Recent progress in Van der Waals 2D PtSe2

Atomic-Layer Controlled Transition from Inverse Rashba-Edelstein Effect to Inverse Spin Hall Effect in 2D PtSe2 Probed by THz Spintronic Emission

2D materials, such as transition metal dichalcogenides, are ideal platforms for spin-to-charge conversion (SCC) as they possess strong spin-orbit coupling (SOC), reduced dimensionality and crystal symmetries as well as tuneable band structure, compared to metallic structures. Moreover, SCC can be tuned with the number of layers, electric field, or strain. Here, SCC in epitaxially grown 2D PtSe2 by THz spintronic emission is studied since its 1T crystal symmetry and strong SOC favor SCC. High quality of as-grown PtSe2 layers is demonstrated, followed by in situ ferromagnet deposition by sputtering that leaves the PtSe2 unaffected, resulting in well-defined clean interfaces as evidenced with extensive characterization. Through this atomic growth control and using THz spintronic emission, the unique thickness-dependent electronic structure of PtSe2 allows the control of SCC. Indeed, the transition from the inverse Rashba-Edelstein effect (IREE) in 1-3 monolayers (ML) to the inverse spin Hall effect (ISHE) in multilayers (>3 ML) of PtSe2 enabling the extraction of the perpendicular spin diffusion length and relative strength of IREE and ISHE is demonstrated. This band structure flexibility makes PtSe2 an ideal candidate to explore the underlying mechanisms and engineering of the SCC as well as for the development of tuneable THz spintronic emitters.

Single-layer PtSe2 adsorbed with non-metallic atoms: geometrical, mechanical, electronic and optical properties and strain effects

Recently, single-layer PtSe2, possessing high carrier mobility and optical response, has been successfully fabricated. To further expand its application scope and find new physics, in this work, we functionalized it via the adsorption of non-metallic atoms X (X = H, B, C, N, O, and F) to form hybrid systems X-PtSe2, and their geometrical, mechanical, electronic, and optical properties as well as strain tuning effects were studied deeply. Calculations show that the energy stability of X-PtSe2 systems is significantly enhanced, and they also hold higher thermal and mechanical stability. Particularly, X-PtSe2 systems present excellent in-plane tenacity and out-of plane stiffness against deformations, which make them more applicable for designing nanodevices. Intrinsic PtSe2 is a semiconductor, while the X-PtSe2 system can be a band-gap narrowed semiconductor or metal, thus expanding the application scope for PtSe2, and the odd-even effect of electronic phase variation related to the atomic number is found. Besides, the wavelength range of optical adsorption is increased in X-PtSe2 systems, implying that its optical response region is wide, providing more options for developing optoelectronic devices. Moreover, it is shown that strain can flexibly tune the electronic property of X-PtSe2 systems, especially enhancing the optical absorption ability substantially, beneficial for their applications in solar devices.

Emerging MoS2 Wafer-Scale Technique for Integrated Circuits

As an outstanding representative of layered materials, molybdenum disulfide (MoS2) has excellent physical properties, such as high carrier mobility, stability, and abundance on earth. Moreover, its reasonable band gap and microelectronic compatible fabrication characteristics makes it the most promising candidate in future advanced integrated circuits such as logical electronics, flexible electronics, and focal-plane photodetector. However, to realize the all-aspects application of MoS2, the research on obtaining high-quality and large-area films need to be continuously explored to promote its industrialization. Although the MoS2 grain size has already improved from several micrometers to sub-millimeters, the high-quality growth of wafer-scale MoS2 is still of great challenge. Herein, this review mainly focuses on the evolution of MoS2 by including chemical vapor deposition, metal-organic chemical vapor deposition, physical vapor deposition, and thermal conversion technology methods. The state-of-the-art research on the growth and optimization mechanism, including nucleation, orientation, grain, and defect engineering, is systematically summarized. Then, this review summarizes the wafer-scale application of MoS2 in a transistor, inverter, electronics, and photodetectors. Finally, the current challenges and future perspectives are outlined for the wafer-scale growth and application of MoS2.

High-Sensitivity PtSe2 Surface Plasmon Resonance Biosensor Based on Metal-Si-Metal Waveguide Structure

PtSe₂ as a novel TMDCs material is used to modify the traditional SPR biosensors to improve the performance. On this basis, this research proposes a metal-Si-metal waveguide structure to further improve the performance of the biosensor. In this study, we not only studied the effects of waveguide structures containing different metals on the performance of biosensor, but also discussed the performance change of the biosensor with the change of PtSe₂ thickness. After the final optimization, a BK7-Au-Si-Au-PtSe₂ (2 nm) biosensor structure achieved the highest sensitivity of 193.8°/RIU. This work provides a new development idea for the study of SPR biosensors with waveguide structures in the future.

Optical Characterization of Few-Layer PtSe2 Nanosheet Films

Thin films of transition-metal dichalcogenides are potential materials for optoelectronic applications. However, the application of these materials in practice requires knowledge of their fundamental optical properties. Many existing methods determine optical constants using predefined models. Here, a different approach was used. We determine the sheet conductance and absorption coefficient of few-layer PtSe2 in the infrared and UV-vis ranges without recourse to any particular model for the optical constants. PtSe2 samples with a thickness of about 3-4 layers were prepared by selenization of 0.5 nm thick platinum films on sapphire substrates at different temperatures. Differential reflectance was extracted from transmittance and reflectance measurements from the front and back of the sample. The film thickness, limited to a few atomic layers, allowed a thin-film approximation to calculate the optical conductance and absorption coefficient. The former has a very different energy dependence in the infrared, near-infrared, and visible ranges. The absorption coefficient exhibits a strong power-law dependence on energy with an exponent larger than three in the mid-infrared and near-infrared regions. We have not observed any evidence for a band gap in PtSe2 thin layers down to an energy of 0.4 eV from our optical measurements.