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Caban P, Pietruszka R, Kaszewski J, Ożga M, Witkowski BS, Kopalko K, Kuźmiuk P, Gwóźdź K, Płaczek-Popko E, Lawniczak-Jablonska K, Godlewski M. Impact of GaAs(100) surface preparation on EQE of AZO/Al 2O 3/p-GaAs photovoltaic structures. BEILSTEIN JOURNAL OF NANOTECHNOLOGY 2021; 12:578-592. [PMID: 34285862 PMCID: PMC8261275 DOI: 10.3762/bjnano.12.48] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 12/12/2020] [Accepted: 06/12/2021] [Indexed: 06/13/2023]
Abstract
In order to effectively utilize the photovoltaic properties of gallium arsenide, its surface/interface needs to be properly prepared. In the experiments described here we examined eight different paths of GaAs surface treatment (cleaning, etching, passivation) which resulted in different external quantum efficiency (EQE) values of the tested photovoltaic (PV) cells. Atomic force microscopy (AFM) and scanning electron microscopy (SEM) examinations were conducted to obtain structural details of the devices. X-ray photoelectron spectroscopy (XPS) with depth profiling was used to examine interface structure and changes in the elemental content and chemical bonds. The photoluminescence (PL) properties and bandgap measurements of the deposited layers were also reported. The highest EQE value was obtained for the samples initially etched with a citric acid-based etchant and, in the last preparation step, either passivated with ammonium sulfide aqueous solution or treated with ammonium hydroxide solution with no final passivation. Subsequent I-V measurements, however, confirmed that from these samples, only the sulfur-passivated ones provided the highest current density. The tested devices were fabricated by using the ALD method.
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Affiliation(s)
- Piotr Caban
- Institute of Physics, Polish Academy of Sciences, Aleja Lotników 32/46, PL-02668 Warsaw, Poland
| | - Rafał Pietruszka
- Institute of Physics, Polish Academy of Sciences, Aleja Lotników 32/46, PL-02668 Warsaw, Poland
| | - Jarosław Kaszewski
- Institute of Physics, Polish Academy of Sciences, Aleja Lotników 32/46, PL-02668 Warsaw, Poland
| | - Monika Ożga
- Institute of Physics, Polish Academy of Sciences, Aleja Lotników 32/46, PL-02668 Warsaw, Poland
| | - Bartłomiej S Witkowski
- Institute of Physics, Polish Academy of Sciences, Aleja Lotników 32/46, PL-02668 Warsaw, Poland
| | - Krzysztof Kopalko
- Institute of Physics, Polish Academy of Sciences, Aleja Lotników 32/46, PL-02668 Warsaw, Poland
| | - Piotr Kuźmiuk
- Institute of Physics, Polish Academy of Sciences, Aleja Lotników 32/46, PL-02668 Warsaw, Poland
| | - Katarzyna Gwóźdź
- Department of Quantum Technologies, Faculty of Fundamental Problems of Technology, Wrocław University of Science and Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, Poland
| | - Ewa Płaczek-Popko
- Department of Quantum Technologies, Faculty of Fundamental Problems of Technology, Wrocław University of Science and Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, Poland
| | | | - Marek Godlewski
- Institute of Physics, Polish Academy of Sciences, Aleja Lotników 32/46, PL-02668 Warsaw, Poland
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Guggenmos A, Akil A, Ossiander M, Schäffer M, Azzeer AM, Boehm G, Amann MC, Kienberger R, Schultze M, Kleineberg U. Attosecond photoelectron streaking with enhanced energy resolution for small-bandgap materials. OPTICS LETTERS 2016; 41:3714-3717. [PMID: 27519070 DOI: 10.1364/ol.41.003714] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/06/2023]
Abstract
Attosecond photoelectron streaking spectroscopy allows time-resolved electron dynamics with a temporal resolution approaching the atomic unit of time. Studies have been performed in numerous systems, including atoms, molecules, and surfaces, and the quest for ever higher temporal resolution called for ever wider spectral extent of the attosecond pulses. For typical experiments relying on attosecond pulses with a duration of 200 as, the time-bandwidth limitation for a Gaussian pulse implies a minimal spectral bandwidth larger than 9 eV translating to a corresponding spread of the detected photoelectron kinetic energies. Here, by utilizing a specially tailored narrowband reflective XUV multilayer mirror, we explore experimentally the minimal spectral width compatible with attosecond time-resolved photoelectron spectroscopy while obtaining the highest possible spectral resolution. The validity of the concept is proven by recording attosecond electron streaking traces from the direct semiconductor gallium arsenide (GaAs), with a nominal bandgap of 1.42 eV at room temperature, proving the potential of the approach for tracking charge dynamics also in these technologically highly relevant materials that previously have been inaccessible to attosecond science.
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Carrad DJ, Burke AM, Reece PJ, Lyttleton RW, Waddington DEJ, Rai A, Reuter D, Wieck AD, Micolich AP. The effect of (NH4)2Sx passivation on the (311)A GaAs surface and its use in AlGaAs/GaAs heterostructure devices. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2013; 25:325304. [PMID: 23860377 DOI: 10.1088/0953-8984/25/32/325304] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/02/2023]
Abstract
We have studied the efficacy of (NH4)2Sx surface passivation on the (311)A GaAs surface. We report XPS studies of simultaneously-grown (311)A and (100) heterostructures showing that the (NH4)2Sx solution removes surface oxide and sulfidizes both surfaces. Passivation is often characterized using photoluminescence measurements; we show that while (NH4)2Sx treatment gives a 40-60 × increase in photoluminescence intensity for the (100) surface, an increase of only 2-3 × is obtained for the (311)A surface. A corresponding lack of reproducible improvement in the gate hysteresis of (311)A heterostructure transistor devices made with the passivation treatment performed immediately prior to gate deposition is also found. We discuss possible reasons why sulfur passivation is ineffective for (311)A GaAs, and propose alternative strategies for passivation of this surface.
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Affiliation(s)
- D J Carrad
- School of Physics, University of New South Wales, Sydney NSW 2052, Australia
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Electronic effects at self-assembled 4,4′-thio-bis-benzenethiolate protected Au nanoparticles on p-GaAs (100) electrodes. Electrochim Acta 2012. [DOI: 10.1016/j.electacta.2012.04.161] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/20/2022]
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Lazarescu V, Scurtu R, Lazarescu MF, Toader AM, Volanschi E. Passivation effects of 4,4′-thio-bis-benzenethiolate adsorbed layers on semiconducting electrodes. Electrochim Acta 2010. [DOI: 10.1016/j.electacta.2010.02.004] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/19/2022]
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Yim SG, Jones TS. Influence of Intermolecular Interactions on the Structure of Copper Phthalocyanine Layers on Passivated Semiconductor Surfaces. B KOREAN CHEM SOC 2010. [DOI: 10.5012/bkcs.2010.31.8.2247] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/20/2022]
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Lebedev MV, Shimomura M, Fukuda Y. Chemical analysis of a sulfur-treated InSb(111)A surface by XPS. SURF INTERFACE ANAL 2010. [DOI: 10.1002/sia.3283] [Citation(s) in RCA: 12] [Impact Index Per Article: 0.9] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/12/2022]
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8
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Saavedra M, Buljan A, Muñoz M. Theoretical study of methanethiol adsorbed on GaAs(100) surface. ACTA ACUST UNITED AC 2009. [DOI: 10.1016/j.theochem.2009.04.002] [Citation(s) in RCA: 7] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/16/2022]
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Lebedev MV. Sulfur Adsorption at GaAs: Role of the Adsorbate Solvation and Reactivity in Modification of Semiconductor Surface Electronic Structure. J Phys Chem B 2001. [DOI: 10.1021/jp0035434] [Citation(s) in RCA: 15] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/28/2022]
Affiliation(s)
- Mikhail V. Lebedev
- A. F. Ioffe Physico-Technical Institute, Russian Academy of Sciences, Politekhnicheskaya 26, St. Petersburg 194021, Russia
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Kruse P, McLean JG, Kummel AC. Chemically selective adsorption of molecular oxygen on GaAs(100)c(2×8). J Chem Phys 2000. [DOI: 10.1063/1.1315600] [Citation(s) in RCA: 24] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/14/2022] Open
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Seker F, Meeker K, Kuech TF, Ellis AB. Surface Chemistry of Prototypical Bulk II-VI and III-V Semiconductors and Implications for Chemical Sensing. Chem Rev 2000; 100:2505-36. [PMID: 11749294 DOI: 10.1021/cr980093r] [Citation(s) in RCA: 149] [Impact Index Per Article: 6.2] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/28/2022]
Affiliation(s)
- F Seker
- Departments of Chemistry and Chemical Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706
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Miller EA, Richmond GL. Photocorrosion of n-GaAs and Passivation by Na2S: A Comparison of the (100), (110), and (111)B Faces. J Phys Chem B 1997. [DOI: 10.1021/jp962852k] [Citation(s) in RCA: 21] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/29/2022]
Affiliation(s)
- E. A. Miller
- Department of Chemistry and Materials Science Institute, University of Oregon, Eugene, Oregon 97403
| | - G. L. Richmond
- Department of Chemistry and Materials Science Institute, University of Oregon, Eugene, Oregon 97403
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Ow KN, Wang XW. First-principles pseudopotential calculations of passivated GaAs(001) surfaces. PHYSICAL REVIEW. B, CONDENSED MATTER 1996; 54:17661-17666. [PMID: 9985893 DOI: 10.1103/physrevb.54.17661] [Citation(s) in RCA: 10] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Berkovits VL, Gusev AO, Lantratov VM, L'vova TV, Pushnyi AB, Ulin VP, Paget D. Photoinduced formation of dimers at a liquid/(001)GaAs interface. PHYSICAL REVIEW. B, CONDENSED MATTER 1996; 54:R8369-R8372. [PMID: 9984597 DOI: 10.1103/physrevb.54.r8369] [Citation(s) in RCA: 8] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Paget D, Gusev AO, Berkovits VL. Sulfide-passivated GaAs (001). II. Electronic properties. PHYSICAL REVIEW. B, CONDENSED MATTER 1996; 53:4615-4622. [PMID: 9984019 DOI: 10.1103/physrevb.53.4615] [Citation(s) in RCA: 13] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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