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Ma CG, Xiao JL, Xiao ZX, Yang YD, Huang YZ. Chaotic microlasers caused by internal mode interaction for random number generation. LIGHT, SCIENCE & APPLICATIONS 2022; 11:187. [PMID: 35725840 PMCID: PMC9209477 DOI: 10.1038/s41377-022-00890-w] [Citation(s) in RCA: 12] [Impact Index Per Article: 6.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/04/2022] [Revised: 05/19/2022] [Accepted: 06/11/2022] [Indexed: 05/25/2023]
Abstract
Chaotic semiconductor lasers have been widely investigated for generating unpredictable random numbers, especially for lasers with external optical feedback. Nevertheless, chaotic lasers under external feedback are hindered by external feedback loop time, which causes correlation peaks for chaotic output. Here, we demonstrate the first self-chaotic microlaser based on internal mode interaction for a dual-mode microcavity laser, and realize random number generation using the self-chaotic laser output. By adjusting mode frequency interval close to the intrinsic relaxation oscillation frequency, nonlinear dynamics including self-chaos and period-oscillations are predicted and realized numerically and experimentally due to internal mode interaction. The internal mode interaction and corresponding carrier spatial oscillations pave the way of mode engineering for nonlinear dynamics in a solitary laser. Our findings provide a novel and easy method to create controllable and robust optical chaos for high-speed random number generation.
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Affiliation(s)
- Chun-Guang Ma
- State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
- Center of Material Science and Optoelectronic Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Jin-Long Xiao
- State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
- Center of Material Science and Optoelectronic Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Zhi-Xiong Xiao
- State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
- Center of Material Science and Optoelectronic Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Yue-De Yang
- State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
- Center of Material Science and Optoelectronic Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Yong-Zhen Huang
- State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China.
- Center of Material Science and Optoelectronic Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China.
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Wu JG, Zhao LJ, Wu ZM, Lu D, Tang X, Zhong ZQ, Xia GQ. Direct generation of broadband chaos by a monolithic integrated semiconductor laser chip. OPTICS EXPRESS 2013; 21:23358-23364. [PMID: 24104249 DOI: 10.1364/oe.21.023358] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/02/2023]
Abstract
A solitary monolithic integrated semiconductor laser (MISL) chip with a size of 780 micrometer is designed and fabricated for broadband chaos generation. Such a MISL chip consists of a DFB section, a phase section and an amplification section. Test results indicate that under suitable operation conditions, this laser chip can be driven into broadband chaos. The generated chaos covers an RF frequency range, limited by our measurement device, of 26.5GHz, and possesses significant dimension and complexity. Moreover, the routes into and out of chaos are also characterized through extracting variety dynamical states of temporal waveforms, phase portraits, RF spectra and statistical indicators.
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Schikora S, Wünsche HJ, Henneberger F. Odd-number theorem: optical feedback control at a subcritical Hopf bifurcation in a semiconductor laser. PHYSICAL REVIEW. E, STATISTICAL, NONLINEAR, AND SOFT MATTER PHYSICS 2011; 83:026203. [PMID: 21405892 DOI: 10.1103/physreve.83.026203] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/08/2010] [Revised: 10/22/2010] [Indexed: 05/30/2023]
Abstract
A subcritical Hopf bifurcation is prepared in a multisection semiconductor laser. In the free-running state, hysteresis is absent due to noise-induced escape processes. The missing branches are recovered by stabilizing them against noise through application of phase-sensitive noninvasive delayed optical feedback control. The same type of control is successfully used to stabilize the unstable pulsations born in the Hopf bifurcation. This experimental finding represents an optical counterexample to the so-called odd-number limitation of delayed feedback control. However, as a leftover of the limitation, the domains of control are extremely small.
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Affiliation(s)
- S Schikora
- Humboldt-Universität zu Berlin, Institut für Physik, Newtonstr. 15, D-12489 Berlin, Germany.
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