Termination control of electronic phases in oxide thin films and interfaces: LaAlO3/SrTiO3(001)

Atomic Force Manipulation of Single Magnetic Nanoparticles for Spin-Based Electronics

Magnetic nanoparticles (MNPs) are instrumental for fabrication of tailored nanomagnetic structures, especially where top-down lithographic patterning is not feasible. Here, we demonstrate precise and controllable manipulation of individual magnetite MNPs using the tip of an atomic force microscope. We verify our approach by placing a single MNP with a diameter of 50 nm on top of a 100 nm Hall bar fabricated in a quasi-two-dimensional electron gas (q2DEG) at the oxide interface between LaAlO₃ and SrTiO₃ (LAO/STO). A hysteresis loop due to the magnetic hysteresis properties of the magnetite MNPs was observed in the Hall resistance. Further, the effective coercivity of the Hall resistance hysteresis loop could be changed upon field cooling at different angles of the cooling field with respect to the measuring field. The effect is associated with the alignment of the MNP magnetic moment along the easy axis closest to the external field direction across the Verwey transition in magnetite. Our results can facilitate experimental realization of magnetic proximity devices using single MNPs and two-dimensional materials for spin-based nanoelectronics.

Physical insights into the Au growth on the surface of a LaAlO3/SrTiO3 heterointerface

Au growth on the LAO/STO substrate generates an optical peak in the wavelength region of 600–1200 nm due to the interaction of the Au s and dz2 orbitals with the O pz orbital of the LAO film.

Coupling Charge and Topological Reconstructions at Polar Oxide Interfaces

In oxide heterostructures, different materials are integrated into a single artificial crystal, resulting in a breaking of inversion symmetry across the heterointerfaces. A notable example is the interface between polar and nonpolar materials, where valence discontinuities lead to otherwise inaccessible charge and spin states. This approach paved the way for the discovery of numerous unconventional properties absent in the bulk constituents. However, control of the geometric structure of the electronic wave functions in correlated oxides remains an open challenge. Here, we create heterostructures consisting of ultrathin SrRuO_{3}, an itinerant ferromagnet hosting momentum-space sources of Berry curvature, and LaAlO_{3}, a polar wide-band-gap insulator. Transmission electron microscopy reveals an atomically sharp LaO/RuO_{2}/SrO interface configuration, leading to excess charge being pinned near the LaAlO_{3}/SrRuO_{3} interface. We demonstrate through magneto-optical characterization, theoretical calculations and transport measurements that the real-space charge reconstruction drives a reorganization of the topological charges in the band structure, thereby modifying the momentum-space Berry curvature in SrRuO_{3}. Our results illustrate how the topological and magnetic features of oxides can be manipulated by engineering charge discontinuities at oxide interfaces.

Oxidic 2D Materials

The possibility of producing stable thin films, only a few atomic layers thick, from a variety of materials beyond graphene has led to two-dimensional (2D) materials being studied intensively in recent years. By reducing the layer thickness and approaching the crystallographic monolayer limit, a variety of unexpected and technologically relevant property phenomena were observed, which also depend on the subsequent arrangement and possible combination of individual layers to form heterostructures. These properties can be specifically used for the development of multifunctional devices, meeting the requirements of the advancing miniaturization of modern manufacturing technologies and the associated need to stabilize physical states even below critical layer thicknesses of conventional materials in the fields of electronics, magnetism and energy conversion. Differences in the structure of potential two-dimensional materials result in decisive influences on possible growth methods and possibilities for subsequent transfer of the thin films. In this review, we focus on recent advances in the rapidly growing field of two-dimensional materials, highlighting those with oxidic crystal structure like perovskites, garnets and spinels. In addition to a selection of well-established growth techniques and approaches for thin film transfer, we evaluate in detail their application potential as free-standing monolayers, bilayers and multilayers in a wide range of advanced technological applications. Finally, we provide suggestions for future developments of this promising research field in consideration of current challenges regarding scalability and structural stability of ultra-thin films.

Direct Observation and Control of Surface Termination in Perovskite Oxide Heterostructures

Interfacial behavior of quantum materials leads to emergent phenomena such as quantum phase transitions and metastable functional phases. Probes for in situ and real time surface-sensitive characterization are critical for control during epitaxial synthesis of heterostructures. Termination switching in complex oxides has been studied using a variety of probes, often ex situ; however, direct in situ observation of this phenomena during growth is rare. To address this, we establish in situ and real time Auger electron spectroscopy for pulsed laser deposition with reflection high energy electron diffraction, providing structural and compositional surface information during film deposition. Using this capability, we show the direct observation and control of surface termination in heterostructures of SrTiO₃ and SrRuO₃. Density-functional-theory calculations capture the energetics and stability of the observed structures, elucidating their electronic behavior. This work demonstrates an exciting approach to monitor and control the composition of materials at the atomic scale for control over emergent phenomena and potential applications.

Tailoring LaAlO3/SrTiO3 Interface Metallicity by Oxygen Surface Adsorbates

We report an oxygen surface adsorbates induced metal-insulator transition at the LaAlO3/SrTiO3 interfaces. The observed effects were attributed to the terminations of surface Al sites and the resultant electron-accepting surface states. By controlling the local oxygen adsorptions, we successfully demonstrated the nondestructive patterning of the interface two-dimensional electron gas (2DEG). The obtained 2DEG structures are stable in air and also robust against general solvent treatments. This study provides new insights into the metal-insulator transition mechanism at the complex oxide interfaces and also a highly efficient technique for tailoring the interface properties.

Two-dimensional electron gas and its electric control at the interface between ferroelectric and antiferromagnetic insulator studied from first principles

Using first-principles methods we demonstrate the possibility of using the ferroelectric polarization to create and control a two-dimensional electron gas at a multiferroic oxide interface.

The origin of two-dimensional electron gases at oxide interfaces: insights from theory

The response of oxide thin films to polar discontinuities at interfaces and surfaces has generated enormous activity due to the variety of interesting effects that it gives rise to. A case in point is the discovery of the electron gas at the interface between LaAlO3 and SrTiO3, which has since been shown to be quasi-two-dimensional, switchable, magnetic and/or superconducting. Despite these findings, the origin of the two-dimensional electron gas is highly debated and several possible mechanisms remain. Here we review the main proposed mechanisms and attempt to model expected effects in a quantitative way with the ambition of better constraining what effects can/cannot explain the observed phenomenology. We do it in the framework of a phenomenological model constructed to provide an understanding of the electronic and/or redox screening of the chemical charge in oxide heterostructures. We also discuss the effect of intermixing, both conserving and not conserving the total stoichiometry.

Massive symmetry breaking in LaAlO3/SrTiO3(111) quantum wells: a three-orbital strongly correlated generalization of graphene

Density functional theory calculations with an on-site Coulomb repulsion term reveal competing ground states in (111)-oriented (LaAlO(3))(M)/(SrTiO(3))(N) superlattices with n-type interfaces, ranging from spin, orbitally polarized (with selective e(g)('), a(1g), or d(xy) occupation), Dirac point Fermi surface, to charge-ordered flat band phases. These phases are steered by the interplay of (i) Hubbard U, (ii) SrTiO(3) quantum well thickness, and (iii) crystal field splitting tied to in-plane strain. In the honeycomb lattice bilayer N = 2 under tensile strain, inversion symmetry breaking drives the system from a ferromagnetic Dirac point (massless Weyl semimetal) to a charge-ordered multiferroic (ferromagnetic and ferroelectric) flat band massive (insulating) phase. With increasing SrTiO(3) quantum well thickness an insulator-to-metal transition occurs.