1
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Shutt RRC, Aw ESY, Liu Q, Berry-Gair J, Lancaster HJ, Said S, Miller TS, Corà F, Howard CA, Clancy AJ. Investigating the mechanism of phosphorene nanoribbon synthesis by discharging black phosphorus intercalation compounds. NANOSCALE 2024; 16:1742-1750. [PMID: 38197428 DOI: 10.1039/d3nr05416k] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/11/2024]
Abstract
Phosphorene nanoribbons (PNRs) can be synthesised in intrinsically scalable methods from intercalation of black phosphorus (BP), however, the mechanism of ribbonisation remains unclear. Herein, to investigate the point at which nanoribbons form, we decouple the two key synthesis steps: first, the formation of the BP intercalation compound, and second, the dissolution into a polar aprotic solvent. We find that both the lithium intercalant and the negative charge on the phosphorus host framework can be effectively removed by addition of phenyl cyanide to return BP and investigate whether fracturing to ribbons occurred after the first step. Further efforts to exfoliate mechanically with or without solvent reveal that the intercalation step does not form ribbons, indicating that an interaction between the amidic solvent and the intercalated phosphorus compound plays an important role in the formation of nanoribbons.
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Affiliation(s)
- Rebecca R C Shutt
- Department of Physics and Astronomy, University College London, London, WC1E 6BT, UK.
| | - Eva S Y Aw
- Department of Physics and Astronomy, University College London, London, WC1E 6BT, UK.
| | - Qili Liu
- Department of Chemistry, University College London, London, WC1E 0AJ, UK.
| | - Jasper Berry-Gair
- Department of Chemistry, University College London, London, WC1E 0AJ, UK.
| | - Hector J Lancaster
- Department of Physics and Astronomy, University College London, London, WC1E 6BT, UK.
| | - Samia Said
- Electrochemical Innovation Laboratory, Department of Chemical Engineering, University College London, Gower Street, London, WC1E 6BT, UK
| | - Thomas S Miller
- Electrochemical Innovation Laboratory, Department of Chemical Engineering, University College London, Gower Street, London, WC1E 6BT, UK
| | - Furio Corà
- Department of Chemistry, University College London, London, WC1E 0AJ, UK.
| | - Christopher A Howard
- Department of Physics and Astronomy, University College London, London, WC1E 6BT, UK.
| | - Adam J Clancy
- Department of Chemistry, University College London, London, WC1E 0AJ, UK.
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2
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Yin Z, Panaccione W, Hu A, Douglas ORT, Tanjil MRE, Jeong Y, Zhao H, Wang MC. Directionally-Resolved Phononic Properties of Monolayer 2D Molybdenum Ditelluride (MoTe 2) under Uniaxial Elastic Strain. NANO LETTERS 2023; 23:11763-11770. [PMID: 38100381 DOI: 10.1021/acs.nanolett.3c03706] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 12/17/2023]
Abstract
Understanding the phonon characteristics of two-dimensional (2D) molybdenum ditelluride (MoTe2) under strain is critical to manipulating its multiphysical properties. Although there have been numerous computational efforts to elucidate the strain-coupled phonon properties of monolayer MoTe2, empirical validation is still lacking. In this work, monolayer 1H-MoTe2 under uniaxial strain is studied via in situ micro-Raman spectroscopy. Directionally dependent monotonic softening of the doubly degenerate in-plane E2g1 phonon mode is observed with increasing uniaxial strain, where the E2g1 peak red-shifts -1.66 ± 0.04 cm-1/% along the armchair direction and -0.80 ± 0.07 cm-1/% along the zigzag direction. The corresponding Grüneisen parameters are calculated to be 1.09 and 0.52 along the armchair and zigzag directions, respectively. This work provides the first empirical quantification and validation of the orientation-dependent strain-coupled phonon response in monolayer 1H-MoTe2 and serves as a benchmark for other prototypical 2D transition-metal tellurides.
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Affiliation(s)
- Zhewen Yin
- Department of Mechanical Engineering, University of South Florida, Tampa, Florida 33620, United States
| | - Wyatt Panaccione
- Department of Mechanical Engineering, University of South Florida, Tampa, Florida 33620, United States
| | - Anjun Hu
- Department of Medical Engineering, University of South Florida, Tampa, Florida 33620, United States
| | - Ossie R T Douglas
- Department of Mechanical Engineering, University of South Florida, Tampa, Florida 33620, United States
| | - Md Rubayat-E Tanjil
- Department of Mechanical Engineering, University of South Florida, Tampa, Florida 33620, United States
| | - Yunjo Jeong
- Department of Mechanical Engineering, University of South Florida, Tampa, Florida 33620, United States
| | - Huijuan Zhao
- Department of Mechanical Engineering, Clemson University, Clemson, South Carolina 29634-0921, United States
| | - Michael Cai Wang
- Department of Mechanical Engineering, University of South Florida, Tampa, Florida 33620, United States
- Department of Medical Engineering, University of South Florida, Tampa, Florida 33620, United States
- Department of Chemical, Biological, and Materials Engineering, University of South Florida, Tampa, Florida 33620, United States
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3
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Das C, Martín C, Habermann S, Walker HR, Iqbal J, Elies J, Jones HS, Reina G, Ruiz A. Co-Loading of Black Phosphorus Nanoflakes and Doxorubicin in Lysolipid Temperature-Sensitive Liposomes for Combination Therapy in Prostate Cancer. Int J Mol Sci 2023; 25:115. [PMID: 38203286 PMCID: PMC10779057 DOI: 10.3390/ijms25010115] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/26/2023] [Revised: 12/01/2023] [Accepted: 12/18/2023] [Indexed: 01/12/2024] Open
Abstract
Black phosphorus (BP) is one of the most promising nanomaterials for cancer therapy. This 2D material is biocompatible and has strong photocatalytic activity, making it a powerful photosensitiser for combined NIR photothermal and photodynamic therapies. However, the fast degradation of BP in oxic conditions (including biological environments) still limits its use in cancer therapy. This work proposes a facile strategy to produce stable and highly concentrated BP suspensions using lysolipid temperature-sensitive liposomes (LTSLs). This approach also allows for co-encapsulating BP nanoflakes and doxorubicin, a potent chemotherapeutic drug. Finally, we demonstrate that our BP/doxorubicin formulation shows per se high antiproliferative action against an in vitro prostate cancer model and that the anticancer activity can be enhanced through NIR irradiance.
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Affiliation(s)
- Chandrima Das
- Institute of Cancer Therapeutics, School of Pharmacy and Medical Sciences, Faculty of Life Sciences, University of Bradford, Bradford BD7 1DP, UK; (C.D.); (H.R.W.); (J.I.); (J.E.); (H.S.J.)
| | - Cristina Martín
- Department of Bioengineering, Universidad Carlos III de Madrid, 28911 Leganés, Spain;
| | - Sebastian Habermann
- Empa Swiss Federal Laboratories for Materials Science and Technology, Lerchenfeldstrasse 5, 9014 St. Gallen, Switzerland;
| | - Harriet Rose Walker
- Institute of Cancer Therapeutics, School of Pharmacy and Medical Sciences, Faculty of Life Sciences, University of Bradford, Bradford BD7 1DP, UK; (C.D.); (H.R.W.); (J.I.); (J.E.); (H.S.J.)
| | - Javed Iqbal
- Institute of Cancer Therapeutics, School of Pharmacy and Medical Sciences, Faculty of Life Sciences, University of Bradford, Bradford BD7 1DP, UK; (C.D.); (H.R.W.); (J.I.); (J.E.); (H.S.J.)
| | - Jacobo Elies
- Institute of Cancer Therapeutics, School of Pharmacy and Medical Sciences, Faculty of Life Sciences, University of Bradford, Bradford BD7 1DP, UK; (C.D.); (H.R.W.); (J.I.); (J.E.); (H.S.J.)
| | - Huw Simon Jones
- Institute of Cancer Therapeutics, School of Pharmacy and Medical Sciences, Faculty of Life Sciences, University of Bradford, Bradford BD7 1DP, UK; (C.D.); (H.R.W.); (J.I.); (J.E.); (H.S.J.)
| | - Giacomo Reina
- Empa Swiss Federal Laboratories for Materials Science and Technology, Lerchenfeldstrasse 5, 9014 St. Gallen, Switzerland;
| | - Amalia Ruiz
- Institute of Cancer Therapeutics, School of Pharmacy and Medical Sciences, Faculty of Life Sciences, University of Bradford, Bradford BD7 1DP, UK; (C.D.); (H.R.W.); (J.I.); (J.E.); (H.S.J.)
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4
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Awate S, Xu K, Liang J, Katz B, Muzzio R, Crespi VH, Katoch J, Fullerton-Shirey SK. Strain-Induced 2H to 1T' Phase Transition in Suspended MoTe 2 Using Electric Double Layer Gating. ACS NANO 2023; 17:22388-22398. [PMID: 37947443 PMCID: PMC10690768 DOI: 10.1021/acsnano.3c04701] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/25/2023] [Revised: 11/03/2023] [Accepted: 11/06/2023] [Indexed: 11/12/2023]
Abstract
MoTe2 can be converted from the semiconducting (2H) phase to the semimetallic (1T') phase by several stimuli including heat, electrochemical doping, and strain. This type of phase transition, if reversible and gate-controlled, could be useful for low-power memory and logic. In this work, a gate-controlled and fully reversible 2H to 1T' phase transition is demonstrated via strain in few-layer suspended MoTe2 field effect transistors. Strain is applied by the electric double layer gating of a suspended channel using a single ion conducting solid polymer electrolyte. The phase transition is confirmed by simultaneous electrical transport and Raman spectroscopy. The out-of-plane vibration peak (A1g)─a signature of the 1T' phase─is observed when VSG ≥ 2.5 V. Further, a redshift in the in-plane vibration mode (E2g) is detected, which is a characteristic of a strain-induced phonon shift. Based on the magnitude of the shift, strain is estimated to be 0.2-0.3% by density functional theory. Electrically, the temperature coefficient of resistance transitions from negative to positive at VSG ≥ 2 V, confirming the transition from semiconducting to metallic. The approach to gate-controlled, reversible straining presented here can be extended to strain other two-dimensional materials, explore fundamental material properties, and introduce electronic device functionalities.
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Affiliation(s)
- Shubham
Sukumar Awate
- Department
of Chemical and Petroleum Engineering, University
of Pittsburgh, Pittsburgh, Pennsylvania 15260, United States
| | - Ke Xu
- Department
of Chemical and Petroleum Engineering, University
of Pittsburgh, Pittsburgh, Pennsylvania 15260, United States
- School
of Physics and Astronomy, Rochester Institute
of Technology, Rochester, New York 14623, United States
- Microsystems
Engineering, Rochester Institute of Technology, Rochester, New York 14623, United States
| | - Jierui Liang
- Department
of Chemical and Petroleum Engineering, University
of Pittsburgh, Pittsburgh, Pennsylvania 15260, United States
| | - Benjamin Katz
- Department
of Physics, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Ryan Muzzio
- Department
of Physics, Carnegie Mellon University, Pittsburgh, Pennsylvania 15213, United States
| | - Vincent H. Crespi
- Department
of Physics, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
- Department
of Materials Science and Engineering, The
Pennsylvania State University, University Park, Pennsylvania 16802, United States
- Department
of Chemistry, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Jyoti Katoch
- Department
of Physics, Carnegie Mellon University, Pittsburgh, Pennsylvania 15213, United States
| | - Susan K. Fullerton-Shirey
- Department
of Chemical and Petroleum Engineering, University
of Pittsburgh, Pittsburgh, Pennsylvania 15260, United States
- Department
of Electrical and Computer Engineering, University of Pittsburgh, Pittsburgh, Pennsylvania 15260, United States
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5
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Shutt RRC, Ramireddy T, Stylianidis E, Di Mino C, Ingle RA, Ing G, Wibowo AA, Nguyen HT, Howard CA, Glushenkov AM, Stewart A, Clancy AJ. Synthesis of Black Phosphorene Quantum Dots from Red Phosphorus. Chemistry 2023; 29:e202301232. [PMID: 37435907 PMCID: PMC10947263 DOI: 10.1002/chem.202301232] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/19/2023] [Revised: 06/06/2023] [Accepted: 07/11/2023] [Indexed: 07/13/2023]
Abstract
Black phosphorene quantum dots (BPQDs) are most commonly derived from high-cost black phosphorus, while previous syntheses from the low-cost red phosphorus (Pred ) allotrope are highly oxidised. Herein, we present an intrinsically scalable method to produce high quality BPQDs, by first ball-milling Pred to create nanocrystalline Pblack and subsequent reductive etching using lithium electride solvated in liquid ammonia. The resultant ~25 nm BPQDs are crystalline with low oxygen content, and spontaneously soluble as individualized monolayers in tertiary amide solvents, as directly imaged by liquid-phase transmission electron microscopy. This new method presents a scalable route to producing quantities of high quality BPQDs for academic and industrial applications.
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Affiliation(s)
- Rebecca R. C. Shutt
- Department of Physics and AstronomyUniversity College LondonLondonWC1E 6BTUK
| | - Thrinathreddy Ramireddy
- Research School of ChemistryThe Australian National UniversityActonACT 2601Australia
- Battery Storage and Grid Integration ProgramThe Australian National UniversityActonACT 2601Australia
| | | | - Camilla Di Mino
- Department of Physics and AstronomyUniversity College LondonLondonWC1E 6BTUK
| | - Rebecca A. Ingle
- Department of ChemistryUniversity College LondonLondonWC1E 6BTUK
| | - Gabriel Ing
- Department of ChemistryUniversity College LondonLondonWC1E 6BTUK
| | - Ary A. Wibowo
- School of EngineeringThe Australian National UniversityActonACT 2601Australia
| | - Hieu T. Nguyen
- School of EngineeringThe Australian National UniversityActonACT 2601Australia
| | | | - Alexey M. Glushenkov
- Research School of ChemistryThe Australian National UniversityActonACT 2601Australia
- Battery Storage and Grid Integration ProgramThe Australian National UniversityActonACT 2601Australia
| | - Andrew Stewart
- Department of ChemistryUniversity College LondonLondonWC1E 6BTUK
| | - Adam J. Clancy
- Department of ChemistryUniversity College LondonLondonWC1E 6BTUK
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6
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Vithanage D, Abu U, Khan Musa MR, Tasnim KJ, Weerahennedige H, Irziqat M, Yu M, Sumanasekera G, Jasinski JB. High-pressure response of vibrational properties of b-As xP 1-x: in situRaman studies. NANOTECHNOLOGY 2023; 34:465704. [PMID: 37567162 DOI: 10.1088/1361-6528/acef28] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/28/2023] [Accepted: 08/10/2023] [Indexed: 08/13/2023]
Abstract
The structural evolution of black arsenic-phosphorous (b-AsxP1-x) alloys with varying arsenic concentrations was investigated under hydrostatic pressure usingin situRaman spectroscopy. High-pressure experiments were conducted using a diamond anvil cell, which revealed pressure-induced shifts in vibrational modes associated with P-P bonds (A1g,A2g,B2g), As-As bonds (A1g,A2g,B2g), and As-P bonds in b-AsxP1-xalloys. Two distinct pressure regimes were observed. In the first regime (region I), all vibrational modes exhibited a monotonic upshift, indicating phonon hardening due to hydrostatic pressure. In the second regime (region II), As0.4P0.6and As0.6P0.4alloys displayed a linear blueshift (or negligible change in some modes) at a reduced rate, suggesting local structural reorganization with less compression on the bonds. Notably, the alloy with the highest As concentration, As0.8P0.2, exhibited anomalous behavior in the second pressure regime, with a downward shift observed in all As-As and As-P Raman modes (and some P-P modes). Interestingly, the emergence of new peaks corresponding to theEgmode andA1gmode of the gray-As phase was observed in this pressure range, indicating compressive strain-induced structural changes. The anomalous change in region II confirms the formation of a new local structure, characterized by elongation of the P-P, As-As, and As-P bonds along the zigzag direction within the b-AsxP1-xphase, possibly near the grain boundary. Additionally, a gray-As phase undergoes compressive structural changes. This study underscores the significance of pressure in inducing structural transformations and exploring novel phases in two-dimensional materials, including b-AsxP1-xalloys.
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Affiliation(s)
- Dinushika Vithanage
- Department of Physics and Astronomy, University of Louisville, Louisville, KY 40292, United States of America
| | - Usman Abu
- Conn Center for Renewable Energy Research, University of Louisville, Louisville, KY 40292, United States of America
| | - Md Rajib Khan Musa
- Department of Physics and Astronomy, University of Louisville, Louisville, KY 40292, United States of America
| | - Kazi Jannatul Tasnim
- Department of Physics and Astronomy, University of Louisville, Louisville, KY 40292, United States of America
| | - Hiruni Weerahennedige
- Department of Physics and Astronomy, University of Louisville, Louisville, KY 40292, United States of America
| | - Mohammed Irziqat
- Department of Physics and Astronomy, University of Louisville, Louisville, KY 40292, United States of America
| | - Ming Yu
- Department of Physics and Astronomy, University of Louisville, Louisville, KY 40292, United States of America
| | - Gamini Sumanasekera
- Department of Physics and Astronomy, University of Louisville, Louisville, KY 40292, United States of America
- Conn Center for Renewable Energy Research, University of Louisville, Louisville, KY 40292, United States of America
| | - Jacek B Jasinski
- Conn Center for Renewable Energy Research, University of Louisville, Louisville, KY 40292, United States of America
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7
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Vacancy-induced tensile strain of CdS/Bi2S3 as a highly performance and robust photocatalyst for hydrogen evolution. J Colloid Interface Sci 2023; 630:224-234. [DOI: 10.1016/j.jcis.2022.10.056] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/02/2022] [Revised: 10/11/2022] [Accepted: 10/13/2022] [Indexed: 11/07/2022]
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8
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Zhang X, Wang L, Su H, Xia X, Liu C, Lyu B, Lin J, Huang M, Cheng Y, Mei JW, Dai JF. Strain Tunability of Perpendicular Magnetic Anisotropy in van der Waals Ferromagnets VI 3. NANO LETTERS 2022; 22:9891-9899. [PMID: 36519735 DOI: 10.1021/acs.nanolett.2c03156] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
Layered ferromagnets with strong magnetic anisotropy energy (MAE) have special applications in nanoscale memory elements in electronic circuits. Here, we report a strain tunability of perpendicular magnetic anisotropy in van der Waals (vdW) ferromagnets VI3 using magnetic circular dichroism measurements. For an unstrained flake, the M-H curve shows a rectangular-shaped hysteresis loop with a large coercivity (1.775 T at 10 K) and remanent magnetization. Furthermore, the coercivity can be enhanced to a maximum of 2.6 T under a 3.8% external in-plane tensile strain. Our DFT calculations show that the increased MAE under strain contributes to the enhancement of coercivity. Meanwhile, the strain tunability on the coercivity of CrI3, with a similar crystal structure, is limited. The main reason is the strong spin-orbit coupling in V3+ in VI6 octahedra in comparison with that in Cr3+. The strain tunability of coercivity in VI3 flakes highlights its potential for integration into vdW heterostructures.
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Affiliation(s)
- Xi Zhang
- Frontiers Science Center for Flexible Electronics (FSCFE), Xi'an Institute of Flexible Electronics (IFE) and Xi'an Institute of Biomedical Materials & Engineering (IBME), Northwestern Polytechnical University, Xi'an 710072, People's Republic of China
- Shenzhen Institute for Quantum Science and Engineering, Southern University of Science and Technology, Shenzhen 518055, People's Republic of China
| | - Le Wang
- Shenzhen Institute for Quantum Science and Engineering, Southern University of Science and Technology, Shenzhen 518055, People's Republic of China
- International Quantum Academy, Shenzhen 518048, People's Republic of China
| | - Huimin Su
- Shenzhen Institute for Quantum Science and Engineering, Southern University of Science and Technology, Shenzhen 518055, People's Republic of China
- International Quantum Academy, Shenzhen 518048, People's Republic of China
| | - Xiuquan Xia
- Shenzhen Institute for Quantum Science and Engineering, Southern University of Science and Technology, Shenzhen 518055, People's Republic of China
| | - Cai Liu
- Shenzhen Institute for Quantum Science and Engineering, Southern University of Science and Technology, Shenzhen 518055, People's Republic of China
- International Quantum Academy, Shenzhen 518048, People's Republic of China
| | - Bingbing Lyu
- Department of Physics, Southern University of Science and Technology, Shenzhen 518055, People's Republic of China
| | - Junhao Lin
- Department of Physics, Southern University of Science and Technology, Shenzhen 518055, People's Republic of China
| | - Mingyuan Huang
- Department of Physics, Southern University of Science and Technology, Shenzhen 518055, People's Republic of China
| | - Yingchun Cheng
- Key Laboratory of Flexible Electronics & Institute of Advanced Materials, Jiangsu National Synergetic Innovation Center for Advanced Materials, Nanjing Tech University, Nanjing 211816, People's Republic of China
| | - Jia-Wei Mei
- Department of Physics, Southern University of Science and Technology, Shenzhen 518055, People's Republic of China
- Shenzhen Key Laboratory of Advanced Quantum Functional Materials and Devices, Southern University of Science and Technology, Shenzhen 518055, People's Republic of China
| | - Jun-Feng Dai
- Shenzhen Institute for Quantum Science and Engineering, Southern University of Science and Technology, Shenzhen 518055, People's Republic of China
- International Quantum Academy, Shenzhen 518048, People's Republic of China
- Shenzhen Key Laboratory of Quantum Science and Engineering, Shenzhen 518055, People's Republic of China
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9
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Synergy of heterojunction and interfacial strain for boosting photocatalytic H 2 evolution of black phosphorus nanosheets. J Colloid Interface Sci 2022; 627:969-977. [PMID: 35905583 DOI: 10.1016/j.jcis.2022.07.097] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/08/2022] [Revised: 07/09/2022] [Accepted: 07/17/2022] [Indexed: 11/22/2022]
Abstract
As an emerging post-graphene two-dimensional material, black phosphorus (BP) has attracted enormous interest as a promising cocatalyst for photocatalytic hydrogen (H2) evolution, however, the activity of either pristine bulk or BP nanosheets is far from satisfactory. Herein, we present an effective strategy to greatly boost the H2 evolution performance of BP via applying the synergistic effect of heterojunction and interfacial lattice strain. A multilayered heterostructure coupling BP nanosheets and nickel oxide (NiO) nanosheets with abundant interface P-Ni and PO bonds is synthesized and utilized as a proof-of-concept material for our design. Both the experimental and theoretical results have revealed that the strain is formed in BP-NiO multilayered heterostructure. The generated lattice strain induces the charge redistribution at the interface between BP and NiO, which leads to the improved electron transfer efficiency and favorable H* adsorption kinetics for photocatalytic H2 evolution reaction. As a result, the BP-NiO heterostructure with strain effect exhibits much enhanced photocatalytic H2 evolution activity in the presence of Eosin Y (EY) as photosensitizer, exceeding that of zero-strained BP/NiO heterostructure and many other reported noble-metal-free cocatalyst.
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10
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Asakuma N, Tada S, Kawaguchi E, Terashima M, Honda S, Nishihora RK, Carles P, Bernard S, Iwamoto Y. Mechanistic Investigation of the Formation of Nickel Nanocrystallites Embedded in Amorphous Silicon Nitride Nanocomposites. NANOMATERIALS 2022; 12:nano12101644. [PMID: 35630866 PMCID: PMC9145008 DOI: 10.3390/nano12101644] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 04/11/2022] [Revised: 05/02/2022] [Accepted: 05/10/2022] [Indexed: 01/10/2023]
Abstract
Herein, we report the mechanistic investigation of the formation of nickel (Ni) nanocrystallites during the formation of amorphous silicon nitride at a temperature as low as 400 °C, using perhydropolysilazane (PHPS) as a preformed precursor and further coordinated by nickel chloride (NiCl2); thus, forming the non-noble transition metal (TM) as a potential catalyst and the support in an one-step process. It was demonstrated that NiCl2 catalyzed dehydrocoupling reactions between Si-H and N-H bonds in PHPS to afford ternary silylamino groups, which resulted in the formation of a nanocomposite precursor via complex formation: Ni(II) cation of NiCl2 coordinated the ternary silylamino ligands formed in situ. By monitoring intrinsic chemical reactions during the precursor pyrolysis under inert gas atmosphere, it was revealed that the Ni-N bond formed by a nucleophilic attack of the N atom on the Ni(II) cation center, followed by Ni nucleation below 300 °C, which was promoted by the decomposition of Ni nitride species. The latter was facilitated under the hydrogen-containing atmosphere generated by the NiCl2-catalyzed dehydrocoupling reaction. The increase of the temperature to 400 °C led to the formation of a covalently-bonded amorphous Si3N4 matrix surrounding Ni nanocrystallites.
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Affiliation(s)
- Norifumi Asakuma
- Department of Life Science and Applied Chemistry, Graduated School of Engineering, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466-8555, Japan; (N.A.); (S.T.); (E.K.); (M.T.); (S.H.)
| | - Shotaro Tada
- Department of Life Science and Applied Chemistry, Graduated School of Engineering, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466-8555, Japan; (N.A.); (S.T.); (E.K.); (M.T.); (S.H.)
| | - Erika Kawaguchi
- Department of Life Science and Applied Chemistry, Graduated School of Engineering, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466-8555, Japan; (N.A.); (S.T.); (E.K.); (M.T.); (S.H.)
| | - Motoharu Terashima
- Department of Life Science and Applied Chemistry, Graduated School of Engineering, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466-8555, Japan; (N.A.); (S.T.); (E.K.); (M.T.); (S.H.)
| | - Sawao Honda
- Department of Life Science and Applied Chemistry, Graduated School of Engineering, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466-8555, Japan; (N.A.); (S.T.); (E.K.); (M.T.); (S.H.)
| | - Rafael Kenji Nishihora
- CNRS, IRCER, UMR 7315, University of Limoges, F-87000 Limoges, France; (R.K.N.); (P.C.); (S.B.)
| | - Pierre Carles
- CNRS, IRCER, UMR 7315, University of Limoges, F-87000 Limoges, France; (R.K.N.); (P.C.); (S.B.)
| | - Samuel Bernard
- CNRS, IRCER, UMR 7315, University of Limoges, F-87000 Limoges, France; (R.K.N.); (P.C.); (S.B.)
| | - Yuji Iwamoto
- Department of Life Science and Applied Chemistry, Graduated School of Engineering, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466-8555, Japan; (N.A.); (S.T.); (E.K.); (M.T.); (S.H.)
- Correspondence:
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11
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Das S, Debnath K, Chakraborty B, Singh A, Grover S, Muthu DVS, Waghmare UV, Sood AK. Symmetry induced phonon renormalization in few layers of 2H-MoTe 2 transistors: Raman and first-principles studies. NANOTECHNOLOGY 2021; 32:045202. [PMID: 33036010 DOI: 10.1088/1361-6528/abbfd6] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Understanding of electron-phonon coupling (EPC) in two-dimensional (2D) materials manifesting as phonon renormalization is essential to their possible applications in nanoelectronics. Here we report in situ Raman measurements of electrochemically top-gated 2, 3 and 7 layered 2H-MoTe2 channel based field-effect transistors. While the [Formula: see text] and B2g phonon modes exhibit frequency softening and linewidth broadening with hole doping concentration (p) up to ∼2.3 × 1013/cm2, A1g shows relatively small frequency hardening and linewidth sharpening. The dependence of frequency renormalization of the [Formula: see text] mode on the number of layers in these 2D crystals confirms that hole doping occurs primarily in the top two layers, in agreement with recent predictions. We present first-principles density functional theory analysis of bilayer MoTe2 that qualitatively captures our observations, and explain that a relatively stronger coupling of holes with [Formula: see text] or B2g modes as compared with the A1g mode originates from the in-plane orbital character and symmetry of the states at valence band maximum. The contrast between the manifestation of EPC in monolayer MoS2 and those observed here in a few-layered MoTe2 demonstrates the role of the symmetry of phonons and electronic states in determining the EPC in these isostructural systems.
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Affiliation(s)
- Subhadip Das
- Department of Physics, Indian Institute of Science, Bangalore 560012, India
| | - Koyendrila Debnath
- Theoretical Sciences Unit, Jawaharlal Nehru Centre for Advanced Scientific Research, Bangalore-560064, India
| | | | - Anjali Singh
- Center for Study of Science, Technology & Policy (CSTEP), Bangalore 560094, India
| | - Shivani Grover
- Theoretical Sciences Unit, Jawaharlal Nehru Centre for Advanced Scientific Research, Bangalore-560064, India
| | - D V S Muthu
- Department of Physics, Indian Institute of Science, Bangalore 560012, India
| | - U V Waghmare
- Theoretical Sciences Unit, Jawaharlal Nehru Centre for Advanced Scientific Research, Bangalore-560064, India
| | - A K Sood
- Department of Physics, Indian Institute of Science, Bangalore 560012, India
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