Resistivity and Hall effect of metallic oxygen-deficient YBa2Cu3Ox films in the normal state

Ultra-high critical current densities of superconducting YBa2Cu3O7-δ thin films in the overdoped state

The functional properties of cuprates are strongly determined by the doping state and carrier density. We present an oxygen doping study of YBa₂Cu₃O_7-δ (YBCO) thin films from underdoped to overdoped state, correlating the measured charge carrier density, [Formula: see text], the hole doping, p, and the critical current density, [Formula: see text]. Our results show experimental demonstration of strong increase of [Formula: see text] with [Formula: see text], up to Quantum Critical Point (QCP), due to an increase of the superconducting condensation energy. The ultra-high [Formula: see text] achieved, 90 MA cm^-2 at 5 K corresponds to about a fifth of the depairing current, i.e. a value among the highest ever reported in YBCO films. The overdoped regime is confirmed by a sudden increase of [Formula: see text], associated to the reconstruction of the Fermi-surface at the QCP. Overdoping YBCO opens a promising route to extend the current carrying capabilities of rare-earth barium copper oxide (REBCO) coated conductors for applications.

Improving the Josephson energy in high-Tc superconducting junctions for ultra-fast electronics

We report the electrical transport of thin vertically-stacked Josephson tunnel junctions. The devices were fabricated using 16 nm thick GdBa₂Cu₃O_7-δ electrodes and 1-4 nm SrTiO₃ as an insulating barrier. The results show Josephson coupling for junctions with SrTiO₃ barriers of 1 and 2 nm. Subtracting the residual current in the Fraunhofer patterns, energies of 3.1 mV and 5.7 mV at 12 K are obtained for STO barriers of 1 nm and 2 nm, respectively. The residual current may be related to the contribution of pinholes and thickness fluctuations in the STO barrier. These values are promising for reducing the influence of thermal noise and increasing the frequency operation rate in superconducting devices using high-temperature superconductors.

Multi-terminal Transistor-like Devices Based on Strongly Correlated Metallic Oxides for Neuromorphic Applications

Memristive devices are attracting a great attention for memory, logic, neural networks, and sensing applications due to their simple structure, high density integration, low-power consumption, and fast operation. In particular, multi-terminal structures controlled by active gates, able to process and manipulate information in parallel, would certainly provide novel concepts for neuromorphic systems. In this way, transistor-based synaptic devices may be designed, where the synaptic weight in the postsynaptic membrane is encoded in a source-drain channel and modified by presynaptic terminals (gates). In this work, we show the potential of reversible field-induced metal-insulator transition (MIT) in strongly correlated metallic oxides for the design of robust and flexible multi-terminal memristive transistor-like devices. We have studied different structures patterned on YBa2Cu3O7-δ films, which are able to display gate modulable non-volatile volume MIT, driven by field-induced oxygen diffusion within the system. The key advantage of these materials is the possibility to homogeneously tune the oxygen diffusion not only in a confined filament or interface, as observed in widely explored binary and complex oxides, but also in the whole material volume. Another important advantage of correlated oxides with respect to devices based on conducting filaments is the significant reduction of cycle-to-cycle and device-to-device variations. In this work, we show several device configurations in which the lateral conduction between a drain-source channel (synaptic weight) is effectively controlled by active gate-tunable volume resistance changes, thus providing the basis for the design of robust and flexible transistor-based artificial synapses.

Anomalies in the pseudogap phase of the cuprates: competing ground states and the role of umklapp scattering

Over the past two decades, advances in computational algorithms have revealed a curious property of the two-dimensional Hubbard model (and related theories) with hole doping: the presence of close-in-energy competing ground states that display very different physical properties. On the one hand, there is a complicated state exhibiting intertwined spin, charge, and pair density wave orders. We call this 'type A'. On the other hand, there is a uniform d-wave superconducting state that we denote as 'type B'. We advocate, with the support of both microscopic theoretical calculations and experimental data, dividing the high-temperature cuprate superconductors into two corresponding families, whose properties reflect either the type A or type B ground states at low temperatures. We review the anomalous properties of the pseudogap phase that led us to this picture, and present a modern perspective on the role that umklapp scattering plays in these phenomena in the type B materials. This reflects a consistent framework that has emerged over the last decade, in which Mott correlations at weak coupling drive the formation of the pseudogap. We discuss this development, recent theory and experiments, and open issues.

Electrochemical Tuning of Metal Insulator Transition and Nonvolatile Resistive Switching in Superconducting Films

Modulation of carrier concentration in strongly correlated oxides offers the unique opportunity to induce different phases in the same material, which dramatically change their physical properties, providing novel concepts in oxide electronic devices with engineered functionalities. This work reports on the electric manipulation of the superconducting to insulator phase transition in YBa2Cu3O7-δ thin films by electrochemical oxygen doping. Both normal state resistance and the superconducting critical temperature can be reversibly manipulated in confined active volumes of the film by gate-tunable oxygen diffusion. Vertical and lateral oxygen mobility may be finely modulated, at the micro- and nano-scale, by tuning the applied bias voltage and operating temperature thus providing the basis for the design of homogeneous and flexible transistor-like devices with loss-less superconducting drain-source channels. We analyze the experimental results in light of a theoretical model, which incorporates thermally activated and electrically driven volume oxygen diffusion.

The effects of oxygen in spinel oxide Li1+xTi2-xO4-δ thin films

The evolution from superconducting LiTi₂O_4-δ to insulating Li₄Ti₅O₁₂ thin films has been studied by precisely tuning the oxygen pressure in the sample fabrication process. In superconducting LiTi₂O_4-δ films, with the increase of oxygen pressure, the oxygen vacancies are filled gradually and the c-axis lattice constant decreases. When the oxygen pressure increases to a certain critical value, the c-axis lattice constant becomes stable, which implies that the sample has been completely converted to Li₄Ti₅O₁₂ phase. The two processes can be manifested by the angular bright-field images of the scanning transmission electron microscopy techniques. The transition temperature (T _ch ) of magnetoresistance from the positive to the negative shows a nonmonotonic behavior, i.e. first decrease and then increase, with the increase of oxygen pressure. We suggest that the decrease T_ch can be attributed to the suppressing of orbital-related state, and the inhomogeneous phase separated regions contribute positive MR and thereby lead to the reverse relation between T_ch and oxygen pressure.

Structural and functional modifications induced by X-ray nanopatterning in Bi-2212 single crystals

X-ray nanopatterning induces both mosaicity increase and oxygen depletion in the high-T_c superconductor Bi₂Sr₂CaCu₂O_8+δ.

Geometrical vortex lattice pinning and melting in YBaCuO submicron bridges

Since the discovery of high-temperature superconductors (HTSs), most efforts of researchers have been focused on the fabrication of superconducting devices capable of immobilizing vortices, hence of operating at enhanced temperatures and magnetic fields. Recent findings that geometric restrictions may induce self-arresting hypervortices recovering the dissipation-free state at high fields and temperatures made superconducting strips a mainstream of superconductivity studies. Here we report on the geometrical melting of the vortex lattice in a wide YBCO submicron bridge preceded by magnetoresistance (MR) oscillations fingerprinting the underlying regular vortex structure. Combined magnetoresistance measurements and numerical simulations unambiguously relate the resistance oscillations to the penetration of vortex rows with intermediate geometrical pinning and uncover the details of geometrical melting. Our findings offer a reliable and reproducible pathway for controlling vortices in geometrically restricted nanodevices and introduce a novel technique of geometrical spectroscopy, inferring detailed information of the structure of the vortex system through a combined use of MR curves and large-scale simulations.

Correlation between superfluid density and T(C) of underdoped YBa2Cu3O6+x near the superconductor-insulator transition

We report measurements of the ab-plane superfluid density n(s) (magnetic penetration depth lambda) of heavily underdoped films of YBa2Cu3O6+x, with T(C)'s from 6 to 50 K. We find the characteristic length for vortex unbinding transition equal to the film thickness, suggesting strongly coupled CuO2 layers. At the lowest dopings, T(C) is as much as 5 times larger than the upper limit set by the 2D Kosterlitz-Thouless-Berezinskii transition temperature calculated for individual CuO2 bilayers. Our main finding is that T(C) is not proportional to n(s)(0); instead, we find T(C) proportional to ns(1/2.3+/-0.4). This conflicts with a popular point of view that quasi-2D thermal phase fluctuations determine the transition temperature.

Anomalous weak magnetism in superconducting YBa2Cu3O6+x

For some time now, there has been considerable experimental and theoretical effort to understand the role of the normal-state "pseudogap" phase in underdoped high-temperature cuprate superconductors. Recent debate has centered on the question of whether the pseudogap is independent of superconductivity. We provide evidence from zero-field muon spin relaxation measurements in YBa2Cu3O6+x for the presence of small spontaneous static magnetic fields of electronic origin intimately related to the pseudogap transition. Our most significant finding is that, for optimal doping, these weak static magnetic fields appear well below the superconducting transition temperature. The two compositions measured suggest the existence of a quantum critical point somewhat above optimal doping.

Metal-insulator crossover in superconducting cuprates in strong magnetic fields

The metal-insulator crossover of the in-plane resistivity upon temperature decrease, recently observed in several classes of cuprate superconductors, when a strong magnetic field suppresses the superconductivity, is explained using the U(1)xSU(2) Chern-Simons gauge field theory. The origin of this crossover is the same as that for a similar phenomenon observed in heavily underdoped cuprates without magnetic field. It is due to the interplay between the diffusive motion of the charge carriers and the "peculiar" localization effect due to short-range antiferromagnetic order. We also calculate the in-plane transverse magnetoresistance which is in fairly good agreement with available experimental data.

The magnetic excitation spectrum and thermodynamics of high-Tc superconductors

Inelastic neutron scattering was used to study the wave vector- and frequency-dependent magnetic fluctuations in single crystals of superconducting YBa2Cu3O6+x. The spectra contain several important features, including a gap in the superconducting state, a pseudogap in the normal state, and the much-discussed resonance peak. The appearance of the pseudogap determined from transport and nuclear resonance coincides with formation of the resonance in the magnetic excitations. The exchange energy associated with the resonance has the temperature and doping dependences as well as the magnitude to describe approximately the electronic specific heat near the superconducting transition temperature (Tc).

Filamentary microstructure and linear temperature dependence of normal state transport in optimized high temperature superconductors

A filamentary model of "metallic" conduction in layered high temperature superconductive cuprates explains the concurrence of normal state resistivities (Hall mobilities) linear in T (T-2) with optimized superconductivity. The model predicts the lowest temperature T0 for which linearity holds and it also predicts the maximum superconductive transition temperature Tc. The theory abandons the effective medium approximation that includes Fermi liquid as well as all other nonpercolative models in favor of countable smart basis states.