1
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Xu S, Wang X, Bellaiche L, Xu B. Electric Control of Magnetism in Multiferroic Rare-Earth-Substituted BiFeO_{3} with Ferrielectricity. PHYSICAL REVIEW LETTERS 2024; 133:046801. [PMID: 39121429 DOI: 10.1103/physrevlett.133.046801] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/25/2023] [Revised: 04/23/2024] [Accepted: 06/05/2024] [Indexed: 08/11/2024]
Abstract
The multiferroic rare-earth-substituted BiFeO_{3} has emerged as a promising candidate to achieve ultralow-energy-dissipation logic or memory devices, but the fundamental details of the switching mechanism involving the electrical, structural, and magnetic degrees of freedom is not fully understood, in particular, in its single-phase form. Here, a first-principles-based computational scheme is used to study Nd-doped BiFeO_{3} as a model system. The structure that yields a reduced P-E hysteresis loop is found to be ferrielectric with modulated octahedral tiltings, and it is shown that both the in-plane and out-of-plane ferromagnetization can be controlled by an applied electric field. The switching behaviors can be well interpreted by a Landau-type model, in which the magnetoelectric coupling is indirect and mediated by octahedral tiltings. The effects of varied composition and temperature are further discussed, revealing important correlations between the polarization switching and the robustness of the control of magnetization.
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Affiliation(s)
- Shiji Xu
- Jiangsu Key Laboratory of Frontier Material Physics and Devices, Institute of Theoretical and Applied Physics, School of Physical Science and Technology, Soochow University, Suzhou 215006, China
| | - Xin Wang
- Jiangsu Key Laboratory of Frontier Material Physics and Devices, Institute of Theoretical and Applied Physics, School of Physical Science and Technology, Soochow University, Suzhou 215006, China
| | - L Bellaiche
- Smart Ferroic Materials Center, Physics Department and Institute for Nanoscience and Engineering, University of Arkansas, Fayetteville, Arkansas 72701, USA
- Department of Materials Science and Engineering, Tel Aviv University, Ramat Aviv, Tel Aviv 6997801, Israel
| | - Bin Xu
- Jiangsu Key Laboratory of Frontier Material Physics and Devices, Institute of Theoretical and Applied Physics, School of Physical Science and Technology, Soochow University, Suzhou 215006, China
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2
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Wang T, Vila M, Zaletel MP, Chatterjee S. Electrical Control of Spin and Valley in Spin-Orbit Coupled Graphene Multilayers. PHYSICAL REVIEW LETTERS 2024; 132:116504. [PMID: 38563932 DOI: 10.1103/physrevlett.132.116504] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/11/2023] [Revised: 01/30/2024] [Accepted: 02/20/2024] [Indexed: 04/04/2024]
Abstract
Electrical control of magnetism has been a major technological pursuit of the spintronics community, owing to its far-reaching implications for data storage and transmission. Here, we propose and analyze a new mechanism for electrical switching of isospin, using chiral-stacked graphene multilayers, such as Bernal bilayer graphene or rhombohedral trilayer graphene, encapsulated by transition metal dichalcogenide (TMD) substrates. Leveraging the proximity-induced spin-orbit coupling from the TMD, we demonstrate electrical switching of correlation-induced spin and/or valley polarization, by reversing a perpendicular displacement field or the chemical potential. We substantiate our proposal with both analytical arguments and self-consistent Hartree-Fock numerics. Finally, we illustrate how the relative alignment of the TMDs, together with the top and bottom gate voltages, can be used to selectively switch distinct isospin flavors, putting forward correlated Van der Waals heterostructures as a promising platform for spintronics and valleytronics.
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Affiliation(s)
- Taige Wang
- Department of Physics, University of California, Berkeley, California 94720, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA
| | - Marc Vila
- Department of Physics, University of California, Berkeley, California 94720, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA
| | - Michael P Zaletel
- Department of Physics, University of California, Berkeley, California 94720, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA
| | - Shubhayu Chatterjee
- Department of Physics, University of California, Berkeley, California 94720, USA
- Department of Physics, Carnegie Mellon University, Pittsburgh, Pennsylvania 15213, USA
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3
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Du Q, Wang W, Tang F, Su W, Wu J, Hu Z, Wang Z, Liu M. Ultralow Electric Current-Assisted Magnetization Switching due to Thermally Engineered Magnetic Anisotropy. ACS APPLIED MATERIALS & INTERFACES 2024; 16:7463-7469. [PMID: 38300878 DOI: 10.1021/acsami.3c17325] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 02/03/2024]
Abstract
Control of magnetic anisotropy in thin films with perpendicular magnetic anisotropy is of paramount importance for the development of spintronics with ultralow-energy consumption and high density. Traditional magnetoelectric heterostructures utilized the synergistic effect of piezoelectricity and magnetostriction to realize the electric field control of magnetic anisotropy, resulting in additional fabrication and modulation processes and a complicated device architecture. Here, we have systematically investigated the electric current tuning of the magnetic properties of the metallic NiCo2O4 film with intrinsic perpendicular magnetic anisotropy. Ferrimagnetic-to-paramagnetic phase transition has been induced through Joule heating, resulting in a rapid decrease of both magnetic coercivity and moment. An ultralow current density of 2.5 × 104 A/cm2, which is 2 to 3 orders magnitude lower than that of conventional spin transfer torque devices, has been verified to be effective for the control of the magnetic anisotropy of NiCo2O4. Successful triggering of magnetic switching has been realized through the application of a current pulse. These findings provide new perspectives toward the electric control of magnetic anisotropy and design of spintronics with an ultralow driving current density.
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Affiliation(s)
- Qin Du
- State Key Laboratory for Manufacturing Systems Engineering, Electronic Materials Research Laboratory, School of Electronic Science and Engineering, Xi'an Jiaotong University, Xi'an 710049, China
| | - Wenli Wang
- State Key Laboratory for Manufacturing Systems Engineering, Electronic Materials Research Laboratory, School of Electronic Science and Engineering, Xi'an Jiaotong University, Xi'an 710049, China
| | - Fan Tang
- State Key Laboratory for Manufacturing Systems Engineering, Electronic Materials Research Laboratory, School of Electronic Science and Engineering, Xi'an Jiaotong University, Xi'an 710049, China
| | - Wei Su
- State Key Laboratory for Manufacturing Systems Engineering, Electronic Materials Research Laboratory, School of Electronic Science and Engineering, Xi'an Jiaotong University, Xi'an 710049, China
| | - Jingen Wu
- State Key Laboratory for Manufacturing Systems Engineering, Electronic Materials Research Laboratory, School of Electronic Science and Engineering, Xi'an Jiaotong University, Xi'an 710049, China
| | - Zhongqiang Hu
- State Key Laboratory for Manufacturing Systems Engineering, Electronic Materials Research Laboratory, School of Electronic Science and Engineering, Xi'an Jiaotong University, Xi'an 710049, China
| | - Zhiguang Wang
- State Key Laboratory for Manufacturing Systems Engineering, Electronic Materials Research Laboratory, School of Electronic Science and Engineering, Xi'an Jiaotong University, Xi'an 710049, China
| | - Ming Liu
- State Key Laboratory for Manufacturing Systems Engineering, Electronic Materials Research Laboratory, School of Electronic Science and Engineering, Xi'an Jiaotong University, Xi'an 710049, China
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4
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Nagashree MC, Kulkarni SD, Rajendra BV, Seidel J, Murari MS, Sharma P. Spray pyrolysis-derived robust ferroelectric BiFeO 3 thin films. Phys Chem Chem Phys 2023; 25:22286-22293. [PMID: 37578066 DOI: 10.1039/d3cp02877a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 08/15/2023]
Abstract
Scalable and low-cost synthesis of high-quality ferroic films is critical for the development of advanced electronic devices and sensors. Here, we employ solution-based spray pyrolysis to fabricate bismuth ferrite thin films on glass substrates and explore the impact of annealing conditions to attain functional thin films of superior quality and switchable polarization. Optimised thin films display polycrystalline nanostructured grains with the highest X-ray diffraction intensity along the (110) orientation and a mixed Fe2+/3+ valence suggesting the presence of oxygen vacancies. The optimized films show a complex ferroelectric domain microstructure and exhibit robust nanoscale polarization switching in the range of several volts. Domains are found to scale with the sizes of nanocrystalline grains, which points to the role of surface-energy-related mechanisms affecting the domain patterns. Our results demonstrate the potential of spray pyrolysis for the fabrication of high-quality ferroelectric thin films and provide new opportunities for the development of low-cost scalable advanced electronic devices.
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Affiliation(s)
- M C Nagashree
- Department of Physics, Manipal Institute of Technology, Manipal Academy of Higher Education, Manipal-576104, India.
| | - S D Kulkarni
- Department of Atomic and Molecular Physics, Manipal Institute of Technology, Manipal Academy of Higher Education, Manipal-576104, India.
| | - B V Rajendra
- Department of Physics, Manipal Institute of Technology, Manipal Academy of Higher Education, Manipal-576104, India.
| | - J Seidel
- School of Materials Science and Engineering, UNSW, Sydney, NSW, 2052, Australia
- ARC Centre of Excellence in Future Low-Energy Electronics Technologies, UNSW, Sydney, NSW, 2052, Australia
| | - M S Murari
- DST Purse Lab, Mangalore University, Mangalagangotri, Mangalore-574199, India
| | - P Sharma
- ARC Centre of Excellence in Future Low-Energy Electronics Technologies, UNSW, Sydney, NSW, 2052, Australia
- College of Science and Engineering, Flinders University, Bedford Park, Adelaide, SA, 5042, Australia.
- Flinders Institute for Nanoscale Science and Technology, Flinders University, Adelaide, SA, 5042, Australia
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Han MG, Camino F, Vorobyev PA, Garlow J, Rov R, Söhnel T, Seidel J, Mostovoy M, Tretiakov OA, Zhu Y. Hysteretic Responses of Skyrmion Lattices to Electric Fields in Magnetoelectric Cu 2OSeO 3. NANO LETTERS 2023; 23:7143-7149. [PMID: 37523664 DOI: 10.1021/acs.nanolett.3c02034] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 08/02/2023]
Abstract
Electric field control of topologically nontrivial magnetic textures, such as skyrmions, provides a paradigm shift for future spintronics beyond the current silicon-based technology. While significant progress has been made by X-ray and neutron scattering studies, direct observation of such nanoscale spin structures and their dynamics driven by external electric fields remains a challenge in understanding the underlying mechanisms and harness functionalities. Here, using Lorentz transmission electron microscopy combined with in situ electric and magnetic fields at liquid helium temperatures, we report the crystallographic orientation-dependent skyrmion responses to electric fields in thin slabs of magnetoelectric Cu2OSeO3. We show that electric fields not only stabilize the hexagonally packed skyrmion lattices in the entire sample in a hysteretic manner but also induce the rotation of their reciprocal vector discretely by 30°. The nonvolatile and energy-efficient skyrmion lattice control by electric fields demonstrated in this work provides an important foundation for designing skyrmion-based qubits and memory devices.
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Affiliation(s)
- Myung-Geun Han
- Condensed Matter Physics & Materials Science, Brookhaven National Laboratory, Upton, New York 11973, United States
| | - Fernando Camino
- Center for Functional Nanomaterials, Brookhaven National Laboratory, Upton, New York 11973, United States
| | - Pavel A Vorobyev
- School of Physics, The University of New South Wales, Sydney 2052, Australia
| | - Joseph Garlow
- Condensed Matter Physics & Materials Science, Brookhaven National Laboratory, Upton, New York 11973, United States
| | - Rosanna Rov
- School of Chemical Sciences, University of Auckland, Auckland 1142, New Zealand
- The MacDiarmid Institute for Advanced Materials and Nanotechnology, Wellington 6012, New Zealand
| | - Tilo Söhnel
- School of Chemical Sciences, University of Auckland, Auckland 1142, New Zealand
- The MacDiarmid Institute for Advanced Materials and Nanotechnology, Wellington 6012, New Zealand
| | - Jan Seidel
- Department of Materials Science and Engineering, The University of New South Wales, Sydney 2052, Australia
| | - Maxim Mostovoy
- Department of Physics, University of Groningen, Groningen 9747, The Netherlands
| | - Oleg A Tretiakov
- School of Physics, The University of New South Wales, Sydney 2052, Australia
| | - Yimei Zhu
- Condensed Matter Physics & Materials Science, Brookhaven National Laboratory, Upton, New York 11973, United States
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6
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Tan Z, Ma Z, Fuentes L, Liedke MO, Butterling M, Attallah AG, Hirschmann E, Wagner A, Abad L, Casañ-Pastor N, Lopeandia AF, Menéndez E, Sort J. Regulating Oxygen Ion Transport at the Nanoscale to Enable Highly Cyclable Magneto-Ionic Control of Magnetism. ACS NANO 2023; 17:6973-6984. [PMID: 36972329 PMCID: PMC10100572 DOI: 10.1021/acsnano.3c01105] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 02/06/2023] [Accepted: 03/21/2023] [Indexed: 06/18/2023]
Abstract
Magneto-ionics refers to the control of magnetic properties of materials through voltage-driven ion motion. To generate effective electric fields, either solid or liquid electrolytes are utilized, which also serve as ion reservoirs. Thin solid electrolytes have difficulties in (i) withstanding high electric fields without electric pinholes and (ii) maintaining stable ion transport during long-term actuation. In turn, the use of liquid electrolytes can result in poor cyclability, thus limiting their applicability. Here we propose a nanoscale-engineered magneto-ionic architecture (comprising a thin solid electrolyte in contact with a liquid electrolyte) that drastically enhances cyclability while preserving sufficiently high electric fields to trigger ion motion. Specifically, we show that the insertion of a highly nanostructured (amorphous-like) Ta layer (with suitable thickness and electric resistivity) between a magneto-ionic target material (i.e., Co3O4) and the liquid electrolyte increases magneto-ionic cyclability from <30 cycles (when no Ta is inserted) to more than 800 cycles. Transmission electron microscopy together with variable energy positron annihilation spectroscopy reveals the crucial role of the generated TaOx interlayer as a solid electrolyte (i.e., ionic conductor) that improves magneto-ionic endurance by proper tuning of the types of voltage-driven structural defects. The Ta layer is very effective in trapping oxygen and hindering O2- ions from moving into the liquid electrolyte, thus keeping O2- motion mainly restricted between Co3O4 and Ta when voltage of alternating polarity is applied. We demonstrate that this approach provides a suitable strategy to boost magneto-ionics by combining the benefits of solid and liquid electrolytes in a synergetic manner.
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Affiliation(s)
- Zhengwei Tan
- Departament
de Física, Universitat Autònoma
de Barcelona, 08193 Cerdanyola del Vallès, Spain
| | - Zheng Ma
- Departament
de Física, Universitat Autònoma
de Barcelona, 08193 Cerdanyola del Vallès, Spain
| | - Laura Fuentes
- Institut
de Ciència de Materials de Barcelona, CSIC, Campus UAB, 08193 Bellaterra, Barcelona, Spain
- Centre Nacional
de Microelectrònica, Institut de
Microelectrònica de Barcelona-CSIC, Campus UAB, 08193 Bellaterra, Barcelona, Spain
| | - Maciej Oskar Liedke
- Institute
of Radiation Physics, Helmholtz-Zentrum
Dresden - Rossendorf, Dresden 01328, Germany
| | - Maik Butterling
- Institute
of Radiation Physics, Helmholtz-Zentrum
Dresden - Rossendorf, Dresden 01328, Germany
| | - Ahmed G. Attallah
- Institute
of Radiation Physics, Helmholtz-Zentrum
Dresden - Rossendorf, Dresden 01328, Germany
| | - Eric Hirschmann
- Institute
of Radiation Physics, Helmholtz-Zentrum
Dresden - Rossendorf, Dresden 01328, Germany
| | - Andreas Wagner
- Institute
of Radiation Physics, Helmholtz-Zentrum
Dresden - Rossendorf, Dresden 01328, Germany
| | - Llibertat Abad
- Centre Nacional
de Microelectrònica, Institut de
Microelectrònica de Barcelona-CSIC, Campus UAB, 08193 Bellaterra, Barcelona, Spain
| | - Nieves Casañ-Pastor
- Institut
de Ciència de Materials de Barcelona, CSIC, Campus UAB, 08193 Bellaterra, Barcelona, Spain
| | - Aitor F. Lopeandia
- Departament
de Física, Universitat Autònoma
de Barcelona, 08193 Cerdanyola del Vallès, Spain
- Catalan
Institute of Nanoscience and Nanotechnology (ICN2), CSIC and BIST, Campus UAB, Cerdanyola del Vallès, 08193 Barcelona, Spain
| | - Enric Menéndez
- Departament
de Física, Universitat Autònoma
de Barcelona, 08193 Cerdanyola del Vallès, Spain
| | - Jordi Sort
- Departament
de Física, Universitat Autònoma
de Barcelona, 08193 Cerdanyola del Vallès, Spain
- Institució
Catalana de Recerca i Estudis Avançats (ICREA), Pg. Lluís Companys 23, E-08010 Barcelona, Spain
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MacManus-Driscoll JL, Wu R, Li W. Interface-related phenomena in epitaxial complex oxide ferroics across different thin film platforms: opportunities and challenges. MATERIALS HORIZONS 2023; 10:1060-1086. [PMID: 36815609 PMCID: PMC10068909 DOI: 10.1039/d2mh01527g] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 12/15/2022] [Accepted: 02/16/2023] [Indexed: 06/18/2023]
Abstract
Interfaces in complex oxides give rise to fascinating new physical phenomena arising from the interconnected spin, lattice, charge and orbital degrees of freedom. Most commonly, interfaces are engineered in epitaxial superlattice films. Of growing interest also are epitaxial vertically aligned nanocomposite films where interfaces form by self-assembly. These two thin film forms offer different capabilities for materials tuning and have been explored largely separately from one another. Ferroics (ferroelectric, ferromagnetic, multiferroic) are among the most fascinating phenomena to be manipulated using interface effects. Hence, in this review we compare and contrast the ferroic properties that arise in these two different film forms, highlighting exemplary materials combinations which demonstrate novel, enhanced and/or emergent ferroic functionalities. We discuss the origins of the observed functionalities and propose where knowledge can be translated from one materials form to another, to potentially produce new functionalities. Finally, for the two different film forms we present a perspective on underexplored/emerging research directions.
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Affiliation(s)
| | - Rui Wu
- Department of Materials Science and Metallurgy, University of Cambridge, Cambridge, CB3 0FS, UK.
- Spin-X Institute, School of Physics and Optoelectronics, State Key Laboratory of Luminescent Materials and Devices, Guangdong-Hong Kong-Macao Joint Laboratory of Optoelectronic and Magnetic Functional Materials, South China University of Technology, Guangzhou 511442, China
| | - Weiwei Li
- Department of Materials Science and Metallurgy, University of Cambridge, Cambridge, CB3 0FS, UK.
- MIIT Key Laboratory of Aerospace Information Materials and Physics, State Key Laboratory of Mechanics and Control of Mechanical Structures, College of Physics, Nanjing University of Aeronautics and Astronautics, Nanjing 211106, China
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Spin State Switching in Heptauthrene Nanostructure by Electric Field: Computational Study. Int J Mol Sci 2021; 22:ijms222413364. [PMID: 34948161 PMCID: PMC8705984 DOI: 10.3390/ijms222413364] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/08/2021] [Revised: 11/26/2021] [Accepted: 11/29/2021] [Indexed: 11/23/2022] Open
Abstract
Recent experimental studies proved the presence of the triplet spin state in atomically precise heptauthrene nanostructure of nanographene type (composed of two interconnected triangles with zigzag edge). In the paper, we report the computational study predicting the possibility of controlling this spin state with an external in-plane electric field by causing the spin switching. We construct and discuss the ground state magnetic phase diagram involving S=1 (triplet) state, S=0 antiferromagnetic state and non-magnetic state and predict the switching possibility with the critical electric field of the order of 0.1 V/Å. We discuss the spin distribution across the nanostructure, finding its concentration along the longest zigzag edge. To model our system of interest, we use the mean-field Hubbard Hamiltonian, taking into account the in-plane external electric field as well as the in-plane magnetic field (in a form of the exchange field from the substrate). We also assess the effect of uniaxial strain on the magnetic phase diagram.
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