Electric filed dependent valley polarization in 2D WSe2/CrGeTe3 heterostructure

Transition Metal Dichalcogenides: Making Atomic-Level Magnetism Tunable with Light at Room Temperature

The capacity to manipulate magnetization in 2D dilute magnetic semiconductors (2D-DMSs) using light, specifically in magnetically doped transition metal dichalcogenide (TMD) monolayers (M-doped TX2 , where M = V, Fe, and Cr; T = W, Mo; X = S, Se, and Te), may lead to innovative applications in spintronics, spin-caloritronics, valleytronics, and quantum computation. This Perspective paper explores the mediation of magnetization by light under ambient conditions in 2D-TMD DMSs and heterostructures. By combining magneto-LC resonance (MLCR) experiments with density functional theory (DFT) calculations, we show that the magnetization can be enhanced using light in V-doped TMD monolayers (e.g., V-WS2 , V-WSe2 ). This phenomenon is attributed to excess holes in the conduction and valence bands, and carriers trapped in magnetic doping states, mediating the magnetization of the semiconducting layer. In 2D-TMD heterostructures (VSe2 /WS2 , VSe2 /MoS2 ), the significance of proximity, charge-transfer, and confinement effects in amplifying light-mediated magnetism is demonstrated. We attributed this to photon absorption at the TMD layer that generates electron-hole pairs mediating the magnetization of the heterostructure. These findings will encourage further research in the field of 2D magnetism and establish a novel design of 2D-TMDs and heterostructures with optically tunable magnetic functionalities, paving the way for next-generation magneto-optic nanodevices.

Magnetoresistance of Ni/WSe2/Ni junctions: robustness against the thickness of WSe2

Magnetoresistive materials are vital for the development of storage devices. Using the first-principles transport simulations with nonequilibrium Green's function calculation, we investigate the magnetoresistive properties of Ni/WSe₂/Ni junctions withm-layers of WSe₂(m= 1, 2, ⋯ ,6). Form≤ 2, the junctions are metallic inspite of the semiconducting nature of few-layer WSe₂. However, the junctions exhibit transport gaps form> 2. Interestingly, magnetoresistance of the junctions stays around 6% when there are more than one layer of WSe₂in the center, which is closely related to the robust spacial variation of interfacial properties and can be attributed to no spin flipping in tunneling regions. Our results suggest that Ni/WSe₂/Ni junctions have a robust magnetoresistance which is insensitive to the thickness of WSe₂.

Strain tuning of the Curie temperature and valley polarization in two dimensional ferromagnetic WSe2/CrSnSe3heterostructure

Magnetic proximity effect can be used to tailor the magnetic ground state and valley polarization in the monolayer of transition metal dichalcogenides. Thus, we explore the effect of biaxial tensile and compressive strain on valley polarization in the WSe₂/CrSnSe₃heterostructures with different stacking orders systematically. The indirect band gaps in the two most stable stackings; hollow (0.27 eV) and top (0.33 eV) were further enhanced to 0.35 eV under tensile strain while suppressed to almost 0.13 eV under compressive strain. The heterostructures had a FM ground state with a total magnetic moment per unit cell of 6μ_Bin pristine as well as strained structures. In hollow stacking and compressively strained structures, we obtained a perpendicular magnetocrystalline anisotropy, while the top stacking and tensile strain structures had small in-plane anisotropy. An enhancement was found in Curie temperature from 73 K in pristine to 128 K in a 6% tensile strained structure. The valley splittings found in pristine hollow (4 meV) and top (9 meV) stacked heterostructures were further enhanced to 29 meV and 22 meV at 5% compressive strain respectively. This enhancement was attributed to the increased spatial dependence of the charge density along K⁺and K^-directions of the Brillouin zone, which give rise to the different local dipolar fields at these valleys. Our results suggest that strain could be an effective way to control or tune the valley splitting in WSe₂/CrSnSe₃heterostructures.

Exploring promising gas sensing and highly active catalysts for CO oxidation: transition-metal (Fe, Co and Ni) adsorbed Janus MoSSe monolayers

From first-principles calculations, the transition-metal (TM) atom (Fe, Co and Ni) adsorbed Janus MoSSe monolayer, toxic gas molecules (CO, NH3 and H2S) adsorbed on the Ni-MoSSe monolayer and CO catalytic oxidation on the Fe-MoSSe monolayer are systematically investigated. An increasing order (Fe-MoSSe < Co-MoSSe < Ni-MoSSe) is found for the stability and band gap of the TM atom adsorbed Janus MoSSe monolayer. These toxic gas molecules are found to be weakly physisorbed and strongly chemisorbed on the pristine and Ni-MoSSe monolayers, respectively. The electronic structure and gas molecular adsorption properties of the Janus MoSSe monolayer can be modulated by adsorbing different TM atoms and gas molecules. Particularly, the CO catalytic oxidation can be realized on the Fe-MoSSe monolayer in light of the more preferable Eley-Rideal (ER) mechanism with the two-step route (CO + O2 → OOCO → CO2 + Oads, CO + Oads → CO2) with highly exothermic processes in each step. The adsorption of TM atoms which may greatly enhance gas sensing performance and catalytic performance of CO oxidation based on the Janus MoSSe monolayer is further discussed.