1
|
Qin Y, Guo H, Pazos S, Xu M, Yan X, Qiao J, Wang J, Zhou P, Chai Y, Hu W, Zhu Z, Li Z, Wen H, Ma Z, Li X, Lanza M, Tang J, Tian H, Liu J. 7D High-Dynamic Spin-Multiplexing. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2024:e2402378. [PMID: 38940415 DOI: 10.1002/advs.202402378] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/05/2024] [Revised: 05/31/2024] [Indexed: 06/29/2024]
Abstract
Multiplexing technology creates several orthogonal data channels and dimensions for high-density information encoding and is irreplaceable in large-capacity information storage, and communication, etc. The multiplexing dimensions are constructed by light attributes and spatial dimensions. However, limited by the degree of freedom of interaction between light and material structure parameters, the multiplexing dimension exploitation method is still confused. Herein, a 7D Spin-multiplexing technique is proposed. Spin structures with four independent attributes (color center type, spin axis, spatial distribution, and dipole direction) are constructed as coding basic units. Based on the four independent spin physical effects, the corresponding photoluminescence wavelength, magnetic field, microwave, and polarization are created into four orthogonal multiplexing dimensions. Combined with the 3D of space, a 7D multiplexing method is established, which possesses the highest dimension number compared with 6 dimensions in the previous study. The basic spin unit is prepared by a self-developed laser-induced manufacturing process. The free state information of spin is read out by four physical quantities. Based on the multiple dimensions, the information is highly dynamically multiplexed to enhance information storage efficiency. Moreover, the high-dynamic in situ image encryption/marking is demonstrated. It implies a new paradigm for ultra-high-capacity storage and real-time encryption.
Collapse
Affiliation(s)
- Yue Qin
- State Key Laboratory of Dynamic Measurement Technology, Shanxi Province Key Laboratory of Quantum Sensing and Precision Measurement, North University of China, Taiyuan, 030051, P. R. China
| | - Hao Guo
- State Key Laboratory of Dynamic Measurement Technology, Shanxi Province Key Laboratory of Quantum Sensing and Precision Measurement, North University of China, Taiyuan, 030051, P. R. China
| | - Sebastian Pazos
- Materials Science and Engineering Program, Physical Science and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia
| | - Mengzhen Xu
- State Key Laboratory of Hydroscience and Engineering, Tsinghua University, Beijing, 100084, China
| | - Xiaobing Yan
- National-Local Joint Engineering Laboratory of New Energy Photovoltaic Devices, Key Laboratory of Brain-Like Neuromorphic Devices and Systems of Hebei Province, College of Electron and Information Engineering, Hebei University, Baoding, 071002, China
| | - Jianzhong Qiao
- School of Automation Science and Electrical Engineering, Beihang University, Beijing, 100191, China
| | - Jia Wang
- State Key Laboratory of Dynamic Measurement Technology, Shanxi Province Key Laboratory of Quantum Sensing and Precision Measurement, North University of China, Taiyuan, 030051, P. R. China
| | - Peng Zhou
- State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai, 200433, China
| | - Yang Chai
- Department of Applied Physics, The Hong Kong Polytechnic University, Hong Kong, 999077, China
| | - Weida Hu
- State Key Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China
| | - Zhengqiang Zhu
- School of Integrated Circuits and Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing, 100084, China
- Beijing Institute of Aerospace Control Devices, Beijing, 100094, China
| | - Zhonghao Li
- State Key Laboratory of Dynamic Measurement Technology, Shanxi Province Key Laboratory of Quantum Sensing and Precision Measurement, North University of China, Taiyuan, 030051, P. R. China
| | - Huanfei Wen
- State Key Laboratory of Dynamic Measurement Technology, Shanxi Province Key Laboratory of Quantum Sensing and Precision Measurement, North University of China, Taiyuan, 030051, P. R. China
| | - Zongmin Ma
- State Key Laboratory of Dynamic Measurement Technology, Shanxi Province Key Laboratory of Quantum Sensing and Precision Measurement, North University of China, Taiyuan, 030051, P. R. China
| | - Xin Li
- State Key Laboratory of Dynamic Measurement Technology, Shanxi Province Key Laboratory of Quantum Sensing and Precision Measurement, North University of China, Taiyuan, 030051, P. R. China
| | - Mario Lanza
- Materials Science and Engineering Program, Physical Science and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia
| | - Jun Tang
- State Key Laboratory of Dynamic Measurement Technology, Shanxi Province Key Laboratory of Quantum Sensing and Precision Measurement, North University of China, Taiyuan, 030051, P. R. China
| | - He Tian
- School of Integrated Circuits and Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing, 100084, China
| | - Jun Liu
- State Key Laboratory of Dynamic Measurement Technology, Shanxi Province Key Laboratory of Quantum Sensing and Precision Measurement, North University of China, Taiyuan, 030051, P. R. China
| |
Collapse
|
2
|
Luo J, Geng Y, Rana F, Fuchs GD. Room temperature optically detected magnetic resonance of single spins in GaN. NATURE MATERIALS 2024; 23:512-518. [PMID: 38347119 DOI: 10.1038/s41563-024-01803-5] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/21/2023] [Accepted: 01/09/2024] [Indexed: 03/14/2024]
Abstract
High-contrast optically detected magnetic resonance is a valuable property for reading out the spin of isolated defect colour centres at room temperature. Spin-active single defect centres have been studied in wide bandgap materials including diamond, SiC and hexagonal boron nitride, each with associated advantages for applications. We report the discovery of optically detected magnetic resonance in two distinct species of bright, isolated defect centres hosted in GaN. In one group, we find negative optically detected magnetic resonance of a few percent associated with a metastable electronic state, whereas in the other, we find positive optically detected magnetic resonance of up to 30% associated with the ground and optically excited electronic states. We examine the spin symmetry axis of each defect species and establish coherent control over a single defect's ground-state spin. Given the maturity of the semiconductor host, these results are promising for scalable and integrated quantum sensing applications.
Collapse
Affiliation(s)
- Jialun Luo
- Department of Physics, Cornell University, Ithaca, NY, USA
| | - Yifei Geng
- School of Electrical and Computer Engineering, Cornell University, Ithaca, NY, USA
| | - Farhan Rana
- School of Electrical and Computer Engineering, Cornell University, Ithaca, NY, USA
| | - Gregory D Fuchs
- School of Applied and Engineering Physics, Cornell University, Ithaca, NY, USA.
- Kavli Institute at Cornell for Nanoscale Science, Cornell University, Ithaca, NY, USA.
| |
Collapse
|
3
|
Xu JS, Li CF. Identifying single spin defects in gallium nitride. NATURE MATERIALS 2024; 23:447-448. [PMID: 38570635 DOI: 10.1038/s41563-024-01841-z] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/05/2024]
Affiliation(s)
- Jin-Shi Xu
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, China.
- CAS Center For Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, China.
- Hefei National Laboratory, University of Science and Technology of China, Hefei, China.
| | - Chuan-Feng Li
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, China.
- CAS Center For Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, China.
- Hefei National Laboratory, University of Science and Technology of China, Hefei, China.
| |
Collapse
|
4
|
Castelletto S, Lew CTK, Lin WX, Xu JS. Quantum systems in silicon carbide for sensing applications. REPORTS ON PROGRESS IN PHYSICS. PHYSICAL SOCIETY (GREAT BRITAIN) 2023; 87:014501. [PMID: 38029424 DOI: 10.1088/1361-6633/ad10b3] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/26/2023] [Accepted: 11/29/2023] [Indexed: 12/01/2023]
Abstract
This paper summarizes recent studies identifying key qubit systems in silicon carbide (SiC) for quantum sensing of magnetic, electric fields, and temperature at the nano and microscale. The properties of colour centres in SiC, that can be used for quantum sensing, are reviewed with a focus on paramagnetic colour centres and their spin Hamiltonians describing Zeeman splitting, Stark effect, and hyperfine interactions. These properties are then mapped onto various methods for their initialization, control, and read-out. We then summarised methods used for a spin and charge state control in various colour centres in SiC. These properties and methods are then described in the context of quantum sensing applications in magnetometry, thermometry, and electrometry. Current state-of-the art sensitivities are compiled and approaches to enhance the sensitivity are proposed. The large variety of methods for control and read-out, combined with the ability to scale this material in integrated photonics chips operating in harsh environments, places SiC at the forefront of future quantum sensing technology based on semiconductors.
Collapse
Affiliation(s)
- S Castelletto
- School of Engineering, RMIT University, Melbourne, Victoria 3001, Australia
| | - C T-K Lew
- School of Physics, The University of Melbourne, Melbourne, Victoria 3010, Australia
| | - Wu-Xi Lin
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China
- CAS Center For Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China
- Hefei National Laboratory, University of Science and Technology of China, Hefei, Anhui 230088, People's Republic of China
| | - Jin-Shi Xu
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China
- CAS Center For Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China
- Hefei National Laboratory, University of Science and Technology of China, Hefei, Anhui 230088, People's Republic of China
| |
Collapse
|
5
|
Jin Y, Yu VWZ, Govoni M, Xu AC, Galli G. Excited State Properties of Point Defects in Semiconductors and Insulators Investigated with Time-Dependent Density Functional Theory. J Chem Theory Comput 2023. [PMID: 38039161 DOI: 10.1021/acs.jctc.3c00986] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/03/2023]
Abstract
We present a formulation of spin-conserving and spin-flip hybrid time-dependent density functional theory (TDDFT), including the calculation of analytical forces, which allows for efficient calculations of excited state properties of solid-state systems with hundreds to thousands of atoms. We discuss an implementation on both GPU- and CPU-based architectures along with several acceleration techniques. We then apply our formulation to the study of several point defects in semiconductors and insulators, specifically the negatively charged nitrogen-vacancy and neutral silicon-vacancy centers in diamond, the neutral divacancy center in 4H silicon carbide, and the neutral oxygen-vacancy center in magnesium oxide. Our results highlight the importance of taking into account structural relaxations in excited states in order to interpret and predict optical absorption and emission mechanisms in spin defects.
Collapse
Affiliation(s)
- Yu Jin
- Department of Chemistry, University of Chicago, Chicago, Illinois 60637, United States
| | - Victor Wen-Zhe Yu
- Materials Science Division, Argonne National Laboratory, Lemont, Illinois 60439, United States
| | - Marco Govoni
- Materials Science Division, Argonne National Laboratory, Lemont, Illinois 60439, United States
- Department of Physics, Computer Science, and Mathematics, University of Modena and Reggio Emilia, Modena 41125, Italy
- Pritzker School of Molecular Engineering, University of Chicago, Chicago, Illinois 60637, United States
| | - Andrew C Xu
- Pritzker School of Molecular Engineering, University of Chicago, Chicago, Illinois 60637, United States
| | - Giulia Galli
- Department of Chemistry, University of Chicago, Chicago, Illinois 60637, United States
- Materials Science Division, Argonne National Laboratory, Lemont, Illinois 60439, United States
- Pritzker School of Molecular Engineering, University of Chicago, Chicago, Illinois 60637, United States
| |
Collapse
|
6
|
Zhang C, Gygi F, Galli G. Engineering the formation of spin-defects from first principles. Nat Commun 2023; 14:5985. [PMID: 37752139 PMCID: PMC10522650 DOI: 10.1038/s41467-023-41632-9] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/24/2023] [Accepted: 09/08/2023] [Indexed: 09/28/2023] Open
Abstract
The full realization of spin qubits for quantum technologies relies on the ability to control and design the formation processes of spin defects in semiconductors and insulators. We present a computational protocol to investigate the synthesis of point-defects at the atomistic level, and we apply it to the study of a promising spin-qubit in silicon carbide, the divacancy (VV). Our strategy combines electronic structure calculations based on density functional theory and enhanced sampling techniques coupled with first principles molecular dynamics. We predict the optimal annealing temperatures for the formation of VVs at high temperature and show how to engineer the Fermi level of the material to optimize the defect's yield for several polytypes of silicon carbide. Our results are in excellent agreement with available experimental data and provide novel atomistic insights into point defect formation and annihilation processes as a function of temperature.
Collapse
Affiliation(s)
- Cunzhi Zhang
- Pritzker School of Molecular Engineering, University of Chicago, Chicago, IL, USA
| | - Francois Gygi
- Department of Computer Science, University of California Davis, Davis, CA, USA
| | - Giulia Galli
- Pritzker School of Molecular Engineering, University of Chicago, Chicago, IL, USA.
- Department of Chemistry, University of Chicago, Chicago, IL, USA.
- Materials Science Division and Center for Molecular Engineering, Argonne National Laboratory, Lemont, IL, USA.
| |
Collapse
|
7
|
Zeng XD, Yang YZ, Guo NJ, Li ZP, Wang ZA, Xie LK, Yu S, Meng Y, Li Q, Xu JS, Liu W, Wang YT, Tang JS, Li CF, Guo GC. Reflective dielectric cavity enhanced emission from hexagonal boron nitride spin defect arrays. NANOSCALE 2023; 15:15000-15007. [PMID: 37665054 DOI: 10.1039/d3nr03486k] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 09/05/2023]
Abstract
Among the various kinds of spin defects in hexagonal boron nitride (hBN), the negatively charged boron vacancy (VB-) spin defect that can be site-specifically generated is undoubtedly a potential candidate for quantum sensing, but its low quantum efficiency restricts its practical applications. Here, we demonstrate a robust enhancement structure called reflective dielectric cavity (RDC) with advantages including easy on-chip integration, convenient processing, low cost and suitable broad-spectrum enhancement for VB- defects. In the experiment, we used a metal reflective layer under the hBN flakes, filled with a transition dielectric layer in the middle, and adjusted the thickness of the dielectric layer to achieve the best coupling between RDC and spin defects in hBN. A remarkable 11-fold enhancement in the fluorescence intensity of VB- spin defects in hBN flakes can be achieved. By designing the metal layer into a waveguide structure, high-contrast optically detected magnetic resonance (ODMR) signal (∼21%) can be obtained. The oxide layer of the RDC can be used as the integrated material to implement secondary processing of micro-nano photonic devices, which means that it can be combined with other enhancement structures to achieve stronger enhancement. This work has guiding significance for realizing the on-chip integration of spin defects in two-dimensional materials.
Collapse
Affiliation(s)
- Xiao-Dong Zeng
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, Anhui 230026, China.
- CAS Center For Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Yuan-Ze Yang
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, Anhui 230026, China.
- CAS Center For Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Nai-Jie Guo
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, Anhui 230026, China.
- CAS Center For Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Zhi-Peng Li
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, Anhui 230026, China.
- CAS Center For Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Zhao-An Wang
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, Anhui 230026, China.
- CAS Center For Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Lin-Ke Xie
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, Anhui 230026, China.
- CAS Center For Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Shang Yu
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, Anhui 230026, China.
- CAS Center For Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Yu Meng
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, Anhui 230026, China.
- CAS Center For Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Qiang Li
- Institute of Advanced Semiconductors and Zhejiang Provincial Key Laboratory of Power Semiconductor Materials and Devices, ZJU-Hangzhou Global Scientific and Technological Innovation Center, Hangzhou, Zhejiang 311200, China
- State Key Laboratory of Silicon Materials and Advanced Semiconductors and School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China
| | - Jin-Shi Xu
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, Anhui 230026, China.
- CAS Center For Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, China
- Hefei National Laboratory, University of Science and Technology of China, Hefei, Anhui 230088, China
| | - Wei Liu
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, Anhui 230026, China.
- CAS Center For Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Yi-Tao Wang
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, Anhui 230026, China.
- CAS Center For Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Jian-Shun Tang
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, Anhui 230026, China.
- CAS Center For Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, China
- Hefei National Laboratory, University of Science and Technology of China, Hefei, Anhui 230088, China
| | - Chuan-Feng Li
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, Anhui 230026, China.
- CAS Center For Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, China
- Hefei National Laboratory, University of Science and Technology of China, Hefei, Anhui 230088, China
| | - Guang-Can Guo
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, Anhui 230026, China.
- CAS Center For Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, China
- Hefei National Laboratory, University of Science and Technology of China, Hefei, Anhui 230088, China
| |
Collapse
|
8
|
Quan WK, Liu L, Luo QY, Liu XD, Wang JF. Fiber-coupled silicon carbide divacancy magnetometer and thermometer. OPTICS EXPRESS 2023; 31:15592-15598. [PMID: 37157657 DOI: 10.1364/oe.483411] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/10/2023]
Abstract
Divacancy in silicon carbide has become an important solid-state system for quantum metrologies. To make it more beneficial for practical applications, we realize a fiber-coupled divacancy-based magnetometer and thermometer simultaneously. First, we realize an efficient coupling between the divacancy in a silicon carbide slice with a multimode fiber. Then the optimization of the power broadening in optically detected magnetic resonance (ODMR) of divacancy is performed to obtain a higher sensing sensitivity of 3.9 μT/Hz1/2. We then use it to detect the strength of an external magnetic field. Finally, we use the Ramsey methods to realize a temperature sensing with a sensitivity of 163.2 mK/Hz1/2. The experiments demonstrate that the compact fiber-coupled divacancy quantum sensor can be used for multiple practical quantum sensing.
Collapse
|
9
|
Zhou JY, Li Q, Hao ZH, Lin WX, He ZX, Liang RJ, Guo L, Li H, You L, Tang JS, Xu JS, Li CF, Guo GC. Plasmonic-Enhanced Bright Single Spin Defects in Silicon Carbide Membranes. NANO LETTERS 2023; 23:4334-4343. [PMID: 37155148 DOI: 10.1021/acs.nanolett.3c00568] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/10/2023]
Abstract
Optically addressable spin defects in silicon carbide (SiC) have emerged as attractable platforms for various quantum technologies. However, the low photon count rate significantly limits their applications. We strongly enhanced the brightness by 7 times and spin-control strength by 14 times of single divacancy defects in 4H-SiC membranes using a surface plasmon generated by gold film coplanar waveguides. The mechanism of the plasmonic-enhanced effect is further studied by tuning the distance between single defects and the surface of the gold film. A three-energy-level model is used to determine the corresponding transition rates consistent with the enhanced brightness of single defects. Lifetime measurements also verified the coupling between defects and surface plasmons. Our scheme is low-cost, without complicated microfabrication and delicate structures, which is applicable for other spin defects in different materials. This work would promote developing spin-defect-based quantum applications in mature SiC materials.
Collapse
Affiliation(s)
- Ji-Yang Zhou
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei 230026, China
- CAS Center for Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei 230026, China
| | - Qiang Li
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei 230026, China
- CAS Center for Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei 230026, China
| | - Zhi-He Hao
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei 230026, China
- CAS Center for Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei 230026, China
| | - Wu-Xi Lin
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei 230026, China
- CAS Center for Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei 230026, China
- Hefei National Laboratory, University of Science and Technology of China, Hefei 230088, China
| | - Zhen-Xuan He
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei 230026, China
- CAS Center for Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei 230026, China
| | - Rui-Jian Liang
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei 230026, China
| | - Liping Guo
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan 430072, China
| | - Hao Li
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 20050, China
| | - Lixing You
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 20050, China
| | - Jian-Shun Tang
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei 230026, China
- CAS Center for Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei 230026, China
- Hefei National Laboratory, University of Science and Technology of China, Hefei 230088, China
| | - Jin-Shi Xu
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei 230026, China
- CAS Center for Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei 230026, China
- Hefei National Laboratory, University of Science and Technology of China, Hefei 230088, China
| | - Chuan-Feng Li
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei 230026, China
- CAS Center for Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei 230026, China
- Hefei National Laboratory, University of Science and Technology of China, Hefei 230088, China
| | - Guang-Can Guo
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei 230026, China
- CAS Center for Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei 230026, China
- Hefei National Laboratory, University of Science and Technology of China, Hefei 230088, China
| |
Collapse
|
10
|
Luo QY, Zhao S, Hu QC, Quan WK, Zhu ZQ, Li JJ, Wang JF. High-sensitivity silicon carbide divacancy-based temperature sensing. NANOSCALE 2023; 15:8432-8436. [PMID: 37093058 DOI: 10.1039/d3nr00430a] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/03/2023]
Abstract
Color centers in silicon carbide have become potentially versatile quantum sensors. Particularly, wide temperature-range temperature sensing has been realized in recent years. However, the sensitivity is limited due to the short dephasing time of the color centers. In this work, we developed a high-sensitivity silicon carbide divacancy-based thermometer using the thermal Carr-Purcell-Meiboom-Gill (TCPMG) method. First, the zero-field splitting D of the PL6 divacancy as a function of temperature was measured with a linear slope of -99.7 kHz K-1. The coherence times of TCPMG pulses linearly increased with the pulse number and the longest coherence time was about 21 μs, which was ten times higher than . The corresponding temperature-sensing sensitivity was 13.4 mK Hz-1/2, which was about 15 times higher than previous results. Finally, we monitored the laboratory temperature variations for 24 hours using the TCMPG pulse. The experiments pave the way for the application of silicon carbide-based high-sensitivity thermometers in the semiconductor industry, biology, and materials sciences.
Collapse
Affiliation(s)
- Qin-Yue Luo
- College of Physics, Sichuan University, Chengdu 610065, People's Republic of China.
| | - Shuang Zhao
- College of Physics, Sichuan University, Chengdu 610065, People's Republic of China.
| | - Qi-Cheng Hu
- College of Physics, Sichuan University, Chengdu 610065, People's Republic of China.
| | - Wei-Ke Quan
- College of Physics, Sichuan University, Chengdu 610065, People's Republic of China.
| | - Zi-Qi Zhu
- College of Physics, Sichuan University, Chengdu 610065, People's Republic of China.
| | - Jia-Jun Li
- College of Physics, Sichuan University, Chengdu 610065, People's Republic of China.
| | - Jun-Feng Wang
- College of Physics, Sichuan University, Chengdu 610065, People's Republic of China.
| |
Collapse
|
11
|
Yan FF, Wang JF, He ZX, Li Q, Lin WX, Zhou JY, Xu JS, Li CF, Guo GC. Magnetic-field-dependent spin properties of divacancy defects in silicon carbide. NANOSCALE 2023; 15:5300-5304. [PMID: 36810581 DOI: 10.1039/d2nr06624f] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
In recent years, spin defects in silicon carbide have become promising platforms for quantum sensing, quantum information processing and quantum networks. It has been shown that their spin coherence times can be dramatically extended with an external axial magnetic field. However, little is known about the effect of magnetic-angle-dependent coherence time, which is an essential complement to defect spin properties. Here, we investigate the optically detected magnetic resonance (ODMR) spectra of divacancy spins in silicon carbide with a magnetic field orientation. The ODMR contrast decreases as the off-axis magnetic field strength increases. We then study the coherence times of divacancy spins in two different samples with magnetic field angles, and both of the coherence times decrease with the angle. The experiments pave the way for all-optical magnetic field sensing and quantum information processing.
Collapse
Affiliation(s)
- Fei-Fei Yan
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei 230026, China.
- Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei 230026, China
| | - Jun-Feng Wang
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei 230026, China.
- College of Physics, Sichuan University, Chengdu, Sichuan 610065, China
- Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei 230026, China
| | - Zhen-Xuan He
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei 230026, China.
- Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei 230026, China
| | - Qiang Li
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei 230026, China.
- Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei 230026, China
| | - Wu-Xi Lin
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei 230026, China.
- Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei 230026, China
| | - Ji-Yang Zhou
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei 230026, China.
- Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei 230026, China
| | - Jin-Shi Xu
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei 230026, China.
- Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei 230026, China
- Hefei National Laboratory, University of Science and Technology of China, Hefei 230088, China
| | - Chuan-Feng Li
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei 230026, China.
- Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei 230026, China
- Hefei National Laboratory, University of Science and Technology of China, Hefei 230088, China
| | - Guang-Can Guo
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei 230026, China.
- Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei 230026, China
- Hefei National Laboratory, University of Science and Technology of China, Hefei 230088, China
| |
Collapse
|
12
|
Quan WK, Liu L, Luo QY, Liu XD, Wang JF. Fiber-integrated silicon carbide silicon-vacancy-based magnetometer. OPTICS LETTERS 2023; 48:1423-1426. [PMID: 36946943 DOI: 10.1364/ol.476305] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/30/2022] [Accepted: 02/07/2023] [Indexed: 06/18/2023]
Abstract
Silicon vacancies in silicon carbide have drawn much attention for various types of quantum sensing. However, most previous experiments are realized using confocal scanning systems, which limits their practical applications. In this work, we demonstrate a compact fiber-integrated silicon carbide silicon-vacancy-based magnetometer at room temperature. First, we effectively couple the silicon vacancy in a tiny silicon carbide slice with an optical fiber tip and realize the readout of the spin signal through the fiber at the same time. We then study the optically detected magnetic resonance spectra at different laser and microwave powers, obtaining an optimized magnetic field sensitivity of 12.3 μT/Hz 12. Based on this, the magnetometer is used to measure the strength and polar angle of an external magnetic field. Through these experiments, we have paved the way for fiber-integrated silicon-vacancy-based magnetometer applications in practical environments, such as geophysics and biomedical sensing.
Collapse
|
13
|
Inam FA, Castelletto S. Metal-Dielectric Nanopillar Antenna-Resonators for Efficient Collected Photon Rate from Silicon Carbide Color Centers. NANOMATERIALS (BASEL, SWITZERLAND) 2023; 13:195. [PMID: 36616105 PMCID: PMC9824870 DOI: 10.3390/nano13010195] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 11/08/2022] [Revised: 12/25/2022] [Accepted: 12/28/2022] [Indexed: 06/17/2023]
Abstract
A yet unresolved challenge in developing quantum technologies based on color centres in high refractive index semiconductors is the efficient fluorescence enhancement of point defects in bulk materials. Optical resonators and antennas have been designed to provide directional emission, spontaneous emission rate enhancement and collection efficiency enhancement at the same time. While collection efficiency enhancement can be achieved by individual nanopillars or nanowires, fluorescent emission enhancement is achieved using nanoresonators or nanoantennas. In this work, we optimise the design of a metal-dielectric nanopillar-based antenna/resonator fabricated in a silicon carbide (SiC) substrate with integrated quantum emitters. Here we consider various color centres known in SiC such as silicon mono-vacancy and the carbon antisite vacancy pair, that show single photon emission and quantum sensing functionalities with optical electron spin read-out, respectively. We model the dipole emission fluorescence rate of these color centres into the metal-dielectric nanopillar hybrid antenna resonator using multi-polar electromagnetic scattering resonances and near-field plasmonic field enhancement and confinement. We calculate the fluorescence collected photon rate enhancement for these solid state vacancy-centers in SiC in these metal-dielectric nanopillar resonators, showing a trade-off effect between the collection efficiency and radiative Purcell factor enhancement. We obtained a collected photon rate enhancement from a silicon monovacancy vacancy center embedded in an optimised hybrid antenna-resonator two orders of magnitude larger compared to the case of the color centres in bulk material.
Collapse
Affiliation(s)
- Faraz Ahmed Inam
- Department of Physics, Aligarh Muslim University, Aligarh 20002, India
| | | |
Collapse
|
14
|
Liu L, Wang JF, Liu XD, Xu HA, Cui JM, Li Q, Zhou JY, Lin WX, He ZX, Xu W, Wei Y, Liu ZH, Wang P, Hao ZH, Ding JF, Li HO, Liu W, Li H, You L, Xu JS, Gregoryanz E, Li CF, Guo GC. Coherent Control and Magnetic Detection of Divacancy Spins in Silicon Carbide at High Pressures. NANO LETTERS 2022; 22:9943-9950. [PMID: 36507869 DOI: 10.1021/acs.nanolett.2c03378] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
Spin defects in silicon carbide appear to be a promising tool for various quantum technologies, especially for quantum sensing. However, this technique has been used only at ambient pressure until now. Here, by combining this technique with diamond anvil cell, we systematically study the optical and spin properties of divacancy defects created at the surface of SiC at pressures up to 40 GPa. The zero-field-splitting of the divacancy spins increases linearly with pressure with a slope of 25.1 MHz/GPa, which is almost two-times larger than that of nitrogen-vacancy centers in diamond. The corresponding pressure sensing sensitivity is about 0.28 MPa/Hz-1/2. The coherent control of divacancy demonstrates that coherence time decreases as pressure increases. Based on these, the pressure-induced magnetic phase transition of Nd2Fe14B sample at high pressures was detected. These experiments pave the way to use divacancy in quantum technologies such as pressure sensing and magnetic detection at high pressures.
Collapse
Affiliation(s)
- Lin Liu
- Key Laboratory of Materials Physics, Institute of Solid State Physics, HFIPS, Chinese Academy of Sciences, Hefei230031, China
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei230026, China
| | - Jun-Feng Wang
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei230026, China
- College of Physics, Sichuan University, Chengdu, Sichuan610065, China
- CAS Center for Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei230026, China
| | - Xiao-Di Liu
- Key Laboratory of Materials Physics, Institute of Solid State Physics, HFIPS, Chinese Academy of Sciences, Hefei230031, China
| | - Hai-An Xu
- Key Laboratory of Materials Physics, Institute of Solid State Physics, HFIPS, Chinese Academy of Sciences, Hefei230031, China
| | - Jin-Ming Cui
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei230026, China
- CAS Center for Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei230026, China
- Hefei National Laboratory, University of Science and Technology of China, Hefei230088, China
| | - Qiang Li
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei230026, China
- CAS Center for Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei230026, China
| | - Ji-Yang Zhou
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei230026, China
- CAS Center for Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei230026, China
| | - Wu-Xi Lin
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei230026, China
- CAS Center for Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei230026, China
| | - Zhen-Xuan He
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei230026, China
- CAS Center for Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei230026, China
| | - Wan Xu
- Key Laboratory of Materials Physics, Institute of Solid State Physics, HFIPS, Chinese Academy of Sciences, Hefei230031, China
| | - Yu Wei
- Center for Micro- and Nanoscale Research and Fabrication, University of Science and Technology of China, Hefei, Anhui230027, China
| | - Zheng-Hao Liu
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei230026, China
- CAS Center for Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei230026, China
| | - Pu Wang
- Key Laboratory of Materials Physics, Institute of Solid State Physics, HFIPS, Chinese Academy of Sciences, Hefei230031, China
| | - Zhi-He Hao
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei230026, China
- CAS Center for Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei230026, China
| | - Jun-Feng Ding
- Key Laboratory of Materials Physics, Institute of Solid State Physics, HFIPS, Chinese Academy of Sciences, Hefei230031, China
| | - Hai-Ou Li
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei230026, China
- CAS Center for Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei230026, China
- Hefei National Laboratory, University of Science and Technology of China, Hefei230088, China
| | - Wen Liu
- Hefei National Laboratory, University of Science and Technology of China, Hefei230088, China
| | - Hao Li
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai200050, China
| | - Lixing You
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai200050, China
| | - Jin-Shi Xu
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei230026, China
- CAS Center for Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei230026, China
- Hefei National Laboratory, University of Science and Technology of China, Hefei230088, China
| | - Eugene Gregoryanz
- Key Laboratory of Materials Physics, Institute of Solid State Physics, HFIPS, Chinese Academy of Sciences, Hefei230031, China
- Centre for Science at Extreme Conditions, School of Physics and Astronomy, University of Edinburgh, EdinburghEH9 3FD, U.K
| | - Chuan-Feng Li
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei230026, China
- CAS Center for Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei230026, China
- Hefei National Laboratory, University of Science and Technology of China, Hefei230088, China
| | - Guang-Can Guo
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei230026, China
- CAS Center for Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei230026, China
- Hefei National Laboratory, University of Science and Technology of China, Hefei230088, China
| |
Collapse
|
15
|
Liu W, Ivády V, Li ZP, Yang YZ, Yu S, Meng Y, Wang ZA, Guo NJ, Yan FF, Li Q, Wang JF, Xu JS, Liu X, Zhou ZQ, Dong Y, Chen XD, Sun FW, Wang YT, Tang JS, Gali A, Li CF, Guo GC. Coherent dynamics of multi-spin V[Formula: see text] center in hexagonal boron nitride. Nat Commun 2022; 13:5713. [PMID: 36175507 PMCID: PMC9522675 DOI: 10.1038/s41467-022-33399-2] [Citation(s) in RCA: 8] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/03/2021] [Accepted: 09/14/2022] [Indexed: 11/09/2022] Open
Abstract
Hexagonal boron nitride (hBN) has recently been demonstrated to contain optically polarized and detected electron spins that can be utilized for implementing qubits and quantum sensors in nanolayered-devices. Understanding the coherent dynamics of microwave driven spins in hBN is of crucial importance for advancing these emerging new technologies. Here, we demonstrate and study the Rabi oscillation and related phenomena of a negatively charged boron vacancy (V[Formula: see text]) spin ensemble in hBN. We report on different dynamics of the V[Formula: see text] spins at weak and strong magnetic fields. In the former case the defect behaves like a single electron spin system, while in the latter case it behaves like a multi-spin system exhibiting multiple-frequency dynamical oscillation as beat in the Ramsey fringes. We also carry out theoretical simulations for the spin dynamics of V[Formula: see text] and reveal that the nuclear spins can be driven via the strong electron nuclear coupling existing in V[Formula: see text] center, which can be modulated by the magnetic field and microwave field.
Collapse
Affiliation(s)
- Wei Liu
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, P. R. China
- CAS Center For Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, 230026 P. R. China
- Hefei National Laboratory, University of Science and Technology of China, Hefei, 230088 China
| | - Viktor Ivády
- Max-Planck-Institut für Physik komplexer Systeme, Nöthnitzer Street 38, D-01187 Dresden, Germany
- Department of Physics, Chemistry and Biology, Linköping University, SE-581 83 Linköping, Sweden
- Wigner Research Centre for Physics, PO Box 49, H-1525 Budapest, Hungary
| | - Zhi-Peng Li
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, P. R. China
- CAS Center For Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, 230026 P. R. China
- Hefei National Laboratory, University of Science and Technology of China, Hefei, 230088 China
| | - Yuan-Ze Yang
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, P. R. China
- CAS Center For Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, 230026 P. R. China
- Hefei National Laboratory, University of Science and Technology of China, Hefei, 230088 China
| | - Shang Yu
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, P. R. China
- CAS Center For Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, 230026 P. R. China
- Hefei National Laboratory, University of Science and Technology of China, Hefei, 230088 China
| | - Yu Meng
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, P. R. China
- CAS Center For Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, 230026 P. R. China
- Hefei National Laboratory, University of Science and Technology of China, Hefei, 230088 China
| | - Zhao-An Wang
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, P. R. China
- CAS Center For Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, 230026 P. R. China
- Hefei National Laboratory, University of Science and Technology of China, Hefei, 230088 China
| | - Nai-Jie Guo
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, P. R. China
- CAS Center For Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, 230026 P. R. China
- Hefei National Laboratory, University of Science and Technology of China, Hefei, 230088 China
| | - Fei-Fei Yan
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, P. R. China
- CAS Center For Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, 230026 P. R. China
- Hefei National Laboratory, University of Science and Technology of China, Hefei, 230088 China
| | - Qiang Li
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, P. R. China
- CAS Center For Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, 230026 P. R. China
- Hefei National Laboratory, University of Science and Technology of China, Hefei, 230088 China
| | - Jun-Feng Wang
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, P. R. China
- CAS Center For Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, 230026 P. R. China
- Hefei National Laboratory, University of Science and Technology of China, Hefei, 230088 China
| | - Jin-Shi Xu
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, P. R. China
- CAS Center For Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, 230026 P. R. China
- Hefei National Laboratory, University of Science and Technology of China, Hefei, 230088 China
| | - Xiao Liu
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, P. R. China
- CAS Center For Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, 230026 P. R. China
- Hefei National Laboratory, University of Science and Technology of China, Hefei, 230088 China
| | - Zong-Quan Zhou
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, P. R. China
- CAS Center For Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, 230026 P. R. China
- Hefei National Laboratory, University of Science and Technology of China, Hefei, 230088 China
| | - Yang Dong
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, P. R. China
- CAS Center For Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, 230026 P. R. China
- Hefei National Laboratory, University of Science and Technology of China, Hefei, 230088 China
| | - Xiang-Dong Chen
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, P. R. China
- CAS Center For Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, 230026 P. R. China
- Hefei National Laboratory, University of Science and Technology of China, Hefei, 230088 China
| | - Fang-Wen Sun
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, P. R. China
- CAS Center For Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, 230026 P. R. China
- Hefei National Laboratory, University of Science and Technology of China, Hefei, 230088 China
| | - Yi-Tao Wang
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, P. R. China
- CAS Center For Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, 230026 P. R. China
- Hefei National Laboratory, University of Science and Technology of China, Hefei, 230088 China
| | - Jian-Shun Tang
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, P. R. China
- CAS Center For Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, 230026 P. R. China
- Hefei National Laboratory, University of Science and Technology of China, Hefei, 230088 China
| | - Adam Gali
- Wigner Research Centre for Physics, PO Box 49, H-1525 Budapest, Hungary
- Department of Atomic Physics, Institute of Physics, Budapest University of Technology and Economics, Műegyetem rakpart 3., H-1111 Budapest, Hungary
| | - Chuan-Feng Li
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, P. R. China
- CAS Center For Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, 230026 P. R. China
- Hefei National Laboratory, University of Science and Technology of China, Hefei, 230088 China
| | - Guang-Can Guo
- CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, P. R. China
- CAS Center For Excellence in Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, 230026 P. R. China
- Hefei National Laboratory, University of Science and Technology of China, Hefei, 230088 China
| |
Collapse
|
16
|
Guo NJ, Liu W, Li ZP, Yang YZ, Yu S, Meng Y, Wang ZA, Zeng XD, Yan FF, Li Q, Wang JF, Xu JS, Wang YT, Tang JS, Li CF, Guo GC. Generation of Spin Defects by Ion Implantation in Hexagonal Boron Nitride. ACS OMEGA 2022; 7:1733-1739. [PMID: 35071868 PMCID: PMC8771700 DOI: 10.1021/acsomega.1c04564] [Citation(s) in RCA: 20] [Impact Index Per Article: 10.0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/22/2021] [Accepted: 12/21/2021] [Indexed: 05/30/2023]
Abstract
Optically addressable spin defects in wide-band-gap semiconductors as promising systems for quantum information and sensing applications have recently attracted increased attention. Spin defects in two-dimensional materials are expected to show superiority in quantum sensing due to their atomic thickness. Here, we demonstrate that an ensemble of negatively charged boron vacancies (VB -) with good spin properties in hexagonal boron nitride (hBN) can be generated by ion implantation. We carry out optically detected magnetic resonance measurements at room temperature to characterize the spin properties of ensembles of VB - defects, showing a zero-field splitting frequency of ∼3.47 GHz. We compare the photoluminescence intensity and spin properties of VB - defects generated using different implantation parameters, such as fluence, energy, and ion species. With the use of the proper parameters, we can successfully create VB - defects with a high probability. Our results provide a simple and practicable method to create spin defects in hBN, which is of great significance for realizing integrated hBN-based devices.
Collapse
Affiliation(s)
- Nai-Jie Guo
- CAS Key Laboratory of Quantum
Information and CAS Center For Excellence in Quantum Information and
Quantum Physics, University of Science and
Technology of China, Hefei 230052, People’s Republic
of China
| | - Wei Liu
- CAS Key Laboratory of Quantum
Information and CAS Center For Excellence in Quantum Information and
Quantum Physics, University of Science and
Technology of China, Hefei 230052, People’s Republic
of China
| | - Zhi-Peng Li
- CAS Key Laboratory of Quantum
Information and CAS Center For Excellence in Quantum Information and
Quantum Physics, University of Science and
Technology of China, Hefei 230052, People’s Republic
of China
| | - Yuan-Ze Yang
- CAS Key Laboratory of Quantum
Information and CAS Center For Excellence in Quantum Information and
Quantum Physics, University of Science and
Technology of China, Hefei 230052, People’s Republic
of China
| | - Shang Yu
- CAS Key Laboratory of Quantum
Information and CAS Center For Excellence in Quantum Information and
Quantum Physics, University of Science and
Technology of China, Hefei 230052, People’s Republic
of China
| | - Yu Meng
- CAS Key Laboratory of Quantum
Information and CAS Center For Excellence in Quantum Information and
Quantum Physics, University of Science and
Technology of China, Hefei 230052, People’s Republic
of China
| | - Zhao-An Wang
- CAS Key Laboratory of Quantum
Information and CAS Center For Excellence in Quantum Information and
Quantum Physics, University of Science and
Technology of China, Hefei 230052, People’s Republic
of China
| | - Xiao-Dong Zeng
- CAS Key Laboratory of Quantum
Information and CAS Center For Excellence in Quantum Information and
Quantum Physics, University of Science and
Technology of China, Hefei 230052, People’s Republic
of China
| | - Fei-Fei Yan
- CAS Key Laboratory of Quantum
Information and CAS Center For Excellence in Quantum Information and
Quantum Physics, University of Science and
Technology of China, Hefei 230052, People’s Republic
of China
| | - Qiang Li
- CAS Key Laboratory of Quantum
Information and CAS Center For Excellence in Quantum Information and
Quantum Physics, University of Science and
Technology of China, Hefei 230052, People’s Republic
of China
| | - Jun-Feng Wang
- CAS Key Laboratory of Quantum
Information and CAS Center For Excellence in Quantum Information and
Quantum Physics, University of Science and
Technology of China, Hefei 230052, People’s Republic
of China
| | - Jin-Shi Xu
- CAS Key Laboratory of Quantum
Information and CAS Center For Excellence in Quantum Information and
Quantum Physics, University of Science and
Technology of China, Hefei 230052, People’s Republic
of China
| | - Yi-Tao Wang
- CAS Key Laboratory of Quantum
Information and CAS Center For Excellence in Quantum Information and
Quantum Physics, University of Science and
Technology of China, Hefei 230052, People’s Republic
of China
| | - Jian-Shun Tang
- CAS Key Laboratory of Quantum
Information and CAS Center For Excellence in Quantum Information and
Quantum Physics, University of Science and
Technology of China, Hefei 230052, People’s Republic
of China
| | - Chuan-Feng Li
- CAS Key Laboratory of Quantum
Information and CAS Center For Excellence in Quantum Information and
Quantum Physics, University of Science and
Technology of China, Hefei 230052, People’s Republic
of China
| | - Guang-Can Guo
- CAS Key Laboratory of Quantum
Information and CAS Center For Excellence in Quantum Information and
Quantum Physics, University of Science and
Technology of China, Hefei 230052, People’s Republic
of China
| |
Collapse
|
17
|
Lee EMY, Yu A, de Pablo JJ, Galli G. Stability and molecular pathways to the formation of spin defects in silicon carbide. Nat Commun 2021; 12:6325. [PMID: 34732705 PMCID: PMC8566517 DOI: 10.1038/s41467-021-26419-0] [Citation(s) in RCA: 6] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/24/2021] [Accepted: 09/28/2021] [Indexed: 12/18/2022] Open
Abstract
Spin defects in wide-bandgap semiconductors provide a promising platform to create qubits for quantum technologies. Their synthesis, however, presents considerable challenges, and the mechanisms responsible for their generation or annihilation are poorly understood. Here, we elucidate spin defect formation processes in a binary crystal for a key qubit candidate-the divacancy complex (VV) in silicon carbide (SiC). Using atomistic models, enhanced sampling simulations, and density functional theory calculations, we find that VV formation is a thermally activated process that competes with the conversion of silicon (VSi) to carbon monovacancies (VC), and that VV reorientation can occur without dissociation. We also find that increasing the concentration of VSi relative to VC favors the formation of divacancies. Moreover, we identify pathways to create spin defects consisting of antisite-double vacancy complexes and determine their electronic properties. The detailed view of the mechanisms that underpin the formation and dynamics of spin defects presented here may facilitate the realization of qubits in an industrially relevant material.
Collapse
Affiliation(s)
- Elizabeth M Y Lee
- Pritzker School of Molecular Engineering, The University of Chicago, Chicago, IL, 60637, USA
| | - Alvin Yu
- Department of Chemistry, The University of Chicago, Chicago, IL, 60637, USA
- Institute for Biophysical Dynamics and James Franck Institute, The University of Chicago, Chicago, IL, 60637, USA
| | - Juan J de Pablo
- Pritzker School of Molecular Engineering, The University of Chicago, Chicago, IL, 60637, USA.
- Argonne National Laboratory, 9700 Cass Avenue, Lemont, IL, 60439, USA.
| | - Giulia Galli
- Pritzker School of Molecular Engineering, The University of Chicago, Chicago, IL, 60637, USA.
- Department of Chemistry, The University of Chicago, Chicago, IL, 60637, USA.
- Argonne National Laboratory, 9700 Cass Avenue, Lemont, IL, 60439, USA.
| |
Collapse
|
18
|
|