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Zhong Z, Wu S, Li X, Wang Z, Yang Q, Huang B, Chen Y, Wang X, Lin T, Shen H, Meng X, Wang M, Shi W, Wang J, Chu J, Huang H. Robust Threshold-Switching Behavior Assisted by Cu Migration in a Ferroionic CuInP 2S 6 Heterostructure. ACS NANO 2023. [PMID: 37186552 DOI: 10.1021/acsnano.3c02406] [Citation(s) in RCA: 6] [Impact Index Per Article: 6.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/17/2023]
Abstract
The two-dimensional layered material CuInP2S6 (CIPS) has attracted significant research attention due to its nontrivial physical properties, including room-temperature ferroelectricity at the ultrathin limit and substantial ionic conductivity. Despite many efforts to control its ionic conductance and develop electronic devices, such as memristors, improving the stability of these devices remains a challenge. This work presents a highly stable threshold-switching device based on the Cu/CIPS/graphene heterostructure, achieved after a comprehensive investigation of the activation of Cu's ionic conductivity. The device exhibits exceptional threshold-switching performance, including good cycling endurance, a high on/off ratio of up to 104, low operation voltages, and an ultrasmall subthreshold swing of less than 1.8 mV/decade for the resistance-switching process. Through temperature-dependent electrical and Raman spectroscopy measurements, the stable resistive-switching mechanism is interpreted with a drifting and diffusion model of Cu ions under the electric field, rather than the conventional conducting filament mechanism. These results make the layered ferroionic CIPS material a promising candidate for information storage devices, demonstrating a compelling approach to achieving high-performance threshold-switching memristor devices.
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Affiliation(s)
- Zhipeng Zhong
- Shanghai Frontiers Science Research Base of Intelligent Optoelectronic and Perception, Institute of Optoelectronic and Department of Material Science, Fudan University, Shanghai 200433, People's Republic of China
| | - Shuaiqin Wu
- Shanghai Frontiers Science Research Base of Intelligent Optoelectronic and Perception, Institute of Optoelectronic and Department of Material Science, Fudan University, Shanghai 200433, People's Republic of China
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, People's Republic of China
| | - Xiang Li
- Shanghai Frontiers Science Research Base of Intelligent Optoelectronic and Perception, Institute of Optoelectronic and Department of Material Science, Fudan University, Shanghai 200433, People's Republic of China
| | - Zhiqiang Wang
- Shanghai Frontiers Science Research Base of Intelligent Optoelectronic and Perception, Institute of Optoelectronic and Department of Material Science, Fudan University, Shanghai 200433, People's Republic of China
| | - Qianyi Yang
- Shanghai Frontiers Science Research Base of Intelligent Optoelectronic and Perception, Institute of Optoelectronic and Department of Material Science, Fudan University, Shanghai 200433, People's Republic of China
| | - Bangchi Huang
- Shanghai Frontiers Science Research Base of Intelligent Optoelectronic and Perception, Institute of Optoelectronic and Department of Material Science, Fudan University, Shanghai 200433, People's Republic of China
| | - Yan Chen
- Shanghai Frontiers Science Research Base of Intelligent Optoelectronic and Perception, Institute of Optoelectronic and Department of Material Science, Fudan University, Shanghai 200433, People's Republic of China
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, People's Republic of China
| | - Xudong Wang
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, People's Republic of China
| | - Tie Lin
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, People's Republic of China
| | - Hong Shen
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, People's Republic of China
| | - Xiangjian Meng
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, People's Republic of China
| | - Ming Wang
- Frontier Institute of Chip and System, Fudan University, Shanghai 200433, People's Republic of China
- State Key Laboratory of Integrated Chip and Systems, Fudan University, Shanghai 200433, People's Republic of China
| | - Wu Shi
- State Key Laboratory of Surface Physics and Institute for Nanoelectronic Devices and Quantum Computing, Fudan University, Shanghai 200433, People's Republic of China
- Zhangjiang Fudan International Innovation Center, Fudan University, Shanghai 201210, People's Republic of China
| | - Jianlu Wang
- Shanghai Frontiers Science Research Base of Intelligent Optoelectronic and Perception, Institute of Optoelectronic and Department of Material Science, Fudan University, Shanghai 200433, People's Republic of China
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, People's Republic of China
- Frontier Institute of Chip and System, Fudan University, Shanghai 200433, People's Republic of China
- State Key Laboratory of Integrated Chip and Systems, Fudan University, Shanghai 200433, People's Republic of China
| | - Junhao Chu
- Shanghai Frontiers Science Research Base of Intelligent Optoelectronic and Perception, Institute of Optoelectronic and Department of Material Science, Fudan University, Shanghai 200433, People's Republic of China
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, People's Republic of China
| | - Hai Huang
- Shanghai Frontiers Science Research Base of Intelligent Optoelectronic and Perception, Institute of Optoelectronic and Department of Material Science, Fudan University, Shanghai 200433, People's Republic of China
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, People's Republic of China
- State Key Laboratory of Integrated Chip and Systems, Fudan University, Shanghai 200433, People's Republic of China
- Zhangjiang Fudan International Innovation Center, Fudan University, Shanghai 201210, People's Republic of China
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Dong X, Wei W, Sun H, Li S, Chen J, Chen J, Zhang X, Zhao Y, Li Y. Neotype kuramite optoelectronic memristor for bio-synaptic plasticity simulations. J Chem Phys 2023; 158:2889009. [PMID: 37154283 DOI: 10.1063/5.0151205] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/20/2023] [Accepted: 04/12/2023] [Indexed: 05/10/2023] Open
Abstract
Memristive devices with both electrically and optically induced synaptic dynamic behaviors will be crucial to the accomplishment of brain-inspired neuromorphic computing systems, in which the resistive materials and device architectures are two of the most important cornerstones, but still under challenge. Herein, kuramite Cu3SnS4 is newly introduced into poly-methacrylate as the switching medium to construct memristive devices, and the expected high-performance bio-mimicry of diverse optoelectronic synaptic plasticity is demonstrated. In addition to the excellent basic performances, such as stable bipolar resistive switching with On/Off ratio of ∼486, Set/Reset voltage of ∼-0.88/+0.96 V, and good retention feature of up to 104 s, the new designs of memristors possess not only the multi-level controllable resistive-switching memory property but also the capability of mimicking optoelectronic synaptic plasticity, including electrically and visible/near-infrared light-induced excitatory postsynaptic currents, short-/long-term memory, spike-timing-dependent plasticity, long-term plasticity/depression, short-term plasticity, paired-pulse facilitation, and "learning-forgetting-learning" behavior as well. Predictably, as a new class of switching medium material, such proposed kuramite-based artificial optoelectronic synaptic device has great potential to be applied to construct neuromorphic architectures in simulating human brain functions.
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Affiliation(s)
- Xiaofei Dong
- Key Laboratory of Atomic and Molecular Physics & Functional Materials of Gansu Province, College of Physics and Electronic Engineering, Northwest Normal University, Lanzhou 730070, China
| | - Wenbin Wei
- Key Laboratory of Atomic and Molecular Physics & Functional Materials of Gansu Province, College of Physics and Electronic Engineering, Northwest Normal University, Lanzhou 730070, China
| | - Hao Sun
- Key Laboratory of Atomic and Molecular Physics & Functional Materials of Gansu Province, College of Physics and Electronic Engineering, Northwest Normal University, Lanzhou 730070, China
| | - Siyuan Li
- Key Laboratory of Atomic and Molecular Physics & Functional Materials of Gansu Province, College of Physics and Electronic Engineering, Northwest Normal University, Lanzhou 730070, China
| | - Jianbiao Chen
- Key Laboratory of Atomic and Molecular Physics & Functional Materials of Gansu Province, College of Physics and Electronic Engineering, Northwest Normal University, Lanzhou 730070, China
| | - Jiangtao Chen
- Key Laboratory of Atomic and Molecular Physics & Functional Materials of Gansu Province, College of Physics and Electronic Engineering, Northwest Normal University, Lanzhou 730070, China
| | - Xuqiang Zhang
- Key Laboratory of Atomic and Molecular Physics & Functional Materials of Gansu Province, College of Physics and Electronic Engineering, Northwest Normal University, Lanzhou 730070, China
| | - Yun Zhao
- Key Laboratory of Atomic and Molecular Physics & Functional Materials of Gansu Province, College of Physics and Electronic Engineering, Northwest Normal University, Lanzhou 730070, China
| | - Yan Li
- Key Laboratory of Atomic and Molecular Physics & Functional Materials of Gansu Province, College of Physics and Electronic Engineering, Northwest Normal University, Lanzhou 730070, China
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