Electric Control of Magnetism in Multiferroic Rare-Earth-Substituted BiFeO_{3} with Ferrielectricity

The multiferroic rare-earth-substituted BiFeO_{3} has emerged as a promising candidate to achieve ultralow-energy-dissipation logic or memory devices, but the fundamental details of the switching mechanism involving the electrical, structural, and magnetic degrees of freedom is not fully understood, in particular, in its single-phase form. Here, a first-principles-based computational scheme is used to study Nd-doped BiFeO_{3} as a model system. The structure that yields a reduced P-E hysteresis loop is found to be ferrielectric with modulated octahedral tiltings, and it is shown that both the in-plane and out-of-plane ferromagnetization can be controlled by an applied electric field. The switching behaviors can be well interpreted by a Landau-type model, in which the magnetoelectric coupling is indirect and mediated by octahedral tiltings. The effects of varied composition and temperature are further discussed, revealing important correlations between the polarization switching and the robustness of the control of magnetization.

Electrical Control of Spin and Valley in Spin-Orbit Coupled Graphene Multilayers

Electrical control of magnetism has been a major technological pursuit of the spintronics community, owing to its far-reaching implications for data storage and transmission. Here, we propose and analyze a new mechanism for electrical switching of isospin, using chiral-stacked graphene multilayers, such as Bernal bilayer graphene or rhombohedral trilayer graphene, encapsulated by transition metal dichalcogenide (TMD) substrates. Leveraging the proximity-induced spin-orbit coupling from the TMD, we demonstrate electrical switching of correlation-induced spin and/or valley polarization, by reversing a perpendicular displacement field or the chemical potential. We substantiate our proposal with both analytical arguments and self-consistent Hartree-Fock numerics. Finally, we illustrate how the relative alignment of the TMDs, together with the top and bottom gate voltages, can be used to selectively switch distinct isospin flavors, putting forward correlated Van der Waals heterostructures as a promising platform for spintronics and valleytronics.

Ultralow Electric Current-Assisted Magnetization Switching due to Thermally Engineered Magnetic Anisotropy

Control of magnetic anisotropy in thin films with perpendicular magnetic anisotropy is of paramount importance for the development of spintronics with ultralow-energy consumption and high density. Traditional magnetoelectric heterostructures utilized the synergistic effect of piezoelectricity and magnetostriction to realize the electric field control of magnetic anisotropy, resulting in additional fabrication and modulation processes and a complicated device architecture. Here, we have systematically investigated the electric current tuning of the magnetic properties of the metallic NiCo2O4 film with intrinsic perpendicular magnetic anisotropy. Ferrimagnetic-to-paramagnetic phase transition has been induced through Joule heating, resulting in a rapid decrease of both magnetic coercivity and moment. An ultralow current density of 2.5 × 104 A/cm2, which is 2 to 3 orders magnitude lower than that of conventional spin transfer torque devices, has been verified to be effective for the control of the magnetic anisotropy of NiCo2O4. Successful triggering of magnetic switching has been realized through the application of a current pulse. These findings provide new perspectives toward the electric control of magnetic anisotropy and design of spintronics with an ultralow driving current density.

Spray pyrolysis-derived robust ferroelectric BiFeO3 thin films

Scalable and low-cost synthesis of high-quality ferroic films is critical for the development of advanced electronic devices and sensors. Here, we employ solution-based spray pyrolysis to fabricate bismuth ferrite thin films on glass substrates and explore the impact of annealing conditions to attain functional thin films of superior quality and switchable polarization. Optimised thin films display polycrystalline nanostructured grains with the highest X-ray diffraction intensity along the (110) orientation and a mixed Fe2+/3+ valence suggesting the presence of oxygen vacancies. The optimized films show a complex ferroelectric domain microstructure and exhibit robust nanoscale polarization switching in the range of several volts. Domains are found to scale with the sizes of nanocrystalline grains, which points to the role of surface-energy-related mechanisms affecting the domain patterns. Our results demonstrate the potential of spray pyrolysis for the fabrication of high-quality ferroelectric thin films and provide new opportunities for the development of low-cost scalable advanced electronic devices.

Hysteretic Responses of Skyrmion Lattices to Electric Fields in Magnetoelectric Cu2OSeO3

Electric field control of topologically nontrivial magnetic textures, such as skyrmions, provides a paradigm shift for future spintronics beyond the current silicon-based technology. While significant progress has been made by X-ray and neutron scattering studies, direct observation of such nanoscale spin structures and their dynamics driven by external electric fields remains a challenge in understanding the underlying mechanisms and harness functionalities. Here, using Lorentz transmission electron microscopy combined with in situ electric and magnetic fields at liquid helium temperatures, we report the crystallographic orientation-dependent skyrmion responses to electric fields in thin slabs of magnetoelectric Cu2OSeO3. We show that electric fields not only stabilize the hexagonally packed skyrmion lattices in the entire sample in a hysteretic manner but also induce the rotation of their reciprocal vector discretely by 30°. The nonvolatile and energy-efficient skyrmion lattice control by electric fields demonstrated in this work provides an important foundation for designing skyrmion-based qubits and memory devices.

Regulating Oxygen Ion Transport at the Nanoscale to Enable Highly Cyclable Magneto-Ionic Control of Magnetism

Magneto-ionics refers to the control of magnetic properties of materials through voltage-driven ion motion. To generate effective electric fields, either solid or liquid electrolytes are utilized, which also serve as ion reservoirs. Thin solid electrolytes have difficulties in (i) withstanding high electric fields without electric pinholes and (ii) maintaining stable ion transport during long-term actuation. In turn, the use of liquid electrolytes can result in poor cyclability, thus limiting their applicability. Here we propose a nanoscale-engineered magneto-ionic architecture (comprising a thin solid electrolyte in contact with a liquid electrolyte) that drastically enhances cyclability while preserving sufficiently high electric fields to trigger ion motion. Specifically, we show that the insertion of a highly nanostructured (amorphous-like) Ta layer (with suitable thickness and electric resistivity) between a magneto-ionic target material (i.e., Co₃O₄) and the liquid electrolyte increases magneto-ionic cyclability from <30 cycles (when no Ta is inserted) to more than 800 cycles. Transmission electron microscopy together with variable energy positron annihilation spectroscopy reveals the crucial role of the generated TaO_x interlayer as a solid electrolyte (i.e., ionic conductor) that improves magneto-ionic endurance by proper tuning of the types of voltage-driven structural defects. The Ta layer is very effective in trapping oxygen and hindering O^2- ions from moving into the liquid electrolyte, thus keeping O^2- motion mainly restricted between Co₃O₄ and Ta when voltage of alternating polarity is applied. We demonstrate that this approach provides a suitable strategy to boost magneto-ionics by combining the benefits of solid and liquid electrolytes in a synergetic manner.

Interface-related phenomena in epitaxial complex oxide ferroics across different thin film platforms: opportunities and challenges

Interfaces in complex oxides give rise to fascinating new physical phenomena arising from the interconnected spin, lattice, charge and orbital degrees of freedom. Most commonly, interfaces are engineered in epitaxial superlattice films. Of growing interest also are epitaxial vertically aligned nanocomposite films where interfaces form by self-assembly. These two thin film forms offer different capabilities for materials tuning and have been explored largely separately from one another. Ferroics (ferroelectric, ferromagnetic, multiferroic) are among the most fascinating phenomena to be manipulated using interface effects. Hence, in this review we compare and contrast the ferroic properties that arise in these two different film forms, highlighting exemplary materials combinations which demonstrate novel, enhanced and/or emergent ferroic functionalities. We discuss the origins of the observed functionalities and propose where knowledge can be translated from one materials form to another, to potentially produce new functionalities. Finally, for the two different film forms we present a perspective on underexplored/emerging research directions.

Spin State Switching in Heptauthrene Nanostructure by Electric Field: Computational Study

Recent experimental studies proved the presence of the triplet spin state in atomically precise heptauthrene nanostructure of nanographene type (composed of two interconnected triangles with zigzag edge). In the paper, we report the computational study predicting the possibility of controlling this spin state with an external in-plane electric field by causing the spin switching. We construct and discuss the ground state magnetic phase diagram involving S=1 (triplet) state, S=0 antiferromagnetic state and non-magnetic state and predict the switching possibility with the critical electric field of the order of 0.1 V/Å. We discuss the spin distribution across the nanostructure, finding its concentration along the longest zigzag edge. To model our system of interest, we use the mean-field Hubbard Hamiltonian, taking into account the in-plane external electric field as well as the in-plane magnetic field (in a form of the exchange field from the substrate). We also assess the effect of uniaxial strain on the magnetic phase diagram.