Materials Engineering, Research School of Physics, The Australian National, University, Canberra, ACT 2601, Australia.
| | - Sujan Kumar Das
- Department of Electronic Materials Engineering, Research School of Physics, The Australian National, University, Canberra, ACT 2601, Australia.
| | - Yan Liang
- School of Electronic and Information, Hangzhou Dianzi University, Hangzhou, 310018, China
| | - Robert G Elliman
- Department of Electronic Materials Engineering, Research School of Physics, The Australian National, University, Canberra, ACT 2601, Australia.
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5
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Zrinski I, Zavašnik J, Duchoslav J, Hassel AW, Mardare AI. Threshold Switching in Forming-Free Anodic Memristors Grown on Hf-Nb Combinatorial Thin-Film Alloys. NANOMATERIALS (BASEL, SWITZERLAND) 2022; 12:3944. [PMID: 36432230 PMCID: PMC9697845 DOI: 10.3390/nano12223944] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 10/22/2022] [Revised: 11/03/2022] [Accepted: 11/05/2022] [Indexed: 06/16/2023]
Abstract
The development of novel materials with coexisting volatile threshold and non-volatile memristive switching is crucial for neuromorphic applications. Hence, the aim of this work was to investigate the memristive properties of oxides in a Hf-Nb thin-film combinatorial system deposited by sputtering on Si substrates. The active layer was grown anodically on each Hf-Nb alloy from the library, whereas Pt electrodes were deposited as the top electrodes. The devices grown on Hf-45 at.% Nb alloys showed improved memristive performances reaching resistive state ratios up to a few orders of magnitude and achieving multi-level switching behavior while consuming low power in comparison with memristors grown on pure metals. The coexistence of threshold and resistive switching is dependent upon the current compliance regime applied during memristive studies. Such behaviors were explained by the structure of the mixed oxides investigated by TEM and XPS. The mixed oxides, with HfO2 crystallites embedded in quasi amorphous and stoichiometrically non-uniform Nb oxide regions, were found to be favorable for the formation of conductive filaments as a necessary step toward memristive behavior. Finally, metal-insulator-metal structures grown on the respective alloys can be considered as relevant candidates for the future fabrication of anodic high-density in-memory computing systems for neuromorphic applications.
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Affiliation(s)
- Ivana Zrinski
- Institute of Chemical Technology of Inorganic Materials, Johannes Kepler University Linz, Altenberger Street, 69, 4040 Linz, Austria
| | - Janez Zavašnik
- Jožef Stefan Institute, Jamova Cesta 39, 1000 Ljubljana, Slovenia
| | - Jiri Duchoslav
- Center for Surface and Nanoanalytics, Johannes Kepler University Linz, Altenberger Street, 69, 4040 Linz, Austria
| | - Achim Walter Hassel
- Institute of Chemical Technology of Inorganic Materials, Johannes Kepler University Linz, Altenberger Street, 69, 4040 Linz, Austria
- Danube Private University, Steiner Landstrasse 124, 3500 Krems-Stein, Austria
| | - Andrei Ionut Mardare
- Institute of Chemical Technology of Inorganic Materials, Johannes Kepler University Linz, Altenberger Street, 69, 4040 Linz, Austria
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Kim G, In JH, Kim YS, Rhee H, Park W, Song H, Park J, Kim KM. Self-clocking fast and variation tolerant true random number generator based on a stochastic mott memristor. Nat Commun 2021; 12:2906. [PMID: 34006879 PMCID: PMC8131590 DOI: 10.1038/s41467-021-23184-y] [Citation(s) in RCA: 12] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/29/2020] [Accepted: 04/14/2021] [Indexed: 11/09/2022] Open
Abstract
The intrinsic stochasticity of the memristor can be used to generate true random numbers, essential for non-decryptable hardware-based security devices. Here, we propose a novel and advanced method to generate true random numbers utilizing the stochastic oscillation behavior of a NbOx mott memristor, exhibiting self-clocking, fast and variation tolerant characteristics. The random number generation rate of the device can be at least 40 kb s−1, which is the fastest record compared with previous volatile memristor-based TRNG devices. Also, its dimensionless operating principle provides high tolerance against both ambient temperature variation and device-to-device variation, enabling robust security hardware applicable in harsh environments. Obtaining true random numbers is of great importance for cryptography, however, it can be challenging to obtain a large bit rate. Here, the authors make use of the oscillating behaviour of a Mott memristor, which exhibit rapid oscillations, and therefore a large bit rate, alongside impressive endurance.
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Affiliation(s)
- Gwangmin Kim
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, Republic of Korea
| | - Jae Hyun In
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, Republic of Korea
| | - Young Seok Kim
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, Republic of Korea
| | - Hakseung Rhee
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, Republic of Korea
| | - Woojoon Park
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, Republic of Korea
| | - Hanchan Song
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, Republic of Korea
| | - Juseong Park
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, Republic of Korea
| | - Kyung Min Kim
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, Republic of Korea.
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7
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Nath SK, Nandi SK, Ratcliff T, Elliman RG. Engineering the Threshold Switching Response of Nb 2O 5-Based Memristors by Ti Doping. ACS APPLIED MATERIALS & INTERFACES 2021; 13:2845-2852. [PMID: 33406833 DOI: 10.1021/acsami.0c19544] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Two terminal metal-oxide-metal devices based on niobium oxide thin films exhibit a wide range of non-linear electrical characteristics that have applications in hardware-based neuromorphic computing. In this study, we compare the threshold-switching and current-controlled negative differential resistance (NDR) characteristics of cross-point devices fabricated from undoped Nb2O5 and Ti-doped Nb2O5 and show that doping offers an effective means of engineering the device response for particular applications. In particular, doping is shown to improve the device reliability and to provide a means of tuning the threshold and hold voltages, the hysteresis window, and the magnitude of the negative differential resistance. Based on temperature-dependent current-voltage characteristics and lumped-element modelling, these effects are attributed to doping-induced reductions in the device resistance and its rate of change with temperature (i.e., the effective thermal activation energy for conduction). Significantly, these studies also show that a critical activation energy is required for devices to exhibit NDR, with doping providing an effective means of engineering the current-voltage characteristics. These results afford an improved understanding of the physical mechanisms responsible for threshold switching and provide new insights for designing devices for specific applications.
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Affiliation(s)
- Shimul Kanti Nath
- Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
| | - Sanjoy Kumar Nandi
- Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
| | - Thomas Ratcliff
- Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
| | - Robert Glen Elliman
- Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
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8
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Kozen AC, Robinson ZR, Glaser ER, Twigg M, Larrabee TJ, Cho H, Prokes SM, Ruppalt LB. In Situ Hydrogen Plasma Exposure for Varying the Stoichiometry of Atomic Layer Deposited Niobium Oxide Films for Use in Neuromorphic Computing Applications. ACS APPLIED MATERIALS & INTERFACES 2020; 12:16639-16647. [PMID: 32223206 DOI: 10.1021/acsami.0c01279] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Niobium oxide (NbOx) materials of various compositions are of interest for neuromorphic systems that rely on memristive device behavior. In this study, we vary the composition of NbOx thin films deposited via atomic layer deposition (ALD) by incorporating one or more in situ hydrogen plasma exposure steps during the ALD supercycle. Films with compositions ranging from Nb2O5 to NbO2 were deposited, with film composition dependent on the duration of the plasma exposure step, the number of plasma exposure steps per ALD supercycle, and the hydrogen content of the plasma. The chemical and optical properties of the ALD NbOx films were probed using spectral ellipsometry, X-ray photoelectron spectroscopy, and optical transmission spectroscopy. Two-terminal electrical devices fabricated from ALD Nb2O5 and NbO2 thin films exhibited memristive switching behavior, with switching in the NbO2 devices achieved without a high-field electroforming step. The ability to controllably tune the composition of ALD-grown NbOx films opens new opportunities for realizing a variety of device structures relevant for neuromorphic computing and other emerging electronic and optoelectronic applications.
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Affiliation(s)
- Alexander C Kozen
- American Society for Engineering Education, U.S. Naval Research Laboratory, Washington, D.C. 20375, United States
| | - Zachary R Robinson
- Department of Physics, SUNY Brockport, Brockport, New York 14420, United States
| | - Evan R Glaser
- Electronics Science and Technology Division, U.S. Naval Research Laboratory, Washington, D.C. 20375, United States
| | - Mark Twigg
- Electronics Science and Technology Division, U.S. Naval Research Laboratory, Washington, D.C. 20375, United States
| | - Thomas J Larrabee
- Jacobs Engineering, U.S. Naval Research Laboratory, Washington, D.C. 20375, United States
| | - Hans Cho
- Electronics Science and Technology Division, U.S. Naval Research Laboratory, Washington, D.C. 20375, United States
| | - S M Prokes
- Electronics Science and Technology Division, U.S. Naval Research Laboratory, Washington, D.C. 20375, United States
| | - Laura B Ruppalt
- Electronics Science and Technology Division, U.S. Naval Research Laboratory, Washington, D.C. 20375, United States
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Nandi SK, Nath SK, El-Helou AE, Li S, Ratcliff T, Uenuma M, Raad PE, Elliman RG. Electric Field- and Current-Induced Electroforming Modes in NbO x. ACS APPLIED MATERIALS & INTERFACES 2020; 12:8422-8428. [PMID: 31989818 DOI: 10.1021/acsami.9b20252] [Citation(s) in RCA: 9] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Electroforming is used to initiate the memristive response in metal/oxide/metal devices by creating a filamentary conduction path in the oxide film. Here, we use a simple photoresist-based detection technique to map the spatial distribution of conductive filaments formed in Nb/NbOx/Pt devices, and correlate these with current-voltage characteristics and in situ thermoreflectance measurements to identify distinct modes of electroforming in low- and high-conductivity NbOx films. In low-conductivity films, the filaments are randomly distributed within the oxide film, consistent with a field-induced weakest-link mechanism, while in high-conductivity films they are concentrated in the center of the film. In the latter case, the current-voltage characteristics and in situ thermoreflectance imaging show that electroforming is associated with current bifurcation into regions of low and high current density. This is supported by finite element modeling of the current distribution and shown to be consistent with predictions of a simple core-shell model of the current distribution. These results clearly demonstrate two distinct modes of electroforming in the same material system and show that the dominant mode depends on the conductivity of the film, with field-induced electroforming dominant in low-conductivity films and current bifurcation-induced electroforming dominant in high-conductivity films.
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Affiliation(s)
- Sanjoy Kumar Nandi
- Department of Electronic Materials Engineering, Research School of Physics , The Australian National University , Canberra , ACT 2601 , Australia
| | - Shimul Kanti Nath
- Department of Electronic Materials Engineering, Research School of Physics , The Australian National University , Canberra , ACT 2601 , Australia
| | - Assaad E El-Helou
- Department of Mechanical Engineering , Southern Methodist University , Dallas , Texas 75275 , United States
| | - Shuai Li
- Department of Electronic Materials Engineering, Research School of Physics , The Australian National University , Canberra , ACT 2601 , Australia
- Université Paris-Sud, Université Paris-Saclay , Unité Mixte de Physique, CNRS, Thales , 91120 Palaiseau , France
| | - Thomas Ratcliff
- Department of Electronic Materials Engineering, Research School of Physics , The Australian National University , Canberra , ACT 2601 , Australia
| | - Mutsunori Uenuma
- Information Device Science Laboratory , Nara Institute of Science and Technology (NAIST) , 8916-5, Takayamacho, Ikoma , Nara 630-0192 , Japan
| | - Peter E Raad
- Department of Mechanical Engineering , Southern Methodist University , Dallas , Texas 75275 , United States
| | - Robert G Elliman
- Department of Electronic Materials Engineering, Research School of Physics , The Australian National University , Canberra , ACT 2601 , Australia
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Andrews JL, Santos DA, Meyyappan M, Williams RS, Banerjee S. Building Brain-Inspired Logic Circuits from Dynamically Switchable Transition-Metal Oxides. TRENDS IN CHEMISTRY 2019. [DOI: 10.1016/j.trechm.2019.07.005] [Citation(s) in RCA: 17] [Impact Index Per Article: 3.4] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/26/2022]
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