Topological and transport properties of graphene-based nanojunctions subjected to a magnetic field

Flexible thermoelectrics in crossed graphene/hBN composites

Nanostructures exhibit unusual properties due to the dominance of quantum mechanical effects. In addition, the geometry of a nanostructure can have a strong influence on its physical properties. Using the tight-binding and force-constant approaches with the help of the non-equilibrium Green's function method, the transport and thermoelectric properties of cross-shaped (X-shaped) composite heterostructures are studied in two cases: Mixed graphene and h-BN (HETX-CBN) and all graphene (HETX-C) cross-shaped structures. Our numerical results show that an X-shaped structure helps to manipulate its electronic and phononic properties. The transport energy gap can be tuned in the range of ~ 0.8 eV by changing one arm width. Due to the drastic decrease in the electronic conductance of HETX-CBN and the dominance of the phononic thermal conductance, the ZT performance is degraded despite the high Seebeck coefficient value (in the order of meV). However, HETX-C has better ZT performance due to better electronic conductance and lower phononic/electronic thermal ratio, it can enhance the ZT ~ 2.5 times compared to that of zigzag graphene nanoribbon. The thermoelectric properties of the system can be tuned by controlling the size of the arms of the device and the type of its atoms.

Tuning phononic and electronic contributions of thermoelectric in defected S-shape graphene nanoribbons

Thermoelectrics as a way to use waste heat, is essential in electronic industries, but its low performance at operational temperatures makes it inappropriate in practical applications. Tailoring graphene can change its properties. In this work, we are interested in studying the transport properties of S-shape graphene structures with the single vacancy (SV) and double vacancy (DV) models. The structures are composed of a chiral part, which is an armchair graphene nanoribbon, and two zigzag graphene ribbons. We investigate the changes in the figure of merit by means of the Seebeck coefficient, electronic conductance, and electronic and phononic conductances with the vacancies in different device sizes. The transport properties of the system are studied by using the non-equilibrium Green’s function method, so that the related Hamiltonians (dynamical matrices) are obtained from the tight-binding (force constant) model. The maximum figure of merit (ZT) obtains for the DVs in all lengths. Physical properties of such a system can be tuned by controlling various parameters such as the location and the type of the defects, and the device size. Our findings show that lengthening the structure can reduce phononic contribution, and single vacancies than double vacancies can better distinguish between electronic thermal conductance behavior and electronic conductance one. Namely, vacancy engineering can significantly increase thermoelectric performance. In the large devices, the SVs can increase the ZT up to 2.5 times.

Predicting the new carbon nanocages, fullerynes: a DFT study

In this study, based on density functional theory, we propose a new branch of pseudo-fullerenes which contain triple bonds with sp hybridization. We call these new nanostructures fullerynes, according to IUPAC. We present four samples with the chemical formula of C4nHn, and the structures derived from fulleranes. We compare the structural and electronic properties of these structures with those of two common fullerenes and fulleranes systems. The calculated electron affinities of the sampled fullerynes are negative, and much smaller than those of fullerenes, so they should be chemically more stable than fullerenes. Although fulleranes also exhibit higher chemical stability than fullerynes, but pentagon or hexagon of the fullerane structures cannot pass ions and molecules. Applications of fullerynes can be included in the storage of ions and gases at the nanoscale. On the other hand, they can also be used as cathode/anode electrodes in lithium-ion batteries.

Thermal rectification and interfacial thermal resistance in hybrid pillared-graphene and graphene: a molecular dynamics and continuum approach

We investigate thermal rectification and thermal resistance in a hybrid pillared-graphene and graphene (PGG) system by both molecular dynamics (MD) simulation and a continuum model. First, the thermal conductivity of both pillared-graphene and graphene is calculated by employing MD simulation and Fourier's law. Our results show that the thermal conductivity of the pillared-graphene is much smaller than that of graphene by one order of magnitude. Next, by applying positive and negative temperature gradients along the longitudinal direction of the PGG, the thermal rectification is examined. The MD results indicate that for the lengths in the range of 3686 nm, the thermal rectification remains almost constant (~3%-5%). We have also studied the phonon density of states (DOS) on both sides of the interface of PGG. The DOS curves show that there is phonon scattering at low frequencies that depends on the imposed temperature gradient direction in the system. Therefore, we can introduce the PGG as a thermal rectifier at room temperature. Furthermore, next, we also explore the temperature distribution over the PGG by using the continuum model. The results obtained from the continuum model predict the MD results, such as the temperature distribution in the upper half-layer and lower full-layer graphene, the temperature gap, and also the thermal resistance at the interface. This study could help in the design of chip coolers, and phononic devices such as thermal nanodiodes.