Ultrahigh hydrogen storage capacity of holey graphyne

Lithium-grafted Si-doped γ-graphyne as a reversible hydrogen storage host material

In recent years, hydrogen (H2) has become the most sought-after sustainable energy carrier by virtue of its high energy content and carbon-free emission. The practical implementation of hydrogen as an alternative fuel calls for an efficient and secure storage medium. Within this framework, we have investigated Li-grafted Si-doped γ-graphyne for H2 storage applications by implementing the cutting-edge density functional theory (DFT). A dynamically and thermally stable Si-doped γ-graphyne (SiG) monolayer is functionalized with Li metal atoms that augmented the hydrogen binding strength of the nanolayer by almost three times, owing to the polarization effect of the Li atoms. The Li metal atoms get adsorbed over the monolayer, allowing a binding energy of -2.73 eV that is greater than the Li cohesive energy (-1.63 eV), which eliminates the metal-metal clustering probability. The reliability of the Li-functionalized SiG monolayer (Li8SiG) at elevated temperature has been further substantiated by performing and analyzing ab initio molecular dynamics (AIMD) simulations at 400 K. It is noteworthy that a total of four H2 molecules are held up by each Li atom with an average adsorption energy of -0.32 eV and a maximum gravimetric capacity of 8.48 wt%, which remarkably follows the US-DOE parameters. Partial density of states and Hirshfeld charge analysis are utilized to recognize the interaction channel which reveals the Kubas and Niu-Rao-Jena-like bonding among the metal atoms and loaded hydrogen molecules. The hydrogen occupancy calculated at different temperatures and pressures indicates that hydrogen molecules can be reversibly stored over the Li8SiG system, and it is noted that adsorbed H2 begins to desorb at 280 K, with complete desorption at 400 K and 20 atm (or lower). AIMD simulations are further performed to authenticate the H2 desorption at various temperatures, which agrees well with the occupation number analysis. All the outcomes advocate for efficient reversible hydrogen storage over the proposed host material.

Prediction of a novel 2D porous boron nitride material with excellent electronic, optical and catalytic properties

Holey graphyne (HGY) is a recently synthesized two-dimensional semiconducting allotrope of carbon composed of a regular pattern of six- and eight-vertex carbon rings. In this study, based on first-principles density functional theory and molecular dynamics simulations, we predict a similar stable porous boron nitride holey graphyne-like structure that we call BN-holey-graphyne (BN-HGY). The dynamical and thermal stability of the structure at room temperature is confirmed by performing calculations of the phonon dispersion relations, and also ab initio molecular dynamics simulations. The BN-HGY structure has a wide direct band gap of 5.18 eV, which can be controllably tuned by substituting carbon, aluminum, silicon, and phosphorus atoms in place of sp and sp² hybridized boron and nitrogen atoms of BN-HGY. We have also calculated the optical properties of the HGY and BN-HGY structures for the first time and found that the optical absorption spectra of these structures span the full visible region and a wide range of the ultraviolet region. We found that the Gibbs free energy of the BN-HGY structure for the hydrogen adsorption process is very close to zero (-0.04 eV) and, therefore, the BN-HGY structure can be utilized as a potential catalyst for the HER. Therefore, we propose that the boron nitride analog of holey graphyne can be synthesized, and it has a wide range of applications in nanoelectronics, optoelectronics, spintronics, ultraviolet lasers, and solar cell devices.

Catechol sensor based on pristine and transition metal embedded holey graphyne: a first-principles density functional theory study

To develop a highly sensitive and selective biosensor for detecting noxious biomolecules from the environment, we examined catechol (Cc) adsorption in pristine and transition metal (TM = Sc, Cu, and Pd) embedded 2D holey graphyne (hGY) monolayers using the first-principles density functional theory method. The interaction between Cc and the pristine hGY is purely weak, and hence the response of the sensing device will be difficult to detect. Therefore, the TM doping strategy is adopted to improve the sensitivity. According to our findings, Sc binds strongly to the hGY monolayer, with a binding energy of -4.09 eV and a charge transfer of 1.89e from the valence orbitals of Sc to the C 2p orbitals. Later on, the Cc adsorption on the TM-embedded hGY was investigated. The interaction of Cc with the transition metal involves charge transfer from Cc to the metal d orbital. A large binding energy of -3.22 eV and a significant charge transfer of about 0.9e from the O 2p orbitals of Cc to the valence orbital of Sc suggest that the Sc embedded hGY monolayer is a good choice for the efficient sensing of Cc molecules. Furthermore, ab initio MD simulations confirmed the structural stability of the Sc + hGY system at room temperature. We strongly believe that this theoretical work will aid the experimentalists in designing and developing 2D semiconducting nanolayer-based biosensors for commercial purposes.

AnAb-initiostudy of the Y decorated 2D holey graphyne for hydrogen storage application

Expanding pollution and rapid consumption of natural reservoirs (gas, oil, and coal) led humankind to explore alternative energy fuels like hydrogen fuel. Solid-state hydrogen storage is most desirable because of its usefulness in the onboard vehicle. In this work, we explored the yttrium decorated ultra porous, two-dimensional holey-graphyne for hydrogen storage. Using the first principles density functional theory simulations, we predict that yttrium doped holey graphyne can adsorb up to seven hydrogen molecules per yttrium atom resulting in a gravimetric hydrogen weight percentage of 9.34, higher than the target of 6.5 wt% set by the US Department of Energy. The average binding energy per H₂and desorption temperature come out to be -0.34 eV and ∼438 K, respectively. Yttrium atom is bonded strongly on HGY sheet due to charge transfer from Y 4d orbital to C 2p orbital whereas the adsorption of H₂molecule on Y is due to Kubas-type of interactions involving charge donation from H 1s orbital to Y 3d orbital and back donation with net charge gain by H 1s orbital. Furthermore, sufficient energy barriers for the metal atom diffusion have been found to prevent the clustering of transition metal (yttrium) on HGY sheet. The stability of the system at higher temperatures is analyzed usingAb-initiomolecular dynamics (AIMD) method, and the system is found to be stable at room and the highest desorption temperature. Stability of the system at higher temperatures, presence of adequate diffusion energy barrier to prevent metal-metal clustering, high gravimetric wt% of H₂uptake with suitable binding energy, and desorption temperature signifies that Y doped HGY is a promising material to fabricate high capacity hydrogen storage devices.

Two-dimensional graphyne-graphene heterostructure for all-carbon transistors

Semiconducting graphyne is a two-dimensional (2D) carbon allotrope with high mobility, which is promising for next generation all-carbon field effect transistors (FETs). In this work, the electronic properties of van der Waals heterostructure consists of 2D graphyne and graphene (GY/G) were studied from first-principles calculations. It is found that the band dispersion of isolated graphene and graphyne remain intact after they were stacked together. Due to the charge transfer from graphene to graphyne, the Fermi level of the GY/G heterostructure crosses the VB of graphene and the CB of graphyne. As a result, n-type Ohmic contact with zero Schottky barrier height (SBH) is obtained in GY/G based FETs. Moreover, the electron tunneling from graphene to graphyne is found to be efficient. Therefore, excellent electron transport properties can be expected in GY/G based FETs. Lastly, it is demonstrated that the SBH in the GY/G heterostructure can be tune by applying a vertical external electric field or doping, and the transition from n-type to p-type contact can be realized. These results show that GY/G is potentially suitable for 2D FETs, and provide insights into the development of all-carbon electronic devices.