Tight-binding calculation of spin splittings in semiconductor superlattices

Flying electron spin control gates

The control of "flying" (or moving) spin qubits is an important functionality for the manipulation and exchange of quantum information between remote locations on a chip. Typically, gates based on electric or magnetic fields provide the necessary perturbation for their control either globally or at well-defined locations. Here, we demonstrate the dynamic control of moving electron spins via contactless gates that move together with the spins. The concept is realized using electron spins trapped and transported by moving potential dots defined by a surface acoustic wave (SAW). The SAW strain at the electron trapping site, which is set by the SAW amplitude, acts as a contactless, tunable gate that controls the precession frequency of the flying spins via the spin-orbit interaction. We show that the degree of precession control in moving dots exceeds previously reported results for unconstrained transport by an order of magnitude and is well accounted for by a theoretical model for the strain contribution to the spin-orbit interaction. This flying spin gate permits the realization of an acoustically driven optical polarization modulator based on electron spin transport, a key element for on-chip spin information processing with a photonic interface.

Spin-splitting calculation for zincblende semiconductors using an atomic bond-orbital model

We develop a 16-band atomic bond-orbital model (16ABOM) to compute the spin splitting induced by bulk inversion asymmetry in zincblende materials. This model is derived from the linear combination of atomic-orbital (LCAO) scheme such that the characteristics of the real atomic orbitals can be preserved to calculate the spin splitting. The Hamiltonian of 16ABOM is based on a similarity transformation performed on the nearest-neighbor LCAO Hamiltonian with a second-order Taylor expansion k at the Γ point. The spin-splitting energies in bulk zincblende semiconductors, GaAs and InSb, are calculated, and the results agree with the LCAO and first-principles calculations. However, we find that the spin-orbit coupling between bonding and antibonding p-like states, evaluated by the 16ABOM, dominates the spin splitting of the lowest conduction bands in the zincblende materials.

Cubic Dresselhaus spin-orbit coupling in 2D electron quantum dots

We study effects of the oft-neglected cubic Dresselhaus spin-orbit coupling (i.e., directly proportional p3) in GaAs/AlGaAs quantum dots. Using a semiclassical billiard model, we estimate the magnitude of the spin-orbit induced avoided crossings in a closed quantum dot in a Zeeman field. Using previous analyses based on random matrix theory, we calculate corresponding effects on the conductance through an open quantum dot. Combining our results with an experiment on an 8 microm2 quantum dot [D. M. Zumbühl, Phys. Rev. B 72, 081305 (2005)10.1103/PhysRevB.72.081305] suggests that (1) the GaAs Dresselhaus coupling constant gamma is approximately 9 eV A3, significantly less than the commonly cited value of 27.5 eV A3, and (2) the majority of the spin-flip effects can come from the cubic Dresselhaus term.