Strain, electric-field and functionalization induced widely tunable electronic properties in MoS2/BC 3, /C 3 N and /[Formula: see text] van der Waals heterostructures

Influence of shear strain on the electronic properties of monolayers MoS2, WS2, and MoS2/WS2 vdW heterostructure

CONTEXT

This study investigates the dynamic stability of monolayers MoS2, WS2, and MoS2/WS2 van der Waals heterostructures (vdWHs) and the influence of shear strain on their electronic properties. The computational results of the binding energy and phonon dispersion demonstrate the excellent dynamic stability of MoS2/WS2 vdWHs. The MoS2/WS2 vdWH, with a type-II band alignment and an indirect bandgap, reduces electron-hole recombination, enhancing the efficiency and performance of optoelectronic devices. Under shear strain, the bandgap size and type of monolayers MoS2, WS2, and MoS2/WS2 vdWHs were effectively modulated, along with the interlayer charge redistribution in the MoS2/WS2 vdWHs. This work reveals the tunability of the electronic properties of monolayers MoS2, WS2, and MoS2/WS2 vdWHs under shear strain, offering new possibilities and solutions for developing optoelectronic devices, sensors, and related fields.

METHODS

This work employed the CASTEP module within the Materials Studio software package for first-principles calculations. Ultrasoft pseudopotentials were employed during geometry optimizations to account for ion-electron interactions using the GGA-PBE functional for exchange-correlation potentials. The electronic configurations of the S, Mo, and W atoms were chosen as their typical arrangements: (3s2p4), (4s2p6d55s1), and (5s2p6d46s2), respectively. A vacuum layer of 20 Å was added to avoid interactions between the atomic layers. A cutoff energy of 500 eV was set for structural optimization and self-consistent calculations, with k-point grids of 6 × 6 × 1 and 9 × 9 × 1. During the structural optimization process, the energy convergence criterion was set to 1 × 10-5 eV, and the thresholds for interatomic forces and stresses were set to 0.01 eV/Å and 0.01 GPa, respectively. Grimmer's DFT-D2 correction accounted for the interlayer vdW interactions in the MoS2/WS2 vdWH, while the phonon dispersion was calculated using the linear response method.

Strain-induced modification in thermal properties of monolayer 1 T-ZrS2 and ZrS2/ZrSe2 heterojunction

CONTEXT

This paper systematically analyzes the phonon dispersion curves of single-layer ZrS2, ZrSe2, and ZrS2/ZrSe2 heterostructures under different strains. The phonon spectra and thermal parameters of the three structures were obtained based on the density functional perturbation theory method. The upper limits of strain that different monolayers and heterojunctions can withstand were studied. The monolayers ZrSe2 and ZrS2 can withstand up to 8% biaxial tensile strain, and the ZrS2/ZrSe2 heterojunction can withstand up to 6% biaxial tensile strain. In addition, the van der Waals force of the heterojunction may cause phonon tearing in the vertical direction. The application of biaxial tensile strain can adjust the thermal properties of the system to a large extent, which is similar to the strain effect in the pristine case. When the temperature rises, the entropy enthalpy of the three structures also gradually increases, the free energy gradually decreases, and the heat capacity of the system gradually increases until it tends to be stable. Taking single-layer ZrS2 as an example, we analyzed the change curve of thermal properties of single-layer ZrS2 under tensile strain. The results show that with the gradual increase of strain, the crystal's entropy, enthalpy, and free energy change differently. In addition, the heat capacity increases slowly under high temperatures. When all systems reach the limit strain, the phonon spectrum appears to have an imaginary frequency, and the thermal properties decrease significantly.

METHODS

This paper uses the first-principle calculation method based on density functional theory, and the PBE exchange-correlation function based on generalized gradient approximation (GGA) is selected for a specific calculation. The density functional perturbation theory (DFPT) calculates the full kinetic matrix. Because the lattice constants of ZrS2 and ZrSe2 are similar and have similar periodicity, the corresponding unit cells are used for structural optimization and property calculation. The Brillouin zone is integrated using the K points generated by the Monkhorst-pack method. For single-layers ZrS2 and ZrSe2, 8 × 8 × 1 K-point grid is selected, and for ZrS2/ZrSe2 heterojunction, 8 × 8 × 2 K-point grid is selected. A vacuum layer of 30 Å was added in the vertical direction to avoid interlayer interaction. The non-conservative pseudopotential method is used to optimize the structure, and the optimization convergence is set as follows: the cutoff energy is set to 700 eV, the convergence threshold of the maximum force between atoms is 0.01 eV/Å, the convergence threshold of the maximum energy change is set to 1 × 10-9 eV, and the convergence threshold of the maximum displacement is 0.001 Å.

The Combined Effects of an External Field and Novel Functional Groups on the Structural and Electronic Properties of TMDs/Ti3C2 Heterostructures: A First-Principles Study

The stacking of Ti₃C₂ with transition metal dihalide (TMDs) materials is an effective strategy to improve the physical properties of a single material, and the tuning of the related properties of these TMDs/Ti₃C₂ heterostructures is also an important scientific problem. In this work, we systematically investigated the effects of an external field and novel functional groups (S, Se, Cl, Br) on the structural and electronic properties of TMDs/Ti₃C₂X₂ heterostructures. The results revealed that the lattice parameters and interlayer distance of TMDs/Ti₃C₂ increased with the addition of functional groups. Both tensile and compressive strain obviously increased the interlayer distance of MoS₂/Ti₃C₂X₂ (X = S, Se, Cl, Br) and MoSe₂/Ti₃C₂X₂ (X = Se, Br). In contrast, the interlayer distance of MoSe₂/Ti₃C₂X₂ (X = S, Cl) decreased with increasing compressive strain. Furthermore, the conductivity of TMDs/Ti₃C₂ increased due to the addition of functional groups (Cl, Br). Strain caused the bandgap of TMDs to narrow, and effectively adjusted the electronic properties of TMDs/Ti₃C₂X₂. At 9% compressive strain, the conductivity of MoSe₂/Ti₃C₂Cl₂ increased significantly. Meanwhile, for TMDs/Ti₃C₂X₂, the conduction band edge (CBE) and valence band edge (VBE) at the M and K points changed linearly under an electric field. This study provides valuable insight into the combined effects of an external field and novel functional groups on the related properties of TMDs/Ti₃C₂X₂.

Manipulation of current rectification in van der Waals ferroionic CuInP2S6

Developing a single-phase self-rectifying memristor with the continuously tunable feature is structurally desirable and functionally adaptive to dynamic environmental stimuli variations, which is the pursuit of further smart memristors and neuromorphic computing. Herein, we report a van der Waals ferroelectric CuInP2S6 as a single memristor with superior continuous modulation of current and self-rectifying to different bias stimuli (sweeping speed, direction, amplitude, etc.) and external mechanical load. The synergetic contribution of controllable Cu+ ions migration and interfacial Schottky barrier is proposed to dynamically control the current flow and device performance. These outstanding sensitive features make this material possible for being superior candidate for future smart memristors with bidirectional operation mode and strong recognition to input faults and variations.

First principles study of electronic and optical properties and photocatalytic performance of GaN-SiS van der Waals heterostructure

The vertical stacking of two-dimensional materials via van der Waals (vdW) interaction is a promising technique for tailoring the physical properties and fabricating potential devices to be applied in the emerging fields of materials science and nanotechnology. The structural, electronic and optical properties and photocatalytic performance of a GaN-SiS vdW heterostructure were explored using first principles calculations. The most stable stacking configuration found energetically stable, possesses a direct staggered band gap, which is crucial for separating photogenerated charged carriers in different constituents and is efficacious for solar cells. Further, the charge transfer occurred from the SiS to GaN layer, indicating that SiS exhibits p-type doping in the GaN-SiS heterobilayer. Interestingly, a systematic red-shift was observed in the optical absorption spectra of the understudy heterobilayer system. Moreover, the conduction band edge and valence band edge of the monolayers and corresponding heterostructure were located above and below the standard redox potentials for photocatalytic water splitting, making these systems promising for water dissociation for hydrogen fuel production. The results provide a route to design the GaN-SiS vdW heterostructure for the practical realization of next-generation light detection and energy harvesting devices.

Van der Waals heterostructure of graphene and germanane: tuning the ohmic contact by electrostatic gating and mechanical strain

Recent exciting developments in synthesis and properties study of the Germanane (GeH) monolayer have inspired us to investigate the structural and electronic properties of the van der Waals GeH/Graphene (Gr) heterostructure by the first-principle approach. The stability of the GeH/Gr heterostructure is verified by calculating the phonon dispersion curves as well as by thermodynamic binding energy calculations. According to the band structure calculation, the GeH/Gr interface is n-type Ohmic. The effects of different interlayer distances and strains between the layers and the applied electric field on the interface have been investigated to gain insight into the van der Waals heterostructure modifications. An interlayer distance of 2.11 Å and compressive strain of 6% alter the contact from Ohmic to Schottky status, while the electric field can tune the GeH/Gr contact as p- or n-type, Ohmic, or Schottky. The average electrostatic potential of GeH/Gr and the Bader charge analysis have been used to explain the results obtained. Our theoretical study could provide a promising approach for improving the electronic performance of GeH/Gr-based nano-rectifiers.

Hypersonic impact properties of pristine and hybrid single and multi-layer C3N and BC3 nanosheets

Carbon, nitrogen, and boron nanostructures are promising ballistic protection materials due to their low density and excellent mechanical properties. In this study, the ballistic properties of C3N and BC3 nanosheets against hypersonic bullets with Mach numbers greater than 6 were studied. The critical perforation conditions, and thus, the intrinsic impact strength of these 2D materials were determined by simulating ballistic curves of C3N and BC3 monolayers. Furthermore, the energy absorption scaling law with different numbers of layers and interlayer spacing was investigated, for homogeneous or hybrid configurations (alternated stacking of C3N and the BC3). Besides, we created a hybrid sheet using van der Waals bonds between two adjacent sheets based on the hypervelocity impacts of fullerene (C60) molecules utilizing molecular dynamics simulation. As a result, since the higher bond energy between N-C compared to B-C, it was shown that C3N nanosheets have higher absorption energy than BC3. In contrast, in lower impact speeds and before penetration, single-layer sheets exhibited almost similar behavior. Our findings also reveal that in hybrid structures, the C3N layers will improve the ballistic properties of BC3. The energy absorption values with a variable number of layers and variable interlayer distance (X = 3.4 Å and 4X = 13.6 Å) are investigated, for homogeneous or hybrid configurations. These results provide a fundamental understanding of ultra-light multilayered armors' design using nanocomposites based on advanced 2D materials. The results can also be used to select and make 2D membranes and allotropes for DNA sequencing and filtration.

Two-dimensional carbon nitride C6N nanosheet with egg-comb-like structure and electronic properties of a semimetal

In this study, the structural, electronic and optical properties of theoretically predicted C₆N monolayer structure are investigated by means of Density Functional Theory-based First-Principles Calculations. Phonon band dispersion calculations and molecular dynamics simulations reveal the dynamical and thermal stability of the C₆N single-layer structure. We found out that the C₆N monolayer has large negative in-plane Poisson's ratios along bothXandYdirection and the both values are almost four times that of the famous-pentagraphene. The electronic structure shows that C₆N monolayer is a semi-metal and has a Dirac-point in the BZ. The optical analysis using the random phase approximation method constructed over HSE06 illustrates that the first peak of absorption coefficient of the C₆N monolayer along all polarizations is located in theIRrange of spectrum, while the second absorption peak occurs in the visible range, which suggests its potential applications in optical and electronic devices. Interestingly, optically anisotropic character of this system is highly desirable for the design of polarization-sensitive photodetectors. Thermoelectric properties such as Seebeck coefficient, electrical conductivity, electronic thermal conductivity and power factor are investigated as a function of carrier doping at temperatures 300, 400, and 500 K. In general, we predict that the C₆N monolayer could be a new platform for study of novel physical properties in two-dimensional semi-metal materials, which may provide new opportunities to realize high-speed low-dissipation devices.

Tunable electronic properties of BSe-MoS2/WS2 heterostructures for promoted light utilization

With applications in high performance electronics, photovoltaics, and catalysis, two-dimensional (2D) transition metal dichalcogenides (TMDCs) attract extensive attention due to their extraordinary physical properties. People have focused on TMDC-based materials for years, while the low mobility greatly hinders their further application. TMDC-based heterostructures with tunable band alignment have been experimentally confirmed to be feasible for photoelectronic devices or photocatalysts. Based on the density functional theory (DFT), there are four discoveries in this work: (1) we propose two new heterostructures based on BSe and MoS2/WS2 that have quite low mismatches and intrinsic type-II alignments. (2) Even though the VBM of BSe-MoS2 are completely contributed by BSe, the heterostructure is still endowed with a lower effective mass and a better transport characteristic in comparison with pristine structures. (3) A promoted absorption ability and a better transport characteristic oppose each other and the two characteristics cannot be obtained at the same time. (4) Tension strained structures can induce promoted light absorption in the solar spectrum and the predicted efficiency of the BSe-MoS2 bilayer can be as high as ∼19.3%, when the external electric field is applied. This theoretical survey proves that BSe-MoS2/WS2 with high flexibility and tunability are potential candidates for novel electronic devices and photocatalysts.

A van der Waals heterostructure of MoS2/MoSi2N4: a first-principles study

Motivated by the successful preparation of MoSi₂N₄ monolayers in the last year [Y.-L. Hong et al., Science, 2020, 369, 670–674], the structural, electronic and optical properties of MoS₂/MoSi₂N₄ heterostructure are investigated.

Fadlallah M, V. Chuong N, Ghergherehchi M, Faraji M, Feghhi SAH, Oskoeian M. Electronic and optical properties of two-dimensional heterostructures and heterojunctions between doped-graphene and C- and N-containing materials

The electronic and optical properties of vertical heterostructures (HTSs) and lateral heterojunctions (HTJs) between (B,N)-codoped graphene (dop@Gr) and graphene (Gr), C₃N, BC₃ and h-BN monolayers are investigated using van der Waals density functional theory calculations.

A theoretical design of photodetectors based on two-dimensional Sb/AlAs type-II heterostructures

Sb/AlAs heterostructures with direct-gap and type-II band alignment can effectively facilitate the spatial separation of photogenerated carriers.

Surface modification of titanium carbide MXene monolayers (Ti2C and Ti3C2) via chalcogenide and halogenide atoms

Inspired by the recent successful growth of Ti2C and Ti3C2 monolayers, here, we investigate the structural, electronic, and mechanical properties of functionalized Ti2C and Ti3C2 monolayers by means of density functional theory calculations. The results reveal that monolayers of Ti2C and Ti3C2 are dynamically stable metals. Phonon band dispersion calculations demonstrate that two-surface functionalization of Ti2C and Ti3C2via chalcogenides (S, Se, and Te), halides (F, Cl, Br, and I), and oxygen atoms results in dynamically stable novel functionalized monolayer materials. Electronic band dispersions and density of states calculations reveal that all functionalized monolayer structures preserve the metallic nature of both Ti2C and Ti3C2 except Ti2C-O2, which possesses the behavior of an indirect semiconductor via full-surface oxygen passivation. In addition, it is shown that although halide passivated Ti3C2 structures are still metallic, there exist multiple Dirac-like cones around the Fermi energy level, which indicates that semi-metallic behavior can be obtained upon external effects by tuning the energy of the Dirac cones. In addition, the computed linear-elastic parameters prove that functionalization is a powerful tool in tuning the mechanical properties of stiff monolayers of bare Ti2C and Ti3C2. Our study discloses that the electronic and structural properties of Ti2C and Ti3C2 MXene monolayers are suitable for surface modification, which is highly desirable for material property engineering and device integration.

Investigation of strain behavior and carrier mobility of organic-inorganic hybrid perovskites: (C4H9NH3)2GeI4 and (C4H9NH3)2SnI4

Two dimensional (2D) organic-inorganic hybrid perovskites have attracted great interest due to their tunable band gap and structural stability. In this study, biaxial strain behavior and carrier mobility of monolayers (C₄H₉NH₃)₂GeI₄ and (C₄H₉NH₃)₂SnI₄ are investigated by first principles calculations. (C₄H₉NH₃)₂GeI₄ and (C₄H₉NH₃)₂SnI₄ still retain their structural stability at ε = 13% and ε = 15%, respectively. Ab initio molecular dynamics (AIMD) simulation has confirmed that the system at 300 K is still thermodynamically stable at a biaxial strain of ε = 8%. The band gaps of (C₄H₉NH₃)₂GeI₄ and (C₄H₉NH₃)₂SnI₄ calculated from the HSE06 functional are increased from 2.427 and 1.953 eV at zero strain to 3.002 and 2.626 eV at ε = 8%. Deformation potential (DP) models based on longitudinal acoustic phonon (LAP) and optical phonon (OP) scattering are used to investigate mobility. The mobility of (C₄H₉NH₃)₂GeI₄ is lower than that of (C₄H₉NH₃)₂SnI₄. It is mainly determined by the scattering from OP with lower energy and decreases sharply with an increase in biaxial strain. Compared with Pb based perovskites, (C₄H₉NH₃)₂SnI₄ exhibits high carrier mobility and thermodynamic stability.

Two-Dimensional CdX/C2N (X = S, Se) Heterostructures as Potential Photocatalysts for Water Splitting: A DFT Study

Global environmental issues, in addition to limited fossil fuel resources, are being addressed by quests in search of efficient visible-light-driven water splitting catalysts for hydrogen production. The photocatalytic water splitting activities of CdX/C2N (X = S, Se) heterostructures have been investigated here using hybrid density functional theory calculations. The calculated band gaps of CdS/C2N and CdSe/C2N heterostructures are 1.48 and 2.12 eV, respectively. These are ideal band gap values that make possible harvesting of more visible light from the solar spectrum, which will result in high solar to energy conversion efficiencies. Charge density difference analysis shows that the charge redistributions mainly occur in the interface regions and that the charges transfer from the C2N to CdX layers. It is interesting to note that the CdX/C2N heterostructures possess a type-II band alignment, where the relative band alignment of the C2N and CdX monolayers promotes a spatial separation of the electrons (that resides in C2N) and holes (that resides in CdX). Importantly, the band edges of the heterostructures straddle the water redox potential under different pH conditions. This study demonstrates that the CdS/C2N and CdSe/C2N heterostructures are suitable materials to split water (from various sources) in different ranges of pH values.

Investigation of strain and doping on the electronic properties of single layers of C6N6 and C6N8: a first principles study

In this work, by performing first-principles calculations, we explore the effects of various atom impurities on the electronic and magnetic properties of single layers of C6N6 and C6N8. Our results indicate that atom doping may significantly modify the electronic properties. Surprisingly, doping Cr into a holey site of C6N6 monolayer was found to exhibit a narrow band gap of 125 meV upon compression strain, considering the spin-orbit coupling effect. Also, a C atom doped in C6N8 monolayer shows semi-metal nature under compression strains larger than -2%. Our results propose that Mg or Ca doped into strained C6N6 may exhibit small band gaps in the range of 10-30 meV. In addition, a magnetic-to-nonmagnetic phase transition can occur under large tensile strains in the Ca doped C6N8 monolayer. Our results highlight the electronic properties and magnetism of C6N6 and C6N8 monolayers. Our results show that the electronic properties can be effectively modified by atom doping and mechanical strain, thereby offering new possibilities to tailor the electronic and magnetic properties of C6N6 and C6N8 carbon nitride monolayers.

Tunable electronic properties of the dynamically stable layered mineral Pt2HgSe3 (Jacutingaite)

Density functional theory calculations are performed in order to study the structural and electronic properties of monolayer Pt₂HgSe₃. Effects of uniaxial and biaxial strain, layer thickness, electric field and out-of-plane pressure on the electronic properties are systematically investigated.

Electronic structures, and optical and photocatalytic properties of the BP–BSe van der Waals heterostructures

The combination of two-dimensional materials in the form of van der Waals (vdW) heterostructures has been shown to be an effective method for designing electronic and optoelectronic equipment.

The mechanical, electronic, optical and thermoelectric properties of two-dimensional honeycomb-like of XSb (X = Si, Ge, Sn) monolayers: a first-principles calculations

Herein, by using first-principles calculations, we demonstrate a two-dimensional (2D) of XSb (X = Si, Ge, and Sn) monolayers that have a honey-like crystal structure.

Modulating the electro-optical properties of doped C3N monolayers and graphene bilayers via mechanical strain and pressure

The effect of atomic doping on the electronic properties of C₃N monolayer and graphene bilayer is investigated. We found that doped C₃N monolayer and doped graphene bilayer are a direct semiconductor. Our result show that the electronic properties of the studied structures can be modulated by electric field and mechanical strain.