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Tsatsoulis T, Sakong S, Groß A, Grüneis A. Reaction energetics of hydrogen on Si(100) surface: A periodic many-electron theory study. J Chem Phys 2018; 149:244105. [DOI: 10.1063/1.5055706] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.2] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/15/2022] Open
Affiliation(s)
- Theodoros Tsatsoulis
- Max Planck Institute for Solid State Research, Heisenbergstrasse 1, 70569 Stuttgart, Germany
- Institute for Theoretical Physics, Vienna University of Technology, Wiedner Hauptstrasse 8-10, 1040 Vienna, Austria
| | - Sung Sakong
- Institute of Theoretical Chemistry, Ulm University, Albert-Einstein-Allee 11, 89081 Ulm, Germany
| | - Axel Groß
- Institute of Theoretical Chemistry, Ulm University, Albert-Einstein-Allee 11, 89081 Ulm, Germany
| | - Andreas Grüneis
- Max Planck Institute for Solid State Research, Heisenbergstrasse 1, 70569 Stuttgart, Germany
- Institute for Theoretical Physics, Vienna University of Technology, Wiedner Hauptstrasse 8-10, 1040 Vienna, Austria
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2
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Biswas S, Deshpande SV, Dunn DN, Narasimhan S. Tuning patterning conditions by co-adsorption of gases: Br2 and H2 on Si(001). J Chem Phys 2013; 139:184713. [PMID: 24320297 DOI: 10.1063/1.4828702] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/14/2022] Open
Abstract
We have studied the co-adsorption of Br2 and H2 on Si(001), and obtained co-adsorption energies and the surface phase diagram as a function of the chemical potential and pressure of the two gases. To do this, we have used density functional theory calculations in combination with ab initio atomistic thermodynamics. Over large ranges of bromine and hydrogen chemical potentials, the favored configuration is found to be either one with only Br atoms adsorbed on the surface, at full coverage, in a (3 × 2) pattern, or a fully H-covered surface in a (2 × 1) structure. However, we also find regions of the phase diagram where there are configurations with either only Br atoms, or Br and H atoms, arranged in a two-atom-wide checkerboard pattern with a (4 × 2) surface unit cell. Most interestingly, we find that by co-adsorbing with H2, we bring this pattern into a region of the phase diagram corresponding to pressures that are significantly higher than those where it is observed with Br2 alone. We also find small regions of the phase diagram with several other interesting patterns.
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Affiliation(s)
- Sananda Biswas
- Theoretical Sciences Unit, Jawaharlal Nehru Centre for Advanced Scientific Research, Jakkur, Bangalore - 560064, India
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3
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Reaction between Gas-phase Hydrogen Atom and Chemisorbed Bromine Atoms on a Silicon(001)-(2X1) Surface. B KOREAN CHEM SOC 2007. [DOI: 10.5012/bkcs.2007.28.12.2271] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/20/2022]
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4
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Shi J, Chuan Kang H, Tok ES, Zhang J. Evidence for hydrogen desorption through both interdimer and intradimer paths from Si(100)-(2 x 1). J Chem Phys 2007; 123:34701. [PMID: 16080749 DOI: 10.1063/1.1937392] [Citation(s) in RCA: 14] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/14/2022] Open
Abstract
Despite intensive work there are still controversial issues about desorption and adsorption of hydrogen on Si(100)-(2 x 1). In particular, the relative importance of the various interdimer- and intradimer-desorption paths is not clear. Nanosecond-pulse-laser desorption data have been used to argue that the 4H interdimer path is important, while data from thermal-desorption time-of-flight measurements suggest a large translationally hot contribution which cannot arise from the 4H interdimer path. The observation of a translationally hot desorption fraction at low to medium coverage can be accounted for by including the 2H interdimer path in quantum dynamical calculations. In this paper we investigate this issue further and present evidence that supports the inclusion of the intradimer path. Specifically, our results show that the intradimer and 3H interdimer paths provide the major contributions to the translationally hot fraction in the desorbate. Our conclusions are based on density-functional calculations of hydrogen translational excitation, mean-field analysis of thermal-desorption experiments over a range of ramp rate, and Monte Carlo simulations of nanosecond-pulse-laser experiments.
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Affiliation(s)
- J Shi
- Department of Chemistry, National University of Singapore
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5
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Li Q, Tok ES, Zhang J, Kang HC. Reassessment of the molecular mechanisms for H2 thermal desorption pathways from Si(1-x)Gex(001)-(2x1) surfaces. J Chem Phys 2007; 126:044706. [PMID: 17286498 DOI: 10.1063/1.2432114] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/14/2022] Open
Abstract
One of the aims of temperature-programmed desorption experiments is to facilitate identification of molecular pathways for desorption. The authors provide a rigorous assessment of the difficulty of doing this for H(2)/Si((1-x))Ge(x)(100)-(2x1). An extensive series of density functional calculations using both cluster and slab methods is performed. The resulting desorption barriers are used to compute thermal desorption spectra. A mean-field approximation is used to treat the populations of the various adsites present on the surface. The authors find a number of significant results. First, slab and cluster calculations do not appear to predict consistent differences in desorption barriers between intradimer and interdimer channels. Second, they find that a germanium atom affects the desorption barrier significantly only if it is present at the adsite. A germanium atom adjacent to an adsite or in the second layer influences the desorption barrier negligibly. Both cluster and slab calculations consistently predict a decrease of approximately 0.3-0.4 eV per germanium atom at the adsite. Third, current analysis of thermal desorption spectra in the literature, although yielding good fits to experimental data, is not rigorous. The authors' calculated spectra can be fitted rather well by assuming, as in current analysis of experimental data, three independent second-order channels, even though the underlying molecular pathways used to calculate the spectra are considerably different. Fourth, the authors' results highlight the importance of treating the rearrangement of hydrogen and germanium atoms at the surface during the thermal desorption process. This is generally not taken into account in kinetics modeling of desorption spectra.
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Affiliation(s)
- Qiang Li
- Department of Chemistry, National University of Singapore, 10 Kent Ridge Crescent, Singapore 119260, Singapore
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6
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Ferng SS, Lin CT, Yang KM, Lin DS, Chiang TC. Atomistic view of the recombinative desorption of H2 from H/Si(100). PHYSICAL REVIEW LETTERS 2005; 94:196103. [PMID: 16090191 DOI: 10.1103/physrevlett.94.196103] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/04/2005] [Indexed: 05/03/2023]
Abstract
Scanning tunneling microscopy is employed to investigate the recombinative desorption of H2 from hydrogenated Si(100) surfaces consisting of dihydride (SiH2) and monohydride (SiH) surface species organized in (1 x 1), (3 x 1), and (2 x 1) configurations. The results show that desorption from dihydrides involves a pair of neighboring dihydrides linked along the tetrahedral bond direction. Dihydrides in (3 x 1) domains are separated in the same direction by monohydrides, and desorption from a pair is geometrically impossible. The same desorption mechanism nevertheless applies via first a position switching of dihydrides with neighboring monohydrides.
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Affiliation(s)
- S-S Ferng
- Institute of Physics, National Chiao-Tung University, Hsinchu, Taiwan
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7
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HBr Formation from the Reaction between Gas-phase Bromine Atom and Vibrationally Excited Chemisorbed Hydrogen Atoms on a Si(001)-(2 X1) Surface. B KOREAN CHEM SOC 2004. [DOI: 10.5012/bkcs.2004.25.8.1217] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/20/2022]
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8
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Rahman F, Kuroda M, Kiyonaga T, Khanom F, Tsurumaki H, Inanaga S, Namiki A. Modulated hydrogen beam study of adsorption-induced desorption of deuterium from Si(100)-3×1:D surfaces. J Chem Phys 2004; 121:3221-7. [PMID: 15291634 DOI: 10.1063/1.1772758] [Citation(s) in RCA: 16] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/15/2022] Open
Abstract
We have studied the kinetic mechanism of the adsorption-induced-desorption (AID) reaction, H+D/Si(100) --> D2. Using a modulated atomic hydrogen beam, two different types of AID reaction are revealed: one is the fast AID reaction occurring only at the beam on-cycles and the other the slow AID reaction occurring even at the beam off-cycles. Both the fast and slow AID reactions show the different dependence on surface temperature Ts, suggesting that their kinetic mechanisms are different. The fast AID reaction overwhelms the slow one in the desorption yield for 300 K < or = Ts < or = 650 K. It proceeds along a first-order kinetics with respect to the incident H flux. Based on the experimental results, both two AID reactions are suggested to occur only on the 3x1 dihydride phase accumulated during surface exposure to H atoms. Possible mechanisms for the AID reactions are discussed.
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Affiliation(s)
- F Rahman
- Department of Electrical Engineering, Kyushu Institute of Technology, Kitakyushu 804-8550, Japan
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9
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Mui C, Bent SF, Musgrave CB. A Density Functional Theory Study on the Effect of Ge Alloying on Hydrogen Desorption from SiGe Alloy Surfaces. J Phys Chem B 2004; 108:6336-50. [DOI: 10.1021/jp037948a] [Citation(s) in RCA: 9] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/29/2022]
Affiliation(s)
- Collin Mui
- Department of Chemical Engineering, Stanford University, Stanford California 94305
| | - Stacey F. Bent
- Department of Chemical Engineering, Stanford University, Stanford California 94305
| | - Charles B. Musgrave
- Departments of Chemical Engineering and Materials Science and Engineering, Stanford University, Stanford California 94305
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10
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Formation of Hydroxyl Radical from the Hydrogen Chemisorbed Silicon Surface by Incident Oxygen Atoms. B KOREAN CHEM SOC 2003. [DOI: 10.5012/bkcs.2003.24.7.986] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/20/2022]
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11
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Ree J, Kim YH, Shin HK. Oxygen Atom Abstraction of Hydrogen Chemisorbed on a Silicon Surface. J Phys Chem A 2003. [DOI: 10.1021/jp030227r] [Citation(s) in RCA: 6] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/16/2022]
Affiliation(s)
- J. Ree
- Department of Chemistry Education, Chonnam National University, Kwangju, Korea
| | - Y. H. Kim
- Department of Chemistry and Center for Chemical Dynamics, Inha University, Inchon, Korea
| | - H. K. Shin
- Department of Chemistry, University of Nevada, Reno, Nevada 89557
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12
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Satake K, Graves DB. Silicon epitaxial growth on the Si(001)2×1 surface from silane using dynamic Monte Carlo simulations. J Chem Phys 2003. [DOI: 10.1063/1.1559151] [Citation(s) in RCA: 10] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/14/2022] Open
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13
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Tok ES, Engstrom JR, Kang HC. Precursor states of atomic hydrogen on the Si(100)-(2×1) surface. J Chem Phys 2003. [DOI: 10.1063/1.1536959] [Citation(s) in RCA: 13] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/14/2022] Open
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14
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Filippi C, Healy SB, Kratzer P, Pehlke E, Scheffler M. Quantum Monte Carlo calculations of H2 dissociation on Si(001). PHYSICAL REVIEW LETTERS 2002; 89:166102. [PMID: 12398737 DOI: 10.1103/physrevlett.89.166102] [Citation(s) in RCA: 40] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/19/2002] [Indexed: 05/24/2023]
Abstract
The dissociative adsorption of H2 on the Si(001) surface is theoretically investigated for several reaction pathways using quantum Monte Carlo methods. Our reaction energies and barriers are at large variance with those obtained with commonly used approximate exchange-correlation density functionals. Our results for adsorption support recent experimental findings, while, for desorption, the calculations give barriers in excess of the presently accepted experimental value, pinpointing the role of coverage effects and desorption from steps.
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Affiliation(s)
- Claudia Filippi
- Instituut Lorentz, Universiteit Leiden, Niels Bohrweg 2, NL-2333 CA, The Netherlands
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15
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Choi CH, Liu DJ, Evans JW, Gordon MS. Passive and active oxidation of Si(100) by atomic oxygen: a theoretical study of possible reaction mechanisms. J Am Chem Soc 2002; 124:8730-40. [PMID: 12121118 DOI: 10.1021/ja012454h] [Citation(s) in RCA: 44] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/29/2022]
Abstract
Reaction mechanisms for oxidation of the Si(100) surface by atomic oxygen were studied with high-level quantum mechanical methods in combination with a hybrid QM/MM (Quantum mechanics/Molecular Mechanics) method. Consistent with previous experimental and theoretical results, three structures, "back-bond", "on-dimer", and "dimer-bridge", are found to be the most stable initial surface products for O adsorption (and in the formation of SiO(2) films, i.e., passive oxidation). All of these structures have significant diradical character. In particular, the "dimer-bridge" is a singlet diradical. Although the ground state of the separated reactants, O+Si(100), is a triplet, once the O atom makes a chemical bond with the surface, the singlet potential energy surface is the ground state. With mild activation energy, these three surface products can be interconverted, illustrating the possibility of the thermal redistribution among the initial surface products. Two channels for SiO desorption (leading to etching, i.e., active oxidation) have been found, both of which start from the back-bond structure. These are referred to as the silicon-first (SF) and oxygen-first (OF) mechanisms. Both mechanisms require an 89.8 kcal/mol desorption barrier, in good agreement with the experimental estimates of 80-90 kcal/mol. "Secondary etching" channels occurring after initial etching may account for other lower experimental desorption barriers. The calculated 52.2 kcal/mol desorption barrier for one such secondary etching channel suggests that the great variation in reported experimental barriers for active oxidation may be due to these different active oxidation channels.
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Affiliation(s)
- Cheol Ho Choi
- Department of Chemistry, College of Natural Sciences, Kyungpook National University, Taegu 702-701, South Korea
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16
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Hydrogen Surface Coverage Dependence of the Reaction between Gaseous and Chemisorbed Hydrogen Atoms on a Silicon Surface. B KOREAN CHEM SOC 2002. [DOI: 10.5012/bkcs.2002.23.2.205] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/20/2022]
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17
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Dürr M, Höfer U. Stereochemistry on Si(001): angular dependence of H2 dissociation. PHYSICAL REVIEW LETTERS 2002; 88:076107. [PMID: 11863921 DOI: 10.1103/physrevlett.88.076107] [Citation(s) in RCA: 10] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/30/2001] [Indexed: 05/23/2023]
Abstract
The angular dependence of the dissociative adsorption of molecular hydrogen at terrace and step sites of vicinal single-domain Si(001) surfaces was investigated by means of molecular beam techniques and optical second-harmonic generation. A strongly anisotropic behavior was observed for terrace adsorption with polar distributions of cos3theta and cos12theta parallel and perpendicular to the dimer, respectively. The D(B)-steps show enhanced reactivity under glancing incidence in the upwards direction. The results are traced back to the directionality of the covalent surface bonds.
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Affiliation(s)
- Michael Dürr
- Max-Planck-Institut für Quantenoptik, D-85740 Garching, Germany
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18
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Dürr M, Hu Z, Biedermann A, Höfer U, Heinz TF. Real-space study of the pathway for dissociative adsorption of H2 on Si(001). PHYSICAL REVIEW LETTERS 2002; 88:046104. [PMID: 11801144 DOI: 10.1103/physrevlett.88.046104] [Citation(s) in RCA: 15] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/01/2001] [Indexed: 05/23/2023]
Abstract
Dissociative adsorption of molecular hydrogen on clean Si(001) surfaces has been investigated by means of scanning tunneling microscopy. The dissociated hydrogen atoms are found to occupy Si atoms of adjacent dimers. In addition to this interdimer configuration associated with the adsorption of isolated hydrogen molecules, pairs of adjacent doubly occupied dimers are readily formed. They arise from the enhanced reactivity of partially occupied dimers following the initial H2 adsorption step. The results are considered in light of recent adsorption and desorption measurements.
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Affiliation(s)
- M Dürr
- Physics Department, Columbia University, New York, New York 10027, USA
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19
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Healy SB, Filippi C, Kratzer P, Penev E, Scheffler M. Role of electronic correlation in the Si(100) reconstruction: a quantum Monte Carlo study. PHYSICAL REVIEW LETTERS 2001; 87:016105. [PMID: 11461481 DOI: 10.1103/physrevlett.87.016105] [Citation(s) in RCA: 18] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/21/2001] [Indexed: 05/23/2023]
Abstract
Recent low-temperature scanning tunneling experiments have questioned the generally accepted picture of buckled silicon dimers as the ground state reconstruction of the Si(100) surface, undermining the ability of density functional theory to accurately describe electronic correlations at surfaces. We present quantum Monte Carlo calculations on large cluster models of the surface, and conclude that buckling remains energetically favorable even when the present-day best treatment of electronic correlation is employed. The implications for experimental interpretation are discussed.
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Affiliation(s)
- S B Healy
- Physics Department, National University of Ireland, Cork, Ireland
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20
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Rechtsteiner GA, Hampe O, Jarrold MF. Synthesis and Temperature-Dependence of Hydrogen-Terminated Silicon Clusters. J Phys Chem B 2001. [DOI: 10.1021/jp004223n] [Citation(s) in RCA: 43] [Impact Index Per Article: 1.9] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/29/2022]
Affiliation(s)
- Gregory A. Rechtsteiner
- Department of Chemistry, Northwestern University, 2145 Sheridan Road, Evanston, Illinois 60208
| | - Oliver Hampe
- Department of Chemistry, Northwestern University, 2145 Sheridan Road, Evanston, Illinois 60208
| | - Martin F. Jarrold
- Department of Chemistry, Northwestern University, 2145 Sheridan Road, Evanston, Illinois 60208
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21
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Steckel JA, Phung T, Jordan KD, Nachtigall P. Concerted Use of Slab and Cluster Models in an ab Initio Study of Hydrogen Desorption from the Si(100) Surface. J Phys Chem B 2001. [DOI: 10.1021/jp0035176] [Citation(s) in RCA: 37] [Impact Index Per Article: 1.6] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/30/2022]
Affiliation(s)
- J. A. Steckel
- Department of Chemistry and Center for Molecular and Materials Simulations, University of Pittsburgh, Pittsburgh, Pennsylvania 15260
| | - T. Phung
- Department of Chemistry and Center for Molecular and Materials Simulations, University of Pittsburgh, Pittsburgh, Pennsylvania 15260
| | - K. D. Jordan
- Department of Chemistry and Center for Molecular and Materials Simulations, University of Pittsburgh, Pittsburgh, Pennsylvania 15260
| | - P. Nachtigall
- J. Heyrovský Institute of Physical Chemistry, Academy of Sciences of the Czech Republic and Center for Complex Molecular Systems and Biomolecules, Dolejškova 3, 182 23 Prague 8, Czech Republic
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22
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Korkin AA, Demkov AA, Tanpipat N, Andzelm J. Theoretical investigation of the initial reaction of the NO decomposition on the Si (100) (2×1) reconstructed surface. J Chem Phys 2000. [DOI: 10.1063/1.1316040] [Citation(s) in RCA: 10] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/14/2022] Open
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23
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Shimokawa S, Namiki A, N.-Gamo M, Ando T. Temperature dependence of atomic hydrogen-induced surface processes on Ge(100): Thermal desorption, abstraction, and collision-induced desorption. J Chem Phys 2000. [DOI: 10.1063/1.1311783] [Citation(s) in RCA: 24] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/14/2022] Open
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24
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Buehler EJ, Boland JJ. Dimer preparation that mimics the transition state for the adsorption of H2 on the Si(100)-2 x 1 surface. Science 2000; 290:506-9. [PMID: 11039929 DOI: 10.1126/science.290.5491.506] [Citation(s) in RCA: 38] [Impact Index Per Article: 1.6] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/02/2022]
Abstract
A chemically induced dimer configuration was prepared on the silicon (Si) (100) surface and was characterized by scanning tunneling microscopy (STM) and spectroscopy (STS). These prepared dimers, which are essentially untilted and differ both electronically and structurally from the dynamically tilting dimers normally found on this surface, are more reactive than normal dimers. For molecular hydrogen (H2) adsorption, the enhancement is about 10(9) at room temperature. There is no appreciable barrier for the H2 reaction at prepared sites, indicating the prepared configuration closely approximates the actual dimer structure in the transition state. This previously unknown ability to prepare specific surface configurations has important implications for understanding and controlling reaction dynamics on semiconductor surfaces.
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Affiliation(s)
- E J Buehler
- Venable and Kenan Laboratories, Department of Chemistry, University of North Carolina at Chapel Hill, Chapel Hill, NC 27599-3290, USA
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25
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Dürr M, Raschke MB, Höfer U. Effect of beam energy and surface temperature on the dissociative adsorption of H2 on Si(001). J Chem Phys 1999. [DOI: 10.1063/1.480395] [Citation(s) in RCA: 58] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/14/2022] Open
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26
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Ree J, Shin HK. Interaction of gas-phase atomic chlorine with a silicon surface: Reactions on bare and hydrogen-chemisorbed surface sites. J Chem Phys 1999. [DOI: 10.1063/1.480375] [Citation(s) in RCA: 8] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/14/2022] Open
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28
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Yang C, Kang HC. Geometry of dimer reconstruction on the C(100), Si(100), and Ge(100) surfaces. J Chem Phys 1999. [DOI: 10.1063/1.479039] [Citation(s) in RCA: 33] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/14/2022] Open
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29
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Penev E, Kratzer P, Scheffler M. Effect of the cluster size in modeling the H2 desorption and dissociative adsorption on Si(001). J Chem Phys 1999. [DOI: 10.1063/1.478279] [Citation(s) in RCA: 143] [Impact Index Per Article: 5.7] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/14/2022] Open
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30
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Kim WK, Ree J, Shin HK. Eley−Rideal Dynamics of the Chlorine Atom Abstraction of Hydrogen Chemisorbed on Silicon. J Phys Chem A 1999. [DOI: 10.1021/jp982927f] [Citation(s) in RCA: 10] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/28/2022]
Affiliation(s)
- W. K. Kim
- Department of Chemistry,‡ University of Nevada, Reno, Nevada 89557
| | - J. Ree
- Department of Chemistry,‡ University of Nevada, Reno, Nevada 89557
| | - H. K. Shin
- Department of Chemistry,‡ University of Nevada, Reno, Nevada 89557
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31
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Robinson Brown A, Doren DJ. Energetics of silicon hydrides on the Si(100)-(2×1) surface. J Chem Phys 1998. [DOI: 10.1063/1.476814] [Citation(s) in RCA: 18] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/14/2022] Open
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32
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Nakamura KG. Potential energy surface of hydrogen abstraction by an H atom on the monohydride Si(100) surface. Chem Phys Lett 1998. [DOI: 10.1016/s0009-2614(97)01453-x] [Citation(s) in RCA: 9] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/18/2022]
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Abstract
▪ Abstract We review the young field of ab initio molecular dynamics applied to molecule-surface reactions. The techniques of ab initio molecular dynamics include methods that use an analytic potential energy function fit to ab initio data and those that are fully ab initio. In this review, we focus on the insights provided by ab initio–based molecular dynamics that are currently unavailable from experimental studies and discuss current techniques and limitations. As an example of how different aspects of a problem can be tackled with state-of-the-art theoretical tools, we consider the well-studied case of H2 desorption and adsorption from the Si(100)-2 × 1 surface.
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Affiliation(s)
- M R Radeke
- Department of Chemistry and Biochemistry, Box 951569, University of California, Los Angeles, CA 90095-1569, USA
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34
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Takamine Y, Namiki A. Angular distribution of HD produced in the abstraction reaction by incident D atoms on the monohydrided Si(100). J Chem Phys 1997. [DOI: 10.1063/1.473957] [Citation(s) in RCA: 18] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/14/2022] Open
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