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Wu G, Xiang L, Wang W, Yao C, Yan Z, Zhang C, Wu J, Liu Y, Zheng B, Liu H, Hu C, Sun X, Zhu C, Wang Y, Xiong X, Wu Y, Gao L, Li D, Pan A, Li S. Hierarchical processing enabled by 2D ferroelectric semiconductor transistor for low-power and high-efficiency AI vision system. Sci Bull (Beijing) 2024; 69:473-482. [PMID: 38123429 DOI: 10.1016/j.scib.2023.12.027] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/05/2023] [Revised: 11/23/2023] [Accepted: 12/04/2023] [Indexed: 12/23/2023]
Abstract
The growth of data and Internet of Things challenges traditional hardware, which encounters efficiency and power issues owing to separate functional units for sensors, memory, and computation. In this study, we designed an α-phase indium selenide (α-In2Se3) transistor, which is a two-dimensional ferroelectric semiconductor as the channel material, to create artificial optic-neural and electro-neural synapses, enabling cutting-edge processing-in-sensor (PIS) and computing-in-memory (CIM) functionalities. As an optic-neural synapse for low-level sensory processing, the α-In2Se3 transistor exhibits a high photoresponsivity (2855 A/W) and detectivity (2.91 × 1014 Jones), facilitating efficient feature extraction. For high-level processing tasks as an electro-neural synapse, it offers a fast program/erase speed of 40 ns/50 µs and ultralow energy consumption of 0.37 aJ/spike. An AI vision system using α-In2Se3 transistors has been demonstrated. It achieved an impressive recognition accuracy of 92.63% within 12 epochs owing to the synergistic combination of the PIS and CIM functionalities. This study demonstrates the potential of the α-In2Se3 transistor in future vision hardware, enhancing processing, power efficiency, and AI applications.
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Affiliation(s)
- Guangcheng Wu
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Materials Science and Engineering, Hunan University, Changsha 410082, China; Hunan Institute of Optoelectronic Integration, Hunan University, Changsha 410082, China
| | - Li Xiang
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Materials Science and Engineering, Hunan University, Changsha 410082, China; Hunan Institute of Optoelectronic Integration, Hunan University, Changsha 410082, China
| | - Wenqiang Wang
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Materials Science and Engineering, Hunan University, Changsha 410082, China; Hunan Institute of Optoelectronic Integration, Hunan University, Changsha 410082, China
| | - Chengdong Yao
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Materials Science and Engineering, Hunan University, Changsha 410082, China; Hunan Institute of Optoelectronic Integration, Hunan University, Changsha 410082, China
| | - Zeyi Yan
- Hunan Institute of Advanced Sensing and Information Technology, Xiangtan University, Xiangtan 411105, China
| | - Cheng Zhang
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Materials Science and Engineering, Hunan University, Changsha 410082, China; Hunan Institute of Optoelectronic Integration, Hunan University, Changsha 410082, China
| | - Jiaxin Wu
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Materials Science and Engineering, Hunan University, Changsha 410082, China; Hunan Institute of Optoelectronic Integration, Hunan University, Changsha 410082, China
| | - Yong Liu
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Materials Science and Engineering, Hunan University, Changsha 410082, China; Hunan Institute of Optoelectronic Integration, Hunan University, Changsha 410082, China
| | - Biyuan Zheng
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Materials Science and Engineering, Hunan University, Changsha 410082, China; Hunan Institute of Optoelectronic Integration, Hunan University, Changsha 410082, China
| | - Huawei Liu
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Materials Science and Engineering, Hunan University, Changsha 410082, China; Hunan Institute of Optoelectronic Integration, Hunan University, Changsha 410082, China
| | - Chengwei Hu
- Hunan Institute of Advanced Sensing and Information Technology, Xiangtan University, Xiangtan 411105, China
| | - Xingxia Sun
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Materials Science and Engineering, Hunan University, Changsha 410082, China; Hunan Institute of Optoelectronic Integration, Hunan University, Changsha 410082, China
| | - Chenguang Zhu
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Materials Science and Engineering, Hunan University, Changsha 410082, China; Hunan Institute of Optoelectronic Integration, Hunan University, Changsha 410082, China
| | - Yizhe Wang
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Materials Science and Engineering, Hunan University, Changsha 410082, China; Hunan Institute of Optoelectronic Integration, Hunan University, Changsha 410082, China
| | - Xiong Xiong
- School of Integrated Circuits, Peking University, Beijing 100871, China
| | - Yanqing Wu
- Hunan Institute of Advanced Sensing and Information Technology, Xiangtan University, Xiangtan 411105, China; School of Integrated Circuits, Peking University, Beijing 100871, China
| | - Liang Gao
- Wuhan National Laboratory for Optoelectronics (WNLO), Huazhong University of Science and Technology (HUST), Wuhan 430074, China
| | - Dong Li
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Materials Science and Engineering, Hunan University, Changsha 410082, China; Hunan Institute of Optoelectronic Integration, Hunan University, Changsha 410082, China.
| | - Anlian Pan
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Materials Science and Engineering, Hunan University, Changsha 410082, China; Hunan Institute of Optoelectronic Integration, Hunan University, Changsha 410082, China.
| | - Shengman Li
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Materials Science and Engineering, Hunan University, Changsha 410082, China; Hunan Institute of Optoelectronic Integration, Hunan University, Changsha 410082, China.
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2
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Yu Y, Peng M, Zhong F, Wang Z, Ge X, Chen H, Guo J, Wang Y, Chen Y, Xu T, Zhao T, He T, Zhang K, Wu F, Chen C, Dai J, Hu W. Synergistic effects of extrinsic photoconduction and photogating in a short-wavelength ZrS 3 infrared photodetector. MATERIALS HORIZONS 2023. [PMID: 37092183 DOI: 10.1039/d2mh01495e] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/03/2023]
Abstract
Two-dimensional (2D) material-based photodetectors, especially those working in the infrared band, have shown great application potential in the thermal imaging, optical communication, and medicine fields. Designing 2D material photodetectors with broadened detection band and enhanced responsivity has become an attractive but challenging research direction. To solve this issue, we report a zirconium trisulfide (ZrS3) infrared photodetector with enhanced and broadened response with the assistance of the synergistic effects of extrinsic photoconduction and photogating effect. The ZrS3 photodetectors can detect infrared light up to 2 μm by extrinsic photoconduction and exhibit a responsivity of 100 mA W-1 under 1550 nm illumination. Furthermore, the ZrS3 infrared photodetectors with an oxide layer show a triple enhanced responsivity due to the photogating effect. Additionally, the infrared imaging capability of the ZrS3 infrared photodetectors is also demonstrated. This work provides a potential way to extend the response range and improve the responsivity for nanomaterial-based photodetectors at the same time.
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Affiliation(s)
- Yiye Yu
- Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074, China.
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
| | - Meng Peng
- Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074, China.
| | - Fang Zhong
- Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou 310024, China.
| | - Zhen Wang
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
| | - Xun Ge
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
| | - Hao Chen
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
| | - Jiaxiang Guo
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
| | - Yang Wang
- Fudan University, Shanghai 200433, China
| | - Yue Chen
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
| | - Tengfei Xu
- Fudan University, Shanghai 200433, China
| | - Tiange Zhao
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
- Sun Yat-Sen University, Guangzhou 510275, China
| | - Ting He
- Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou 310024, China.
| | - Kun Zhang
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
| | - Feng Wu
- Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074, China.
| | - Changqing Chen
- Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074, China.
| | - Jiangnan Dai
- Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074, China.
| | - Weida Hu
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
- Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou 310024, China.
- University of Chinese Academy of Sciences, Beijing 100049, China
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3
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He Q, Tang Z, Dai M, Shan H, Yang H, Zhang Y, Luo X. Epitaxial Growth of Large Area Two-Dimensional Ferroelectric α-In 2Se 3. NANO LETTERS 2023; 23:3098-3105. [PMID: 36779554 DOI: 10.1021/acs.nanolett.2c04289] [Citation(s) in RCA: 5] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
Two-dimensional (2D) ferroelectric materials have attracted intensive attention in recent years for academic research. However, the synthesis of large-scale 2D ferroelectric materials for electronic applications is still challenging. Here, we report the successful synthesis of centimeter-scale ferroelectric In2Se3 films by selenization of In2O3 in a confined space chemical vapor deposition method. The as-grown homogeneous thin film has a uniform thickness of 5 nm with robust out-of-plane ferroelectricity at room temperature. Scanning transmission electron microscopy and Raman spectroscopy reveal that the thin film is 2H stacking α-In2Se3 with excellent crystalline quality. Electronic transport measurements of In2Se3 highlight the current-voltage hysteresis and polarization modulated diode effect due to the switchable Schottky barrier height (SBH). First-principles calculations reveal that the polarization modulated SBH is originated from the competition between interface charge transfer and polarized charge. The large area growth of epitaxial In2Se3 opens up potential applications of In2Se3 in novel nanoelectronics.
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Affiliation(s)
- Qinming He
- Guangdong Provincial Key Laboratory of Magnetoelectric Physics and Devices, School of Physics, Sun Yat-sen University, Guangzhou 510275, China
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics, Sun Yat-sen University, Guangzhou 510275, China
- Centre for Physical Mechanics and Biophysics, School of Physics, Sun Yat-sen University, Guangzhou 510275, China
| | - Zhiyuan Tang
- Guangdong Provincial Key Laboratory of Magnetoelectric Physics and Devices, School of Physics, Sun Yat-sen University, Guangzhou 510275, China
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics, Sun Yat-sen University, Guangzhou 510275, China
- Centre for Physical Mechanics and Biophysics, School of Physics, Sun Yat-sen University, Guangzhou 510275, China
| | - Minzhi Dai
- Guangdong Provincial Key Laboratory of Magnetoelectric Physics and Devices, School of Physics, Sun Yat-sen University, Guangzhou 510275, China
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics, Sun Yat-sen University, Guangzhou 510275, China
- Centre for Physical Mechanics and Biophysics, School of Physics, Sun Yat-sen University, Guangzhou 510275, China
| | - Huili Shan
- Guangdong Provincial Key Laboratory of Magnetoelectric Physics and Devices, School of Physics, Sun Yat-sen University, Guangzhou 510275, China
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics, Sun Yat-sen University, Guangzhou 510275, China
- Centre for Physical Mechanics and Biophysics, School of Physics, Sun Yat-sen University, Guangzhou 510275, China
| | - Hui Yang
- Guangdong Provincial Key Laboratory of Magnetoelectric Physics and Devices, School of Physics, Sun Yat-sen University, Guangzhou 510275, China
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics, Sun Yat-sen University, Guangzhou 510275, China
- Centre for Physical Mechanics and Biophysics, School of Physics, Sun Yat-sen University, Guangzhou 510275, China
| | - Yi Zhang
- Guangdong Provincial Key Laboratory of Magnetoelectric Physics and Devices, School of Physics, Sun Yat-sen University, Guangzhou 510275, China
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics, Sun Yat-sen University, Guangzhou 510275, China
- Centre for Physical Mechanics and Biophysics, School of Physics, Sun Yat-sen University, Guangzhou 510275, China
| | - Xin Luo
- Guangdong Provincial Key Laboratory of Magnetoelectric Physics and Devices, School of Physics, Sun Yat-sen University, Guangzhou 510275, China
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics, Sun Yat-sen University, Guangzhou 510275, China
- Centre for Physical Mechanics and Biophysics, School of Physics, Sun Yat-sen University, Guangzhou 510275, China
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4
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Bangolla HK, Siao MD, Huang YH, Chen RS, Žukauskaitė A, Palisaitis J, Persson POÅ, Hultman L, Birch J, Hsiao CL. Composition-dependent photoconductivities in indium aluminium nitride nanorods grown by magnetron sputter epitaxy. NANOSCALE ADVANCES 2022; 4:4886-4894. [PMID: 36381504 PMCID: PMC9642355 DOI: 10.1039/d2na00456a] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 07/15/2022] [Accepted: 09/29/2022] [Indexed: 06/16/2023]
Abstract
Photoconduction (PC) properties were investigated for ternary indium aluminium nitride (In x Al1-x N) nanorods (NRs) with different indium compositions (x) from 0.35 to 0.68, as grown by direct-current reactive magnetron sputter epitaxy. Cross-sectional scanning transmission electron microscopy (STEM) reveals single-crystal quality of the vertically aligned In x Al1-x N NRs. Single-rod photodetector devices with good ohmic contacts were fabricated using the focused-ion-beam technique (FIB), where the In-rich In0.68Al0.32N NR exhibits an optimal photocurrent responsivity of 1400 A W-1 and photoconductive gain of 3300. A transition from a positive photoresponse to a negative photoresponse was observed, while increasing the In composition x from 0.35 to 0.57. The negative PC was further enhanced by increasing x to 0.68. A model based on the coexistence and competition of deep electron trap states and recombination centers was proposed to explain the interesting composition-dependent PC in these ternary III-nitride 1D nanostructures.
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Affiliation(s)
- Hemanth Kumar Bangolla
- Graduate Institute of Applied Science and Technology, National Taiwan University of Science and Technology Taipei 10607 Taiwan
| | - Ming-Deng Siao
- Graduate Institute of Applied Science and Technology, National Taiwan University of Science and Technology Taipei 10607 Taiwan
| | - Yi-Hua Huang
- Graduate Institute of Applied Science and Technology, National Taiwan University of Science and Technology Taipei 10607 Taiwan
| | - Ruei-San Chen
- Graduate Institute of Applied Science and Technology, National Taiwan University of Science and Technology Taipei 10607 Taiwan
| | - Agnė Žukauskaitė
- Fraunhofer Institute for Organic Electronics, Electron Beam and Plasma Technology FEP Dresden 01277 Germany
| | - Justinas Palisaitis
- Thin Film Physics Division, Department of Physics, Chemistry, and Biology (IFM), Linköping University Linköping SE-581 83 Sweden
| | - Per O Å Persson
- Thin Film Physics Division, Department of Physics, Chemistry, and Biology (IFM), Linköping University Linköping SE-581 83 Sweden
| | - Lars Hultman
- Thin Film Physics Division, Department of Physics, Chemistry, and Biology (IFM), Linköping University Linköping SE-581 83 Sweden
| | - Jens Birch
- Thin Film Physics Division, Department of Physics, Chemistry, and Biology (IFM), Linköping University Linköping SE-581 83 Sweden
| | - Ching-Lien Hsiao
- Thin Film Physics Division, Department of Physics, Chemistry, and Biology (IFM), Linköping University Linköping SE-581 83 Sweden
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5
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Hase Y, Jadhav Y, Aher R, Sharma V, Shah S, Punde A, Waghmare A, Doiphode V, Shinde P, Rahane S, Vairale P, Bade B, Prasad M, Rondiya S, Rokade A, Jadkar S. Annealing temperature effect on structural and optoelectronic properties of γ-In2Se3 thin films towards highly stable photodetector applications. J Mol Struct 2022. [DOI: 10.1016/j.molstruc.2022.133336] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/18/2022]
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6
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Dai C, Liu Y, Wei D. Two-Dimensional Field-Effect Transistor Sensors: The Road toward Commercialization. Chem Rev 2022; 122:10319-10392. [PMID: 35412802 DOI: 10.1021/acs.chemrev.1c00924] [Citation(s) in RCA: 57] [Impact Index Per Article: 28.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/07/2023]
Abstract
The evolutionary success in information technology has been sustained by the rapid growth of sensor technology. Recently, advances in sensor technology have promoted the ambitious requirement to build intelligent systems that can be controlled by external stimuli along with independent operation, adaptivity, and low energy expenditure. Among various sensing techniques, field-effect transistors (FETs) with channels made of two-dimensional (2D) materials attract increasing attention for advantages such as label-free detection, fast response, easy operation, and capability of integration. With atomic thickness, 2D materials restrict the carrier flow within the material surface and expose it directly to the external environment, leading to efficient signal acquisition and conversion. This review summarizes the latest advances of 2D-materials-based FET (2D FET) sensors in a comprehensive manner that contains the material, operating principles, fabrication technologies, proof-of-concept applications, and prototypes. First, a brief description of the background and fundamentals is provided. The subsequent contents summarize physical, chemical, and biological 2D FET sensors and their applications. Then, we highlight the challenges of their commercialization and discuss corresponding solution techniques. The following section presents a systematic survey of recent progress in developing commercial prototypes. Lastly, we summarize the long-standing efforts and prospective future development of 2D FET-based sensing systems toward commercialization.
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Affiliation(s)
- Changhao Dai
- State Key Laboratory of Molecular Engineering of Polymers, Department of Macromolecular Science, Fudan University, Shanghai 200433, China.,Laboratory of Molecular Materials and Devices, Fudan University, Shanghai 200433, China
| | - Yunqi Liu
- Laboratory of Molecular Materials and Devices, Fudan University, Shanghai 200433, China
| | - Dacheng Wei
- State Key Laboratory of Molecular Engineering of Polymers, Department of Macromolecular Science, Fudan University, Shanghai 200433, China.,Laboratory of Molecular Materials and Devices, Fudan University, Shanghai 200433, China
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7
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Mukherjee S, Koren E. Indium Selenide (In
2
Se
3
) – An Emerging Van‐der‐Waals Material for Photodetection and Non‐Volatile Memory Applications. Isr J Chem 2022. [DOI: 10.1002/ijch.202100112] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/11/2022]
Affiliation(s)
- Subhrajit Mukherjee
- Nanoscale Electronic Materials & Devices Laboratory, Faculty of Materials Science and Engineering, Technion – Israel Institute of Technology 3200003 Haifa Israel
| | - Elad Koren
- Nanoscale Electronic Materials & Devices Laboratory, Faculty of Materials Science and Engineering, Technion – Israel Institute of Technology 3200003 Haifa Israel
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