Nonlinear screening and ballistic transport in a graphene p-n junction

Ambipolar charge-transfer graphene plasmonic cavities

Plasmon polaritons in van der Waals materials hold promise for various photonics applications^1-4. The deterministic imprinting of spatial patterns of high carrier density in plasmonic cavities and nanoscale circuitry can enable the realization of advanced nonlinear nanophotonic⁵ and strong light-matter interaction platforms⁶. Here we demonstrate an oxidation-activated charge transfer strategy to program ambipolar low-loss graphene plasmonic structures. By covering graphene with transition-metal dichalcogenides and subsequently oxidizing the transition-metal dichalcogenides into transition-metal oxides, we activate charge transfer rooted in the dissimilar work functions between transition-metal oxides and graphene. Nano-infrared imaging reveals ambipolar low-loss plasmon polaritons at the transition-metal-oxide/graphene interfaces. Further, by inserting dielectric van der Waals spacers, we can precisely control the electron and hole densities induced by oxidation-activated charge transfer and achieve plasmons with a near-intrinsic quality factor. Using this strategy, we imprint plasmonic cavities with laterally abrupt doping profiles with nanoscale precision and demonstrate plasmonic whispering-gallery resonators based on suspended graphene encapsulated in transition-metal oxides.

Imaging the breaking of electrostatic dams in graphene for ballistic and viscous fluids

The charge carriers in a material can, under special circumstances, behave as a viscous fluid. In this work, we investigated such behavior by using scanning tunneling potentiometry to probe the nanometer-scale flow of electron fluids in graphene as they pass through channels defined by smooth and tunable in-plane p-n junction barriers. We observed that as the sample temperature and channel widths are increased, the electron fluid flow undergoes a Knudsen-to-Gurzhi transition from the ballistic to the viscous regime characterized by a channel conductance that exceeds the ballistic limit, as well as suppressed charge accumulation against the barriers. Our results are well modeled by finite element simulations of two-dimensional viscous current flow, and they illustrate how Fermi liquid flow evolves with carrier density, channel width, and temperature.

Gate-tunable Veselago interference in a bipolar graphene microcavity

The relativistic charge carriers in monolayer graphene can be manipulated in manners akin to conventional optics. Klein tunneling and Veselago lensing have been previously demonstrated in ballistic graphene pn-junction devices, but collimation and focusing efficiency remains relatively low, preventing realization of advanced quantum devices and controlled quantum interference. Here, we present a graphene microcavity defined by carefully-engineered local strain and electrostatic fields. Electrons are manipulated to form an interference path inside the cavity at zero magnetic field via consecutive Veselago refractions. The observation of unique Veselago interference peaks via transport measurement and their magnetic field dependence agrees with the theoretical expectation. We further utilize Veselago interference to demonstrate localization of uncollimated electrons and thus improvement in collimation efficiency. Our work sheds new light on relativistic single-particle physics and provide a new device concept toward next-generation quantum devices based on manipulation of ballistic electron trajectory.

Ultrasharp Lateral p-n Junctions in Modulation-Doped Graphene

We demonstrate ultrasharp (≲10 nm) lateral p-n junctions in graphene using electronic transport, scanning tunneling microscopy, and first-principles calculations. The p-n junction lies at the boundary between differentially doped regions of a graphene sheet, where one side is intrinsic and the other is charge-doped by proximity to a flake of α-RuCl₃ across a thin insulating barrier. We extract the p-n junction contribution to the device resistance to place bounds on the junction width. We achieve an ultrasharp junction when the boundary between the intrinsic and doped regions is defined by a cleaved crystalline edge of α-RuCl₃ located 2 nm from the graphene. Scanning tunneling spectroscopy in heterostructures of graphene, hexagonal boron nitride, and α-RuCl₃ shows potential variations on a sub 10 nm length scale. First-principles calculations reveal that the charge-doping of graphene decays sharply over just nanometers from the edge of the α-RuCl₃ flake.

Gate potential-controlled current switching in graphene Y-junctions

In this work we investigate the ballistic transport of electrons through three-terminal graphene-based devices. The system consists of a Y-shaped junction formed by three armchair-edged graphene nanoribbons with a rectangular gate potential applied to one of the output branches, whereby current control can be established by the controlling of the refractive index in graphene p-n junctions. Transport properties are obtained by using the Landauer-Büttiker formalism and the tight-binding model within the nearest-neighbor approximation, which allows the calculation of the conductance as function of the Fermi energy, the applied potential, and the system size, as well as the current density. The results demonstrate that the applied electric field can tune the current transmission between the input and two output leads and, consequently, the proposed system acts as a current switch.

Electrostatics of metal-graphene interfaces: sharp p-n junctions for electron-optical applications

Creation of sharp lateral p-n junctions in graphene devices, with transition widths w well below the Fermi wavelength λF of graphene's charge carriers, is vital to study and exploit these electronic systems for electron-optical applications. The achievement of such junctions is, however, not trivial due to the presence of a considerable out-of-plane electric field in lateral p-n junctions, resulting in large widths. Metal-graphene interfaces represent a novel, promising and easy to implement technique to engineer such sharp lateral p-n junctions in graphene field-effect devices, in clear contrast to the much wider (i.e. smooth) junctions achieved via conventional local gating. In this work, we present a systematic and robust investigation of the electrostatic problem of metal-induced lateral p-n junctions in gated graphene devices for electron-optics applications, systems where the width w of the created junctions is not only determined by the metal used but also depends on external factors such as device geometries, dielectric environment and different operational parameters such as carrier density and temperature. Our calculations demonstrate that sharp junctions (w ≪ λF) can be achieved via metal-graphene interfaces at room temperature in devices surrounded by dielectric media with low relative permittivity (<10). In addition, we show how specific details such as the separation distance between metal and graphene and the permittivity of the gap in-between plays a critical role when defining the p-n junction, not only defining its width w but also the energy shift of graphene underneath the metal. These results can be extended to any two-dimensional (2D) electronic system doped by the presence of metal clusters and thus are relevant for understanding interfaces between metals and other 2D materials.

Electrically configurable graphene field-effect transistors with a graded-potential gate

A device architecture for electrically configurable graphene field-effect transistor (GFET) using a graded-potential gate is present. The gating scheme enables a linearly varying electric field that modulates the electronic structure of graphene and causes a continuous shift of the Dirac points along the channel of GFET. This spatially varying electrostatic modulation produces a pseudobandgap observed as a suppressed conductance of graphene within a controllable energy range. By tuning the electrical gradient of the gate, a GFET device is reversibly transformed between ambipolar and n- and p-type unipolar characteristics. We further demonstrate an electrically programmable complementary inverter, showing the extensibility of the proposed architecture in constructing logic devices based on graphene and other Dirac materials. The electrical configurable GFET might be explored for novel functionalities in smart electronics.

Ballistic bipolar junctions in chemically gated graphene ribbons

The realization of ballistic graphene pn-junctions is an essential task in order to study Klein tunneling phenomena. Here we show that intercalation of Ge under the buffer layer of pre-structured SiC-samples succeeds to make truly nano-scaled pn-junctions. By means of local tunneling spectroscopy the junction width is found to be as narrow as 5 nm which is a hundred times smaller compared to electrically gated structures. The ballistic transmission across the junction is directly proven by systematic transport measurements with a 4-tip STM. Various npn- and pnp-junctions are studied with respect to the barrier length. The pn-junctions are shown to act as polarizer and analyzer with the second junction becoming transparent in case of a fully ballistic barrier. This can be attributed to the almost full suppression of electron transmission through the junction away from normal incidence.

Conductance oscillations induced by ballistic snake states in a graphene heterojunction

The realization of p-n junctions in graphene, combined with the gapless and chiral nature of its massless Dirac fermions has led to the observation of many intriguing phenomena such as the quantum Hall effect in the bipolar regime, Klein tunnelling and Fabry-Pérot interferences, all of which involve electronic transport across p-n junctions. Ballistic snake states propagating along the p-n junctions have been predicted to induce conductance oscillations, manifesting their twisting nature. However, transport studies along p-n junctions have so far only been performed in low mobility devices. Here, we report the observation of conductance oscillations due to ballistic snake states along a p-n interface in high-quality graphene encapsulated by hexagonal boron nitride. These snake states are exceptionally robust as they can propagate over 12 μm, limited only by the size of our sample, and survive up to at least 120 K. The ability to guide carriers over a long distance provide a crucial building block for graphene-based electron optics.

Multi switching behavior of hydrogen passivated silicene as molecular junction: A DFT-NEGF approach

Electron transport properties of pristine silicon-substituted analogue of pyrene, Si 16 H 8, and its carbon-doped analogue, Si 14 C 2 H 8, between two semi-infinite aluminum nanochain electrodes were investigated by means of density functional theory plus nonequilibrium green's function method. Here, the current-bias (I–Vb) characteristics were studied in the bias potential range of 0.0 up to 2.0 V in 0.1 V steps by imposing three gate voltages including -3.0, 0.0 and +3.0 V. The considerable result of the present study was the observation of multiple negative differential resistance (NDR) regions, suggesting that the studied systems could be used as nano-multi-switch. The I–Vb behavior of the studied systems along with the observation of the NDR's in each considered gate voltage was interpreted by means of transmission spectrum. These interpretations were carried on by the integration of the transmission spectrum in the corresponding bias window. The observed NDR characteristics including the bias range and current amplitude could be changed by the variations in the applied gate voltage. Controlling NDR characteristics of these devices using the variations of the gate voltage is a major advantage for practical purposes.

Many-body renormalization of the minimal conductivity in graphene

The conductance of ballistic graphene at the neutrality point is due to coherent electron tunneling between the leads, the so called pseudodiffusive regime. The conductance scales as a function of the sample dimensions in the same way as in a diffusive metal, despite the difference in the physical mechanisms involved. The electron-electron interaction modifies this regime, and plays a role similar to that of the environment in macroscopic quantum phenomena. We show that interactions can change substantially the transport properties. In the presence of nearby metallic layers, the conductance near the neutrality point can decrease with decreasing temperature, and reach values well below the quantum unit of conductance, as in an insulator.

A model for ballistic transport across locally gated graphene bipolar junctions

An alternative model of Gaussian-type potential is suggested, which allows us to describe the transport properties of the locally gated graphene bipolar junctions in all possible charge density regimes, including a smooth transition between the regimes. Using this model we systematically study the transmission probability, the resistances, the current-voltage characteristics, and the shot noise for ballistic graphene bipolar junctions of different top gate lengths under largely varying gate voltages. Obtained results on the one hand show multifarious manifestations of the Klein tunneling and the interference effects, and on the other hand describe well typical experimental data on the junction resistances.

Homo- and hetero- p-n junctions formed on graphene steps

p-n junction is a fundamental building block in modern electronic circuits. We report graphene p-n junctions formed by a one-step thickness-dependent surface treatment of mono-/bilayer graphene steps. The junction electronic properties are systemically studied by means of Kelvin probe force microscopy (KPFM) and transport measurements. Because of the dissimilar modifications to graphene electronic properties, the junctions behave distinctly, i.e., two-component resistance-like for organic charge transfer doping and Shottky-junction-like for covalent doping. By exploring the spatially potential distribution, we clarify the potential profiles as well as the transport attributes across the graphene p-n junction interface under lateral bias and electrical gating. Our results not only unveil the detailed properties of graphene p-n junction interface, but also gain an insight into its practical applications in nanoelectronics.

Lead-position dependent regular oscillations and random fluctuations of conductance in graphene quantum dots

Quantum interference causes a wavefunction to have sensitive spatial dependence, and this has a significant effect on quantum transport. For example, in a quantum-dot system, the conductance can depend on the lead positions. We investigate, for graphene quantum dots, the conductance variations with the lead positions. Since for graphene the types of boundaries, e.g., zigzag and armchair, can fundamentally affect the quantum transport characteristics, we focus on rectangular graphene quantum dots, for which the effects of boundaries can be systematically studied. For both zigzag and armchair horizontal boundaries, we find that changing the positions of the leads can induce significant conductance variations. Depending on the Fermi energy, the variations can be either regular oscillations or random conductance fluctuations. We develop a physical theory to elucidate the origin of the conductance oscillation/fluctuation patterns. In particular, quantum interference leads to standing-wave-like-patterns in the quantum dot which, in the absence of leads, are regulated by the energy-band structure of the corresponding vertical graphene ribbon. The observed 'coexistence' of regular oscillations and random fluctuations in the conductance can be exploited for the development of graphene-based nanodevices.

Angle-dependent carrier transmission in graphene p-n junctions

Angle-dependent carrier transmission probability in graphene p-n junctions is investigated. Using electrostatic doping from buried gates, p-n junctions are formed along graphene channels that are patterned to form different angles with the junction. A peak in the junction resistance is observed, which becomes pronounced with angle. This angular dependence is observed for junctions made on both exfoliated and CVD-grown graphene and is consistent with the theoretically predicted dependence of transmission probability on incidence angle.

1D graphene-like silicon systems: silicene nano-ribbons

Through this review we can follow the various phases that have led to the discovery of the new allotrope form of silicon: silicene. This is a one-atom thick silicon sheet arranged in a honeycomb lattice, similar to graphene. For silicon, which usually is sp3 hybridized, it represents an unusual and rare structure. First, silicene was theoretically hypothesized and subsequently its structure calculated as a possible candidate for nano-ribbons of Si grown on the anisotropic Ag(110) surface. It was only later, when the physical and chemical properties of this peculiar form of silicon, demonstrating the presence of π and π* bands giving the so-called Dirac cones at the K corners of the Brillouin zone, the sp2-like nature of the valence orbitals of the Si-Si bonds and its strong resistance towards oxygen were reported, that the real existence of silicene became recognized in the scientific community. This review is essentially focused on the experimental work performed on 1D isolated silicene nano-ribbons and their 1D dense array grown on Ag(110) surfaces.

Quantum behavior of graphene transistors near the scaling limit

The superior intrinsic properties of graphene have been a key research focus for the past few years. However, external components, such as metallic contacts, serve not only as essential probing elements, but also give rise to an effective electron cavity, which can form the basis for new quantum devices. In previous studies, quantum interference effects were demonstrated in graphene heterojunctions formed by a top gate. Here phase coherent transport behavior is demonstrated in a simple two terminal graphene structure with clearly resolved Fabry-Perot oscillations in sub-100 nm devices. By aggressively scaling the channel length down to 50 nm, we study the evolution of the graphene transistor from the channel-dominated diffusive regime to the contact-dominated ballistic regime. Key issues such as the current asymmetry, the question of Fermi level pinning by the contacts, the graphene screening determining the heterojunction barrier width, the scaling of minimum conductivity, and of the on/off current ratio are investigated.

Graphene nanomesh-based devices exhibiting a strong negative differential conductance effect

Using atomistic quantum simulation based on a tight binding model, we have investigated the transport characteristics of graphene nanomesh-based devices and evaluated the possibilities of observing negative differential conductance. It is shown that by taking advantage of bandgap opening in the graphene nanomesh lattice, a strong negative differential conductance effect can be achieved at room temperature in pn junctions and n-doped structures. Remarkably, the effect is improved very significantly (with a peak-to-valley current ratio of a few hundred) and appears to be weakly sensitive to the transition length in graphene nanomesh pn hetero-junctions when inserting a pristine (gapless) graphene section in the transition region between n and p zones. The study therefore suggests new design strategies for graphene electronic devices which may offer strong advantages in terms of performance and processing over the devices studied previously.

Ballistic transport of graphene pnp junctions with embedded local gates

We fabricated graphene pnp devices, by embedding pre-defined local gates in an oxidized surface layer of a silicon substrate. With neither deposition of dielectric material on the graphene nor electron-beam irradiation, we obtained high-quality graphene pnp devices without degradation of the carrier mobility even in the local-gate region. The corresponding increased mean free path leads to the observation of ballistic and phase-coherent transport across a local gate 130 nm wide, which is about an order of magnitude wider than reported previously. Furthermore, in our scheme, we demonstrated independent control of the carrier density in the local-gate region, with a conductance map very much distinct from those of top-gated devices. This was caused by the electric field arising from the global back gate being strongly screened by the embedded local gate. Our scheme allows the realization of ideal multipolar graphene junctions with ballistic carrier transport.

Gate-activated photoresponse in a graphene p-n junction

We study photodetection in graphene near a local electrostatic gate, which enables active control of the potential landscape and carrier polarity. We find that a strong photoresponse only appears when and where a p-n junction is formed, allowing on-off control of photodetection. Photocurrents generated near p-n junctions do not require biasing and can be realized using submicrometer gates. Locally modulated photoresponse enables a new range of applications for graphene-based photodetectors including, for example, pixilated infrared imaging with control of response on subwavelength dimensions.

Nanoelectronics: Making light of electrons

Electrons have been channelled through graphene wires using the principles of optical guiding by fibre optic cables.

Gate-controlled guiding of electrons in graphene

Ballistic semiconductor structures have allowed the realization of optics-like phenomena in electronic systems, including the magnetic focusing and electrostatic lensing of electrons. An extension that appears unique to graphene is to use both n and p carrier types to create electronic analogues of optical devices with both positive and negative indices of refraction. Here, we use the gate-controlled density of both p and n carrier types in graphene to demonstrate the electronic analogue of fibre-optic guiding. Two basic effects are investigated: bipolar p-n junction guiding, based on the principle of angle-selective transmission through the interface between the graphene and the p-n junction; and unipolar fibre-optic guiding, using total internal reflection controlled by carrier density. We also demonstrate modulation of the guiding efficiency through gating, and comparison of these data with numerical simulations indicates that guiding performance is limited by the roughness of the interface. The development of p-n and fibre-optic guiding in graphene may lead to electrically reconfigurable wiring in high-mobility devices.

Collapse of Landau levels in gated graphene structures

We describe a new regime of magnetotransport in two-dimensional electron systems in the presence of a narrow potential barrier. In such systems, the Landau level states, which are confined to the barrier region in strong magnetic fields, undergo a deconfinement transition as the field is lowered. Transport measurements on a top-gated graphene device are presented. Shubnikov-de Haas (SdH) oscillations, observed in the unipolar regime, are found to abruptly disappear when the strength of the magnetic field is reduced below a certain critical value. This behavior is explained by a semiclassical analysis of the transformation of closed cyclotron orbits into open, deconfined trajectories.

Nanophysics in graphene: neutrino physics in quantum rings and superlattices

Electrons in graphene at low energy obey a two-dimensional Dirac equation, closely analogous to that of neutrinos. As a result, quantum mechanical effects when the system is confined or subjected to potentials at the nanoscale may be quite different from what happens in conventional electronic systems. In this article, we review recent progress on two systems where this is indeed the case: quantum rings and graphene electrons in a superlattice potential. In the former case, we demonstrate that the spectrum reveals signatures of 'effective time-reversal symmetry breaking', in which the spectra are most naturally interpreted in terms of effective magnetic flux contained in the ring, even when no real flux is present. A one-dimensional superlattice potential is shown to induce strong band-structure changes, allowing the number of Dirac points at zero energy to be manipulated by the strength and/or period of the potential. The emergence of new Dirac points is shown to be accompanied by strong signatures in the conduction properties of the system.

Effect of top dielectric medium on gate capacitance of graphene field effect transistors: implications in mobility measurements and sensor applications

We have carried out Hall measurement on back-gated graphene field effect transistors (FET) with and without a top dielectric medium. The gate efficiency increases by up to 2 orders of magnitude in the presence of a high κ top dielectric medium, but the mobility does not change significantly. Our measurement further shows that the back-gate capacitance is enhanced dramatically by the top dielectric medium, and the enhancement increases with the size of the top dielectric medium. Our work strongly suggests that the previously reported top dielectric medium-induced charge transport properties of graphene FETs are possibly due to the increase of gate capacitance, rather than enhancement of carrier mobility.

Effective magnetic fields in graphene superlattices

We demonstrate that the electronic spectrum of graphene in a one-dimensional periodic potential will develop a Landau level spectrum when the potential magnitude varies slowly in space. The effect is related to extra Dirac points generated by the potential whose positions are sensitive to its magnitude. We exploit a chiral symmetry in the Dirac Hamiltonian description with a superlattice potential to show that the low energy theory contains an effective magnetic field. Numerical diagonalization of the Dirac equation confirms the presence of Landau levels. Possible consequences for transport are discussed.

Graphene-based electronic spin lenses

We theoretically demonstrate the capability of a ferromagnetic-normal interface in graphene to focus an electron wave with a certain spin direction. The essential feature is the negative refraction Klein tunneling, which is spin resolved when the exchange energy of ferromagnetic graphene exceeds its Fermi energy. Exploiting this property, we propose a graphene normal-ferromagnetic-normal electronic spin lens through which an unpolarized electronic beam can be collimated with a finite spin polarization. Our study reveals that magnetic graphene has the potential to be the electronic counterpart of the recently discovered photonic chiral metamaterials that exhibit a negative refractive index for only one direction of the circular polarization of the photon wave.

Electronic properties of a biased graphene bilayer

We study, within the tight-binding approximation, the electronic properties of a graphene bilayer in the presence of an external electric field applied perpendicular to the system-a biased bilayer. The effect of the perpendicular electric field is included through a parallel plate capacitor model, with screening correction at the Hartree level. The full tight-binding description is compared with its four-band and two-band continuum approximations, and the four-band model is shown to always be a suitable approximation for the conditions realized in experiments. The model is applied to real biased bilayer devices, made out of either SiC or exfoliated graphene, and good agreement with experimental results is found, indicating that the model is capturing the key ingredients, and that a finite gap is effectively being controlled externally. Analysis of experimental results regarding the electrical noise and cyclotron resonance further suggests that the model can be seen as a good starting point for understanding the electronic properties of graphene bilayer. Also, we study the effect of electron-hole asymmetry terms, such as the second-nearest-neighbour hopping energies t' (in-plane) and γ(4) (inter-layer), and the on-site energy Δ.

Guided plasmons in graphene p-n junctions

Spatial separation of electrons and holes in graphene gives rise to the existence of plasmon waves confined to the boundary region. A theory of such guided plasmon modes within hydrodynamics of electron-hole liquid is developed. For plasmon wavelengths smaller than the size of charged domains, plasmon dispersion is found to be omega proportional to q(1/4). The frequency, velocity, and direction of propagation of guided plasmon modes can be easily controlled by the external electric field. In the presence of a magnetic field, a spectrum of additional gapless magnetoplasmon excitations is obtained. Our findings indicate that graphene is a promising material for nanoplasmonics.

Neutrality point of graphene with coplanar charged impurities

The ground state and the transport properties of graphene subject to the potential of in-plane charged impurities are studied. The screening of the impurity potential is shown to be nonlinear, producing a fractal structure of electron and hole puddles. Statistical properties of this density distribution as well as the charge compressibility of the system are calculated in the leading-log approximation. The conductivity depends logarithmically on alpha, the dimensionless strength of the Coulomb interaction. The theory is asymptotically exact when alpha is small, which is the case for graphene on a substrate with a high dielectric constant.

Spin polarized conductance in hybrid graphene nanoribbons using 5-7 defects

We present a class of intramolecular graphene heterojunctions and use first-principles density functional calculations to describe their electronic, magnetic, and transport properties. The hybrid graphene and hybrid graphene nanoribbons have both armchair and zigzag features that are separated by an interface made up of pentagonal and heptagonal carbon rings. Contrary to conventional graphene sheets, the computed electronic density of states indicates that all hybrid graphene and nanoribbon systems are metallic. Hybrid nanoribbons are found to exhibit a remarkable width-dependent magnetic behavior and behave as spin polarized conductors.

Transmission and scarring in graphene quantum dots

We study electronic transport in quantum-dot structures made of graphene. Focusing on the rectangular dot geometry and utilizing the non-equilibrium Green's function to calculate the transmission in the tight-binding framework, we find significant fluctuations in the transmission as a function of the electron energy. The fluctuations are correlated with the formation of quantum scarring states, or pointer states in the dot. Both enhancement and suppression of transmission have been observed. As the size of the quantum dot is increased, more scarring states can be formed, leading to stronger transmission or conductance fluctuations.

Evidence for Klein tunneling in graphene p-n junctions

Transport through potential barriers in graphene is investigated using a set of metallic gates capacitively coupled to graphene to modulate the potential landscape. When a gate-induced potential step is steep enough, disorder becomes less important and the resistance across the step is in quantitative agreement with predictions of Klein tunneling of Dirac fermions up to a small correction. We also perform magnetoresistance measurements at low magnetic fields and compare them to recent predictions.

Klein backscattering and Fabry-Pérot interference in graphene heterojunctions

We present a theory of quantum-coherent transport through a lateral p-n-p structure in graphene, which fully accounts for the interference of forward and backward scattering on the p-n interfaces. The backreflection amplitude changes sign at zero incidence angle because of the Klein phenomenon, adding a phase pi to the interference fringes. The contributions of the two p-n interfaces to the phase of the interference cancel with each other at zero magnetic field, but become imbalanced at a finite field. The resulting half-period shift in the Fabry-Pérot fringe pattern, induced by a relatively weak magnetic field, can provide a clear signature of Klein scattering in graphene. This effect is shown to be robust in the presence of spatially inhomogeneous potential of moderate strength.

Conductance of p-n-p graphene structures with "air-bridge" top gates

We have fabricated graphene devices with a top gate separated from the graphene layer by an air gap-a design which does not decrease the mobility of charge carriers under the gate. This gate is used to realize p-n-p structures where the conducting properties of chiral carriers are studied. The band profile of the structures is calculated taking into account the specifics of the graphene density of states and is used to find the resistance of the p-n junctions expected for chiral carriers. We show that ballistic p-n junctions have larger resistance than diffusive ones. This is caused by suppressed transmission of chiral carriers at angles away from the normal to the junction.