Scaling infrared detectors-status and outlook

Single 5-centimeter-aperture metalens enabled intelligent lightweight mid-infrared thermographic camera

Existing mid-infrared thermographic cameras rely on a stack of refractive lenses, resulting in bulky and heavy imaging systems that restrict their broader utility. Here, we demonstrate a lightweight metalens-based thermographic camera (MTC) enabled by a single 0.5-mm-thick, 3.7-g-weight, flat, and mass-producible metalens. The large aperture size (5 cm) of our metalens, when combined with an uncooled focal plane array, enables thermal imaging at distances of tens of meters. By computationally removing the veiling glare, our MTC realizes the temperature mapping with an inaccuracy of less than ±0.7% within the range of 35° to 700°C and shows exceptional environmental adaptability. Furthermore, by using intelligent algorithms and spectral filtering, our uncooled MTC enables visualization and quantification of the SF6 gas leakage at a long distance of 5 m, with a remarkable minimum detectable leak rate of 0.2 sccm. Our work opens the door to the lightweight and multifunctional intelligent thermal imaging systems.

Detector size selection for long-range targeting performance in the extended shortwave infrared band

Interest in the eSWIR band is growing due to focal plane array technology advancements with mercury cadmium telluride and type-II superlattice materials. As design and fabrication processes improve, eSWIR detector size, weight, and power can now be optimized. For some applications, it is desirable to have a smaller detector size. Reduced solar illumination in the 2 to 2.5 μm spectral range creates a fundamental limit to passive imaging performance in the eSWIR band where the resolution benefit of small detectors cannot out-compete the reduced SNR in photon-starved environments. This research explores the underlying theory using signal-to-noise ratio radiometry and modeled target discrimination performance to assess the optimal detector size for eSWIR dependent upon illumination conditions. Finally, we model continuous-wave laser illumination in the eSWIR band to compare the effect of detector size on active and passive imaging for long-range object discrimination.

Ultraflexible Wireless Imager Integrated with Organic Circuits for Broadband Infrared Thermal Analysis

Flexible imagers are currently under intensive development as versatile optical sensor arrays, designed to capture images of surfaces and internals, irrespective of their shape. A significant challenge in developing flexible imagers is extending their detection capabilities to encompass a broad spectrum of infrared light, particularly terahertz (THz) light at room temperature. This advancement is crucial for thermal and biochemical applications. In this study, a flexible infrared imager is designed using uncooled carbon nanotube (CNT) sensors and organic circuits. The CNT sensors, fabricated on ultrathin 2.4 µm substrates, demonstrate enhanced sensitivity across a wide infrared range, spanning from near-infrared to THz wavelengths. Moreover, they retain their characteristics under bending and crumpling. The design incorporates light-shielded organic transistors and circuits, functioning reliably under light irradiation, and amplifies THz detection signals by a factor of 10. The integration of both CNT sensors and shielded organic transistors into an 8 × 8 active-sensor matrix within the imager enables sequential infrared imaging and nondestructive assessment for heat sources and in-liquid chemicals through wireless communication systems. The proposed imager, offering unique functionality, shows promise for applications in biochemical analysis and soft robotics.

Systematic prediction method for flip-chip bonding connectivity of ultra-large array infrared detector

The flip-chip bonding technique utilized in ultra-large array infrared detectors has a substantial impact on connectivity rates. The electrical connectivity of the flip-chip bonding process exhibits randomness due to the difficulties in the surface control of large-scale devices. This restriction hinders the development of ultra-large array devices. In this work, the surface shape matching calculation is performed based on the surface shape distributions measured from infrared detector chips and readout circuits. The multi combinations and multi rotation angles are employed to calculate the distribution of combined surface distances, and the combined PV (peak-to-valley) value is applied to describe the severity of surface mismatch. Test devices with combined PV values ranging from 7.460 µm to 4.265 µm are prepared and tested, and the connectivity rate achieves an improvement from 74.57% to 99.75% between mismatched devices and matching devices. The electrical test results of test devices indicate that disconnections tend to cluster in areas where surface distance is over 5 µm, which is determined by extracting and analyzing the surface distance correlated to electrical test results. A standard based on the combined PV value is established to select matching combinations and ensure a high connectivity rate of 99% or 97% for infrared detectors, while the connectivity rates of randomly selected devices are no higher than 91%. This work presents a systematic method to predict and improve the connectivity rate of flip-chip bonding process for ultra-large array infrared detector.

Bridging the gap between surface physics and photonics

Use and performance criteria of photonic devices increase in various application areas such as information and communication, lighting, and photovoltaics. In many current and future photonic devices, surfaces of a semiconductor crystal are a weak part causing significant photo-electric losses and malfunctions in applications. These surface challenges, many of which arise from material defects at semiconductor surfaces, include signal attenuation in waveguides, light absorption in light emitting diodes, non-radiative recombination of carriers in solar cells, leakage (dark) current of photodiodes, and light reflection at solar cell interfaces for instance. To reduce harmful surface effects, the optical and electrical passivation of devices has been developed for several decades, especially with the methods of semiconductor technology. Because atomic scale control and knowledge of surface-related phenomena have become relevant to increase the performance of different devices, it might be useful to enhance the bridging of surface physics to photonics. Toward that target, we review some evolving research subjects with open questions and possible solutions, which hopefully provide example connecting points between photonic device passivation and surface physics. One question is related to the properties of the wet chemically cleaned semiconductor surfaces which are typically utilized in device manufacturing processes, but which appear to be different from crystalline surfaces studied in ultrahigh vacuum by physicists. In devices, a defective semiconductor surface often lies at an embedded interface formed by a thin metal or insulator film grown on the semiconductor crystal, which makes the measurements of its atomic and electronic structures difficult. To understand these interface properties, it is essential to combine quantum mechanical simulation methods. This review also covers metal-semiconductor interfaces which are included in most photonic devices to transmit electric carriers to the semiconductor structure. Low-resistive and passivated contacts with an ultrathin tunneling barrier are an emergent solution to control electrical losses in photonic devices.

An Infrared Near-Sensor Reservoir Computing System Based on Large-Dynamic-Space Memristor with Tens of Thousands of States for Dynamic Gesture Perception

To efficiently process the massive amount of sensor data, it is demanding to develop a new paradigm. Inspired by neurobiological systems, an infrared near-senor reservoir computing (RC) system, consisting of infrared sensors and memristors based on single-crystalline LiTaO3 and LiNbO3 (LN) thin film respectively, is demonstrated. The analog memristor is used as a reservoir in the RC system to process sensor signals with spatiotemporal characteristics. LN crystal structure stacked with oxygen octahedra provides favorable conditions for reliable Mott variable-range hopping conduction, which provides the memristor with tens of thousands of reservoir states within a large dynamic range. With the characteristics, the analog sensor signals with high data fidelity can be directly fed to the memristive reservoir, and the spatiotemporal features can be separated and mapped. The system demonstrated a dynamic gesture perception task, achieving an accuracy of 99.6%, which highlights the great application potential of the memristor in signal sensor processing and will advance the application of artificial intelligence in sensor systems. Crystal ion slicing techniques are used to fabricate a single-crystalline thin film for both the memristor and sensor, which opens up the possibility of realizing monolithic integration of a memristor-based near-sensor computing system.

Organic photodiodes with bias-switchable photomultiplication and photovoltaic modes

The limited sensitivity of photovoltaic-type photodiodes makes it indispensable to use pre-amplifier circuits for effectively extracting electrical signals, especially when detecting dim light. Additionally, the photomultiplication photodiodes with light amplification function suffer from potential damages caused by high power consumption under strong light. In this work, by adopting the synergy strategy of thermal-induced interfacial structural traps and blocking layers, we develop a dual-mode visible-near infrared organic photodiode with bias-switchable photomultiplication and photovoltaic operating modes, exhibiting high specific detectivity (~1012 Jones) and fast response speed (0.05/3.03 ms for photomultiplication-mode; 8.64/11.14 μs for photovoltaic-mode). The device also delivers disparate external quantum efficiency in two optional operating modes, showing potential in simultaneously detecting dim and strong light ranging from ~10-9 to 10-1 W cm-2. The general strategy and working mechanism are validated in different organic layers. This work offers an attractive option to develop bias-switchable multi-mode organic photodetectors for various application scenarios.

Infrared HOT Photodetectors: Status and Outlook

At the current stage of long-wavelength infrared (LWIR) detector technology development, the only commercially available detectors that operate at room temperature are thermal detectors. However, the efficiency of thermal detectors is modest: they exhibit a slow response time and are not very useful for multispectral detection. On the other hand, in order to reach better performance (higher detectivity, better response speed, and multispectral response), infrared (IR) photon detectors are used, requiring cryogenic cooling. This is a major obstacle to the wider use of IR technology. For this reason, significant efforts have been taken to increase the operating temperature, such as size, weight and power consumption (SWaP) reductions, resulting in lower IR system costs. Currently, efforts are aimed at developing photon-based infrared detectors, with performance being limited by background radiation noise. These requirements are formalized in the Law 19 standard for P-i-N HgCdTe photodiodes. In addition to typical semiconductor materials such as HgCdTe and type-II AIIIBV superlattices, new generations of materials (two-dimensional (2D) materials and colloidal quantum dots (CQDs)) distinguished by the physical properties required for infrared detection are being considered for future high-operating-temperature (HOT) IR devices. Based on the dark current density, responsivity and detectivity considerations, an attempt is made to determine the development of a next-gen IR photodetector in the near future.

Development and Core Technologies for Intelligent SWaP3 Infrared Cameras: A Comprehensive Review and Analysis

With the development of infrared detection and imaging technology, infrared cameras (IRCs) play an important role in many fields, such as military, industry, and civilian. Additionally, the requirements for the size, performance, and intelligence of IRCs are becoming more and more strict. Consequently, the associated research and development (R&D) of IRCs is gradually focused on the aspects of miniaturization, high performance, intelligence, low power consumption, and low cost, involving many frontier fields, including artificial intelligence, new materials, new optical systems, and electronics systems. In fact, there are continual studies on intelligent SWaP³ IRCs, but unfortunately, a systematic arrangement and analysis are lacking. Therefore, a systematical and comprehensive review for the developments and core technologies of the intelligent SWaP³ IRCs is really needed. In this paper, in terms of the aforementioned requirements, we conduct a review and analysis of current intelligent SWaP³ IRCs based on 90 literature and statistics in recent decades to provide the relevant developers with a helpful reference for facilitating the indicator optimization of intelligent SWaP³ IRCs with new developed technologies. We analyze the development of SWaP³ IRCs in the aspects of lightweight, miniaturization, low price, and high performance, including hyperspectral resolution, high spatial resolution, large field of view (FOV), and wide dynamic elaborately. Moreover, the development in low power consumption and intelligence is also discussed in detail. Additionally, we briefly summarize the primary applications of intelligent SWaP³ IRCs in military, scientific, and civil. Then, the core technologies comprising high-integration, lightweight, hyperspectral imaging (HSI), low-power consumption, as well as the realization of high performance such as high-resolution, high-frame, and wide-dynamic range of SWaP³ IRCs are discussed and analyzed in detail. Finally, we prospect for the intelligent SWaP³ IRCs that it is necessary to continuously expand the concept of SWaP³ by reliability, stability, extensibility, and safety. In addition, it is useful to embed cutting-edge technologies such as small pixel pitch array, multi-sensors fusion, and deploy intelligent algorithms to IRCs. Additionally, the improvement of the whole machine from multi-dimension such as chip, camera, and system is expected and needs to be taken more seriously. It is hoped that this paper can provide a reference for the R&D of intelligent SWaP³ IRCs in the future.

Monolayer Graphene Terahertz Detector Integrated with Artificial Microstructure

Graphene, known for its high carrier mobility and broad spectral response range, has proven to be a promising material in photodetection applications. However, its high dark current has limited its application as a high-sensitivity photodetector at room temperature, particularly for the detection of low-energy photons. Our research proposes a new approach for overcoming this challenge by designing lattice antennas with an asymmetric structure for use in combination with high-quality monolayers of graphene. This configuration is capable of sensitive detection of low-energy photons. The results show that the graphene terahertz detector-based microstructure antenna has a responsivity of 29 V·W^-1 at 0.12 THz, a fast response time of 7 μs, and a noise equivalent power of less than 8.5 pW/Hz^1/2. These results provide a new strategy for the development of graphene array-based room-temperature terahertz photodetectors.