Topical review: recent progress of charge density waves in 2D transition metal dichalcogenide-based heterojunctions and their applications

Unusual Geometric and Electronic Structures at Domain Boundaries in a Heterochiral Charge Density Wave Superlattice

Domain boundaries (DBs) in charge density wave (CDW) systems not only are important for understanding the mechanism of how CDW interplays with other quantum phases but also have potential for future CDW-based nanodevices. However, current research on DBs in CDW materials has been mainly limited to those between homochiral CDW domains, whereas DBs between heterochiral CDW domains, especially in the atomic layers, remain largely unexplored. Here, we have studied the geometric and electronic states of heterochiral DBs in single-layer and bilayer 1T-NbSe2 using scanning tunneling microscopy/spectroscopy. We observe the existence of diverse CDW configurations in a single heterochiral CDW DB with atomic resolution and reveal the corresponding electronic states. In addition, interlayer stacking further enriches the electronic properties of the DB. Our results offer deep insights into the relationship between the detailed CDW nanostructures and electronic behaviors, which has significant implications for DB engineering in strongly correlated CDW systems and related nanodevices.

Janus Monolayer of 1T-TaSSe: A Computational Study

Materials exhibiting charge density waves are attracting increasing attention owing to their complex physics and potential for applications. In this paper, we present a computational, first principles-based study of the Janus monolayer of 1T-TaSSe transition metal dichalcogenide. We extensively compare the results with those obtained for parent compounds, TaS2 and TaSe2 monolayers, with confirmed presence of 13×13 charge density waves. The structural and electronic properties of the normal (undistorted) phase and distorted phase with 13×13 periodic lattice distortion are discussed. In particular, for a normal phase, the emergence of dipolar moment due to symmetry breaking is demonstrated, and its sensitivity to an external electric field perpendicular to the monolayer is investigated. Moreover, the appearance of imaginary energy phonon modes suggesting structural instability is shown. For the distorted phase, we predict the presence of a flat, weakly dispersive band related to the appearance of charge density waves, similar to the one observed in parent compounds. The results suggest a novel platform for studying charge density waves in two-dimensional transition metal dichalcogenides.

Intercalating Architecture for the Design of Charge Density Wave in Metallic MA2Z4 Materials

We present a novel approach to induce charge density waves (CDWs) in metallic MA2Z4 materials, resembling the behavior observed in transition metal dichalcogenides (TMDCs). This method leverages the intercalating architecture to maintain the same crystal field and Fermi surface topologies. Our investigation reveals that CDW instability in these materials arises from electron-phonon coupling (EPC) between the d band and longitudinal acoustic (LA) phonons, mirroring TMDC's behavior. By combining α-MA2Z4 with 1H-MX2 materials in a predictive CDW phase diagram using critical EPC constants, we demonstrate the feasibility of extending CDW across material families with comparable crystal fields and reveal the crucial role in CDW instability of the competition between ionic charge transfer and electron correlation. We further uncover a strain-induced Mott transition in β2-NbGe2N4 monolayer featuring star-of-David patterns. This work highlights the potential of intercalating architecture to engineer CDW materials, expanding our understanding of CDW instability and correlation physics.

Charge density waves in two-dimensional transition metal dichalcogenides

Charge density wave (CDW is one of the most ubiquitous electronic orders in quantum materials. While the essential ingredients of CDW order have been extensively studied, a comprehensive microscopic understanding is yet to be reached. Recent research efforts on the CDW phenomena in two-dimensional (2D) materials provide a new pathway toward a deeper understanding of its complexity. This review provides an overview of the CDW orders in 2D with atomically thin transition metal dichalcogenides (TMDCs) as the materials platform. We mainly focus on the electronic structure investigations on the epitaxially grown TMDC samples with angle-resolved photoemission spectroscopy and scanning tunneling microscopy/spectroscopy as complementary experimental tools. We discuss the possible origins of the 2D CDW, novel quantum states coexisting with them, and exotic types of charge orders that can only be realized in the 2D limit.

Structural approach to charge density waves in low-dimensional systems: electronic instability and chemical bonding

The charge density wave (CDW) instability, usually occurring in low-dimensional metals, has been a topic of interest for longtime. However, some very fundamental aspects of the mechanism remain unclear. Recently, a plethora of new CDW materials, a substantial fraction of which is two-dimensional or even three-dimensional, has been prepared and characterised as bulk and/or single-layers. As a result, the need for revisiting the primary mechanism of the instability, based on the electron-hole instability established more than 50 years ago for quasi-one-dimensional (quasi-1D) conductors, has clearly emerged. In this work, we consider a large number of CDW materials to revisit the main concepts used in understanding the CDW instability, and emphasise the key role of the momentum dependent electron-phonon coupling in linking electronic and structural degrees of freedom. We argue that for quasi-1D systems, earlier weak coupling theories work appropriately and the energy gain due to the CDW and the concomitant periodic lattice distortion (PLD) remains primarily due to a Fermi surface nesting mechanism. However, for materials with higher dimensionality, intermediate and strong coupling regimes are generally at work and the modification of the chemical bonding network by the PLD is at the heart of the instability. We emphasise the need for a microscopic approach blending condensed matter physics concepts and state-of-the-art first-principles calculations with quite fundamental chemical bonding ideas in understanding the CDW phenomenon in these materials.

Realization of Multiple Charge-Density Waves in NbTe2 at the Monolayer Limit

Layered transition-metal dichalcogenides down to the monolayer (ML) limit provide a fertile platform for exploring charge-density waves (CDWs). Here, we experimentally unveil the richness of the CDW phases in ML-NbTe₂ for the first time. Not only the theoretically predicted 4 × 4 and 4 × 1 phases but also two unexpected 28×28 and 19×19 phases are realized. For such a complex CDW system, we establish an exhaustive growth phase diagram via systematic efforts in the material synthesis and scanning tunneling microscope characterization. Moreover, the energetically stable phase is the larger-scale order (19×19), which is surprisingly in contradiction to the prior prediction (4 × 4). These findings are confirmed using two different kinetic pathways: i.e., direct growth at proper growth temperatures (T) and low-T growth followed by high-T annealing. Our results provide a comprehensive diagram of the "zoo" of CDW orders in ML-NbTe₂.

Superconductivity in Te-Deficient ZrTe2

We present structural, electrical, and thermoelectric potential measurements on high-quality single crystals of ZrTe_1.8 grown from isothermal chemical vapor transport. These measurements show that the Te-deficient ZrTe_1.8, which forms the same structure as the nonsuperconducting ZrTe₂, is superconducting below 3.2 K. The temperature dependence of the upper critical field (H _c2) deviates from the behavior expected in conventional single-band superconductors, being best described by an electron-phonon two-gap superconducting model with strong intraband coupling. For the ZrTe_1.8 single crystals, the Seebeck potential measurements suggest that the charge carriers are predominantly negative, in agreement with the ab initio calculations. Through first-principles calculations within DFT, we show that the slight reduction of Te occupancy in ZrTe₂ unexpectedly gives origin to density of states peaks at the Fermi level due to the formation of localized Zr-d bands, possibly promoting electronic instabilities at the Fermi level and an increase at the critical temperature according to the standard BCS theory. These findings highlight that the Te deficiency promotes the electronic conditions for the stability of the superconducting ground state, suggesting that defects can fine-tune the electronic structure to support superconductivity.

Ullmann-Like Covalent Bond Coupling without Participation of Metal Atoms

Ullmann-like on-surface synthesis is one of the most appropriate approaches for the bottom-up fabrication of covalent organic nanostructures and many successes have been achieved. The Ullmann reaction requires the oxidative addition of a catalyst (a metal atom in most cases): the metal atom will insert into a carbon-halogen bond, forming organometallic intermediates, which are then reductively eliminated and form C-C covalent bonds. As a result, traditional Ullmann coupling involves reactions of multiple steps, making it difficult to control the final product. Moreover, forming the organometallic intermediates will potentially poison the metal surface catalytic reactivity. In the study, we used the 2D hBN, an atomically thin sp²-hybridized sheet with a large band gap, to protect the Rh(111) metal surface. It is an ideal 2D platform to decouple the molecular precursor from the Rh(111) surface while maintaining the reactivity of Rh(111). We realize an Ullmann-like coupling of a planar biphenylene-based molecule, i.e., 1,8-dibromobiphenylene (BPBr₂), on an hBN/Rh(111) surface with an ultrahigh selectivity of the biphenylene dimer product, containing 4-, 6-, and 8-membered rings. The reaction mechanism, including electron wave penetration and the template effect of the hBN, is elucidated by combining low-temperature scanning tunneling microscopy and density functional theory calculations. Our findings are expected to play an essential role regarding the high-yield fabrication of functional nanostructures for future information devices.

New magneto-polaron resonances in a monolayer of a transition metal dichalcogenide

Transition metal dichalcogenide (TMD) semiconductors are two-dimensional materials with great potential for the future of nano-optics and nano-optoelectronics as well as the rich and exciting development of basic research. The influence of an external magnetic field on a TMD monolayer raises a new question: to unveil the behavior of the magneto-polaron resonances (MPRs) associated with the phonon symmetry inherent in the system. It is shown that the renormalized Landau energy levels are modified by the interplay of the long-range Pekar-Fröhlich (PF) and short-range deformation potential (DP) interactions. This leads to a new series of MPRs involving the optical phonons at the center of the Brillouin zone. The coupling of the two Landau levels with the LO and [Formula: see text] optical phonon modes provokes resonant splittings of double avoided-crossing levels giving rise to three excitation branches. This effect appears as bigger energy gaps at the anticrossing points in the renormalized Landau levels. To explore the interplay between the MPRs, the electron-phonon interactions (PF and DP) and the couplings between adjacent Landau levels, a full Green's function treatment for the evaluation of the energy and its life-time broadening is developed. A generalization of the two-level approach is performed for the description of the new MPR branches. The obtained results are a guideline for the magneto-optical experiments in TMDs, where three MPR peaks should be observable.

Moiré modulation of charge density waves

Here we investigate how charge density waves (CDWs), inherent to a monolayer, are effected by creating twisted van der Waals structures. Homobilayers of metallic transition metal dichalcogenides (TMDs), at small twist angles where there is significant atomic reconstruction, are utilised as an example to investigate the interplay between the moiré domain structure and CDWs of different periods. For3×3CDWs, there is no geometric constraint to prevent the CDWs from propagating throughout the moiré structure. Whereas for2×2CDWs, to ensure the CDWs in each layer have the most favourable interactions in the domains, the CDW phase must be destroyed in the connecting domain walls. For3×3CDWs with twist angles close to 180^∘, moiré-scale triangular structures can form; while close to 0^∘, moiré-scale dimer domains occur. The star-of-David CDW (13×13) is found to host CDWs in the domains only, since there is one low energy stacking configuration, similar to the2×2CDWs. These predictions are offered for experimental verification in twisted bilayer metallic TMDs which host CDWs, and we hope this will stimulate further research on the interplay between the moiré superlattice and CDW phases intrinsic to the comprising 2D materials.

Resonant inelastic soft x-ray scattering on LaPt2Si2

X-ray absorption and resonant inelastic x-ray scattering spectra of LaPt₂Si₂single crystal at the Si 2pand La 4dedges are presented. The data are interpreted in terms of density functional theory, showing that the Si spectra can be described in terms of Sisanddlocal partial density of states (LPDOS), and the La spectra are due to quasi-atomic local 4fexcitations. Calculations show that Ptd-LPDOS dominates the occupied states, and a sharp localized Lafstate is found in the unoccupied states, in line with the observations.

Synthesis of transition metal dichalcogenide van der Waals heterostructures through chemical vapor deposition

Transition metal dichalcogenide (TMD) van der Waals (vdW) heterostructures show great potential in the exploration of novel physical phenomena and practical applications. Compared to the traditional mechanical stacking techniques, chemical vapor deposition (CVD) method exhibits more advantages in preparing TMD vdW heterostructures. CVD enables the large-scale production of high-quality materials with clean interfaces in the future. Herein, CVD methods for the synthesis of TMD vdW heterostructures are summarized. These methods are categorized in two major strategies, multi-step process and one-step process. The effects of various factors are demonstrated, including the temperature, nucleation, and precursors. Finally, the remaining challenges are discussed.

Atomic-scale visualization of chiral charge density wave superlattices and their reversible switching

Chirality is essential for various phenomena in life and matter. However, chirality and its switching in electronic superlattices, such as charge density wave (CDW) superlattices, remain elusive. In this study, we characterize the chirality switching with atom-resolution imaging in a single-layer NbSe₂ CDW superlattice by the technique of scanning tunneling microscopy. The atomic arrangement of the CDW superlattice is found continuous and intact although its chirality is switched. Several intermediate states are tracked by time-resolved imaging, revealing the fast and dynamic chirality transition. Importantly, the switching is reversibly realized with an external electric field. Our findings unveil the delicate switching process of chiral CDW superlattice in a two-dimensional (2D) crystal down to the atomic scale.

Untapped potential of 2D charge density wave chalcogenides as negative supercapacitor electrode materials

Two-dimensional (2D) materials have opened new avenues for the fabrication of ultrathin, transparent, and flexible functional devices. However, the conventional inorganic graphene analogues are either semiconductors or insulators with low electronic conductivity, hindering their use as supercapacitor electrode materials, which require high conductivity and large surface area. Recently, 2D charge density wave (CDW) materials, such as 2D chalcogenides, have attracted extensive attention as high performance functional nanomaterials in sensors, energy conversion, and spintronic devices. Herein, TaS2 is investigated as a potential CDW material for supercapacitors. The quantum capacitance (C Q) of the different TaS2 polymorphs (1T, 2H, and 3R) was estimated using density functional theory calculations for different numbers of TaS2 layers and alkali-metal ion (Li, Na and K) intercalants. The results demonstrate the potential of 2H- and 3R-polymorphs as efficient negative electrode materials for supercapacitor devices. The intercalation of K and Na ions in 1T-TaS2 led to an increase in the CQ with the intercalation of Li ions resulting in a decrease in the C Q. In contrast, Li ions were found to be the best intercalant for the 2H-TaS2 phase (highest C Q), while K ion intercalation was the best for the 3R-TaS2 phase. Moreover, increasing the number of layers of the1T-TaS2 resulted in the highest CQ. In contrast, C Q increases upon decreasing the number of layers of 2H-TaS2. Both 1T-MoS2 and 2H-TaS2 can be combined to construct a highly performing supercapacitor device as the positive and negative electrodes, respectively.

Flexoelectric and Piezoelectric Coupling in a Bended MoS2 Monolayer

Low-dimensional (LD) transition metal dichalcogenides (TMDs) in the form of nanoflakes, which consist of one or several layers, are the subject of intensive fundamental and applied research. The tuning of the electronic properties of the LD-TMDs are commonly related with applied strains and strain gradients, which can strongly affect their polar properties via piezoelectric and flexoelectric couplings. Using the density functional theory and phenomenological Landau approach, we studied the bended 2H-MoS2 monolayer and analyzed its flexoelectric and piezoelectric properties. The dependences of the dipole moment, strain, and strain gradient on the coordinate along the layer were calculated. From these dependences, the components of the flexoelectric and piezoelectric tensors have been determined and analyzed. Our results revealed that the contribution of the flexoelectric effect dominates over the piezoelectric effect in both in-plane and out-of-plane directions of the monolayer. In accordance with our calculations, a realistic strain gradient of about 1 nm−1 can induce an order of magnitude higher than the flexoelectric response in comparison with the piezoelectric reaction. The value of the dilatational flexoelectric coefficient is almost two times smaller than the shear component. It appeared that the components of effective flexoelectric and piezoelectric couplings can be described by parabolic dependences of the corrugation. Obtained results are useful for applications of LD-TMDs in strain engineering and flexible electronics.