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Chen J, Wu K, Hu W, Yang J. High-Throughput Inverse Design for 2D Ferroelectric Rashba Semiconductors. J Am Chem Soc 2022; 144:20035-20046. [DOI: 10.1021/jacs.2c08827] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/05/2022]
Affiliation(s)
- Jiajia Chen
- Department of Chemical Physics, Hefei National Research Center for Physical Sciences at the Microscale, Synergetic Innovation Center of Quantum Information and Quantum Physics, Anhui Center for Applied Mathematics, and School of Data Science, University of Science and Technology of China, Hefei, Anhui230026, China
| | - Kai Wu
- Department of Chemical Physics, Hefei National Research Center for Physical Sciences at the Microscale, Synergetic Innovation Center of Quantum Information and Quantum Physics, Anhui Center for Applied Mathematics, and School of Data Science, University of Science and Technology of China, Hefei, Anhui230026, China
| | - Wei Hu
- Department of Chemical Physics, Hefei National Research Center for Physical Sciences at the Microscale, Synergetic Innovation Center of Quantum Information and Quantum Physics, Anhui Center for Applied Mathematics, and School of Data Science, University of Science and Technology of China, Hefei, Anhui230026, China
| | - Jinlong Yang
- Department of Chemical Physics, Hefei National Research Center for Physical Sciences at the Microscale, Synergetic Innovation Center of Quantum Information and Quantum Physics, Anhui Center for Applied Mathematics, and School of Data Science, University of Science and Technology of China, Hefei, Anhui230026, China
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Fernandez A, Acharya M, Lee HG, Schimpf J, Jiang Y, Lou D, Tian Z, Martin LW. Thin-Film Ferroelectrics. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2108841. [PMID: 35353395 DOI: 10.1002/adma.202108841] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/02/2021] [Revised: 03/03/2022] [Indexed: 06/14/2023]
Abstract
Over the last 30 years, the study of ferroelectric oxides has been revolutionized by the implementation of epitaxial-thin-film-based studies, which have driven many advances in the understanding of ferroelectric physics and the realization of novel polar structures and functionalities. New questions have motivated the development of advanced synthesis, characterization, and simulations of epitaxial thin films and, in turn, have provided new insights and applications across the micro-, meso-, and macroscopic length scales. This review traces the evolution of ferroelectric thin-film research through the early days developing understanding of the roles of size and strain on ferroelectrics to the present day, where such understanding is used to create complex hierarchical domain structures, novel polar topologies, and controlled chemical and defect profiles. The extension of epitaxial techniques, coupled with advances in high-throughput simulations, now stands to accelerate the discovery and study of new ferroelectric materials. Coming hand-in-hand with these new materials is new understanding and control of ferroelectric functionalities. Today, researchers are actively working to apply these lessons in a number of applications, including novel memory and logic architectures, as well as a host of energy conversion devices.
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Affiliation(s)
- Abel Fernandez
- Department of Materials Science and Engineering, University of California, Berkeley, Berkeley, CA, 94720, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
| | - Megha Acharya
- Department of Materials Science and Engineering, University of California, Berkeley, Berkeley, CA, 94720, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
| | - Han-Gyeol Lee
- Department of Materials Science and Engineering, University of California, Berkeley, Berkeley, CA, 94720, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
| | - Jesse Schimpf
- Department of Materials Science and Engineering, University of California, Berkeley, Berkeley, CA, 94720, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
| | - Yizhe Jiang
- Department of Materials Science and Engineering, University of California, Berkeley, Berkeley, CA, 94720, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
| | - Djamila Lou
- Department of Materials Science and Engineering, University of California, Berkeley, Berkeley, CA, 94720, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
| | - Zishen Tian
- Department of Materials Science and Engineering, University of California, Berkeley, Berkeley, CA, 94720, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
| | - Lane W Martin
- Department of Materials Science and Engineering, University of California, Berkeley, Berkeley, CA, 94720, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
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3
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Nascimento GM, Ogoshi E, Fazzio A, Acosta CM, Dalpian GM. High-throughput inverse design and Bayesian optimization of functionalities: spin splitting in two-dimensional compounds. Sci Data 2022; 9:195. [PMID: 35487920 PMCID: PMC9054849 DOI: 10.1038/s41597-022-01292-8] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/06/2021] [Accepted: 03/03/2022] [Indexed: 11/15/2022] Open
Abstract
The development of spintronic devices demands the existence of materials with some kind of spin splitting (SS). In this Data Descriptor, we build a database of ab initio calculated SS in 2D materials. More than that, we propose a workflow for materials design integrating an inverse design approach and a Bayesian inference optimization. We use the prediction of SS prototypes for spintronic applications as an illustrative example of the proposed workflow. The prediction process starts with the establishment of the design principles (the physical mechanism behind the target properties), that are used as filters for materials screening, and followed by density functional theory (DFT) calculations. Applying this process to the C2DB database, we identify and classify 358 2D materials according to SS type at the valence and/or conduction bands. The Bayesian optimization captures trends that are used for the rationalized design of 2D materials with the ideal conditions of band gap and SS for potential spintronics applications. Our workflow can be applied to any other material property. Measurement(s) | Spin polarized and spin-orbit coupling band structures • Spin-splitting type at the valence and/or conduction bands | | Technology Type(s) | Density functional theory • Bayesian optimization and High-throughput calculations | | | | | Factor Type(s) | Atomic composition and stoichiometry of two-dimensional compounds • Crystalline structure of two-dimensional compounds |
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Affiliation(s)
- Gabriel M Nascimento
- Center for Natural and Human Sciences, Federal University of ABC, Santo Andre, SP, Brazil
| | - Elton Ogoshi
- Center for Natural and Human Sciences, Federal University of ABC, Santo Andre, SP, Brazil
| | - Adalberto Fazzio
- Center for Natural and Human Sciences, Federal University of ABC, Santo Andre, SP, Brazil.,Brazilian Nanotechnology National Laboratory (LNNano), CNPEM, 13083-970, Campinas, São Paulo, Brazil
| | - Carlos Mera Acosta
- Center for Natural and Human Sciences, Federal University of ABC, Santo Andre, SP, Brazil.
| | - Gustavo M Dalpian
- Center for Natural and Human Sciences, Federal University of ABC, Santo Andre, SP, Brazil.
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Ke C, Huang J, Liu S. Two-dimensional ferroelectric metal for electrocatalysis. MATERIALS HORIZONS 2021; 8:3387-3393. [PMID: 34672306 DOI: 10.1039/d1mh01556g] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
The coexistence of metallicity and ferroelectricity has been an intriguing and controversial phenomenon as these two material properties are considered incompatible in bulk. We clarify the concept of the ferroelectric metal by revisiting the original definitions for ferroelectric and metal. Two-dimensional (2D) ferroelectrics with out-of-plane polarization can be engineered via layer stacking to a genuine ferroelectric metal characterized by switchable polarization and non-zero density of states at the Fermi level. We demonstrate that 2D ferroelectric metals can serve as electrically-tunable, high-quality electrocatalysts.
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Affiliation(s)
- Changming Ke
- School of Science, Westlake University, Hangzhou, Zhejiang 310024, China.
- Institute of Natural Sciences, Westlake Institute for Advanced Study, Hangzhou, Zhejiang 310024, China
- Key Laboratory for Quantum Materials of Zhejiang Province, Hangzhou, Zhejiang 310024, China
| | - Jiawei Huang
- School of Science, Westlake University, Hangzhou, Zhejiang 310024, China.
- Zhejiang University, Hangzhou, Zhejiang 310058, China
| | - Shi Liu
- School of Science, Westlake University, Hangzhou, Zhejiang 310024, China.
- Institute of Natural Sciences, Westlake Institute for Advanced Study, Hangzhou, Zhejiang 310024, China
- Key Laboratory for Quantum Materials of Zhejiang Province, Hangzhou, Zhejiang 310024, China
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Markov M, Alaerts L, Miranda HPC, Petretto G, Chen W, George J, Bousquet E, Ghosez P, Rignanese GM, Hautier G. Ferroelectricity and multiferroicity in anti-Ruddlesden-Popper structures. Proc Natl Acad Sci U S A 2021; 118:e2026020118. [PMID: 33893238 PMCID: PMC8092399 DOI: 10.1073/pnas.2026020118] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/18/2022] Open
Abstract
Combining ferroelectricity with other properties such as visible light absorption or long-range magnetic order requires the discovery of new families of ferroelectric materials. Here, through the analysis of a high-throughput database of phonon band structures, we identify a structural family of anti-Ruddlesden-Popper phases [Formula: see text]O (A=Ca, Sr, Ba, Eu, X=Sb, P, As, Bi) showing ferroelectric and antiferroelectric behaviors. The discovered ferroelectrics belong to the new class of hyperferroelectrics that polarize even under open-circuit boundary conditions. The polar distortion involves the movement of O anions against apical A cations and is driven by geometric effects resulting from internal chemical strains. Within this structural family, we show that [Formula: see text]O combines coupled ferromagnetic and ferroelectric order at the same atomic site, a very rare occurrence in materials physics.
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Affiliation(s)
- Maxime Markov
- Institute of Condensed Matter and Nanosciences, Université Catholique de Louvain, B-1348 Louvain-la-Neuve, Belgium
| | - Louis Alaerts
- Institute of Condensed Matter and Nanosciences, Université Catholique de Louvain, B-1348 Louvain-la-Neuve, Belgium
- Thayer School of Engineering, Dartmouth College, Hanover, NH 03755
| | | | - Guido Petretto
- Institute of Condensed Matter and Nanosciences, Université Catholique de Louvain, B-1348 Louvain-la-Neuve, Belgium
| | - Wei Chen
- Institute of Condensed Matter and Nanosciences, Université Catholique de Louvain, B-1348 Louvain-la-Neuve, Belgium
| | - Janine George
- Institute of Condensed Matter and Nanosciences, Université Catholique de Louvain, B-1348 Louvain-la-Neuve, Belgium
| | - Eric Bousquet
- Theoretical Materials Physics, Quantum Materials Center (Q-MAT), Complex and Entangled Systems from Atoms to Materials (CESAM), Université de Liège, B-4000 Liège, Belgium
| | - Philippe Ghosez
- Theoretical Materials Physics, Quantum Materials Center (Q-MAT), Complex and Entangled Systems from Atoms to Materials (CESAM), Université de Liège, B-4000 Liège, Belgium
| | - Gian-Marco Rignanese
- Institute of Condensed Matter and Nanosciences, Université Catholique de Louvain, B-1348 Louvain-la-Neuve, Belgium
| | - Geoffroy Hautier
- Institute of Condensed Matter and Nanosciences, Université Catholique de Louvain, B-1348 Louvain-la-Neuve, Belgium;
- Thayer School of Engineering, Dartmouth College, Hanover, NH 03755
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Xie N, Zhang J, Raza S, Zhang N, Chen X, Wang D. Generation of low-symmetry perovskite structures for ab initiocomputation. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2020; 32:315901. [PMID: 32163934 DOI: 10.1088/1361-648x/ab7f6a] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/04/2019] [Accepted: 03/12/2020] [Indexed: 06/10/2023]
Abstract
Ion displacements are the fundamental cause of ferroelectricity in perovskites. By properly shifting ions,ab initiocomputations have been extensively used to investigate the properties of perovskites in various structural phases. In addition to the relatively simple ion displacements, perovskites have another type of structural distortion known as antiferrodistortion or oxygen octahedron tilting. The interplay between these two types of distortions have generated abundant structural phases that can be tedious to prepare forab initiocomputation, especially for large supercells. Here, we design and implement a computer program to facilitate the generation of distorted perovskite structures, which can be readily used forab initiocomputation to gain further insight into the perovskite of a given structural phase.
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Affiliation(s)
- N Xie
- School of Microelectronics & State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an 710049, People's Republic of China
| | - J Zhang
- School of Microelectronics & State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an 710049, People's Republic of China
| | - S Raza
- School of Energy and Environment, City University of Hong Kong, Kowloon 999077, Hong Kong Special Administrative Region, People's Republic of China
| | - N Zhang
- Electronic Materials Research Laboratory-Key Laboratory of the Ministry of Education & International Center for Dielectric Research, Xi'an Jiaotong University, Xi'an 710049, People's Republic of China
| | - X Chen
- Department of Applied Physics, Aalto University, Espoo 00076, Finland
- BroadBit Batteries Oy, Espoo 02150, Finland
| | - D Wang
- School of Microelectronics & State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an 710049, People's Republic of China
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Smidt TE, Mack SA, Reyes-Lillo SE, Jain A, Neaton JB. An automatically curated first-principles database of ferroelectrics. Sci Data 2020; 7:72. [PMID: 32127531 PMCID: PMC7054578 DOI: 10.1038/s41597-020-0407-9] [Citation(s) in RCA: 14] [Impact Index Per Article: 3.5] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/10/2018] [Accepted: 01/21/2020] [Indexed: 11/09/2022] Open
Abstract
Ferroelectric materials have technological applications in information storage and electronic devices. The ferroelectric polar phase can be controlled with external fields, chemical substitution and size-effects in bulk and ultrathin film form, providing a platform for future technologies and for exploratory research. In this work, we integrate spin-polarized density functional theory (DFT) calculations, crystal structure databases, symmetry tools, workflow software, and a custom analysis toolkit to build a library of known, previously-proposed, and newly-proposed ferroelectric materials. With our automated workflow, we screen over 67,000 candidate materials from the Materials Project database to generate a dataset of 255 ferroelectric candidates, and propose 126 new ferroelectric materials. We benchmark our results against experimental data and previous first-principles results. The data provided includes atomic structures, output files, and DFT values of band gaps, energies, and the spontaneous polarization for each ferroelectric candidate. We contribute our workflow and analysis code to the open-source python packages atomate and pymatgen so others can conduct analogous symmetry driven searches for ferroelectrics and related phenomena.
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Affiliation(s)
- Tess E Smidt
- Department of Physics, University of California, Berkeley, California, 94720, United States
- Molecular Foundry, Lawrence Berkeley National Laboratory, Berkeley, California, 94720, United States
| | - Stephanie A Mack
- Department of Physics, University of California, Berkeley, California, 94720, United States
- Molecular Foundry, Lawrence Berkeley National Laboratory, Berkeley, California, 94720, United States
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California, 94720, United States
| | - Sebastian E Reyes-Lillo
- Department of Physics, University of California, Berkeley, California, 94720, United States
- Molecular Foundry, Lawrence Berkeley National Laboratory, Berkeley, California, 94720, United States
- Departamento de Ciencias Físicas, Universidad Andres Bello, Santiago, 837-0136, Chile
| | - Anubhav Jain
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California, 94720, United States
| | - Jeffrey B Neaton
- Department of Physics, University of California, Berkeley, California, 94720, United States.
- Molecular Foundry, Lawrence Berkeley National Laboratory, Berkeley, California, 94720, United States.
- Kavli Energy Nanosciences Institute at Berkeley, Berkeley, California, 94720, United States.
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Bennett JW. Surveying polar materials in the Inorganic Crystal Structure Database to identify emerging structure types. J SOLID STATE CHEM 2020. [DOI: 10.1016/j.jssc.2019.121045] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/25/2022]
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