Advanced radial junction thin film photovoltaics and detectors built on standing silicon nanowires

Advances in silicon nanowire applications in energy generation, storage, sensing, and electronics: a review

Nanowire-based technological advancements thrive in various fields, including energy generation and storage, sensors, and electronics. Among the identified nanowires, silicon nanowires (SiNWs) attract much attention as they possess unique features, including high surface-to-volume ratio, high electron mobility, bio-compatibility, anti-reflection, and elasticity. They were tested in domains of energy generation (thermoelectric, photo-voltaic, photoelectrochemical), storage (lithium-ion battery (LIB) anodes, super capacitors), and sensing (bio-molecules, gas, light, etc). These nano-structures were found to improve the performance of the system in terms of efficiency, stability, sensitivity, selectivity, cost, rapidity, and reliability. This review article scans and summarizes the significant developments that occurred in the last decade concerning the application of SiNWs in the fields of thermoelectric, photovoltaic, and photoelectrochemical power generation, storage of energy using LIB anodes, biosensing, and disease diagnostics, gas and pH sensing, photodetection, physical sensing, and electronics. The functionalization of SiNWs with various nanomaterials and the formation of heterostructures for achieving improved characteristics are discussed. This article will be helpful to researchers in the field of nanotechnology about various possible applications and improvements that can be realized using SiNW.

Synthesis and solar blind photosensitivity of crystalline boron nanowires

Herein, single crystalline boron nanowires (BNWs) have been synthesized by chemical vapor transport using boron element as boron source, iodine as transport agent, and Au as catalyst. The results demonstrate that BNWs can be all formed at 600 °C-950 °C for 2 h, and possess rhombohedral crystal structure (β-boron). The NWs have diameters from several to hundreds of nanometers, and lengths from several to hundreds of microns. A single nanowire has been fabricated to field effect transistor (FET) which shows excellent solar blind photosensitivity and selectivity. The photo/dark current ratio and photoresponsitity is 1.14 and 97.6 mA W^-1at a bias of 5 V under light illumination of 254 nm with 0.42 mW cm^-2, respectively, and both the rising and decay time of the on-off currents are 4.6 s and 10.3 s, respectively. When the FET is used as a personal breath sensor, the ratio of exsufflating and inhaling currents is 2.7, rising and decay time of the breath currents are 0.4 s and 2.2 s, respectively. So the BNWs are important sense materials.

Review on 3D growth engineering and integration of nanowires for advanced nanoelectronics and sensor applications

Recent years have witnessed increasing efforts devoted to the growth, assembly and integration of quasi-one dimensional (1D) nanowires (NWs), as fundamental building blocks in advanced three-dimensional (3D) architecture, to explore a series of novel nanoelectronic and sensor applications. An important motivation behind is to boost the integration density of the electronic devices by stacking more functional units in theout-of-plane z-direction, where the NWs are supposed to be patterned or grown as vertically standing or laterally stacked channels to minimize their footprint area. The other driving force is derived from the unique possibility of engineering the 1D NWs into more complex, as well as more functional, 3D nanostructures, such as helical springs and kinked probes, which are ideal nanostructures for developping advanced nanoelectromechanical system (NEMS), bio-sensing and manipulation applications. This Review will first examine the recent progresses made in the construction of 3D nano electronic devices, as well as the new fabrication and growth technologies established to enable an efficient 3D integration of the vertically standing or laterally stacked NW channels. Then, the different approaches to produce and tailor more sophisticated 3D helical springs or purposely-designed nanoprobes will be revisited, together with their applications in NEMS resonators, bio sensors and stimulators in neural system.

Nanoscale growth of a Sn-guided SiGeSn alloy on Si (111) substrates by molecular beam epitaxy

Here, SiGeSn nanostructures were grown via molecular beam epitaxy on a Si (111) substrate with the assistance of Sn droplets. Owing to the thermal effect and the compressive strain induced by a lattice mismatch, Si and Sn atoms were successfully incorporated into the Ge matrix during the Sn-guided Ge deposition process. A low growth temperature of 350 °C produced a variety of SiGeSn nanostructures of different sizes, attributed to the variation of the initial Sn droplet size. Using energy-dispersive X-ray spectroscopy, the Sn, Si and Ge contents of a defect-free SiGeSn nanoisland were approximately determined to be 0.05, 0.09 and 0.86, respectively. Furthermore, as the growth temperature increased past 600 °C, the growth direction of the nanostructure was changed thermally from out-of-plane to in-plane. Meanwhile, the stacked SiGeSn nanowires grown along the 〈112〉 direction remained defect-free, though some threading dislocations were observed in the smooth SiGeSn nanowires along the 〈110〉 direction. These results offer a novel method to grow Si-based SiGeSn nanostructures while possessing important implications for fabricating further optoelectronic devices.

Coupled boron-doping and geometry control of tin-catalyzed silicon nanowires for high performance radial junction photovoltaics

Geometry and doping control in silicon nanowires (SiNWs) are both crucial aspects in fabricating three-dimensional (3D) radial junction thin film solar cells, while the coupling between them remains a peculiar aspect to be better understood. In this work, we focus on the geometry evolution and the doping effects realized in tin-catalyzed SiNWs grown via a plasma-enhanced vapor-liquid-solid procedure by using different diborane (B₂H₆) dopant flows. It is shown that with the increase of B₂H₆ flow rate from 0.3 to 2.1 SCCM, the radial growth of SiNWs is greatly accelerated by more than 30%, while the length is shortened to 50%. This can be related to the enhanced chemisorption probability of SiH_x radicals, with the addition of B₂H₆, on the SiNW sidewall during silane (SiH₄) plasma deposition in PECVD system, which leads to easier nucleation directly on the sidewalls and faster radial expansion of the SiNWs. A trade-off has to be sought between seeking a strong light trapping and ensuring a sufficient doping for high-quality PIN junction with the increase of B₂H₆ doping flow. These new understandings lay a critical basis for understanding and searching for an optimal growth control for constructing high-performance 3D radial junction thin-film solar cells.