1
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Dietl T. Effects of Charge Dopants in Quantum Spin Hall Materials. PHYSICAL REVIEW LETTERS 2023; 130:086202. [PMID: 36898101 DOI: 10.1103/physrevlett.130.086202] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/09/2022] [Accepted: 01/30/2023] [Indexed: 06/18/2023]
Abstract
Semiconductors' sensitivity to electrostatic gating and doping accounts for their widespread use in information communication and new energy technologies. It is demonstrated quantitatively and with no adjustable parameters that the presence of paramagnetic acceptor dopants elucidates a variety of hitherto puzzling properties of two-dimensional topological semiconductors at the topological phase transition and in the regime of the quantum spin Hall effect. The concepts of resonant states, charge correlation, Coulomb gap, exchange interaction between conducting electrons and holes localized on acceptors, strong coupling limit of the Kondo effect, and bound magnetic polaron explain a short topological protection length, high hole mobilities compared with electron mobilities, and different temperature dependence of the spin Hall resistance in HgTe and (Hg,Mn)Te quantum wells.
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Affiliation(s)
- Tomasz Dietl
- International Research Centre MagTop, Institute of Physics, Polish Academy of Sciences, Aleja Lotnikow 32/46, PL-02668 Warsaw, Poland and WPI Advanced Institute for Materials Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan
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2
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Zhou S, Zhu M, Liu Q, Xiao Y, Cui Z, Guo C. High-Temperature Quantum Hall Effect in Graphite-Gated Graphene Heterostructure Devices with High Carrier Mobility. NANOMATERIALS (BASEL, SWITZERLAND) 2022; 12:3777. [PMID: 36364553 PMCID: PMC9654316 DOI: 10.3390/nano12213777] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 09/28/2022] [Revised: 10/19/2022] [Accepted: 10/22/2022] [Indexed: 06/16/2023]
Abstract
Since the discovery of the quantum Hall effect in 1980, it has attracted intense interest in condensed matter physics and has led to a new type of metrological standard by utilizing the resistance quantum. Graphene, a true two-dimensional electron gas material, has demonstrated the half-integer quantum Hall effect and composite-fermion fractional quantum Hall effect due to its unique massless Dirac fermions and ultra-high carrier mobility. Here, we use a monolayer graphene encapsulated with hexagonal boron nitride and few-layer graphite to fabricate micrometer-scale graphene Hall devices. The application of a graphite gate electrode significantly screens the phonon scattering from a conventional SiO2/Si substrate, and thus enhances the carrier mobility of graphene. At a low temperature, the carrier mobility of graphene devices can reach 3 × 105 cm2/V·s, and at room temperature, the carrier mobility can still exceed 1 × 105 cm2/V·s, which is very helpful for the development of high-temperature quantum Hall effects under moderate magnetic fields. At a low temperature of 1.6 K, a series of half-integer quantum Hall plateaus are well-observed in graphene with a magnetic field of 1 T. More importantly, the ν = ±2 quantum Hall plateau clearly persists up to 150 K with only a few-tesla magnetic field. These findings show that graphite-gated high-mobility graphene devices hold great potential for high-sensitivity Hall sensors and resistance metrology standards for the new Système International d'unités.
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3
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Rathore S, Patel DK, Thakur MK, Haider G, Kalbac M, Kruskopf M, Liu CI, Rigosi AF, Elmquist RE, Liang CT, Hong PD. Highly sensitive broadband binary photoresponse in gateless epitaxial graphene on 4H-SiC. CARBON 2021; 184:10.1016/j.carbon.2021.07.098. [PMID: 37200678 PMCID: PMC10190169 DOI: 10.1016/j.carbon.2021.07.098] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/20/2023]
Abstract
Due to weak light-matter interaction, standard chemical vapor deposition (CVD)/exfoliated single-layer graphene-based photodetectors show low photoresponsivity (on the order of mA/W). However, epitaxial graphene (EG) offers a more viable approach for obtaining devices with good photoresponsivity. EG on 4H-SiC also hosts an interfacial buffer layer (IBL), which is the source of electron carriers applicable to quantum optoelectronic devices. We utilize these properties to demonstrate a gate-free, planar EG/4H-SiC-based device that enables us to observe the positive photoresponse for (405-532) nm and negative photoresponse for (632-980) nm laser excitation. The broadband binary photoresponse mainly originates from the energy band alignment of the IBL/EG interface and the highly sensitive work function of the EG. We find that the photoresponsivity of the device is > 10 A/W under 405 nm of power density 7.96 mW/cm2 at 1 V applied bias, which is three orders of magnitude greater than the obtained values of CVD/exfoliated graphene and higher than the required value for practical applications. These results path the way for selective light-triggered logic devices based on EG and can open a new window for broadband photodetection.
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Affiliation(s)
- Shivi Rathore
- Department of Materials Science and Engineering, National Taiwan University of Science and Technology, Taipei, 106335, Taiwan
| | - Dinesh Kumar Patel
- Department of Physics, National Taiwan University, Taipei, 106319, Taiwan
- Physical Measurement Laboratory, National Institute of Standards and Technology (NIST), Gaithersburg MD, 20899, USA
| | - Mukesh Kumar Thakur
- J. Heyrovsky Institute of Physical Chemistry, Czech Academy of Sciences, Prague 8, Czech Republic
| | - Golam Haider
- J. Heyrovsky Institute of Physical Chemistry, Czech Academy of Sciences, Prague 8, Czech Republic
- Corresponding author. (G. Haider)
| | - Martin Kalbac
- J. Heyrovsky Institute of Physical Chemistry, Czech Academy of Sciences, Prague 8, Czech Republic
| | - Mattias Kruskopf
- Physikalisch-Technische Bundesanstalt (PTB), Bundesallee 100, D-38116, Braunschweig, Germany
| | - Chieh-I Liu
- Physical Measurement Laboratory, National Institute of Standards and Technology (NIST), Gaithersburg MD, 20899, USA
- Department of Chemistry and Biochemistry, University of Maryland, College Park, MD, 20742, USA
| | - Albert F. Rigosi
- Physical Measurement Laboratory, National Institute of Standards and Technology (NIST), Gaithersburg MD, 20899, USA
| | - Randolph E. Elmquist
- Physical Measurement Laboratory, National Institute of Standards and Technology (NIST), Gaithersburg MD, 20899, USA
| | - Chi-Te Liang
- Department of Physics, National Taiwan University, Taipei, 106319, Taiwan
- Corresponding author. (C.-T. Liang)
| | - Po-Da Hong
- Department of Materials Science and Engineering, National Taiwan University of Science and Technology, Taipei, 106335, Taiwan
- Corresponding author. (P.-D. Hong)
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Bhattacharyya S, Akhgar G, Gebert M, Karel J, Edmonds MT, Fuhrer MS. Recent Progress in Proximity Coupling of Magnetism to Topological Insulators. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2021; 33:e2007795. [PMID: 34185344 DOI: 10.1002/adma.202007795] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/16/2020] [Revised: 01/11/2021] [Indexed: 05/08/2023]
Abstract
Inducing long-range magnetic order in 3D topological insulators can gap the Dirac-like metallic surface states, leading to exotic new phases such as the quantum anomalous Hall effect or the axion insulator state. These magnetic topological phases can host robust, dissipationless charge and spin currents or unique magnetoelectric behavior, which can be exploited in low-energy electronics and spintronics applications. Although several different strategies have been successfully implemented to realize these states, to date these phenomena have been confined to temperatures below a few Kelvin. This review focuses on one strategy: inducing magnetic order in topological insulators by proximity of magnetic materials, which has the capability for room temperature operation, unlocking the potential of magnetic topological phases for applications. The unique advantages of this strategy, the important physical mechanisms facilitating magnetic proximity effect, and the recent progress to achieve, understand, and harness proximity-coupled magnetic order in topological insulators are discussed. Some emerging new phenomena and applications enabled by proximity coupling of magnetism and topological materials, such as skyrmions and the topological Hall effect, are also highlighted, and the authors conclude with an outlook on remaining challenges and opportunities in the field.
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Affiliation(s)
- Semonti Bhattacharyya
- School of Physics and Astronomy, Monash University, Victoria, 3800, Australia
- ARC Centre of Excellence in Future Low-Energy Electronics Technologies, Monash University, Victoria, 3800, Australia
| | - Golrokh Akhgar
- School of Physics and Astronomy, Monash University, Victoria, 3800, Australia
- ARC Centre of Excellence in Future Low-Energy Electronics Technologies, Monash University, Victoria, 3800, Australia
| | - Matthew Gebert
- School of Physics and Astronomy, Monash University, Victoria, 3800, Australia
- ARC Centre of Excellence in Future Low-Energy Electronics Technologies, Monash University, Victoria, 3800, Australia
| | - Julie Karel
- ARC Centre of Excellence in Future Low-Energy Electronics Technologies, Monash University, Victoria, 3800, Australia
- Department of Materials Science and Engineering, Monash University, Clayton, Victoria, 3800, Australia
| | - Mark T Edmonds
- School of Physics and Astronomy, Monash University, Victoria, 3800, Australia
- ARC Centre of Excellence in Future Low-Energy Electronics Technologies, Monash University, Victoria, 3800, Australia
| | - Michael S Fuhrer
- School of Physics and Astronomy, Monash University, Victoria, 3800, Australia
- ARC Centre of Excellence in Future Low-Energy Electronics Technologies, Monash University, Victoria, 3800, Australia
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5
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Marie LRS, Liu CI, Hu IF, Hill HM, Saha D, Elmquist RE, Lian CT, Newell DB, Barbara P, Hagmann JA, Rigosi AF. Abrikosov vortex corrections to effective magnetic field enhancement in epitaxial graphene. PHYSICAL REVIEW. B 2021; 104:10.1103/physrevb.104.085435. [PMID: 38883413 PMCID: PMC11177804 DOI: 10.1103/physrevb.104.085435] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2024]
Abstract
Here, we report the effects of enhanced magnetic fields resulting from type-II superconducting NbTiN slabs adjacent to narrow Hall bar devices fabricated from epitaxial graphene. Observed changes in the magnetoresistances were found to have minimal contributions from device inhomogeneities, magnet hysteresis, electron density variations along the devices, and transient phenomena. We hypothesize that Abrikosov vortices, present in type-II superconductors, contribute to these observations. By determining the London penetration depth, coupled with elements of Ginzburg-Landau theory, one can approximate an upper bound on the effect that vortex densities at low fields (< 1T) have on the reported observations. These analyses offer insights into device fabrication and how to utilize the Meissner effect for any low-field and low-temperature applications using superconductors.
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Affiliation(s)
- Luke R. St. Marie
- Physical Measurement Laboratory, National Institute of Standards and Technology (NIST), Gaithersburg, Maryland 20899, USA
- Department of Physics, Georgetown University, Washington, DC 20057, USA
| | - Chieh-I Liu
- Physical Measurement Laboratory, National Institute of Standards and Technology (NIST), Gaithersburg, Maryland 20899, USA
- Department of Chemistry and Biochemistry, University of Maryland, College Park, Maryland 20742, USA
| | - I-Fan Hu
- Physical Measurement Laboratory, National Institute of Standards and Technology (NIST), Gaithersburg, Maryland 20899, USA
- Department of Physics, National Taiwan University, Taipei 10617, Taiwan
| | - Heather M. Hill
- Physical Measurement Laboratory, National Institute of Standards and Technology (NIST), Gaithersburg, Maryland 20899, USA
| | - Dipanjan Saha
- Physical Measurement Laboratory, National Institute of Standards and Technology (NIST), Gaithersburg, Maryland 20899, USA
| | - Randolph E. Elmquist
- Physical Measurement Laboratory, National Institute of Standards and Technology (NIST), Gaithersburg, Maryland 20899, USA
| | - Chi-Te Lian
- Department of Physics, Georgetown University, Washington, DC 20057, USA
| | - David B. Newell
- Physical Measurement Laboratory, National Institute of Standards and Technology (NIST), Gaithersburg, Maryland 20899, USA
| | - Paola Barbara
- Department of Physics, Georgetown University, Washington, DC 20057, USA
| | - Joseph A. Hagmann
- Physical Measurement Laboratory, National Institute of Standards and Technology (NIST), Gaithersburg, Maryland 20899, USA
| | - Albert F. Rigosi
- Physical Measurement Laboratory, National Institute of Standards and Technology (NIST), Gaithersburg, Maryland 20899, USA
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6
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Kruskopf M, Bauer S, Pimsut Y, Chatterjee A, Patel DK, Rigosi AF, Elmquist RE, Pierz K, Pesel E, Götz M, Schurr J. Graphene Quantum Hall Effect Devices for AC and DC Electrical Metrology. IEEE TRANSACTIONS ON ELECTRON DEVICES 2021; 68:10.1109/ted.2021.3082809. [PMID: 36452065 PMCID: PMC9706404 DOI: 10.1109/ted.2021.3082809] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
A new type of graphene-based quantum Hall standards is tested for electrical quantum metrology applications at alternating current (ac) and direct current (dc). The devices are functionalized with Cr(CO)3 to control the charge carrier density and have branched Hall contacts based on NbTiN superconducting material. The work is an in-depth study about the characteristic capacitances and related losses in the ac regime of the devices and about their performance during precision resistance measurements at dc and ac.
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Affiliation(s)
- Mattias Kruskopf
- Physikalisch-Technische Bundesanstalt, 38116 Braunschweig, Germany
| | - Stephan Bauer
- Physikalisch-Technische Bundesanstalt, 38116 Braunschweig, Germany
| | - Yaowaret Pimsut
- Physikalisch-Technische Bundesanstalt, 38116 Braunschweig, Germany; National Metrology Institute, Pathum Thani 12120, Thailand
| | - Atasi Chatterjee
- Physikalisch-Technische Bundesanstalt, 38116 Braunschweig, Germany
| | - Dinesh K Patel
- Graduate Institute of Applied Physics, National Taiwan University, Taipei 10617, Taiwan
| | - Albert F Rigosi
- National Institute of Standards and Technology, Gaithersburg, MD 20899 USA
| | | | - Klaus Pierz
- Physikalisch-Technische Bundesanstalt, 38116 Braunschweig, Germany
| | - Eckart Pesel
- Physikalisch-Technische Bundesanstalt, 38116 Braunschweig, Germany
| | - Martin Götz
- Physikalisch-Technische Bundesanstalt, 38116 Braunschweig, Germany
| | - Jürgen Schurr
- Physikalisch-Technische Bundesanstalt, 38116 Braunschweig, Germany
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7
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Hu IF, Panna AR, Rigosi AF, Kruskopf M, Patel DK, Liu CI, Saha D, Payagala SU, Newell DB, Jarrett DG, Liang CT, Elmquist RE. Onsager-Casimir frustration from resistance anisotropy in graphene quantum Hall devices. PHYSICAL REVIEW. B 2021; 104:10.1103/physrevb.104.085418. [PMID: 36875776 PMCID: PMC9982844 DOI: 10.1103/physrevb.104.085418] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
We report on nonreciprocity observations in several configurations of graphene-based quantum Hall devices. Two distinct measurement configurations were adopted to verify the universality of the observations (i.e., two-terminal arrays and four-terminal devices). Our findings determine the extent to which epitaxial graphene anisotropies contribute to the observed asymmetric Hall responses. The presence of backscattering induces a device-dependent asymmetry rendering the Onsager-Casimir relations limited in their capacity to describe the behavior of such devices, except in the low-field classical regime and the fully quantized Hall state. The improved understanding of this quantum electrical process broadly limits the applicability of the reciprocity principle in the presence of quantum phase transitions and for anisotropic two-dimensional materials.
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Affiliation(s)
- I-Fan Hu
- Physical Measurement Laboratory, National Institute of Standards and Technology (NIST), Gaithersburg, Maryland 20899, USA
- Department of Physics, National Taiwan University, Taipei 10617, Taiwan
| | - Alireza R. Panna
- Physical Measurement Laboratory, National Institute of Standards and Technology (NIST), Gaithersburg, Maryland 20899, USA
| | - Albert F. Rigosi
- Physical Measurement Laboratory, National Institute of Standards and Technology (NIST), Gaithersburg, Maryland 20899, USA
| | - Mattias Kruskopf
- Physikalisch-Technische Bundesanstalt, Bundesallee 100, 38116 Braunschweig, Germany
| | - Dinesh K. Patel
- Physical Measurement Laboratory, National Institute of Standards and Technology (NIST), Gaithersburg, Maryland 20899, USA
- Department of Physics, National Taiwan University, Taipei 10617, Taiwan
| | - Chieh-I Liu
- Physical Measurement Laboratory, National Institute of Standards and Technology (NIST), Gaithersburg, Maryland 20899, USA
- Department of Chemistry and Biochemistry, University of Maryland, College Park, Maryland 20742, USA
| | - Dipanjan Saha
- Physical Measurement Laboratory, National Institute of Standards and Technology (NIST), Gaithersburg, Maryland 20899, USA
| | - Shamith U. Payagala
- Physical Measurement Laboratory, National Institute of Standards and Technology (NIST), Gaithersburg, Maryland 20899, USA
| | - David B. Newell
- Physical Measurement Laboratory, National Institute of Standards and Technology (NIST), Gaithersburg, Maryland 20899, USA
| | - Dean G. Jarrett
- Physical Measurement Laboratory, National Institute of Standards and Technology (NIST), Gaithersburg, Maryland 20899, USA
| | - Chi-Te Liang
- Department of Physics, National Taiwan University, Taipei 10617, Taiwan
| | - Randolph E. Elmquist
- Physical Measurement Laboratory, National Institute of Standards and Technology (NIST), Gaithersburg, Maryland 20899, USA
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8
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Davis R, Schlamminger S. Basic Metrology for 2020. IEEE INSTRUMENTATION & MEASUREMENT MAGAZINE 2020; 23:10.1109/MIM.2020.9082793. [PMID: 34248348 PMCID: PMC8268802 DOI: 10.1109/mim.2020.9082793] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Affiliation(s)
- Richard Davis
- International Bureau of Weights and Measures (BIPM) in 1990 following eighteen years at NIST in Gaithersburg, Maryland
| | - Stephan Schlamminger
- Physicist at the National Institute of Standards and Technology in Gaithersburg, Maryland
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Payagala SU, Rigosi AF, Panna AR, Pollarolo A, Kruskopf M, Schlamminger S, Jarrett DG, Brown R, Elmquist RE, Brown D, Newell DB. Comparison between Graphene and GaAs Quantized Hall Devices with a Dual Probe. IEEE TRANSACTIONS ON INSTRUMENTATION AND MEASUREMENT 2020; 69:9374-9380. [PMID: 33335334 PMCID: PMC7739376 DOI: 10.1109/tim.2020.3004678] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
A graphene quantized Hall resistance (QHR) device fabricated at the National Institute of Standards and Technology (NIST) was measured alongside a GaAs QHR device fabricated by the National Research Council of Canada (NRC) by comparing them to a 1 kΩ standard resistor using a cryogenic current comparator. The two devices were mounted in a custom developed dual probe that was then assessed for its viability as a suitable apparatus for precision measurements. The charge carrier density of the graphene device exhibited controllable tunability when annealed after Cr(CO)3 functionalization. These initial measurement results suggest that making resistance comparisons is possible with a single probe wired for two types of quantum standards - GaAs, the established material, and graphene, the newer material that may promote the development of more user-friendly equipment.
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Affiliation(s)
- Shamith U Payagala
- National Institute of Standards and Technology, Gaithersburg, MD 20899, USA
| | - Albert F Rigosi
- National Institute of Standards and Technology, Gaithersburg, MD 20899, USA
| | - Alireza R Panna
- National Institute of Standards and Technology, Gaithersburg, MD 20899, USA
| | - Alessio Pollarolo
- Measurements International, Ltd., Prescott, Ontario, K0E 1T0, Canada
| | - Mattias Kruskopf
- Physikalisch-Technische Bundesanstalt, Braunschweig 38116, Germany
| | | | - Dean G Jarrett
- National Institute of Standards and Technology, Gaithersburg, MD 20899, USA
| | - Ryan Brown
- Measurements International, Ltd., Prescott, Ontario, K0E 1T0, Canada
| | | | - Duane Brown
- Measurements International, Ltd., Prescott, Ontario, K0E 1T0, Canada
| | - David B Newell
- National Institute of Standards and Technology, Gaithersburg, MD 20899, USA
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10
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Marzano M, Kruskopf M, Panna AR, Rigosi AF, Patel DK, Jin H, Cular S, Callegaro L, Elmquist RE, Ortolano M. Implementation of a graphene quantum Hall Kelvin bridge-on-a-chip for resistance calibrations. METROLOGIA 2020; 57:10.1088/1681-7575/ab581e. [PMID: 32127725 PMCID: PMC7053649 DOI: 10.1088/1681-7575/ab581e] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
The unique properties of the quantum Hall effect allow one to revisit traditional measurement circuits with a new flavour. In this paper we present the first realization of a quantum Hall Kelvin bridge for the calibration of standard resistors directly against the quantum Hall resistance. The bridge design is particularly simple and requires a minimal number of instruments. The implementation here proposed is based on the bridge-on-a-chip, an integrated circuit composed of three graphene quantum Hall elements and superconducting wiring. The accuracy achieved in the calibration of a 12 906Ω standard resistor is of a few parts in 108, at present mainly limited by the prototype device and the interferences in the current implementation, with the potential to achieve few parts in 109, which is the level of the systematic uncertainty of the quantum Hall Kelvin bridge itself.
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Affiliation(s)
- Martina Marzano
- Politecnico di Torino, Corso Duca degli Abruzzi 24, 10129 Torino, Italy
- INRIM - Istituto Nazionale di Ricerca Metrologica, Strada delle Cacce, 91, 10135 Torino, Italy
| | - Mattias Kruskopf
- University of Maryland, College Park, MD 20742, USA
- NIST - National Institute of Standards and Technology, Gaithersburg, MD 20899, USA
| | - Alireza R Panna
- NIST - National Institute of Standards and Technology, Gaithersburg, MD 20899, USA
| | - Albert F Rigosi
- NIST - National Institute of Standards and Technology, Gaithersburg, MD 20899, USA
| | | | - Hanbyul Jin
- University of Maryland, College Park, MD 20742, USA
| | - Stefan Cular
- NIST - National Institute of Standards and Technology, Gaithersburg, MD 20899, USA
| | - Luca Callegaro
- INRIM - Istituto Nazionale di Ricerca Metrologica, Strada delle Cacce, 91, 10135 Torino, Italy
| | - Randolph E Elmquist
- NIST - National Institute of Standards and Technology, Gaithersburg, MD 20899, USA
| | - Massimo Ortolano
- Politecnico di Torino, Corso Duca degli Abruzzi 24, 10129 Torino, Italy
- INRIM - Istituto Nazionale di Ricerca Metrologica, Strada delle Cacce, 91, 10135 Torino, Italy
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11
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Liu CI, Scaletta DS, Patel DK, Kruskopf M, Levy A, Hill HM, Rigosi AF. Analysing quantized resistance behaviour in graphene Corbino p-n junction devices. JOURNAL OF PHYSICS D: APPLIED PHYSICS 2020; 53:10.1088/1361-6463/ab83bb. [PMID: 32831402 PMCID: PMC7431976 DOI: 10.1088/1361-6463/ab83bb] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Just a few of the promising applications of graphene Corbino pnJ devices include two-dimensional Dirac fermion microscopes, custom programmable quantized resistors, and mesoscopic valley filters. In some cases, device scalability is crucial, as seen in fields like resistance metrology, where graphene devices are required to accommodate currents of the order 100 μA to be compatible with existing infrastructure. However, fabrication of these devices still poses many difficulties. In this work, unusual quantized resistances are observed in epitaxial graphene Corbino p-n junction devices held at the ν = 2 plateau (R H ≈ 12906 Ω) and agree with numerical simulations performed with the LTspice circuit simulator. The formulae describing experimental and simulated data are empirically derived for generalized placement of up to three current terminals and accurately reflects observed partial edge channel cancellation. These results support the use of ultraviolet lithography as a way to scale up graphene-based devices with suitably narrow junctions that could be applied in a variety of subfields.
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Affiliation(s)
- Chieh-I Liu
- Physical Measurement Laboratory, National Institute of Standards and Technology (NIST), Gaithersburg, MD 20899, United States
- Department of Chemistry and Biochemistry, University of Maryland, College Park, MD 20742, United States
| | - Dominick S Scaletta
- Department of Physics, Mount San Jacinto College, Menifee, CA 92584, United States
| | - Dinesh K Patel
- Physical Measurement Laboratory, National Institute of Standards and Technology (NIST), Gaithersburg, MD 20899, United States
- Department of Physics, National Taiwan University, Taipei 10617, Taiwan
| | - Mattias Kruskopf
- Physical Measurement Laboratory, National Institute of Standards and Technology (NIST), Gaithersburg, MD 20899, United States
- Joint Quantum Institute, University of Maryland, College Park, MD 20742, United States
- Electricity Division, Physikalisch-Technische Bundesanstalt, Braunschweig 38116, Germany
| | - Antonio Levy
- Physical Measurement Laboratory, National Institute of Standards and Technology (NIST), Gaithersburg, MD 20899, United States
| | - Heather M Hill
- Physical Measurement Laboratory, National Institute of Standards and Technology (NIST), Gaithersburg, MD 20899, United States
| | - Albert F Rigosi
- Physical Measurement Laboratory, National Institute of Standards and Technology (NIST), Gaithersburg, MD 20899, United States
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12
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Panna AR, Kruskopf M, Rigosi AF, Marzano M, Patel DK, Payagala SU, Jarrett DG, Newell DB, Elmquist RE. Superconducting Contact Geometries for Next-Generation Quantized Hall Resistance Standards. IEEE TRANSACTIONS ON INSTRUMENTATION AND MEASUREMENT 2020; 1.633481E6:10.1109/CPEM49742.2020.9191753. [PMID: 33335333 PMCID: PMC7739517 DOI: 10.1109/cpem49742.2020.9191753] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Precision quantum Hall resistance measurements can be greatly improved when implementing new electrical contact geometries made from superconducting NbTiN. The sample designs described here minimize undesired resistances at contacts and interconnections, enabling further enhancement of device size and complexity when pursuing next-generation quantized Hall resistance devices.
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Affiliation(s)
- Alireza R Panna
- National Institute of Standards and Technology, 100 Bureau Drive, Stop 8171, Gaithersburg, MD, 20899, USA
| | - Mattias Kruskopf
- National Institute of Standards and Technology, 100 Bureau Drive, Stop 8171, Gaithersburg, MD, 20899, USA
- Physikalisch-Technische Bundesanstalt, Department of Electrical Quantum Metrology, Braunschweig, 38116, Germany
| | - Albert F Rigosi
- National Institute of Standards and Technology, 100 Bureau Drive, Stop 8171, Gaithersburg, MD, 20899, USA
| | - Martina Marzano
- National Institute of Standards and Technology, 100 Bureau Drive, Stop 8171, Gaithersburg, MD, 20899, USA
- Istituto Nazionale Di Ricerca Metrologica, Torino 10135, Italy
| | - Dinesh K Patel
- National Institute of Standards and Technology, 100 Bureau Drive, Stop 8171, Gaithersburg, MD, 20899, USA
| | - Shamith U Payagala
- National Institute of Standards and Technology, 100 Bureau Drive, Stop 8171, Gaithersburg, MD, 20899, USA
| | - Dean G Jarrett
- National Institute of Standards and Technology, 100 Bureau Drive, Stop 8171, Gaithersburg, MD, 20899, USA
| | - David B Newell
- National Institute of Standards and Technology, 100 Bureau Drive, Stop 8171, Gaithersburg, MD, 20899, USA
| | - Randolph E Elmquist
- National Institute of Standards and Technology, 100 Bureau Drive, Stop 8171, Gaithersburg, MD, 20899, USA
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Rigosi AF, Patel D, Marzano M, Kruskopf M, Hill HM, Jin H, Hu J, Walker ARH, Ortolano M, Callegaro L, Liang CT, Newell DB. Atypical Quantized Resistances in Millimeter-Scale Epitaxial Graphene p-n Junctions. CARBON 2019; 154:10.1016/j.carbon.2019.08.002. [PMID: 32165760 PMCID: PMC7067286 DOI: 10.1016/j.carbon.2019.08.002] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/29/2023]
Abstract
We have demonstrated the millimeter-scale fabrication of monolayer epitaxial graphene p-n junction devices using simple ultraviolet photolithography, thereby significantly reducing device processing time compared to that of electron beam lithography typically used for obtaining sharp junctions. This work presents measurements yielding nonconventional, fractional multiples of the typical quantized Hall resistance at ν = 2 (R H ≈ 12906 Ω) that take the form:a b R H . Here, a and b have been observed to take on values such 1, 2, 3, and 5 to form various coefficients of R H. Additionally, we provide a framework for exploring future device configurations using the LTspice circuit simulator as a guide to understand the abundance of available fractions one may be able to measure. These results support the potential for drastically simplifying device processing time and may be used for many other two-dimensional materials.
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Affiliation(s)
- Albert F. Rigosi
- National Institute of Standards and Technology (NIST), Gaithersburg, MD 20899, USA
| | - Dinesh Patel
- National Institute of Standards and Technology (NIST), Gaithersburg, MD 20899, USA
- Department of Physics, National Taiwan University, Taipei 10617, Taiwan
| | - Martina Marzano
- National Institute of Standards and Technology (NIST), Gaithersburg, MD 20899, USA
- Department of Electronics and Telecommunications, Politecnico di Torino, Torino 10129, Italy
- Istituto Nazionale di Ricerca Metrologica, Torino 10135, Italy
| | - Mattias Kruskopf
- National Institute of Standards and Technology (NIST), Gaithersburg, MD 20899, USA
- Joint Quantum Institute, University of Maryland, College Park, MD 20742, USA
| | - Heather M. Hill
- National Institute of Standards and Technology (NIST), Gaithersburg, MD 20899, USA
| | - Hanbyul Jin
- National Institute of Standards and Technology (NIST), Gaithersburg, MD 20899, USA
- Joint Quantum Institute, University of Maryland, College Park, MD 20742, USA
| | - Jiuning Hu
- National Institute of Standards and Technology (NIST), Gaithersburg, MD 20899, USA
- Joint Quantum Institute, University of Maryland, College Park, MD 20742, USA
| | | | - Massimo Ortolano
- Department of Electronics and Telecommunications, Politecnico di Torino, Torino 10129, Italy
| | - Luca Callegaro
- Istituto Nazionale di Ricerca Metrologica, Torino 10135, Italy
| | - Chi-Te Liang
- Department of Physics, National Taiwan University, Taipei 10617, Taiwan
| | - David B. Newell
- National Institute of Standards and Technology (NIST), Gaithersburg, MD 20899, USA
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