Induced superconductivity in high-mobility two-dimensional electron gas in gallium arsenide heterostructures.
Nat Commun 2015;
6:7426. [PMID:
26067452 PMCID:
PMC4490403 DOI:
10.1038/ncomms8426]
[Citation(s) in RCA: 78] [Impact Index Per Article: 8.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/03/2014] [Accepted: 05/05/2015] [Indexed: 11/18/2022] Open
Abstract
Search for Majorana fermions renewed interest in semiconductor–superconductor interfaces, while a quest for higher-order non-Abelian excitations demands formation of superconducting contacts to materials with fractionalized excitations, such as a two-dimensional electron gas in a fractional quantum Hall regime. Here we report induced superconductivity in high-mobility two-dimensional electron gas in gallium arsenide heterostructures and development of highly transparent semiconductor–superconductor ohmic contacts. Supercurrent with characteristic temperature dependence of a ballistic junction has been observed across 0.6 μm, a regime previously achieved only in point contacts but essential to the formation of well separated non-Abelian states. High critical fields (>16 T) in NbN contacts enables investigation of an interplay between superconductivity and strongly correlated states in a two-dimensional electron gas at high magnetic fields.
Superconductivity has been induced in 2D electron gases, but high-field interplay between it and quantum Hall edge states remains elusive. Here the authors reach this regime by growing transparent superconducting contacts in GaAs, reporting modification of resistance in the quantum Hall regime.
Collapse