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Kumar S, Fossard F, Amiri G, Chauveau JM, Sallet V. MOCVD Growth and Structural Properties of ZnS Nanowires: A Case Study of Polytypism. NANOMATERIALS 2022; 12:nano12142323. [PMID: 35889548 PMCID: PMC9317335 DOI: 10.3390/nano12142323] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 06/01/2022] [Revised: 07/01/2022] [Accepted: 07/03/2022] [Indexed: 02/04/2023]
Abstract
Controlling the morphology, orientation, and crystal phase of semiconductor nanowires is crucial for their future applications in nanodevices. In this work, zinc sulfide (ZnS) nanowires have been grown by metalorganic chemical vapor deposition (MOCVD), using gold or gold–gallium alloys as catalyst. At first, basic studies on MOCVD growth regimes (mass-transport, zinc- or sulfur- rich conditions) have been carried out for ZnS thin films. Subsequently, the growth of ZnS nanowires was investigated, as a function of key parameters such as substrate temperature, S/Zn ratio, physical state and composition of the catalyst droplet, and supersaturation. A detailed analysis of the structural properties by transmission electron microscopy (TEM) is given. Depending on the growth conditions, a variety of polytypes is observed: zinc-blende (3C), wurtzite (2H) as well as an uncommon 15R crystal phase. It is demonstrated that twinning superlattices, i.e., 3C structures with periodic twin defects, can be achieved by increasing the Ga concentration of the catalyst. These experimental results are discussed in the light of growth mechanisms reported for semiconductor nanowires. Hence, in this work, the control of ZnS nanowire structural properties appears as a case study for the better understanding of polytypism in semiconductor 1D nanostructures.
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Affiliation(s)
- Sumit Kumar
- Groupe d’Étude de la Matière Condensée (GEMAC), Centre National de la Recherche Scientifique, Université de Versailles St Quentin en Yvelines, Université Paris-Saclay, 45 Avenue des Etats-Unis, 78035 Versailles, France; (S.K.); (G.A.); (J.-M.C.)
| | - Frédéric Fossard
- Laboratoire d’Étude des Microstructures (LEM), Centre National de la Recherche Scientifique, Office National d’Etudes et de Recherches Aérospatiales, Université Paris-Saclay, 29 Avenue Division Leclerc, 92322 Chatillon, France;
| | - Gaelle Amiri
- Groupe d’Étude de la Matière Condensée (GEMAC), Centre National de la Recherche Scientifique, Université de Versailles St Quentin en Yvelines, Université Paris-Saclay, 45 Avenue des Etats-Unis, 78035 Versailles, France; (S.K.); (G.A.); (J.-M.C.)
| | - Jean-Michel Chauveau
- Groupe d’Étude de la Matière Condensée (GEMAC), Centre National de la Recherche Scientifique, Université de Versailles St Quentin en Yvelines, Université Paris-Saclay, 45 Avenue des Etats-Unis, 78035 Versailles, France; (S.K.); (G.A.); (J.-M.C.)
| | - Vincent Sallet
- Groupe d’Étude de la Matière Condensée (GEMAC), Centre National de la Recherche Scientifique, Université de Versailles St Quentin en Yvelines, Université Paris-Saclay, 45 Avenue des Etats-Unis, 78035 Versailles, France; (S.K.); (G.A.); (J.-M.C.)
- Correspondence:
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Jaffal A, Regreny P, Patriarche G, Gendry M, Chauvin N. Highly linear polarized emission at telecom bands in InAs/InP quantum dot-nanowires by geometry tailoring. NANOSCALE 2021; 13:16952-16958. [PMID: 34610634 DOI: 10.1039/d1nr04263g] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Nanowire (NW)-based opto-electronic devices require certain engineering in the NW geometry to realize polarized-dependent light sources and photodetectors. We present a growth procedure to produce InAs/InP quantum dot-nanowires (QD-NWs) with an elongated top-view cross-section relying on the vapor-liquid-solid method using molecular beam epitaxy. By interrupting the rotation of the sample during the radial growth sequence of the InP shell, hexagonal asymmetric (HA) NWs with long/short cross-section axes were obtained instead of the usual symmetrical shape. Polarization-resolved photoluminescence measurements have revealed a significant influence of the asymmetric shaped NWs on the InAs QD emission polarization with the photons being mainly polarized parallel to the NW long cross-section axis. A degree of linear polarization (DLP) up to 91% is obtained, being at the state of the art for the reported DLP values from QD-NWs. More importantly, the growth protocol herein is fully compatible with the current applications of HA NWs covering a wide range of devices such as polarized light emitting diodes and photodetectors.
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Affiliation(s)
- Ali Jaffal
- Univ Lyon, CNRS, Ecole Centrale de Lyon, INSA Lyon, Université Claude Bernard Lyon 1, CPE Lyon, CNRS, INL, UMR5270, 69130 Ecully, France
- Univ Lyon, CNRS, INSA Lyon, Ecole Centrale de Lyon, Université Claude Bernard Lyon 1, CPE Lyon, INL, UMR5270, 69621 Villeurbanne, France.
| | - Philippe Regreny
- Univ Lyon, CNRS, Ecole Centrale de Lyon, INSA Lyon, Université Claude Bernard Lyon 1, CPE Lyon, CNRS, INL, UMR5270, 69130 Ecully, France
| | - Gilles Patriarche
- Université Paris-Saclay, CNRS, Centre de Nanosciences et de Nanotechnologies - C2N, 91120, Palaiseau, France
| | - Michel Gendry
- Univ Lyon, CNRS, Ecole Centrale de Lyon, INSA Lyon, Université Claude Bernard Lyon 1, CPE Lyon, CNRS, INL, UMR5270, 69130 Ecully, France
| | - Nicolas Chauvin
- Univ Lyon, CNRS, INSA Lyon, Ecole Centrale de Lyon, Université Claude Bernard Lyon 1, CPE Lyon, INL, UMR5270, 69621 Villeurbanne, France.
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