Isotope engineering for spin defects in van der Waals materials

Spin defects in van der Waals materials offer a promising platform for advancing quantum technologies. Here, we propose and demonstrate a powerful technique based on isotope engineering of host materials to significantly enhance the coherence properties of embedded spin defects. Focusing on the recently-discovered negatively charged boron vacancy center ([Formula: see text]) in hexagonal boron nitride (hBN), we grow isotopically purified h10B15N crystals. Compared to [Formula: see text] in hBN with the natural distribution of isotopes, we observe substantially narrower and less crowded [Formula: see text] spin transitions as well as extended coherence time T2 and relaxation time T1. For quantum sensing, [Formula: see text] centers in our h10B15N samples exhibit a factor of 4 (2) enhancement in DC (AC) magnetic field sensitivity. For additional quantum resources, the individual addressability of the [Formula: see text] hyperfine levels enables the dynamical polarization and coherent control of the three nearest-neighbor 15N nuclear spins. Our results demonstrate the power of isotope engineering for enhancing the properties of quantum spin defects in hBN, and can be readily extended to improving spin qubits in a broad family of van der Waals materials.

Direct Visualization of the Charge Transfer in a Graphene/α-RuCl3 Heterostructure via Angle-Resolved Photoemission Spectroscopy

We investigate the electronic properties of a graphene and α-ruthenium trichloride (α-RuCl3) heterostructure using a combination of experimental techniques. α-RuCl3 is a Mott insulator and a Kitaev material. Its combination with graphene has gained increasing attention due to its potential applicability in novel optoelectronic devices. By using a combination of spatially resolved photoemission spectroscopy and low-energy electron microscopy, we are able to provide a direct visualization of the massive charge transfer from graphene to α-RuCl3, which can modify the electronic properties of both materials, leading to novel electronic phenomena at their interface. A measurement of the spatially resolved work function allows for a direct estimate of the interface dipole between graphene and α-RuCl3. Their strong coupling could lead to new ways of manipulating electronic properties of a two-dimensional heterojunction. Understanding the electronic properties of this structure is pivotal for designing next generation low-power optoelectronics devices.

Coherent dynamics of strongly interacting electronic spin defects in hexagonal boron nitride

Optically active spin defects in van der Waals materials are promising platforms for modern quantum technologies. Here we investigate the coherent dynamics of strongly interacting ensembles of negatively charged boron-vacancy ([Formula: see text]) centers in hexagonal boron nitride (hBN) with varying defect density. By employing advanced dynamical decoupling sequences to selectively isolate different dephasing sources, we observe more than 5-fold improvement in the measured coherence times across all hBN samples. Crucially, we identify that the many-body interaction within the [Formula: see text] ensemble plays a substantial role in the coherent dynamics, which is then used to directly estimate the concentration of [Formula: see text]. We find that at high ion implantation dosage, only a small portion of the created boron vacancy defects are in the desired negatively charged state. Finally, we investigate the spin response of [Formula: see text] to the local charged defects induced electric field signals, and estimate its ground state transverse electric field susceptibility. Our results provide new insights on the spin and charge properties of [Formula: see text], which are important for future use of defects in hBN as quantum sensors and simulators.

Design and optimization of thin-film tungsten (W)-diamond target for multi-pixel X-ray sources

BACKGROUND

Emerging multi-pixel X-ray source technology enables new designs for X-ray imaging systems. The power of multi-pixel X-ray sources with a fixed anode is limited by focal spot power density.

PURPOSE

The purpose of this study is to optimize the W-diamond target and predict its performance in multi-pixel X-ray sources.

METHODS

X-ray intensity and energy deposition in the W-diamond target with different thicknesses of tungsten film and incident electron energies was calculated with the Geant4 Monte Carlo toolkit. COMSOL Multiphysics software was used to analyze the transient and stationary heat transfer in the thin-film W-diamond target. The maximum tube power and X-ray output intensity were predicted for both transmission and reflection target configurations.

RESULTS

The maximum focal spot power density was limited by either the graphitization of the diamond substrate or the melting point of the W target. With optimal W-target thickness, the maximum transmission X-ray intensities are about 40%-50% higher than the maximum reflection intensities. Thin-film W-diamond targets allow four to five times more maximum power input and produce six to seven times higher transmission X-ray intensity in continuous mode compared with conventional reflection W thick targets. Depending on the focal spot size, reducing the X-ray pulse duration can further enhance the tube power.

CONCLUSIONS

Multi-pixel X-ray sources using this W-diamond target design can produce significantly higher X-ray output than traditional thick tungsten targets without major modification of the tube design.

Ultrasharp Lateral p-n Junctions in Modulation-Doped Graphene

We demonstrate ultrasharp (≲10 nm) lateral p-n junctions in graphene using electronic transport, scanning tunneling microscopy, and first-principles calculations. The p-n junction lies at the boundary between differentially doped regions of a graphene sheet, where one side is intrinsic and the other is charge-doped by proximity to a flake of α-RuCl₃ across a thin insulating barrier. We extract the p-n junction contribution to the device resistance to place bounds on the junction width. We achieve an ultrasharp junction when the boundary between the intrinsic and doped regions is defined by a cleaved crystalline edge of α-RuCl₃ located 2 nm from the graphene. Scanning tunneling spectroscopy in heterostructures of graphene, hexagonal boron nitride, and α-RuCl₃ shows potential variations on a sub 10 nm length scale. First-principles calculations reveal that the charge-doping of graphene decays sharply over just nanometers from the edge of the α-RuCl₃ flake.

Axion Dark Matter Experiment: Detailed design and operations

Axion dark matter experiment ultra-low noise haloscope technology has enabled the successful completion of two science runs (1A and 1B) that looked for dark matter axions in the 2.66-3.1 μeV mass range with Dine-Fischler-Srednicki-Zhitnisky sensitivity [Du et al., Phys. Rev. Lett. 120, 151301 (2018) and Braine et al., Phys. Rev. Lett. 124, 101303 (2020)]. Therefore, it is the most sensitive axion search experiment to date in this mass range. We discuss the technological advances made in the last several years to achieve this sensitivity, which includes the implementation of components, such as the state-of-the-art quantum-noise-limited amplifiers and a dilution refrigerator. Furthermore, we demonstrate the use of a frequency tunable microstrip superconducting quantum interference device amplifier in run 1A, and a Josephson parametric amplifier in run 1B, along with novel analysis tools that characterize the system noise temperature.

Modulation Doping via a Two-Dimensional Atomic Crystalline Acceptor

Two-dimensional nanoelectronics, plasmonics, and emergent phases require clean and local charge control, calling for layered, crystalline acceptors or donors. Our Raman, photovoltage, and electrical conductance measurements combined with ab initio calculations establish the large work function and narrow bands of α-RuCl₃ enable modulation doping of exfoliated single and bilayer graphene, chemical vapor deposition grown graphene and WSe₂, and molecular beam epitaxy grown EuS. We further demonstrate proof of principle photovoltage devices, control via twist angle, and charge transfer through hexagonal boron nitride. Short-ranged lateral doping (≤65 nm) and high homogeneity are achieved in proximate materials with a single layer of α-RuCl₃. This leads to the best-reported monolayer graphene mobilities (4900 cm²/(V s)) at these high hole densities (3 × 10¹³ cm^-2) and yields larger charge transfer to bilayer graphene (6 × 10¹³ cm^-2).

Extended Search for the Invisible Axion with the Axion Dark Matter Experiment

This Letter reports on a cavity haloscope search for dark matter axions in the Galactic halo in the mass range 2.81-3.31  μeV. This search utilizes the combination of a low-noise Josephson parametric amplifier and a large-cavity haloscope to achieve unprecedented sensitivity across this mass range. This search excludes the full range of axion-photon coupling values predicted in benchmark models of the invisible axion that solve the strong CP problem of quantum chromodynamics.

Electronic transport properties of a lithium-decorated ZrTe5 thin film

Through a combination of single crystal growth, experiments involving in situ deposition of surface adatoms, and complimentary modeling, we examine the electronic transport properties of lithium-decorated ZrTe5 thin films. We observe that the surface states in ZrTe5 are robust against Li adsorption. Both the surface electron density and the associated Berry phase are remarkably robust to adsorption of Li atoms. Fitting to the Hall conductivity data reveals that there exist two types of bulk carriers: those for which the carrier density is insensitive to Li adsorption, and those whose density decreases during initial Li depositions and then saturates with further Li adsorption. We propose this dependence is due to the gating effect of a Li-adsorption-generated dipole layer at the ZrTe5 surface.

Optically Driven Magnetic Phase Transition of Monolayer RuCl3

Strong light-matter interactions within nanoscale structures offer the possibility of optically controlling material properties. Motivated by the recent discovery of intrinsic long-range magnetic order in two-dimensional materials, which allow for the creation of novel magnetic devices of unprecedented small size, we predict that light can couple with magnetism and efficiently tune magnetic orders of monolayer ruthenium trichloride (RuCl₃). First-principles calculations show that both free carriers and optically excited electron-hole pairs can switch monolayer RuCl₃ from a proximate spin-liquid phase to a stable ferromagnetic phase. Specifically, a moderate electron-hole pair density (on the order of 1 × 10¹³ cm^-2) can significantly stabilize the ferromagnetic phase by 10 meV/f.u. in comparison to the competing zigzag phase, so that the predicted ferromagnetism can be driven by optical pumping experiments. Analysis shows that this magnetic phase transition is driven by a combined effect of doping-induced lattice strain and itinerant ferromagnetism. According to Ising-model calculations, we find that the Curie temperature of the ferromagnetic phase can be increased significantly by raising carrier or electron-hole pair density. This enhanced optomagnetic effect opens new opportunities to manipulate two-dimensional magnetism through noncontact, optical approaches.

Many-Particle Effects in the Cyclotron Resonance of Encapsulated Monolayer Graphene

We study the infrared cyclotron resonance of high-mobility monolayer graphene encapsulated in hexagonal boron nitride, and simultaneously observe several narrow resonance lines due to interband Landau-level transitions. By holding the magnetic field strength B constant while tuning the carrier density n, we find the transition energies show a pronounced nonmonotonic dependence on the Landau-level filling factor, ν∝n/B. This constitutes direct evidence that electron-electron interactions contribute to the Landau-level transition energies in graphene, beyond the single-particle picture. Additionally, a splitting occurs in transitions to or from the lowest Landau level, which is interpreted as a Dirac mass arising from coupling of the graphene and boron nitride lattices.

Interaction-induced shift of the cyclotron resonance of graphene using infrared spectroscopy

We report a study of the cyclotron resonance (CR) transitions to and from the unusual n=0 Landau level (LL) in monolayer graphene. Unexpectedly, we find the CR transition energy exhibits large (up to 10%) and nonmonotonic shifts as a function of the LL filling factor, with the energy being largest at half filling of the n=0 level. The magnitude of these shifts, and their magnetic field dependence, suggests that an interaction-enhanced energy gap opens in the n=0 level at high magnetic fields. Such interaction effects normally have a limited impact on the CR due to Kohn's theorem [W. Kohn, Phys. Rev. 123, 1242 (1961)], which does not apply in graphene as a consequence of the underlying linear band structure.

Band structure asymmetry of bilayer graphene revealed by infrared spectroscopy

We report on infrared spectroscopy of bilayer graphene integrated in gated structures. We observe a significant asymmetry in the optical conductivity upon electrostatic doping of electrons and holes. We show that this finding arises from a marked asymmetry between the valence and conduction bands, which is mainly due to the inequivalence of the two sublattices within the graphene layer and the next-nearest-neighbor interlayer coupling. From the conductivity data, the energy difference of the two sublattices and the interlayer coupling energy are directly determined.

Observation of anomalous phonon softening in bilayer graphene

The interaction of electron-hole pairs with lattice vibrations exhibits a wealth of intriguing physical phenomena such as the renowned Kohn anomaly. Here we report the observation in bilayer graphene of an unusual phonon softening that provides the first experimental proof for another type of phonon anomaly. Similar to the Kohn anomaly, which is a logarithmic singularity in the phonon group velocity [W. Kohn, Phys. Rev. Lett. 2, 393 (1959)], the observed phonon anomaly exhibits a logarithmic singularity in the optical-phonon energy. Arising from a resonant electron-phonon coupling effect, the anomaly was also expected, albeit not observed, in monolayer graphene. We propose an explanation for why it is easier to observe in bilayer samples.

Cyclotron resonance in bilayer graphene

We present the first measurements of cyclotron resonance of electrons and holes in bilayer graphene. In magnetic fields up to B=18 T, we observe four distinct intraband transitions in both the conduction and valence bands. The transition energies are roughly linear in B between the lowest Landau levels, whereas they follow square root[B] for the higher transitions. This highly unusual behavior represents a change from a parabolic to a linear energy dispersion. The density of states derived from our data generally agrees with the existing lowest order tight binding calculation for bilayer graphene. However, in comparing data to theory, a single set of fitting parameters fails to describe the experimental results.

Infrared spectroscopy of Landau levels of graphene

We report infrared studies of the Landau level (LL) transitions in single layer graphene. Our specimens are density tunable and show in situ half-integer quantum Hall plateaus. Infrared transmission is measured in magnetic fields up to B=18 T at selected LL fillings. Resonances between hole LLs and electron LLs, as well as resonances between hole and electron LLs, are resolved. Their transition energies are proportional to sqrt[B], and the deduced band velocity is (-)c approximately equal to 1.1 x 10(6) m/s. The lack of precise scaling between different LL transitions indicates considerable contributions of many-particle effects to the infrared transition energies.