Selective photoresponse of plasmonic silver nanoparticle decorated Bi2Se3 nanosheets

Photoresponse of Carbon Nanofiber-Based Photodetector and Its Enhancement on CuNi Nanoparticle Adsorption

We explore the photodetection properties of a carbon nanofiber (CNF)-based p-CNF/n-Si heterojunction device in the 400-800 nm wavelength range and investigate the changes brought in by adsorption of CuNi (CN) nanoparticles on the CNFs. The nanoparticles and CN-CNF nanocomposites were synthesized by using chemical hydrothermal routes. The p-type semiconducting nature of the CNFs and nanocomposites was determined using X-ray photoelectron (XPS) and UV-vis spectroscopies. The p-CNF/n-Si device is found to be better than many carbon-nanotube-based devices in terms of its peak responsivity (0.6 A/W) and gain (1.6), with an acceptably moderate peak detectivity (1.3 × 109 Jones) at 450 nm and a -5 V bias. The p-CN-CNF/n-Si device displays an appreciable enhancement in the photoresponse with respect to the p-CNF/n-Si device, with a peak responsivity of 2.8 A/W, peak detectivity of 9.4 × 109 Jones, and gain of 8. With the aid of valence band XPS and Raman spectra, the enhancement is explainable in terms of a CN to CNF charge transfer and the resulting increase in the built-in potential at the heterojunction.

Local magnetic behaviour of highly disordered undoped and Co-doped Bi2Se3 nanoplates: a muon spin relaxation study

Magnetism induced by defects in nominally non-magnetic solids has attracted intense scientific interest in recent years. The local magnetism in highly disordered undoped and Co-doped topological insulator (TI) Bi₂Se₃nanoplates has been investigated by muon spin relaxation (μSR). UsingμSR spectroscopy, together with other macroscopic characterizations, we find that these nanoplates are composed of a core with both static fields and dynamically fluctuating moments, and a shell with purely dynamically fluctuating moments. The fluctuations in the core die out at low temperatures, while those in the shell continue till 2 K. When Bi₂Se₃is doped with Co, the static magnetic component increases, whilst keeping the dual (static-plus-dynamic) nature intact. The findings indicate that highly disordered TI's could constitute a new class of promising magnetic materials that can be engineered by magnetic impurity doping.

Enhanced Photocurrent of the Ag Interfaced Topological Insulator Bi2Se3 under UV- and Visible-Light Radiations

Bi₂Se₃ is a topological quantum material that is used in photodetectors, owing to its narrow bandgap, conductive surface, and insulating bulk. In this work, Ag@Bi₂Se₃ nanoplatelets were synthesized on Al₂O₃(100) substrates in a two-step process of thermal evaporation and magnetron sputtering. X-ray diffractometer (XRD), high-resolution transmission electron microscopy (HRTEM), Raman spectroscopy, and x-ray photoelectron spectroscopy (XPS) revealed that all samples had the typical rhombohedral Bi₂Se₃. Field-emission scanning electron microscopy (FESEM)-energy dispersive x-ray spectroscopy (EDS), XPS, and HRTEM confirmed the presence of the precipitated Ag. The optical absorptance of Bi₂Se₃ nanoplatelets in UV-visible range decreased with the Ag contents. Results of photocurrent measurements under zero-bias conditions revealed that the deposited Ag affected photosensitivity. A total of 7.1 at.% Ag was associated with approximately 4.25 and 4.57 times higher photocurrents under UV and visible light, respectively, than 0 at.% Ag. The photocurrent in Bi₂Se₃ at 7.1 at.% Ag under visible light was 1.72-folds of that under UV light. This enhanced photocurrent is attributable to the narrow bandgap (~0.35 eV) of Bi₂Se₃ nanoplatelets, the Schottky field at the interface between Ag and Bi₂Se₃, the surface plasmon resonance that is caused by Ag, and the highly conductive surface that is formed from Ag and Bi₂Se₃. This work suggests that the appropriate Ag deposition enhances the photocurrent in, and increases the photosensitivity of, Bi₂Se₃ nanoplatelets under UV and visible light.

Broadband Detection Based on 2D Bi2Se3/ZnO Nanowire Heterojunction

The investigation of photodetectors with broadband response and high responsivity is essential. Zinc Oxide (ZnO) nanowire has the potential of application in photodetectors, owing to the great optoelectrical property and good stability in the atmosphere. However, due to a large number of nonradiative centers at interface and the capture of surface state electrons, the photocurrent of ZnO based photodetectors is still low. In this work, 2D Bi2Se3/ZnO NWAs heterojunction with type-I band alignment is established. This heterojunction device shows not only an enhanced photoresponsivity of 0.15 A/W at 377 nm three times of the bare ZnO nanowire (0.046 A/W), but also a broadband photoresponse from UV to near infrared region has been achieved. These results indicate that the Bi2Se3/ZnO NWAs type-I heterojunction is an ideal photodetector in broadband detection.