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Tang T, Hu D, Lin D, Yang L, Shen Z, Yang W, Liu H, Li H, Fan X, Wang Z, Wang G. Third Harmonic Generation in Thin NbOI 2 and TaOI 2. NANOMATERIALS (BASEL, SWITZERLAND) 2024; 14:412. [PMID: 38470743 DOI: 10.3390/nano14050412] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/31/2024] [Revised: 02/18/2024] [Accepted: 02/21/2024] [Indexed: 03/14/2024]
Abstract
The niobium oxide dihalides have recently been identified as a new class of van der Waals materials exhibiting exceptionally large second-order nonlinear optical responses and robust in-plane ferroelectricity. In contrast to second-order nonlinear processes, third-order optical nonlinearities can arise irrespective of whether a crystal lattice is centrosymmetric. Here, we report third harmonic generation (THG) in two-dimensional (2D) transition metal oxide iodides, namely NbOI2 and TaOI2. We observe a comparable THG intensity from both materials. By benchmarking against THG from monolayer WS2, we deduce that the third-order susceptibility is approximately on the same order. THG resonances are revealed at different excitation wavelengths, likely due to enhancement by excitonic states and band edge resonances. The THG intensity increases for material thicknesses up to 30 nm, owing to weak interlayer coupling. After this threshold, it shows saturation or a decrease, due to optical interference effects. Our results establish niobium and tantalum oxide iodides as promising 2D materials for third-order nonlinear optics, with intrinsic in-plane ferroelectricity and thickness-tunable nonlinear efficiency.
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Affiliation(s)
- Tianhong Tang
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing 100081, China
- Beijing Key Lab of Nanophotonics and Ultrafine Optoelectronic Systems, Beijing Institute of Technology, Beijing 100081, China
| | - Deng Hu
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing 100081, China
- Beijing Key Lab of Nanophotonics and Ultrafine Optoelectronic Systems, Beijing Institute of Technology, Beijing 100081, China
| | - Di Lin
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing 100081, China
- Beijing Key Lab of Nanophotonics and Ultrafine Optoelectronic Systems, Beijing Institute of Technology, Beijing 100081, China
| | - Liu Yang
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing 100081, China
- Beijing Key Lab of Nanophotonics and Ultrafine Optoelectronic Systems, Beijing Institute of Technology, Beijing 100081, China
| | - Ziling Shen
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing 100081, China
- Beijing Key Lab of Nanophotonics and Ultrafine Optoelectronic Systems, Beijing Institute of Technology, Beijing 100081, China
| | - Wenchen Yang
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing 100081, China
- Beijing Key Lab of Nanophotonics and Ultrafine Optoelectronic Systems, Beijing Institute of Technology, Beijing 100081, China
| | - Haiyang Liu
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing 100081, China
- Beijing Key Lab of Nanophotonics and Ultrafine Optoelectronic Systems, Beijing Institute of Technology, Beijing 100081, China
| | - Hanting Li
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing 100081, China
- Beijing Key Lab of Nanophotonics and Ultrafine Optoelectronic Systems, Beijing Institute of Technology, Beijing 100081, China
| | - Xiaoyue Fan
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing 100081, China
- Beijing Key Lab of Nanophotonics and Ultrafine Optoelectronic Systems, Beijing Institute of Technology, Beijing 100081, China
| | - Zhiwei Wang
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing 100081, China
- Beijing Key Lab of Nanophotonics and Ultrafine Optoelectronic Systems, Beijing Institute of Technology, Beijing 100081, China
| | - Gang Wang
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing 100081, China
- Beijing Key Lab of Nanophotonics and Ultrafine Optoelectronic Systems, Beijing Institute of Technology, Beijing 100081, China
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Cao S, Su Y, Song KK, Qian P, Yan Y, Shi LB. Biaxial strain improving carrier mobility for inorganic perovskite: ab initioBoltzmann transport equation. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2022; 35:055702. [PMID: 36395506 DOI: 10.1088/1361-648x/aca3eb] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/07/2022] [Accepted: 11/17/2022] [Indexed: 06/16/2023]
Abstract
Inorganic halide perovskites have attracted interest due to their high efficiency and low cost. Considering the uncertainty of experimental measurements, it was important to predict the upper limit of carrier mobility. In this study, theab initioBoltzmann transport equation, including all electron-phonon interactions, was used to accurately predict the mobilities of CsPbI3, CsSnI3, CsPbBr3, and CsSnBr3. Using the iterative Boltzmann transport equation (IBTE), the calculated mobility for CsPbI3isµe= 512/µh= 379 cm2 V-1 s-1, and Sn-based perovskite exhibited high hole mobility. The longitudinal optical phonons associated with the stretching between halogen anions and divalent metal cations were revealed to be the dominant scattering source for the carriers. Furthermore, the effect of biaxial strain on mobility was investigated. We observed that biaxial compressive strain could improve the mobility of CsPbI3and CsPbBr3. Surprisingly, under a compressive strain of-2%, the mobilities of CsPbI3using IBTE approach were improved toµe= 1176/µh= 936 cm2 V-1 s-1. It was revealed that the compressive strain could decrease the effective mass of CsPbI3and CsPbBr3.
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Affiliation(s)
- Shuo Cao
- Beijing Advanced Innovation Center for Materials Genome Engineering, Corrosion and Protection Center, University of Science and Technology Beijing, Beijing 100083, People's Republic of China
| | - Ye Su
- Department of Physics, University of Science and Technology Beijing, Beijing 100083, People's Republic of China
| | - Ke-Ke Song
- Department of Physics, University of Science and Technology Beijing, Beijing 100083, People's Republic of China
| | - Ping Qian
- Department of Physics, University of Science and Technology Beijing, Beijing 100083, People's Republic of China
| | - Yu Yan
- Beijing Advanced Innovation Center for Materials Genome Engineering, Corrosion and Protection Center, University of Science and Technology Beijing, Beijing 100083, People's Republic of China
| | - Li-Bin Shi
- College of Physical Science and Technology, Bohai University, Jinzhou 121013, People's Republic of China
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Song G, Zhang C, Xie T, Wu Q, Zhang B, Huang X, Li Z, Li G, Gao B. Intrinsic ferromagnetism and the quantum anomalous Hall effect in two-dimensional MnOCl 2 monolayers. Phys Chem Chem Phys 2022; 24:20530-20537. [PMID: 35996999 DOI: 10.1039/d2cp02384a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
Due to their potential application in spintronic devices, two-dimensional (2D) ferromagnetic materials are highly desired. We used first-principles calculations and Monte Carlo simulations to investigate the electronic structure and magnetic characteristics of the MnOCl2 monolayers. We discovered two stable monolayer structures, Pmna-MnOCl2 and Pmmn-MnOCl2. Our findings show that the Pmna-MnOCl2 monolayer is an intrinsic ferromagnetic semiconductor with an indirect band gap of 0.152 eV and a Curie temperature (TC) of 202 K, while the Pmmn-MnOCl2 monolayer is an intrinsic ferromagnetic Dirac semimetal with a high TC (910 K) and triaxial magnetic anisotropy. We also show that a Pmmn-MnOCl2 monolayer with a nontrivial band gap of 6.2 meV can achieve the quantum anomalous Hall effect (QAHE) with Chern number C = 1. Additionally, the existence of a gapless edge state can be flexibly regulated by choosing the terminal edges. Our studies reveal that the Pmmn-MnOCl2 monolayer can serve as a candidate material to achieve high-temperature QAHE.
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Affiliation(s)
- Guang Song
- Department of Physics, Huaiyin Institute of Technology, Huaian 223003, China.
| | - Chengfeng Zhang
- Department of Physics, Huaiyin Institute of Technology, Huaian 223003, China.
| | - Tengfei Xie
- Department of Physics, Huaiyin Institute of Technology, Huaian 223003, China.
| | - Qingkang Wu
- Department of Physics, Huaiyin Institute of Technology, Huaian 223003, China.
| | - Bingwen Zhang
- Fujian Key Laboratory of Functional Marine Sensing Materials, Minjiang University, Fuzhou 350108, China
| | - Xiaokun Huang
- School of Materials Science and Engineering, Jingdezhen Ceramic Institute, Jingdezhen 333001, China
| | - Zhongwen Li
- Department of Physics, Huaiyin Institute of Technology, Huaian 223003, China.
| | - Guannan Li
- Department of Physics, Huaiyin Institute of Technology, Huaian 223003, China.
| | - Benling Gao
- Department of Physics, Huaiyin Institute of Technology, Huaian 223003, China.
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