Strain-free GeSn nanomembranes enabled by transfer-printing techniques for advanced optoelectronic applications

Nanomembranes-Affiliated Water Remediation: Chronology, Properties, Classification, Challenges and Future Prospects

Water contamination has become a global crisis, affecting millions of people worldwide and causing diseases and illnesses, including cholera, typhoid, and hepatitis A. Conventional water remediation methods have several challenges, including their inability to remove emerging contaminants and their high cost and environmental impact. Nanomembranes offer a promising solution to these challenges. Nanomembranes are thin, selectively permeable membranes that can remove contaminants from water based on size, charge, and other properties. They offer several advantages over conventional methods, including their ability to remove evolving pollutants, low functioning price, and reduced ecological influence. However, there are numerous limitations linked with the applications of nanomembranes in water remediation, including fouling and scaling, cost-effectiveness, and potential environmental impact. Researchers are working to reduce the cost of nanomembranes through the development of more cost-effective manufacturing methods and the use of alternative materials such as graphene. Additionally, there are concerns about the release of nanomaterials into the environment during the manufacturing and disposal of the membranes, and further research is needed to understand their potential impact. Despite these challenges, nanomembranes offer a promising solution for the global water crisis and could have a significant impact on public health and the environment. The current article delivers an overview on the exploitation of various engineered nanoscale substances, encompassing the carbonaceous nanomaterials, metallic, metal oxide and metal-organic frameworks, polymeric nano-adsorbents and nanomembranes, for water remediation. The article emphasizes the mechanisms involved in adsorption and nanomembrane filtration. Additionally, the authors aim to deliver an all-inclusive review on the chronology, technical execution, challenges, restrictions, reusability, and future prospects of these nanomaterials.

Transfer-printing-enabled GeSn flexible resonant-cavity-enhanced photodetectors with strain-amplified mid-infrared optical responses

Mid-infrared (MIR) flexible photodetectors (FPDs) constitute an essential element for wearable applications, including health-care monitoring and biomedical detection. Compared with organic materials, inorganic semiconductors are promising candidates for FPDs owing to their superior performance as well as optoelectronic properties. Herein, for the first time, we present the use of transfer-printing techniques to enable a cost-effective, nontoxic GeSn MIR resonant-cavity-enhanced FPDs (RCE-FPDs) with strain-amplified optical responses. A narrow bandgap nontoxic GeSn nanomembrane was employed as the active layer, which was grown on a silicon-on-insulator substrate and then transfer-printed onto a polyethylene terephthalate (PET) substrate, eliminating the unwanted defects and residual compressive strain, to yield the MIR RCE-FPDs. In addition, a vertical cavity was created for the GeSn active layer to enhance the optical responsivity. Under bending conditions, significant tensile strain up to 0.274% was introduced into the GeSn active layer to effectively modulate the band structure, extend the photodetection in the MIR region, and substantially enhance the optical responsivity to 0.292 A W^-1 at λ = 1770 nm, corresponding to an enhancement of 323% compared with the device under flat conditions. Moreover, theoretical simulations were performed to confirm the strain effect on the device performance. The results demonstrated high-performance, nontoxic MIR RCE-FPDs for applications in flexible photodetection.

Improved Tunneling Property of p+Si Nanomembrane/n+GaAs Heterostructures through Ultraviolet/Ozone Interface Treatment

Here, heterostructures composed of p+Si nanomembranes (NM)/n+GaAs were fabricated by ultraviolet/ozone (UV/O3, UVO) treatment, and their tunneling properties were investigated. The hydrogen (H)-terminated Si NM was bonded to the oxygen (O)-terminated GaAs substrate, leading to Si/GaAs tunnel junctions (TJs). The atomic-scale features of the H-O-terminated Si/GaAs TJ were analyzed and compared to those of Si/GaAs heterojunctions with no UVO treatment. The electrical characteristics demonstrated the emergence of negative differential resistance, with an average peak-to-valley current ratio of 3.49, which was examined based on the band-to-band tunneling and thermionic emission theories.

Impact of strain engineering and Sn content on GeSn heterostructured nanomaterials for nanoelectronics and photonic devices

Heterostructures based on the GeSn nanocompound have high impact on integrated photonics devices. The promising feature of GeSn nanostructures is its direct bandgap transition that is a result of Sn incorporation in the Ge networks, forming a strained structure. Herein, we demonstrate a deep survey of the strain-controlling mechanisms in GeSn nanomaterials with different methodologies. Using either layer configurations, Sn incorporation, or by external stressors, the emission of different photonic and nanoelectronic applications is controlled. We find that strain engineering modulates the bandgap of GeSn active media to control the region of emission for light emitting diodes, lasing applications, and spectral response for photodetection applications within the mid-IR region of the spectrum and enhances the performance of MOSFETs. This gives GeSn nanocompounds the chance to contribute greatly to IoT physical devices and compete with unstable perovskite materials since GeSn materials can achieve a stable and more reliable performance.

Raman scattering study of GeSn under 〈1 0 0〉 and 〈1 1 0〉 uniaxial stress

The application of strain into GeSn alloys can effectively modulate the band structures, thus creating novel electronic and photonic devices. Raman spectroscopy is a powerful tool for characterizing strain; however, the lack of Raman coefficient makes it difficult for accurate determination of strain in GeSn alloys. Here, we have investigated the Raman-strain function of Ge_1-xSn_xalong 〈1 0 0〉 and 〈1 1 0〉 directions. GeSn nanomembranes (NMs) with different Sn compositions are transfer-printed on polyethylene terephthalate substrates. External strain is introduced by bending fixtures with different radii, leading to uniaxial tensile strain up to 0.44%. Strain analysis of flexible GeSn NMs bent along 〈1 0 0〉 and 〈1 1 0〉 directions are performed by Raman spectroscopy. The linear coefficients of Raman-strain for Ge_0.96Sn_0.04are measured to be -1.81 and -2.60 cm^-1, while those of Ge_0.94Sn_0.06are decreased to be -2.69 and -3.82 cm^-1along 〈1 0 0〉 and 〈1 1 0〉 directions, respectively. As a result, the experimental ratio of linear coefficient (ROLC) of Ge, Ge_0.96Sn_0.04and Ge_0.94Sn_0.06are 1.34, 1.44 and 1.42, which agree well with theoretical ROLC values calculated by elastic compliances and phonon deformation potentials (PDPs). In addition, the compositional dependence of PDPs is analyzed qualitatively. These fundamental parameters are important in designing high performance strained GeSn electronic and photonic devices.